-
1.发明授权Antireflective hardmask composition and a method of preparing a patterned material using same 有权抗反射硬掩模组合物和使用其制备图案化材料的方法公开(公告)号：US08323871B2
公开(公告)日：2012-12-04
申请号：US12711748
申请日：2010-02-24
申请人： Sean D. Burns , David R. Medeiros , Dirk Pfeiffer
发明人： Sean D. Burns , David R. Medeiros , Dirk Pfeiffer
CPC分类号： H01L21/0276 , G03F7/0752 , G03F7/091 , G03F7/094
摘要： An antireflective hardmask composition layer including a polymer having Si—O and non-silicon inorganic units in its backbone. The polymer includes chromophore and transparent moieties and a crosslinking component. The antireflective hardmask composition layer is employed in a method of forming a patterned material on a substrate.
摘要翻译： 一种抗反射硬掩模组合物层，包括其主链中具有Si-O和非硅无机单元的聚合物。 聚合物包括发色团和透明部分以及交联组分。 抗反射硬掩模组合物层用于在衬底上形成图案化材料的方法。
-
公开(公告)号：US20120126216A1
公开(公告)日：2012-05-24
申请号：US13362862
申请日：2012-01-31
CPC分类号： H01L51/0003 , H01L51/0002 , H01L51/0025 , H01L51/0077 , H01L51/0512 , Y10T428/1471
摘要： The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.
摘要翻译： 本发明提供一种制备熔融加工的有机 - 无机混合材料的方法，包括以下步骤：将固体有机 - 无机混合材料保持在高于熔点但低于有机 - 无机混合材料的分解温度的温度 足以形成均匀熔体的时间段，然后在足以产生熔融加工的有机 - 无机混合材料的条件下将均匀的熔体冷却至环境温度。
-
3.发明授权Self-segregating multilayer imaging stack with built-in antireflective properties 有权具有内置抗反射特性的自分离多层成像叠层公开(公告)号：US08084193B2
公开(公告)日：2011-12-27
申请号：US12172233
申请日：2008-07-12
申请人： Joy Cheng , Dario L Goldfarb , David R Medeiros , Daniel P Sanders , Dirk Pfeifer , Libor Vylicky
发明人： Joy Cheng , Dario L Goldfarb , David R Medeiros , Daniel P Sanders , Dirk Pfeifer , Libor Vylicky
CPC分类号： G03F7/091 , G03F7/0752 , Y10S430/136 , Y10S438/952 , Y10T428/24802
摘要： A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material. The polymeric photoresistive material and the antireflective coating material that make up the self segregating composition are contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. The substrate can comprise one of a ceramic, dielectric, metal, or semiconductor material and in some instances a material such as a BARC material that is not from the self segregating composition. The composition may also contain a radiation-sensitive acid generator and a base quencher. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer. The process may also include optionally coating a top coat material on the coated substrate. Pattern-wise exposing the coated substrate to imaging radiation and contacting the coated substrate with a developer, produces the patterned material layer wherein the optional top coat material and a portion of the photoresist layer are simultaneously removed from the coated substrate, thereby forming a patterned photoresist layer on the substrate. Alternatively, the optional top coat material, a portion of the photoresist layer and a portion of the bottom antireflective layers are simultaneously removed from the coated substrate by the developer, thereby forming a patterned photoresist layer on the substrate.
摘要翻译： 涂覆方法包括使用包含聚合物光致抗蚀剂材料和抗反射涂层材料的自分离聚合物组合物在基材上形成图案化材料层。 构成自分离组合物的聚合物光致抗蚀剂材料和抗反射涂层材料包含在单一溶液中。 当将该溶液沉积在基材上并除去溶剂时，两种材料自分离成两层。 衬底可以包括陶瓷，电介质，金属或半导体材料中的一种，并且在一些情况下可以是不是来自自分离组合物的诸如BARC材料的材料。 组合物还可以含有辐射敏感性酸产生剂和碱猝灭剂。 这产生了具有单轴双层涂层的涂覆基材，该单轴双层涂层在垂直于基板的方向上具有顶部光刻胶涂层和底部抗反射涂层。 该方法还可以包括任选在涂覆的基材上涂覆顶涂层材料。 将涂覆的基底图案地曝光成成像辐射并使涂覆的基底与显影剂接触，产生图案化材料层，其中可任选的外涂层材料和光刻胶层的一部分同时从涂覆的基底上移除，从而形成图案化的光致抗蚀剂 层。 或者，可选的顶涂层材料，光致抗蚀剂层的一部分和底部抗反射层的一部分由显影剂同时从涂覆的基底上移除，从而在基板上形成图案化的光致抗蚀剂层。
-
4.发明授权Method for tuning epitaxial growth by interfacial doping and structure including same 失效通过界面掺杂和包括其的结构来调谐外延生长的方法公开(公告)号：US07790593B2
公开(公告)日：2010-09-07
申请号：US11962796
申请日：2007-12-21
IPC分类号： H01L21/44
CPC分类号： H01L29/0847 , H01L21/2236 , H01L21/2256 , H01L21/26513 , H01L21/823418 , H01L21/823814 , H01L29/66628 , H01L29/7834
摘要： A method that allows for uniform, simultaneous epitaxial growth of a semiconductor material on dissimilarly doped semiconductor surfaces (n-type and p-type) that does not impart substrate thinning via a novel surface preparation scheme, as well as a structure that results from the implementation of this scheme into the process integration flow for integrated circuitry are provided. The method of the present invention can by used for the selective or nonselective epitaxial growth of semiconductor material from the dissimilar surfaces. More specifically, the invention comprises a method for counterdoping of n-FET and/or p-FET regions of silicon circuitry during the halo and/or extension implantation process utilizing a technique by which the surface characteristics of the two regions are made similar with respect to their response to wet or dry surface preparation and which renders the two previously dissimilar surfaces amenable to simultaneous epitaxial growth of raised source/drain structures; but not otherwise affecting the electrical performance of the resulting device.
摘要翻译： 允许通过新颖的表面制备方案不使衬底变薄的不同掺杂的半导体表面（n型和p型）上的半导体材料均匀地同时外延生长的方法，以及由 提供了将该方案实现为集成电路的过程集成流程。 本发明的方法可以用于从不同的表面进行半导体材料的选择性或非选择性外延生长。 更具体地说，本发明包括一种在卤素和/或延伸注入过程期间用于对硅电路的n-FET和/或p-FET区进行反掺杂的方法，利用这样的技术，使两个区域的表面特性相对于 它们对湿表面或干表面制备的反应，并且使得两个先前不同的表面可以容易地升高的源极/漏极结构的同时外延生长; 但不会影响所得设备的电气性能。
-
公开(公告)号：US07709177B2
公开(公告)日：2010-05-04
申请号：US11906390
申请日：2007-10-02
申请人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
发明人： Marie Angelopoulos , Katherina E. Babich , Douglas Charles LaTulipe , Qinghuang Lin , David R. Medeiros , Wayne Martin Moreau , Karen E. Petrillo , John P. Simons
CPC分类号： G03F7/091 , G03F7/0757 , G03F7/094 , G03F7/405 , Y10S430/145
摘要： Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.
-
公开(公告)号：US07648820B2
公开(公告)日：2010-01-19
申请号：US11614799
申请日：2006-12-21
申请人： Katherina Babich , Elbert Huang , Arpan P. Mahorowala , David R. Medeiros , Dirk Pfeiffer , Karen Temple
发明人： Katherina Babich , Elbert Huang , Arpan P. Mahorowala , David R. Medeiros , Dirk Pfeiffer , Karen Temple
CPC分类号： G03F7/091 , G03F7/0045 , G03F7/0757 , H01L21/0274 , H01L21/32139 , Y10S430/106 , Y10S430/115 , Y10S430/143 , Y10S430/151
摘要： Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.
摘要翻译： 提供了用于半导体器件加工的抗反射硬掩模组合物的抗反射硬掩模组合物和技术。 在本发明的一个方面，提供了用于光刻的抗反射硬掩模层。 抗反射硬掩模层包含含有至少一个发色团部分和至少一个透明部分的碳硅烷聚合物主链; 和交联组分。 在本发明的另一方面，提供一种用于处理半导体器件的方法。 该方法包括以下步骤：在衬底上提供材料层; 在材料层上形成抗反射硬掩模层。 抗反射硬掩模层包含含有至少一个发色团部分和至少一个透明部分的碳硅烷聚合物主链; 和交联组分。
-
7.发明申请SELF-SEGREGATING MULTILAYER IMAGING STACK WITH BUILT-IN ANTIREFLECTIVE PROPERTIES 有权自包含多层抗反射特性的多层成像叠层公开(公告)号：US20100009132A1
公开(公告)日：2010-01-14
申请号：US12172233
申请日：2008-07-12
申请人： Joy Cheng , Dario L. Goldfarb , David R. Medeiros , Daniel P. Sanders , Dirk Pfeifer , Libor Vylicky
发明人： Joy Cheng , Dario L. Goldfarb , David R. Medeiros , Daniel P. Sanders , Dirk Pfeifer , Libor Vylicky
CPC分类号： G03F7/091 , G03F7/0752 , Y10S430/136 , Y10S438/952 , Y10T428/24802
摘要： A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material. The polymeric photoresistive material and the antireflective coating material that make up the self segregating composition are contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. The substrate can comprise one of a ceramic, dielectric, metal, or semiconductor material and in some instances a material such as a BARC material that is not from the self segregating composition. The composition may also contain a radiation-sensitive acid generator and a base quencher. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer. The process may also include optionally coating a top coat material on the coated substrate. Pattern-wise exposing the coated substrate to imaging radiation and contacting the coated substrate with a developer, produces the patterned material layer wherein the optional top coat material and a portion of the photoresist layer are simultaneously removed from the coated substrate, thereby forming a patterned photoresist layer on the substrate. Alternatively, the optional top coat material, a portion of the photoresist layer and a portion of the bottom antireflective layers are simultaneously removed from the coated substrate by the developer, thereby forming a patterned photoresist layer on the substrate.
摘要翻译： 涂覆方法包括使用包含聚合物光致抗蚀剂材料和抗反射涂层材料的自分离聚合物组合物在基材上形成图案化材料层。 构成自分离组合物的聚合物光致抗蚀剂材料和抗反射涂层材料包含在单一溶液中。 当将该溶液沉积在基材上并除去溶剂时，两种材料自分离成两层。 衬底可以包括陶瓷，电介质，金属或半导体材料中的一种，并且在一些情况下可以是不是来自自分离组合物的诸如BARC材料的材料。 组合物还可以含有辐射敏感性酸产生剂和碱猝灭剂。 这产生了具有单轴双层涂层的涂覆基材，该单轴双层涂层在垂直于基板的方向上具有顶部光刻胶涂层和底部抗反射涂层。 该方法还可以包括任选在涂覆的基材上涂覆顶涂层材料。 将涂覆的基底图案地曝光成成像辐射并使涂覆的基底与显影剂接触，产生图案化材料层，其中可任选的外涂层材料和光刻胶层的一部分同时从涂覆的基底上移除，从而形成图案化的光致抗蚀剂 层。 或者，可选的顶涂层材料，光致抗蚀剂层的一部分和底部抗反射层的一部分由显影剂同时从涂覆的基底上移除，从而在基板上形成图案化的光致抗蚀剂层。
-
公开(公告)号：US20080292825A1
公开(公告)日：2008-11-27
申请号：US12167817
申请日：2008-07-03
CPC分类号： H01L51/0003 , H01L51/0002 , H01L51/0025 , H01L51/0077 , H01L51/0512 , Y10T428/1471
摘要： The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.
摘要翻译： 本发明提供一种制备熔融加工的有机 - 无机混合材料的方法，包括以下步骤：将固体有机 - 无机混合材料保持在高于熔点但低于有机 - 无机混合材料的分解温度的温度 足以形成均匀熔体的时间段，然后在足以产生熔融加工的有机 - 无机混合材料的条件下将均匀的熔体冷却至环境温度。
-
公开(公告)号：US07456045B2
公开(公告)日：2008-11-25
申请号：US11496542
申请日：2006-08-01
CPC分类号： H01L51/0003 , H01L51/0002 , H01L51/0025 , H01L51/0077 , H01L51/0512 , Y10T428/1471
摘要： The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.
摘要翻译： 本发明提供一种制备熔融加工的有机 - 无机混合材料的方法，包括以下步骤：将固体有机 - 无机混合材料保持在高于熔点但低于有机 - 无机混合材料的分解温度的温度 足以形成均匀熔体的时间段，然后在足以产生熔融加工的有机 - 无机混合材料的条件下将均匀的熔体冷却至环境温度。
-
10.发明申请公开(公告)号：US20080233517A1
公开(公告)日：2008-09-25
申请号：US11924005
申请日：2007-10-25
申请人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard A. DiPietro , David R. Medeiros , Ratnam Sooriyakumaran
发明人： Robert David Allen , Gregory Breyta , Phillip Joe Brock , Richard A. DiPietro , David R. Medeiros , Ratnam Sooriyakumaran
IPC分类号： G03F7/004
CPC分类号： G03F7/0046 , C08F220/24 , C08F222/06 , C08F232/08 , G03F7/0382 , G03F7/0392 , G03F7/0395
摘要： The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.
摘要翻译： 本发明提供了可用于负性抗蚀剂组合物的聚合物。 本发明的聚合物包含（1）具有极性官能团的第一单体; （2）第二单体; 和（3）赋予选自可交联官能团，耐蚀刻性和溶解度调制中的至少一种特性的第三单体。 第一单体在消除极性官能团时提供酸催化的极性开关，而第二单体提供水溶解。 本发明的聚合物可以并入负性抗蚀剂组合物，其还可以包括光酸产生剂，交联剂，碱性化合物，溶剂，溶解促进剂，光碱产生剂，潜碱性化合物，表面活性剂，粘合促进剂和消泡剂。
-
-
-
-
-
-
-
-
-
搜索结果
72 条记录 (耗时 0.028 秒)
