摘要:
Typically, a laser emits significant energy after a control signal is generated to disable the power supply. The inherent delay between generation of a control signal for shutting off a laser power supply and actual termination of an output beam pulse in response to the control signal, is compensated in the context that the control signal is generated automatically upon coincidence of measured output beam power with a preset threshold value. Power supplied to a laser is modulated to cause generation of a pulsed laser output beam. The cumulative energy of each output beam pulse is monitored and a feedback signal indicative of measured output beam pulse energy is supplied to the power supply. The feedback signal is compared with a user-selected threshold value, and a control signal is generated for terminating the output beam pulse (by terminating input power to the laser) when the measured output pulse energy reaches the threshold value. By generating the threshold signal to have a value representing a threshold output beam pulse energy that is lower than a desired output beam pulse energy, the threshold signal is generated in a manner which compensates for the inherent delay between generation of the control signal and the actual termination of the output beam pulse in response to the control signal. This prevents delivery of significant output beam energy in excess of a user-selected amount.
摘要:
A pulsed solid state laser system is disclosed which utilizes a plurality of individual laser rods which are sequentially pumped and whose beans are combined into a single interleaved output bean. The individual laser rods are pumped at an average power level which is below that for maximum output power from each rod, thereby obviating the need for refrigeration cooling. A compact optical system is disclosed which permits a constant beam size even at different pump levels and other advantages. A compact cooling system is also disclosed.
摘要:
An electron beam pattern generating system for exposing a pattern on a substrate using a raster scan method. The system stores a rasterized representation of the pattern as a plurality of regular pixel dose exposure levels. These pixel dose exposure levels are evaluated by the system for one or more proximity effects and corrections to the dose exposure level and/or pixel location are calculated. The system includes apparatus for both calculation and storage of intermediate and final results as required. As they are calculated, the corrections are provided to an exposure dose modulator wherein they are applied to forming the pattern. Thus corrections for both long range and short range proximity effects due to both electron scattering and heating as well as for proximity effects due to global thermal expansion can be calculated and provided during run-time and a corrected pattern exposed.
摘要:
This invention is directed to electromagnetic alignment apparatus, which is particularly adapted, among other possible uses, for use in aligning the wafers in a microlithography system, said apparatus comprising in combination a first magnetic circuit having a plurality of elements including a first magnet; a second magnetic circuit having a plurality of elements including a second magnet; the second magnetic circuit being disposed in spaced relationship with respect to the first magnetic circuit; a movable structural component adapted for mounting an object thereon; one element of each magnetic circuit being fixedly attached to the movable structural component; first and second current carrying coil assemblies mounted in the first magnetic circuit; the second coil assembly being disposed at an angle with respect to the first coil assembly; third and fourth current carrying coil assemblies mounted in the second magnetic circuit; the fourth coil assembly being disposed at an angle with respect to the third coil assembly; and control apparatus for controlling the flow and direction of the current through the coil assemblies, respectively.
摘要:
An apparatus automatically for correcting tilt and focus errors of a wafer in a mask projection system for a plurality of subfields on the wafer which vary in position according to a known scheme. The tilt and focus of each subfield on the wafer is individually corrected by three axial actuators operating on the variable X and Y coordinates of the center of each subfield and its tilt and focus errors.
摘要:
The present invention relates generally to methods, apparatus and materials to reduce or minimize the heating of a substrate (and associated distortions of the photomask) caused by electron-beam energy deposited in the substrate during patterning. Heating of the substrate is exacerbated by radiative transfer of infrared energy from the substrate to other nearby components of the e-beam apparatus followed by reflection or re-radiation of a portion of the energy back to the substrate. The present invention provides useful materials and methods for reducing such reflection or re-radiation effects, leading to temperature stability of the substrate, reduced thermal distortion and the possibility of increased patterning accuracy. The infrared absorbing materials of the present invention also possess sufficient electrical conductivity to dissipate scattered electrons residing on the material, and sufficient thermal conductivity to dissipate heat rapidly and not result in local heating or significant temperature rise of the absorber. The semiconducting material silicon carbide (SiC) is satisfactory for the practice of the present invention. Doped SiC having altered electrical conductivity may also be used. It is shown that emission and re-absorption from the uncoated face of the substrate dominates the substrate's temperature rise.
摘要:
The present invention relates generally to methods, apparatuses and materials to reduce or minimize the heating of a substrate (and associated distortions of the photomask) caused by electron-beam energy deposited in the substrate during patterning. The present invention provides useful materials and methods for reducing such reflection or re-radiation effects, leading to temperature stability of the substrate, reduced thermal distortion and the possibility of increased patterning accuracy. The infrared absorbing materials of the present invention also possess sufficient electrical conductivity to dissipate scattered electrons residing on the material, and sufficient thermal conductivity to dissipate heat rapidly and not result in local heating or significant temperature rise of the absorber.
摘要:
An electron beam writing system includes an electron beam patterning machine operable to emit an electron beam to form a pattern on a substrate. A computer control system, coupled to the electron beam patterning machine, has a plurality of pre-computed distortion maps. Each distortion map describes expected distortions of the substrate caused by bulk heating resulting from exposure to the electron beam. The computer control system controls the electron beam patterning machine using the distortion maps in order to adjust for the expected distortions.
摘要:
A surgical laser scanner having optics that scans a pulsed laser beam onto a target tissue is disclosed. The laser scanner has a lens and a scanning mirror or mirrors located upstream of the lens at a distance substantially equal to the focal length of the lens. The laser beam hits the scanning mirror and is reflected onto the lens in a pattern defined by sequential positions of the scanning mirror. The laser beam is projected onto the target tissue by the lens in a direction parallel to the optical axis of the lens. The projected pattern has a constant size regardless of the distance between the laser scanner and the target tissue.
摘要:
A surgical laser scanner having optics that scans a pulsed laser beam onto a target tissue is disclosed. The laser scanner has a lens and a scanning mirror or mirrors located upstream of the lens at a distance substantially equal to the focal length of the lens. The laser beam hits the scanning mirror and is reflected onto the lens in a pattern defined by sequential positions of the scanning mirror. The laser beam is projected onto the target tissue by the lens in a direction parallel to the optical axis of the lens. The projected pattern has a constant size regardless of the distance between the laser scanner and the target tissue.