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    Method of forming capacitor of semiconductor memory device
    1.
    发明申请
    Method of forming capacitor of semiconductor memory device 有权
    形成半导体存储器件电容器的方法

    公开(公告)号：US20100120212A1

    公开(公告)日：2010-05-13

    申请号：US12591072

    申请日：2009-11-06

    申请人： Dong-kwan Yang ,  Seong-ho Kim ,  Won-mo Park ,  Gil-sub Kim

    发明人： Dong-kwan Yang ,  Seong-ho Kim ,  Won-mo Park ,  Gil-sub Kim

    IPC分类号： H01L21/8239 ,  H01L21/02

    CPC分类号： H01L27/10817 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/10855

    摘要： A method of forming a semiconductor memory device includes sequentially forming an etch stop layer and then a mold layer, forming a plurality of line-shaped support structures and a first sacrificial layer filling gaps between the support structures on the mold layer, sequentially forming a plurality of line-shaped first mask patterns, a second sacrificial layer, and then second mask patterns on the support structures and on the first sacrificial layer, removing the second sacrificial layer, the first sacrificial layer, and the mold layer using the first mask patterns, the second mask patterns, and the support structures as masks, removing the first mask patterns and second mask patterns, filling the storage node electrode holes with a conductive material and etching back the conductive material to expose the support structures, and removing the first sacrificial layer and the mold layer to form pillar-type storage node electrodes supported by the support structures.

    摘要翻译： 形成半导体存储器件的方法包括顺序地形成蚀刻停止层，然后形成模具层，形成多个线状支撑结构，以及填充模具层上的支撑结构之间的间隙的第一牺牲层，依次形成多个 线形的第一掩模图案，第二牺牲层，然后在支撑结构上和第一牺牲层上的第二掩模图案，使用第一掩模图案去除第二牺牲层，第一牺牲层和模具层， 第二掩模图案和支撑结构作为掩模，去除第一掩模图案和第二掩模图案，用导电材料填充存储节点电极孔并蚀刻导电材料以暴露支撑结构，以及去除第一牺牲层 和模具层，以形成由支撑结构支撑的柱状存储节点电极。

    Method of forming an isolation structure and method of forming a semiconductor device
    2.
    发明授权
    Method of forming an isolation structure and method of forming a semiconductor device 有权
    形成隔离结构的方法和形成半导体器件的方法

    公开(公告)号：US08697579B2

    公开(公告)日：2014-04-15

    申请号：US13362142

    申请日：2012-01-31

    申请人： Joo-Sung Park ,  Se-Myeong Jang ,  Gil-Sub Kim

    发明人： Joo-Sung Park ,  Se-Myeong Jang ,  Gil-Sub Kim

    IPC分类号： H01L21/311

    CPC分类号： H01L21/76229

    摘要： A method of forming an isolation structure includes forming a trench at an upper portion of a substrate, forming a first oxide layer on an inner wall of the trench, oxidizing a portion of the substrate adjacent to the trench to form a second oxide layer such that the portion of the substrate adjacent to the trench has the first oxide layer thereon, forming a nitride layer on the first oxide layer, and forming an insulation layer pattern on the nitride layer such that the insulation layer pattern fills a remaining portion of the trench.

    摘要翻译： 形成隔离结构的方法包括在衬底的上部形成沟槽，在沟槽的内壁上形成第一氧化物层，氧化邻近沟槽的衬底的一部分以形成第二氧化物层，使得 与沟槽相邻的衬底部分具有第一氧化物层，在第一氧化物层上形成氮化物层，并在氮化物层上形成绝缘层图案，使得绝缘层图案填充沟槽的剩余部分。

    Method of forming capacitor of semiconductor memory device
    3.
    发明授权
    Method of forming capacitor of semiconductor memory device 有权
    形成半导体存储器件电容器的方法

    公开(公告)号：US08043925B2

    公开(公告)日：2011-10-25

    申请号：US12591072

    申请日：2009-11-06

    申请人： Dong-kwan Yang ,  Seong-ho Kim ,  Won-mo Park ,  Gil-sub Kim

    发明人： Dong-kwan Yang ,  Seong-ho Kim ,  Won-mo Park ,  Gil-sub Kim

    IPC分类号： H01L21/20

    CPC分类号： H01L27/10817 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/10855

    摘要： A method of forming a semiconductor memory device includes sequentially forming an etch stop layer and then a mold layer, forming a plurality of line-shaped support structures and a first sacrificial layer filling gaps between the support structures on the mold layer, sequentially forming a plurality of line-shaped first mask patterns, a second sacrificial layer, and then second mask patterns on the support structures and on the first sacrificial layer, removing the second sacrificial layer, the first sacrificial layer, and the mold layer using the first mask patterns, the second mask patterns, and the support structures as masks, removing the first mask patterns and second mask patterns, filling the storage node electrode holes with a conductive material and etching back the conductive material to expose the support structures, and removing the first sacrificial layer and the mold layer to form pillar-type storage node electrodes supported by the support structures.

    摘要翻译： 形成半导体存储器件的方法包括顺序地形成蚀刻停止层，然后形成模具层，形成多个线状支撑结构，以及填充模具层上的支撑结构之间的间隙的第一牺牲层，依次形成多个 线形的第一掩模图案，第二牺牲层，然后在支撑结构上和第一牺牲层上的第二掩模图案，使用第一掩模图案去除第二牺牲层，第一牺牲层和模具层， 第二掩模图案和支撑结构作为掩模，去除第一掩模图案和第二掩模图案，用导电材料填充存储节点电极孔并蚀刻导电材料以暴露支撑结构，以及去除第一牺牲层 和模具层，以形成由支撑结构支撑的柱状存储节点电极。

    Semiconductor memory device
    4.
    发明申请
    Semiconductor memory device 审中-公开
    半导体存储器件

    公开(公告)号：US20100237394A1

    公开(公告)日：2010-09-23

    申请号：US12659735

    申请日：2010-03-19

    申请人： Jai-Kyun Park ,  Hyeong-Sun Hong ,  Jong-Seop Lee ,  Yong-Il Kim ,  Yun-Sung Lee ,  Nam-Jung Kang ,  Jae-Hoon Song ,  Gil-Sub Kim

    发明人： Jai-Kyun Park ,  Hyeong-Sun Hong ,  Jong-Seop Lee ,  Yong-Il Kim ,  Yun-Sung Lee ,  Nam-Jung Kang ,  Jae-Hoon Song ,  Gil-Sub Kim

    IPC分类号： H01L27/108

    CPC分类号： H01L27/0207 ,  H01L27/10855

    摘要： A semiconductor memory device includes unit active regions, word lines extending in a first direction over the unit active region, bit lines extending on the word lines in a second direction substantially perpendicularly to the first direction, first pad contacts in contact with central portions of the unit active regions, the first pad contacts being arranged between the word lines, direct contacts electrically connected between the first pad contacts and the bit lines, second pad contacts in contact with edge portions of the unit active regions, the second pad contacts being arranged between the word lines and between the bit lines, buried contacts electrically connected to the second pad contacts, and capacitors electrically connected to the buried contacts.

    摘要翻译： 半导体存储器件包括单元有源区域，在单元有源区域上沿第一方向延伸的字线，沿着基本垂直于第一方向的第二方向在字线上延伸的位线，与第一方向的中心部分接触的第一焊盘触点 所述第一焊盘触点布置在所述字线之间，直接触点电连接在所述第一焊盘触点和所述位线之间，所述第二焊盘触点与所述单元有源区域的边缘部分接触，所述第二焊盘触点布置在 字线和位线之间，电连接到第二焊盘触点的埋入触点，以及电连接到埋入触点的电容器。

    METHOD OF FORMING AN ISOLATION STRUCTURE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD OF FORMING AN ISOLATION STRUCTURE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE 有权
    形成隔离结构的方法和形成半导体器件的方法

    公开(公告)号：US20120202336A1

    公开(公告)日：2012-08-09

    申请号：US13362142

    申请日：2012-01-31

    申请人： Joo-Sung PARK ,  Se-Myeong Jang ,  Gil-Sub Kim

    发明人： Joo-Sung PARK ,  Se-Myeong Jang ,  Gil-Sub Kim

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76229

    摘要： A method of forming an isolation structure includes forming a trench at an upper portion of a substrate, forming a first oxide layer on an inner wall of the trench, oxidizing a portion of the substrate adjacent to the trench to form a second oxide layer such that the portion of the substrate adjacent to the trench has the first oxide layer thereon, forming a nitride layer on the first oxide layer, and forming an insulation layer pattern on the nitride layer such that the insulation layer pattern fills a remaining portion of the trench.

    摘要翻译： 形成隔离结构的方法包括在衬底的上部形成沟槽，在沟槽的内壁上形成第一氧化物层，氧化邻近沟槽的衬底的一部分以形成第二氧化物层，使得 与沟槽相邻的衬底部分具有第一氧化物层，在第一氧化物层上形成氮化物层，并在氮化物层上形成绝缘层图案，使得绝缘层图案填充沟槽的剩余部分。

    Semiconductor memory device having cylinder-type capacitor lower electrode and associated methods
    7.
    发明授权
    Semiconductor memory device having cylinder-type capacitor lower electrode and associated methods 有权
    具有圆柱型电容器下电极的半导体存储器件及相关方法

    公开(公告)号：US08198664B2

    公开(公告)日：2012-06-12

    申请号：US12588791

    申请日：2009-10-28

    申请人： Gil-sub Kim

    发明人： Gil-sub Kim

    IPC分类号： H01L27/108

    CPC分类号： H01L27/10852 ,  H01L28/91

    摘要： A semiconductor memory device including a plurality of supports extending parallel to each other in a first direction on a semiconductor substrate, and capacitor lower electrode rows including a plurality of capacitor lower electrodes arranged in a line along the first direction between two adjacent supports from among the plurality of supports, each capacitor lower electrode including outside walls, wherein each of the capacitor lower electrodes includes two support contact surfaces on the outside walls of the capacitor lower electrode, the support contact surfaces respectively contacting the two adjacent supports from among the plurality of supports.

    摘要翻译： 一种半导体存储器件，包括在半导体衬底上沿第一方向彼此平行延伸的多个支撑体，以及电容器下电极行，包括沿两个相邻支撑件之间的第一方向排列成一列的多个电容器下电极， 多个支撑件，每个电容器下电极包括外壁，其中每个电容器下电极在电容器下电极的外壁上包括两个支撑接触表面，支撑接触表面分别接触来自多个支撑件中的两个相邻的支撑件 。

    Capacitor
    8.
    发明授权
    Capacitor 有权
    电容器

    公开(公告)号：US08111501B2

    公开(公告)日：2012-02-07

    申请号：US12385938

    申请日：2009-04-24

    申请人： Gil-Sub Kim

    发明人： Gil-Sub Kim

    IPC分类号： H01G4/005

    CPC分类号： H01G4/33 ,  H01G4/228 ,  H01G4/232 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

    摘要： A method of forming a capacitor includes forming a cylindrical lower electrode structure having an internal support structure on a substrate, forming a dielectric layer on the cylindrical lower electrode structure and the support structure, and forming an upper electrode on the dielectric layer.

    摘要翻译： 形成电容器的方法包括在基板上形成具有内部支撑结构的圆柱形下电极结构，在圆柱形下电极结构和支撑结构上形成电介质层，并在电介质层上形成上电极。

    Fuse box guard rings including protrusions and methods of forming same
    9.
    发明授权
    Fuse box guard rings including protrusions and methods of forming same 有权
    保险丝盒保护环包括突起及其形成方法

    公开(公告)号：US08435840B2

    公开(公告)日：2013-05-07

    申请号：US12773444

    申请日：2010-05-04

    申请人： Seong-Ho Kim ,  Gil-Sub Kim ,  Dong-Kwan Yang

    发明人： Seong-Ho Kim ,  Gil-Sub Kim ,  Dong-Kwan Yang

    IPC分类号： H01L21/82 ,  H01L23/52

    CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A structure included in a semiconductor device can include a fuse box guard ring that defines an interior region of the fuse box inside the fuse box guard ring and that defines an exterior region of the fuse box outside the fuse box guard ring. The fuse box guard ring can include protruding support members that protruding from an interior sidewall or from an exterior sidewall of the fuse box guard ring.

    摘要翻译： 包括在半导体器件中的结构可以包括保险丝盒保护环，其限定保险丝盒保护环内部的保险丝盒的内部区域，并且将保险丝盒的外部区域限定在保险丝盒保护环外部。 保险丝盒保护环可以包括从保险丝盒保护环的内侧壁或外侧壁突出的突出支撑构件。

    Semiconductor memory device including a cylinder type storage node and a method of fabricating the same
    10.
    发明授权
    Semiconductor memory device including a cylinder type storage node and a method of fabricating the same 失效
    包括圆柱型存储节点的半导体存储器件及其制造方法

    公开(公告)号：US08058678B2

    公开(公告)日：2011-11-15

    申请号：US12537461

    申请日：2009-08-07

    申请人： Gil-Sub Kim ,  Won-Mo Park ,  Seong-Ho Kim ,  Dong-Kwan Yang

    发明人： Gil-Sub Kim ,  Won-Mo Park ,  Seong-Ho Kim ,  Dong-Kwan Yang

    IPC分类号： H01L27/108

    CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852

    摘要： Provided is a semiconductor memory device including cylinder type storage nodes and a method of fabricating the semiconductor memory device. The semiconductor memory device includes: a semiconductor substrate including switching devices; a recessed insulating layer including storage contact plugs therein, wherein the storage contact plugs are electrically connected to the switching devices and the recessed insulating layer exposes at least some portions of upper surfaces and side surfaces of the storage contact plugs. The semiconductor device further includes cylinder type storage nodes each having a lower electrode. The lower electrode contacting the at least some portions of the exposed upper surfaces and side surfaces of the storage node contact plugs.

    摘要翻译： 提供了一种包括圆筒型存储节点的半导体存储器件和制造半导体存储器件的方法。 半导体存储器件包括：包括开关器件的半导体衬底; 其中包括存储接触插塞的凹陷绝缘层，其中所述存储接触插塞电连接到所述开关装置，并且所述凹陷绝缘层暴露所述存储接触插塞的上表面和侧表面的至少一些部分。 半导体器件还包括各自具有下电极的圆筒型存储节点。 下部电极接触存储节点接触插塞的暴露的上表面和侧表面的至少一些部分。