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公开(公告)号：US20230320651A1
公开(公告)日：2023-10-12
申请号：US18118131
申请日：2023-03-07
Applicant: Shoko TSUCHIMINE , Hirofumi MORISE , Kiwamu KUDO , Yoshihiro MISAKA , Masato KOIKE
Inventor： Shoko TSUCHIMINE , Hirofumi MORISE , Kiwamu KUDO , Yoshihiro MISAKA , Masato KOIKE
IPC: A61B5/00
CPC classification number: A61B5/4041 , A61B5/7203 , A61B5/7257
Abstract: A biological signal measurement system includes: a providing unit configured to provide a first visual stimulus including a first object visually changing at a predetermined frequency, and a second visual stimulus including a second object; a detection unit configured to detect a biological signal of the subject; a frequency analysis unit configured to perform a frequency analysis on the detected biological signal corresponding to the first visual stimulus, and derive a signal intensity of each frequency component; a determination unit configured to determine a time interval in which the subject has viewed the first visual stimulus, based on a signal intensity of a frequency component corresponding to the frequency; an extraction unit configured to extract the biological signal corresponding to the determined time interval, and corresponding to the second visual stimulus; and an output unit configured to output the extracted biological signal.
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公开(公告)号：US08982611B2
公开(公告)日：2015-03-17
申请号：US13526961
申请日：2012-06-19
Applicant: Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura , Junichi Akiyama
Inventor： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura , Junichi Akiyama
CPC classification number: G11C11/1673 , G11C11/161 , Y10S977/933 , Y10S977/935
Abstract: A magnetic memory element includes a first magnetic layer, a second magnetic layer, a first intermediate layer, a first magnetic wire, a first input unit, and a first detection unit. The first magnetic layer has magnetization fixed. The second magnetic layer has magnetization which is variable. The first intermediate layer is between the first magnetic layer and the second magnetic layer. The first magnetic wire extends in a first direction perpendicular to a direction connecting from the first magnetic layer to the second magnetic layer and is adjacent to the second magnetic layer. In addition, write-in is performed by propagating a first spin wave through the first magnetic wire and by passing a first current from the first magnetic layer toward the second magnetic layer. Read-out is performed by passing a second current from the first magnetic layer toward the second magnetic layer.
Abstract translation: 磁存储元件包括第一磁性层，第二磁性层，第一中间层，第一磁性线，第一输入单元和第一检测单元。 第一磁性层具有固定的磁化。 第二磁性层具有可变的磁化。 第一中间层位于第一磁性层和第二磁性层之间。 第一磁性线沿垂直于从第一磁性层连接到第二磁性层的方向的第一方向延伸并与第二磁性层相邻。 此外，通过将第一自旋波传播通过第一磁线并通过使第一电流从第一磁性层向第二磁性层传递来执行写入。 通过将第二电流从第一磁性层传递到第二磁性层来进行读出。
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公开(公告)号：US20130235653A1
公开(公告)日：2013-09-12
申请号：US13713482
申请日：2012-12-13
Applicant: Tsuyoshi KONDO , Hirofumi Morise , Shiho Nakamura
Inventor： Tsuyoshi KONDO , Hirofumi Morise , Shiho Nakamura
IPC: G11C11/16
CPC classification number: G11C11/16 , G11C11/161
Abstract: A magnetic memory according to an embodiment includes: a magnetic structure extending in a first direction and having a circular ring-like shape in cross-section in a plane perpendicular to the first direction; a nonmagnetic layer formed on an outer surface of the magnetic structure, the outer surface extending in the first direction; and at least one reference portion formed on part of a surface of the nonmagnetic layer, the surface being on the opposite side from the magnetic structure, the at least one reference portion containing a magnetic material.
Abstract translation: 根据实施例的磁存储器包括：在垂直于第一方向的平面中沿第一方向延伸并具有圆形环形形状的磁性结构， 形成在所述磁性结构的外表面上的非磁性层，所述外表面沿所述第一方向延伸; 以及形成在非磁性层的表面的一部分上的至少一个参考部分，所述表面位于与磁性结构相反的一侧，所述至少一个参考部分包含磁性材料。
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公开(公告)号：US20130077395A1
公开(公告)日：2013-03-28
申请号：US13422030
申请日：2012-03-16
Applicant: Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
Inventor： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
CPC classification number: G11C11/14 , G11C11/161 , G11C11/1675
Abstract: A magnetic memory device comprises a magnetic wire extending in a first direction, a pair of first electrodes operable to pass a current through the magnetic wire in the first direction or in an opposite direction to the first direction, a first insulating layer provided on the magnetic wire in a second direction being substantially perpendicular to the first direction, a plurality of second electrodes provided on the first insulating layer and provided at specified interval in the second direction, and a third electrode electrically connected to the plurality of second electrodes.
Abstract translation: 一种磁存储器件包括沿第一方向延伸的磁线，一对第一电极，可操作以使电流沿第一方向或与第一方向相反的方向通过磁线;第一绝缘层，设置在磁性 在第二方向上的导线基本上垂直于第一方向;多个第二电极，设置在第一绝缘层上，并在第二方向上以规定的间隔设置，第三电极与多个第二电极电连接。
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公开(公告)号：US20120280769A1
公开(公告)日：2012-11-08
申请号：US13487769
申请日：2012-06-04
Applicant: Tsuyoshi KONDO , Hirofumi Morise , Shiho Nakamura
Inventor： Tsuyoshi KONDO , Hirofumi Morise , Shiho Nakamura
IPC: H01P1/218
CPC classification number: H01P1/20345 , H01P1/203 , H03C1/34
Abstract: A spin wave device according to an embodiment includes: an input interconnect transmitting an input impulse signal; a multilayer film including a foundation layer; a first magnetic layer formed on the multilayer film and generating spin waves when receiving the input impulse signal, the spin waves propagating through the first magnetic layer; a plurality of input electrodes arranged in a straight line on the first magnetic layer, being connected to the input interconnect, and transmitting the input impulse signal to the first magnetic layer; and a plurality of sensing electrodes sensing the spin waves, being arranged on the first magnetic layer, and being located at different distances from one another from the straight line having the input electrodes arranged therein, and the following equation is satisfied: d=Vg×t0.
Abstract translation: 根据实施例的自旋波装置包括：输入互连件，其传输输入脉冲信号; 包括基底层的多层膜; 形成在所述多层膜上并在接收所述输入脉冲信号时产生自旋波的第一磁性层，所述自旋波通过所述第一磁性层传播; 多个输入电极，布置在第一磁性层上的直线上，连接到输入互连，并将输入脉冲信号传输到第一磁性层; 以及感测旋转波的多个感测电极，布置在第一磁性层上，并且与其中布置有输入电极的直线彼此不同的距离设置，满足以下等式：d = Vg× t0。
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Patent Agency Ranking
公开(公告)号：US07558103B2
公开(公告)日：2009-07-07
申请号：US11729982
申请日：2007-03-30
Applicant: Shiho Nakamura , Yuichi Motoi , Shigeru Haneda , Hirofumi Morise , Takahiro Hirai
Inventor： Shiho Nakamura , Yuichi Motoi , Shigeru Haneda , Hirofumi Morise , Takahiro Hirai
IPC: G11C11/00
CPC classification number: G11C11/16 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/71 , H01H1/0094 , Y10S977/725 , Y10S977/943
Abstract: A magnetic switching element according to an example of the present invention includes a magnetic element, first and second electrodes which put the magnetic element therebetween, a current control section which is connected to the first and second electrodes, the current control section controlling a magnetization direction of a magnetization free section in such a manner that a current is made to flow between the magnetization free section and the magnetization fixed section, a movable conductive tube having a fixed end and a free end, and a third electrode connected to the fixed end of the conductive tube. A switching operation is performed in such a manner that a spatial position of the conductive tube is caused to change depending on the magnetization direction of the magnetization free section.
Abstract translation: 根据本发明的实施例的磁性开关元件包括磁性元件，将磁性元件放置在其间的第一和第二电极，连接到第一和第二电极的电流控制部分，电流控制部分控制磁化方向 的无磁化部分，使得电流在磁化自由部分和磁化固定部分之间流动，具有固定端和自由端的可移动导电管和连接到固定端的固定端的第三电极 导电管。 以使得导电管的空间位置根据磁化自由部的磁化方向而变化的方式进行切换操作。
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公开(公告)号：US20090052237A1
公开(公告)日：2009-02-26
申请号：US12107127
申请日：2008-04-22
Applicant: Hirofumi Morise , Shiho Nakamura , Satoshi Yanagi , Yuichi Ohsawa , Daisuke Saida
Inventor： Hirofumi Morise , Shiho Nakamura , Satoshi Yanagi , Yuichi Ohsawa , Daisuke Saida
CPC classification number: H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
Abstract: A magnetic memory element includes a laminated construction of a first electrode, a first pinned layer, a first intermediate layer, a memory layer, a second intermediate layer, a second pinned layer and a second electrode, and a third electrode coupled to the first intermediate layer and not directly coupled to the memory layer. The magnetization directions of the first pinned layer, the second pinned layer, and the memory layer are parallel or antiparallel to each other. The magnetization direction of the memory layer takes a first direction when the current is passed with a first polarity so that the current flowing through the first pinned layer exceeds a first threshold. The magnetization direction of the memory layer takes a second direction when the current is passed with a second polarity so that the current flowing through the first pinned layer exceeds a second threshold.
Abstract translation: 磁存储元件包括第一电极，第一被钉扎层，第一中间层，存储层，第二中间层，第二被钉扎层和第二电极的层压结构，以及耦合到第一中间体 层并且不直接耦合到存储器层。 第一被钉扎层，第二钉扎层和存储层的磁化方向彼此平行或反平行。 当电流以第一极性通过时，存储层的磁化方向取第一方向，使得流过第一被钉扎层的电流超过第一阈值。 当电流以第二极性通过时，存储层的磁化方向采取第二方向，使得流过第一被钉扎层的电流超过第二阈值。
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公开(公告)号：US20050219768A1
公开(公告)日：2005-10-06
申请号：US11090074
申请日：2005-03-28
Applicant: Shiho Nakamura , Shigeru Haneda , Hirofumi Morise
Inventor： Shiho Nakamura , Shigeru Haneda , Hirofumi Morise
CPC classification number: G11B5/39
Abstract: A magneto-resistance effect element can obtain a high output and makes it possible to stabilize magnetization in a magnetization free layer therein even if a sense current is caused to flow. The magneto-resistance effect element is provided with a magnetization free layer whose magnetization direction is variable, a magnetization pinned layer whose magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, where when no external magnetic field is present and no current flows, the magnetization direction in the magnetization free layer is anti-parallel to the magnetization direction pinned in the magnetization pinned layer, an easy axis of magnetization in the magnetization free layer is parallel to the magnetization direction pinned in the magnetization pinned layer, and a sense current flows from the magnetization free layer to the magnetization pinned layer.
Abstract translation: 磁阻效应元件可以获得高输出，并且使得即使使感测电流流动，也可以使其在无磁化层中的磁化稳定。 磁阻效应元件具有磁化方向可变的磁化自由层，其磁化方向被钉扎的磁化钉扎层以及设置在磁化自由层和磁化固定层之间的中间层，其中当没有外部磁 磁场存在，没有电流流动，磁化自由层中的磁化方向与磁化被钉扎层中钉扎的磁化方向反平行，磁化自由层的易磁化轴平行于在 磁化固定层，感测电流从磁化自由层流向磁化固定层。
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9.发明申请公开(公告)号：US20200289008A1
公开(公告)日：2020-09-17
申请号：US16809762
申请日：2020-03-05
Applicant: Yoshihiro MISAKA , Hirofumi MORISE , Kiwamu KUDO
Inventor： Yoshihiro MISAKA , Hirofumi MORISE , Kiwamu KUDO
Abstract: A brain response measurement system includes a stimulation timing control unit calculating, based on a delay time from a brain response to first stimulation in a first brain area to a brain response to a second stimulation in the first brain area, and a delay time from a brain response to the second stimulation in the second brain area to a brain response to the first stimulation in the second brain area, start and end times of the first stimulation and start and end times of the second stimulation that cause the brain response to the first stimulation in the first brain area and the brain response to the second stimulation in the first brain area not to overlap and cause the brain response to the second stimulation in the second brain area and the brain response to the first stimulation in the second brain area not to overlap.
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公开(公告)号：US20190200912A1
公开(公告)日：2019-07-04
申请号：US16150546
申请日：2018-10-03
Applicant: Hirofumi MORISE , Kiwamu KUDO , Yoshihiro MISAKA , Eiichi OKUMURA , Tomoya KIMURA , Yasuyuki KAWABUCHI
Inventor： Hirofumi MORISE , Kiwamu KUDO , Yoshihiro MISAKA , Eiichi OKUMURA , Tomoya KIMURA , Yasuyuki KAWABUCHI
Abstract: A biological function measurement and analysis system, a biological function measurement and analysis method, and a recording medium storing program code causing a computer to execute the biological function measurement and analysis method. The biological function measurement and analysis system includes an input acceptance unit configured to accept selection of a biological function to be measured, and a measurement and analysis procedure determining unit configured to access a memory in which measurement and analysis procedure data, indicating a combination of measurement and analysis of reaction of a live subject caused by stimulation on a biological-function-by-biological-function basis, is stored to specify measurement and analysis procedure data corresponding to the selected biological function. The biological function measurement and analysis method includes accepting the selection of biological function to be measured, accessing the memory, and specifying the measurement and analysis procedure data corresponding to the selected biological function.
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