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    Method to increase electromigration resistance of copper using self-assembled organic thiolate monolayers
    5.
    发明授权
    Method to increase electromigration resistance of copper using self-assembled organic thiolate monolayers 失效

    公开(公告)号：US07205663B2

    公开(公告)日：2007-04-17

    申请号：US10997536

    申请日：2004-11-23

    申请人： David H. Gracias

    发明人： David H. Gracias

    IPC分类号： H01L23/532

    CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L21/76828 ,  H01L21/76834 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods and solutions for forming self assembled organic monolayers that are covalently bound to metal interfaces are presented along with a device containing a self assembled organic monolayer. Embodiments of the present invention utilize self assembled thiolate monolayers to prevent the electromigration and surface diffusion of copper atoms while minimizing the resistance of the interconnect lines. Self assembled thiolate monolayers are used to cap the copper interconnect lines and chemically hold the copper atoms at the top of the lines in place, thus preventing surface diffusion. The use of self assembled thiolate monolayers minimizes the resistance of copper interconnect lines because only a single monolayer of approximately 10 Å and 20 Å in thickness is used.

    Method for controlling etch bias of carbon doped oxide films
    7.
    发明授权
    Method for controlling etch bias of carbon doped oxide films 失效
    控制碳掺杂氧化膜蚀刻偏压的方法

    公开(公告)号：US06620741B1

    公开(公告)日：2003-09-16

    申请号：US10166150

    申请日：2002-06-10

    申请人： David H. Gracias ,  Hyun-Mog Park ,  Vijayakumar S. Ramachandrarao

    发明人： David H. Gracias ,  Hyun-Mog Park ,  Vijayakumar S. Ramachandrarao

    IPC分类号： H01L2131

    CPC分类号： H01L21/31116 ,  H01L21/31633 ,  H01L21/76802

    摘要： A method for controlling etch bias of carbon doped oxide films comprising performing the etch in a cyclic two step process i.e., a carbon doped oxide (CDO) removal process, said CDO removal process comprises a first gas to etch a trench in the CDO layer. The CDO removal process is followed by a polymer deposition process. The polymer deposition process comprises introducing a second gas in the reactor to deposit a polymer in the trench of the CDO layer. The first gas comprises a first molecule having a first ratio of carbon atoms to fluorine atoms, and the second gas comprises a second molecule having a second ratio of carbon atoms to fluorine atoms, such that the second ratio of carbon atoms to fluorine atoms is greater than the first ratio of carbon atoms to fluorine atoms. The above process may be repeated to etch the final structure.

    摘要翻译： 一种用于控制掺碳氧化物膜的蚀刻偏压的方法，包括以循环两步法，即掺碳氧化物（CDO）去除工艺进行蚀刻，所述CDO去除工艺包括蚀刻CDO层中的沟槽的第一气体。 CDO去除过程之后是聚合物沉积工艺。 聚合物沉积方法包括在反应器中引入第二气体以将聚合物沉积在CDO层的沟槽中。 第一气体包括具有碳原子与氟原子的第一比例的第一分子，第二气体包括具有碳原子与氟原子的第二比例的第二分子，使得碳原子与氟原子的第二比例更大 比碳原子与氟原子的第一比例。 可以重复上述过程以蚀刻最终结构。

    Self-folding sub-centimeter structures
    8.
    发明授权
    Self-folding sub-centimeter structures 有权

    公开(公告)号：US11535510B2

    公开(公告)日：2022-12-27

    申请号：US13643944

    申请日：2011-04-27

    申请人： David H. Gracias ,  Anum Azam

    发明人： David H. Gracias ,  Anum Azam

    IPC分类号： B32B1/02 ,  B81C1/00

    摘要： A sub-centimeter structure includes a first structural component, a second structural component arranged proximate the first structural component, and a joint connecting the first and second structural components. The joint includes a material that has a first phase that is substantially rigid to hold the first and second structural components in a substantially rigid configuration while the material is in the first phase. The material of the joint has a second phase such that the joint is at least partially fluid to allow the first and second structural components to move relative to each other while the material is in the second phase. The joint interacts with the first and second structural components while the material is in the second phase to cause the first and second structural components to move relative to each other. And, the first and second structural components include a polymer.

    Method to reduce the copper line roughness for increased electrical conductivity of narrow interconnects (<100nm)
    10.
    发明授权
    Method to reduce the copper line roughness for increased electrical conductivity of narrow interconnects (<100nm) 有权
    降低铜线粗糙度的方法，以增加窄互连的导电性（<100nm）

    公开(公告)号：US07268075B2

    公开(公告)日：2007-09-11

    申请号：US10439975

    申请日：2003-05-16

    申请人： David H. Gracias ,  Chih-I Wu

    发明人： David H. Gracias ,  Chih-I Wu

    IPC分类号： H01L21/445

    CPC分类号： H01L21/76843 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089

    摘要： Embodiments of the present invention provide methods to reduce the copper line roughness for increased electrical conductivity in narrow interconnects having a width of less than 100 nm. These methods reduce the copper line roughness by first smoothing the surface on which the copper lines are formed by performing a short electrochemical etch of the surface. The electrical conductivity of the interconnects is increased by reducing the copper line roughness that in turn reduces the resistivity of the copper lines.

    摘要翻译： 本发明的实施例提供了减小铜线粗糙度以减小宽度小于100nm的窄互连中增加导电性的方法。 这些方法通过对表面进行短暂的电化学蚀刻，首先使形成铜线的表面平滑化，从而降低铜线粗糙度。 通过减少铜线粗糙度来增加互连的导电性，这进而降低了铜线的电阻率。