公开(公告)号：US08759945B2

公开(公告)日：2014-06-24

申请号：US13081949

申请日：2011-04-07

Applicant: Seong-Ho Kim ,  Won-Mo Park ,  Gil-Sub Kim ,  Ho-Ju Song

Inventor： Seong-Ho Kim ,  Won-Mo Park ,  Gil-Sub Kim ,  Ho-Ju Song

IPC: H01L23/52 ,  H01L29/00

CPC classification number: H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A fuse structure, an e-fuse including the fuse structure and a semiconductor device including the e-fuse are disclosed. The fuse structure includes first and second electrodes extending in a first direction, and spaced a predetermined distance apart from each other and having one ends thereof facing each other, an insulation layer formed between the one end of the first electrode and the one end of the second electrode facing each other, and a conductive film overlapping portions of the first and second electrodes on the insulation layer and contacting the first electrode and the one end of the second electrode.

Abstract translation: 公开了一种熔丝结构，包括熔丝结构的电熔丝和包括该电熔丝的半导体器件。 熔丝结构包括第一和第二电极，第一和第二电极沿第一方向延伸，彼此隔开预定的距离并且其一端面对彼此，形成在第一电极的一端和第一电极的一端之间的绝缘层 第二电极彼此面对，并且导电膜在绝缘层上重叠第一和第二电极的部分，并与第一电极和第二电极的一端接触。

公开(公告)号：US08518188B2

公开(公告)日：2013-08-27

申请号：US11883795

申请日：2007-03-23

Applicant: Seong Ho Kim ,  Sang Heon Yoon ,  Tao Hee Lee

Inventor： Seong Ho Kim ,  Sang Heon Yoon ,  Tao Hee Lee

IPC: B08B9/20

CPC classification number: A47L15/0015 ,  A47L15/0005 ,  A47L15/0007 ,  A47L15/4234 ,  A47L2601/04

Abstract: There is provided a method of controlling a dishwasher. The method includes performing a preliminary washing cycle, performing a main washing cycle, and performing a rinsing cycle. Steam is supplied during at least one of the main washing cycle and the rinsing cycle.

Abstract translation: 提供了一种控制洗碗机的方法。 该方法包括执行初步洗涤循环，执行主洗涤循环和进行漂洗循环。 在主洗涤循环和漂洗循环中的至少一个期间供应蒸汽。

公开(公告)号：US20110298086A1

公开(公告)日：2011-12-08

申请号：US13081949

申请日：2011-04-07

Applicant: Seong-Ho Kim ,  Won-Mo Park ,  Gil-Sub Kim ,  Ho-Ju Song

Inventor： Seong-Ho Kim ,  Won-Mo Park ,  Gil-Sub Kim ,  Ho-Ju Song

IPC: H01L23/525

CPC classification number: H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A fuse structure, an e-fuse including the fuse structure and a semiconductor device including the e-fuse are disclosed. The fuse structure includes first and second electrodes extending in a first direction, and spaced a predetermined distance apart from each other and having one ends thereof facing each other, an insulation layer formed between the one end of the first electrode and the one end of the second electrode facing each other, and a conductive film overlapping portions of the first and second electrodes on the insulation layer and contacting the first electrode and the one end of the second electrode.

Abstract translation: 公开了一种熔丝结构，包括熔丝结构的电熔丝和包括该电熔丝的半导体器件。 熔丝结构包括第一和第二电极，第一和第二电极沿第一方向延伸，彼此隔开预定的距离并且其一端面对彼此，形成在第一电极的一端和第一电极的一端之间的绝缘层 第二电极彼此面对，并且导电膜在绝缘层上重叠第一和第二电极的部分，并与第一电极和第二电极的一端接触。

公开(公告)号：US20110278575A1

公开(公告)日：2011-11-17

申请号：US13013235

申请日：2011-01-25

Applicant: Dong-Won Lee ,  Young-Il Kim ,  Seong-Ho Kim

Inventor： Dong-Won Lee ,  Young-Il Kim ,  Seong-Ho Kim

IPC: H01L51/50 ,  H01L33/08

CPC classification number: H01L27/326 ,  H01L27/3246 ,  H01L51/5209 ,  H01L2251/558

Abstract: An organic light-emitting display device preventing edge defects between a pixel define layer and a pixel electrode, and a method of manufacturing the same. The organic light-emitting display device, comprises: a substrate; a pixel electrode disposed on the substrate and comprising a first pattern unit and a second pattern unit which are electrically disconnected; a pixel define unit disposed on the substrate and exposing the pixel electrode; an intermediate layer disposed on the pixel electrode and emitting light; and a counter electrode disposed on the intermediate layer and the pixel define layer.

Abstract translation: 一种防止像素限定层和像素电极之间的边缘缺陷的有机发光显示装置及其制造方法。 有机发光显示装置包括：基板; 设置在所述基板上并且包括电断开的第一图案单元和第二图案单元的像素电极; 设置在所述基板上并使所述像素电极露出的像素限定单元; 设置在像素电极上并发光的中间层; 以及设置在中间层和像素限定层上的对电极。

公开(公告)号：US20110199409A1

公开(公告)日：2011-08-18

申请号：US13028800

申请日：2011-02-16

Applicant: Dong-Won Lee ,  Tae-Yong Noh ,  Sang-Hun Park ,  Young-Mok Son ,  Hyea-Weon Shin ,  Young-Il Kim ,  Seong-Ho Kim

Inventor： Dong-Won Lee ,  Tae-Yong Noh ,  Sang-Hun Park ,  Young-Mok Son ,  Hyea-Weon Shin ,  Young-Il Kim ,  Seong-Ho Kim

IPC: B41J29/38 ,  B41J2/145

CPC classification number: B41J25/003

Abstract: A printing method and a printer for implementing the printing method are disclosed. When a printhead including a first end and a second end sequentially prints a first area and a second area which are adjacent to each other, the method comprises performing printing by means of the printer by relatively moving locations of the printhead and a print object in such a way that a surface printed by the second end in the first area and a surface printed by the second end in the second area face each other. The printhead rotates around a rotational axis comprising at least one point on the printhead, one end of the printhead, a center of the printhead, or both ends of the printhead.

Abstract translation: 公开了一种用于实现打印方法的打印方法和打印机。 当包括第一端和第二端的打印头顺序地打印彼此相邻的第一区域和第二区域时，该方法包括通过相对移动的打印头和打印对象的位置通过打印机进行打印 由第一区域中的第二端印刷的表面和由第二区域中的第二端印刷的表面彼此面对的方式。 打印头围绕包括打印头至少一个点，打印头的一端，打印头的中心或打印头的两端旋转的轴线旋转。

公开(公告)号：US20110198597A1

公开(公告)日：2011-08-18

申请号：US13028547

申请日：2011-02-16

Applicant: Dmitry Antonenkov ,  Tae-Yong Noh ,  Sang-Hun Park ,  Hyea-Weon Shin ,  Young-Mok Son ,  Dong-Won Lee ,  Young-Il Kim ,  Seong-Ho Kim

Inventor： Dmitry Antonenkov ,  Tae-Yong Noh ,  Sang-Hun Park ,  Hyea-Weon Shin ,  Young-Mok Son ,  Dong-Won Lee ,  Young-Il Kim ,  Seong-Ho Kim

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5228 ,  H01L27/3246 ,  H01L51/0005

Abstract: An organic light emitting display device includes at least one thin film transistor (TFT) on a substrate, the at least one TFT including a semiconductor active layer, a gate electrode insulated from the semiconductor active layer, and source and drain electrodes contacting the semiconductor active layer, a plurality of first electrodes electrically connected to the at least one TFT, a plurality of banks between the plurality of first electrodes, a plurality of organic layers on respective first electrodes, a plurality of second electrodes on respective organic layers, the second electrodes being separated from each other, and a connection electrode on the plurality of banks and the plurality of second electrodes, the connection electrode being electrically connected to the plurality of the second electrodes.

Abstract translation: 有机发光显示装置在基板上包括至少一个薄膜晶体管（TFT），所述至少一个TFT包括半导体有源层，与半导体有源层绝缘的栅电极以及与半导体活性层接触的源电极和漏电极 电连接到所述至少一个TFT的多个第一电极，所述多个第一电极之间的多个堤，在相应的第一电极上的多个有机层，各个有机层上的多个第二电极，所述第二电极 彼此分离，并且多个堤上的连接电极和多个第二电极，连接电极电连接到多个第二电极。

公开(公告)号：US07976902B2

公开(公告)日：2011-07-12

申请号：US12375891

申请日：2007-06-20

Applicant: Min-Soo Han ,  Jung-Woo Kim ,  Jae-Kwan Kim ,  Seong-Ho Kim

Inventor： Min-Soo Han ,  Jung-Woo Kim ,  Jae-Kwan Kim ,  Seong-Ho Kim

IPC: B05D3/02

CPC classification number: C23C22/74 ,  C09D5/084 ,  C21D8/1283 ,  C23C22/20

Abstract: There is provided a chromium-free coating composition for forming an insulation film, the composition having excellent corrosion resistance and excellent film adhesion and film strength after stress relief annealing (SRA), including, based on a 100 g phosphate solution having a solid content of 60% by weight, in which monoaluminum phosphate and monozinc phosphate are mixed at a 1:1 ratio: 0.5˜5 g of a solid in which cobalt hydroxide and strontium hydroxide are mixed at a 1:1 ratio: 100˜300 g of an emulsified polyester resin or an emulsified epoxy resin having a solid content of 20% by weight; 3˜10 g of aluminum silicate having a solid content of 20% by weight; and 0.1˜6 g of a titanium chelate.

Abstract translation: 提供了一种用于形成绝缘膜的无铬涂料组合物，该组合物具有优异的耐腐蚀性和优异的薄膜粘合性以及消除应力退火（SRA）后的膜强度，包括基于100g固体含量的磷酸盐溶液 60重量％，其中磷酸二氢铝和磷酸一锌以1:1的比例混合：0.5〜5g氢氧化钴和氢氧化锶以1:1的比例混合的固体：100〜300g的 乳化聚酯树脂或固体含量为20重量％的乳化环氧树脂; 3〜10g固体含量为20重量％的硅酸铝; 和0.1〜6g钛螯合物。

公开(公告)号：US20110049670A1

公开(公告)日：2011-03-03

申请号：US12840375

申请日：2010-07-21

Applicant: Ho-Ju Song ,  Seong-Ho Kim ,  Won-Mo Park ,  Gil-Sub Kim

Inventor： Ho-Ju Song ,  Seong-Ho Kim ,  Won-Mo Park ,  Gil-Sub Kim

IPC: H01L29/86

CPC classification number: H01L23/5256 ,  H01L27/105 ,  H01L27/10852 ,  H01L27/10894 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a fuse having the form of a capacitor. The semiconductor device includes a cathode formed on a semiconductor substrate, an anode formed over the cathode, and at least one filament having a cylindrical-shell shape formed between the cathode and the anode and electrically connecting the cathode and the anode.

Abstract translation: 半导体器件包括具有电容器形式的熔丝。 半导体器件包括形成在半导体衬底上的阴极，阴极上形成的阳极，以及形成在阴极和阳极之间并且电连接阴极和阳极的至少一个具有圆柱壳形状的灯丝。

公开(公告)号：US07871914B2

公开(公告)日：2011-01-18

申请号：US12431488

申请日：2009-04-28

Applicant: Seong-Ho Kim ,  Chang-Sub Lee ,  Jeong-Dong Choe ,  Sung-Min Kim ,  Shin-Ae Lee ,  Dong-Gun Park

Inventor： Seong-Ho Kim ,  Chang-Sub Lee ,  Jeong-Dong Choe ,  Sung-Min Kim ,  Shin-Ae Lee ,  Dong-Gun Park

IPC: H01L21/336

CPC classification number: H01L29/4983 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/665 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66621 ,  H01L29/7833 ,  H01L29/7834

Abstract: A semiconductor device includes a semiconductor substrate having a recess therein. A gate insulator is disposed on the substrate in the recess. The device further includes a gate electrode including a first portion on the gate insulator in the recess and a second reduced-width portion extending from the first portion. A source/drain region is disposed in the substrate adjacent the recess. The recess may have a curved shape, e.g., may have hemispherical or ellipsoid shape. The source/drain region may include a lighter-doped portion adjoining the recess. Relate fabrication methods are also discussed.

Abstract translation: 半导体器件包括其中具有凹部的半导体衬底。 栅极绝缘体设置在凹部中的基板上。 该器件还包括栅电极，其包括位于凹槽中的栅极绝缘体上的第一部分和从第一部分延伸的第二缩小宽度部分。 源极/漏极区域设置在邻近凹部的衬底中。 凹部可以具有弯曲的形状，例如可以具有半球形或椭球形。 源极/漏极区域可以包括邻近凹部的较轻掺杂部分。 还讨论了相关制造方法。

公开(公告)号：US20100187588A1

公开(公告)日：2010-07-29

申请号：US12537461

申请日：2009-08-07

Applicant: Gil-Sub KIM ,  Won Mo PARK ,  Seong Ho KIM ,  Dong Kwan YANG

Inventor： Gil-Sub KIM ,  Won Mo PARK ,  Seong Ho KIM ,  Dong Kwan YANG

IPC: H01L27/108

CPC classification number: H01L28/91 ,  H01L27/10817 ,  H01L27/10852

Abstract: Provided is a semiconductor memory device including cylinder type storage nodes and a method of fabricating the semiconductor memory device. The semiconductor memory device includes: a semiconductor substrate including switching devices; a recessed insulating layer including storage contact plugs therein, wherein the storage contact plugs are electrically connected to the switching devices and the recessed insulating layer exposes at least some portions of upper surfaces and side surfaces of the storage contact plugs. The semiconductor device further includes cylinder type storage nodes each having a lower electrode. The lower electrode contacting the at least some portions of the exposed upper surfaces and side surfaces of the storage node contact plugs.

Abstract translation: 提供了一种包括圆筒型存储节点的半导体存储器件和制造半导体存储器件的方法。 半导体存储器件包括：包括开关器件的半导体衬底; 其中包括存储接触插塞的凹陷绝缘层，其中所述存储接触插塞电连接到所述开关装置，并且所述凹陷绝缘层暴露所述存储接触插塞的上表面和侧表面的至少一些部分。 半导体器件还包括各自具有下电极的圆筒型存储节点。 下部电极接触存储节点接触插塞的暴露的上表面和侧表面的至少一些部分。