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    Method for making LCD device in which gate insulator of TFT is formed after the pixel electrode but before the video signal line
    3.
    发明授权
    Method for making LCD device in which gate insulator of TFT is formed after the pixel electrode but before the video signal line 失效
    制造在像素电极之后但在视频信号线之前形成TFT的栅极绝缘体的LCD器件的方法

    公开(公告)号：US5610738A

    公开(公告)日：1997-03-11

    申请号：US411207

    申请日：1995-03-27

    申请人： Akira Sasano ,  Kazuo Shirahashi ,  Yuka Matsukawa ,  Hideaki Taniguchi ,  Hideaki Yamamoto ,  Haruo Matsumaru

    发明人： Akira Sasano ,  Kazuo Shirahashi ,  Yuka Matsukawa ,  Hideaki Taniguchi ,  Hideaki Yamamoto ,  Haruo Matsumaru

    IPC分类号： G02F1/1362 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1333

    CPC分类号： G02F1/1368 ,  G02F1/136213 ,  G02F1/13624

    摘要： An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided. In such a device structure, in which the spacing between the ITO and the gate electrode can be compacted while ensuring that there are no short-circuits effected between the ITO layer and gate electrode during the manufacture of the LCD device, the gate electrode and, therefore, also the plate (lower) electrode of the capacitor Cadd are first formed, followed by the formation of the AOF layer over the gate electrode and over the plate electrode of the capacitor, respectively. Subsequently, the ITO pixel electrode is formed on the same plane as that of the first conductive layer, corresponding to the gate electrode and plate electrode of capacitor Cadd, and is followed by the formation of a relatively thicker second insulating layer, for example, a nitride insulating layer, on the first insulating layer, namely, the anodized oxide film, and on the pixel electrode. In accordance with this scheme, furthermore, the first insulating layer is formed by anodizing the metal layer constituting the first conductive layer.

    摘要翻译： 一种有源矩阵液晶显示装置，其具有设置在玻璃基板上的多个薄膜晶体管，每个薄膜晶体管均包括铝栅电极的阳极化氧化膜，其中透明像素电极形成在与玻璃之间的栅极电极相同的平面中 衬底和非晶硅岛，其上设置有源极和漏极。 在这样的器件结构中，可以在确保在LCD器件的制造期间在ITO层和栅电极之间没有短路的情况下，可以使ITO和栅电极之间的间隔被压实， 因此，首先形成电容器Cadd的板（下）电极，然后分别在栅电极和电容器的平板电极之上形成AOF层。 随后，ITO像素电极形成在与电容器Cadd的栅电极和平板电极相对应的与第一导电层相同的平面上，随后形成相对较厚的第二绝缘层，例如， 氮化物绝缘层，在第一绝缘层上，即阳极氧化氧化膜上，和像素电极上。 此外，根据该方案，通过阳极氧化构成第一导电层的金属层来形成第一绝缘层。

    Method of producing material patterns by evaporating material through a perforated mask having a reinforcing bridge
    5.
    发明授权
    Method of producing material patterns by evaporating material through a perforated mask having a reinforcing bridge 失效
    通过具有加强桥的穿孔掩模蒸发材料来生产材料图案的方法

    公开(公告)号：US4273812A

    公开(公告)日：1981-06-16

    申请号：US8587

    申请日：1979-02-01

    申请人： Ken Tsutsui ,  Akira Sasano ,  Toshio Nakano ,  Haruo Matsumaru ,  Eiichi Maruyama

    发明人： Ken Tsutsui ,  Akira Sasano ,  Toshio Nakano ,  Haruo Matsumaru ,  Eiichi Maruyama

    IPC分类号： C23C14/04 ,  H05K3/14 ,  H05K3/10 ,  C23C13/00 ,  C23C13/02

    CPC分类号： H05K3/143 ,  C23C14/042

    摘要： A method of producing material patterns in which at least one substrate is fixed together with a mask to a substrate holder, and an evaporated film of desired substances is formed on the surface of the substrate by means of evaporation sources provided to confront the substrate. The mask is fabricated to have a plurality of reinforcing bridges formed in the desired portions of the mask openings of desired shape formed in the mask. The mask is held spaced from the substrate by a small distance during the evaporation, so that the evaporation may be effected at least through two pattern openings defined at both sides of each bridge. The evaporation is performed by means of evaporation sources which are located such that the line interconnecting one of the edges of each bridge and the evaporation source located at the same side with respect to the substantial bridging direction of the bridge and another line interconnecting the other edge of the bridge and the evaporation source located at the same side as the other edge intersect each other at a point on the surface of the substrate or in the clearance between the substrate surface and the mask. This method makes it possible to produce patterns which could never be produced by the conventional evaporation method.

    摘要翻译： 一种生产材料图案的方法，其中至少一个基板与掩模一起固定到基板保持器上，并且通过设置成面对基板的蒸发源在基板的表面上形成所需物质的蒸发膜。 掩模被制造成具有形成在形成在掩模中的所需形状的掩模开口的所需部分中的多个加强桥。 掩模在蒸发期间与衬底间隔开一小段距离，使得蒸发可以至少通过限定在每个桥的两侧的两个图案开口进行。 通过蒸发源进行蒸发，所述蒸发源被定位成使得相对于桥的基本桥接方向互连每个桥的边缘之一的线和位于同一侧的蒸发源的线，另一条线与另一边相互连接 和位于与另一边缘相同侧的蒸发源在基板的表面上的点处或基板表面与掩模之间的间隙中彼此相交。 这种方法使得可以产生由常规蒸发方法所不能产生的图案。

    Method of manufacturing a thin film transistor substrate
    7.
    发明授权
    Method of manufacturing a thin film transistor substrate 失效
    制造薄膜晶体管基板的方法

    公开(公告)号：US5585290A

    公开(公告)日：1996-12-17

    申请号：US158219

    申请日：1993-11-29

    申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

    发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

    IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84

    CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

    摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.

    摘要翻译： 本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备， 更具体地，涉及能够改善其特性的结构和制造方法。 在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜 由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。 在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。

    Thin film transistor and a liquid crystal display device using same
    10.
    发明授权
    Thin film transistor and a liquid crystal display device using same 失效
    薄膜晶体管和使用其的液晶显示装置

    公开(公告)号：US4990981A

    公开(公告)日：1991-02-05

    申请号：US296811

    申请日：1989-01-13

    申请人： Yasuo Tanaka ,  Haruo Matsumaru ,  Hideaki Yamamoto ,  Toshihisa Tsukada ,  Ken Tsutsui ,  Yoshiyuki Kaneko

    发明人： Yasuo Tanaka ,  Haruo Matsumaru ,  Hideaki Yamamoto ,  Toshihisa Tsukada ,  Ken Tsutsui ,  Yoshiyuki Kaneko

    IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L29/786

    CPC分类号： G02F1/1368 ,  H01L29/78633 ,  H01L29/78669

    摘要： A thin film transistor is disclosed, which comprises a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, and a drain electrode, which are disposed on a predetermined substrate, and which is so constructed that the semiconductor layer doesn't exist in any regions, to which strong electric field parallel to said substrate is applied. Besides this thin film transistor a liquid crystal display device using it is disclosed. The thin film transistor according to the present invention has a small increase in the off level current due to photo-current and it is suitable for driving pixels in the liquid crystal display device.

    摘要翻译： 公开了一种薄膜晶体管，其包括设置在预定衬底上的栅电极，栅极绝缘层，半导体层，源电极和漏电极，并且其构造使得半导体层不是“ 存在于与所述基板平行的强电场的任何区域中。 除此之外，还公开了使用该薄膜晶体管的液晶显示装置。 根据本发明的薄膜晶体管由于光电流而导致的关断电平的增加很小，并且适用于驱动液晶显示装置中的像素。