知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

30 条记录 (耗时 0.027 秒)

    Method to increase electromigration resistance of copper using self-assembled organic thiolate monolayers
    2.
    发明授权
    Method to increase electromigration resistance of copper using self-assembled organic thiolate monolayers 失效

    公开(公告)号：US07205663B2

    公开(公告)日：2007-04-17

    申请号：US10997536

    申请日：2004-11-23

    申请人： David H. Gracias

    发明人： David H. Gracias

    IPC分类号： H01L23/532

    CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L21/76828 ,  H01L21/76834 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods and solutions for forming self assembled organic monolayers that are covalently bound to metal interfaces are presented along with a device containing a self assembled organic monolayer. Embodiments of the present invention utilize self assembled thiolate monolayers to prevent the electromigration and surface diffusion of copper atoms while minimizing the resistance of the interconnect lines. Self assembled thiolate monolayers are used to cap the copper interconnect lines and chemically hold the copper atoms at the top of the lines in place, thus preventing surface diffusion. The use of self assembled thiolate monolayers minimizes the resistance of copper interconnect lines because only a single monolayer of approximately 10 Å and 20 Å in thickness is used.

    Method for controlling etch bias of carbon doped oxide films
    4.
    发明授权
    Method for controlling etch bias of carbon doped oxide films 失效
    控制碳掺杂氧化膜蚀刻偏压的方法

    公开(公告)号：US06620741B1

    公开(公告)日：2003-09-16

    申请号：US10166150

    申请日：2002-06-10

    申请人： David H. Gracias ,  Hyun-Mog Park ,  Vijayakumar S. Ramachandrarao

    发明人： David H. Gracias ,  Hyun-Mog Park ,  Vijayakumar S. Ramachandrarao

    IPC分类号： H01L2131

    CPC分类号： H01L21/31116 ,  H01L21/31633 ,  H01L21/76802

    摘要： A method for controlling etch bias of carbon doped oxide films comprising performing the etch in a cyclic two step process i.e., a carbon doped oxide (CDO) removal process, said CDO removal process comprises a first gas to etch a trench in the CDO layer. The CDO removal process is followed by a polymer deposition process. The polymer deposition process comprises introducing a second gas in the reactor to deposit a polymer in the trench of the CDO layer. The first gas comprises a first molecule having a first ratio of carbon atoms to fluorine atoms, and the second gas comprises a second molecule having a second ratio of carbon atoms to fluorine atoms, such that the second ratio of carbon atoms to fluorine atoms is greater than the first ratio of carbon atoms to fluorine atoms. The above process may be repeated to etch the final structure.

    摘要翻译： 一种用于控制掺碳氧化物膜的蚀刻偏压的方法，包括以循环两步法，即掺碳氧化物（CDO）去除工艺进行蚀刻，所述CDO去除工艺包括蚀刻CDO层中的沟槽的第一气体。 CDO去除过程之后是聚合物沉积工艺。 聚合物沉积方法包括在反应器中引入第二气体以将聚合物沉积在CDO层的沟槽中。 第一气体包括具有碳原子与氟原子的第一比例的第一分子，第二气体包括具有碳原子与氟原子的第二比例的第二分子，使得碳原子与氟原子的第二比例更大 比碳原子与氟原子的第一比例。 可以重复上述过程以蚀刻最终结构。

    CURVED AND FLEXIBLE MICROFLUIDICS
    6.
    发明申请
    CURVED AND FLEXIBLE MICROFLUIDICS 有权
    弯曲和柔性微流体

    公开(公告)号：US20130210148A1

    公开(公告)日：2013-08-15

    申请号：US13880321

    申请日：2011-10-25

    申请人： David H. Gracias ,  Mustapha Jamal

    发明人： David H. Gracias ,  Mustapha Jamal

    IPC分类号： B29C59/16 ,  H01Q1/38 ,  B29C59/00

    CPC分类号： B29C59/16 ,  B01L3/502707 ,  B01L2200/10 ,  B01L2200/12 ,  B01L2300/123 ,  B29C59/005 ,  B81C1/00007 ,  C08J3/245 ,  H01Q1/38 ,  Y10T428/24628 ,  Y10T428/24802

    摘要： A method of producing curved, folded or reconfigurable structures includes providing a polymer film, exposing the polymer film to at least one of patterned radiation or patterned chemical contact, and conditioning the polymer film subsequent to the exposing. The polymer film includes a polymer that is active to cross-linking of polymer chains in response to the exposing. The exposing is performed such that at least one exposed region of the polymer film develops a gradient in an amount of cross-linking of polymer chains along a cross-sectional direction of the polymer film, and the conditioning of the polymer film removes uncross-linked polymer chains to provide a curved, folded or reconfigurable structure.

    摘要翻译： 制造弯曲，折叠或可重构结构的方法包括提供聚合物膜，将聚合物膜暴露于图案化辐射或图案化学接触中的至少一种，以及在曝光之后对聚合物膜进行调理。 聚合物膜包括响应于曝光而对聚合物链交联有活性的聚合物。 进行曝光，使得聚合物膜的至少一个曝光区域沿着聚合物膜的横截面方向产生聚合物链的交联量的梯度，并且聚合物膜的调节除去未交联 聚合物链以提供弯曲，折叠或可重构的结构。

    SELF-ASSEMBLY OF LITHOGRAPHICALLY PATTERNED POLYHEDRAL NANOSTRUCTURES AND FORMATION OF CURVING NANOSTRUCTURES
    8.
    发明申请
    SELF-ASSEMBLY OF LITHOGRAPHICALLY PATTERNED POLYHEDRAL NANOSTRUCTURES AND FORMATION OF CURVING NANOSTRUCTURES 审中-公开
    自组织图形聚合纳米结构的自组装和弯曲纳米结构的形成

    公开(公告)号：US20120135237A1

    公开(公告)日：2012-05-31

    申请号：US13266558

    申请日：2010-04-28

    申请人： David H. Gracias ,  Jeong-Hyun Cho

    发明人： David H. Gracias ,  Jeong-Hyun Cho

    IPC分类号： B32B5/16 ,  H01L21/302 ,  G03F7/20 ,  B29C59/02 ,  B82Y40/00 ,  B82Y99/00

    CPC分类号： G03F7/0037 ,  B81C1/00007 ,  B81C2201/0143 ,  Y10T428/2982

    摘要： The self-assembly of polyhedral nanostructures having at least one dimension of about 100 nm to about 900 nm with electron-beam lithographically patterned surfaces is provided. The presently disclosed three-dimensional nanostructures spontaneous assemble from two-dimensional, tethered panels during plasma or wet chemical etching of the underlying silicon substrate. Any desired surface pattern with a width as small as fifteen nanometers can be precisely defined in all three dimensions. The formation of curving, continuous nanostructures using extrinsic stress also is disclosed.

    摘要翻译： 提供了具有约100nm至约900nm的至少一个尺寸的电子束光刻图案表面的多面体纳米结构的自组装。 目前公开的三维纳米结构在等离子体或湿法化学蚀刻下面的硅衬底期间从二维的系留板自发组装。 可以在所有三维中精确地定义任何期望的宽度小至十五纳米的表面图案。 公开了使用外在应力的弯曲连续纳米结构的形成。

    Selectively converted inter-layer dielectric
    9.
    发明授权
    Selectively converted inter-layer dielectric 有权
    选择性转换的层间电介质

    公开(公告)号：US07239019B2

    公开(公告)日：2007-07-03

    申请号：US11170322

    申请日：2005-06-28

    申请人： Jihperng Leu ,  Grant M. Kloster ,  David H. Gracias ,  Lee D. Rockford ,  Peter K. Moon ,  Chris E. Barns

    发明人： Jihperng Leu ,  Grant M. Kloster ,  David H. Gracias ,  Lee D. Rockford ,  Peter K. Moon ,  Chris E. Barns

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/76835 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/312 ,  H01L21/3124 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/7682

    摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

    摘要翻译： 公开了一种层间电介质结构及其制造方法。 形成初始包含多孔基质和致孔剂的复合介电层。 在其它处理处理之后，致孔剂从多孔基体的至少一部分分解和除去，留下由多孔基质定义的空隙，其中先前由致孔剂占据的区域。 所得结构由于孔隙率和包含多孔基质和致孔剂的材料而具有期望的低k值。 复合介电层可以与具有不同孔隙率，尺寸和材料性质的其它电介质层一起使用，以提供不同的机械和电气性能轮廓。