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公开(公告)号：US09529714B2
公开(公告)日：2016-12-27
申请号：US14559509
申请日：2014-12-03
Applicant: Yang-Kon Kim , Bo-Mi Lee , Won-Joon Choi , Guk-Cheon Kim , Daisuke Watanabe , Makoto Nagamine , Young-Min Eeh , Koji Ueda , Toshihiko Nagase , Kazuya Sawada
Inventor： Yang-Kon Kim , Bo-Mi Lee , Won-Joon Choi , Guk-Cheon Kim , Daisuke Watanabe , Makoto Nagamine , Young-Min Eeh , Koji Ueda , Toshihiko Nagase , Kazuya Sawada
CPC classification number: G06F12/0802 , G11C11/161 , G11C11/1675 , H01L43/08
Abstract: An electronic device includes a semiconductor memory, and the semiconductor memory includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a ferromagnetic material with molybdenum (Mo) added thereto.
Abstract translation: 电子设备包括半导体存储器，并且半导体存储器包括具有可变磁化方向的第一磁性层; 具有钉扎磁化方向的第二磁性层; 以及插入在所述第一磁性层和所述第二磁性层之间的隧道势垒层，其中所述第二磁性层包括添加有钼（Mo）的铁磁材料。
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2.发明授权公开(公告)号：US09494098B2
公开(公告)日：2016-11-15
申请号：US14235271
申请日：2012-07-26
Applicant: Kenichiroh Ogata , Daisuke Watanabe , Takashi Okamoto
Inventor： Kenichiroh Ogata , Daisuke Watanabe , Takashi Okamoto
IPC: F02D35/02 , F02D41/00 , F02D41/14 , G01H17/00 , F02D41/30 , B60W10/04 , F02D41/40 , F02P5/04 , F02D13/02 , G01M15/12 , F02D41/28
CPC classification number: F02D41/1493 , B60W10/04 , F02D13/0242 , F02D35/027 , F02D41/0007 , F02D41/3017 , F02D41/40 , F02D2041/001 , F02D2041/1432 , F02D2041/288 , F02D2200/025 , F02P5/04 , G01H17/00 , G01M15/12 , Y02T10/128 , Y02T10/144 , Y02T10/18 , Y02T10/44
Abstract: Although a method for changing a combustion method taking place in an internal combustion engine depending on running condition is proposed, it can be considered that conditions under which a combustion noise occurs naturally differ with different methods. A detection method of prior art is not compatible with different combustion methods and the accuracy of combustion noise detection was low. Accurate combustion noise detection is enabled by identifying a combustion mode taking place in the internal combustion engine, selecting a sensed frequency or frequency band of a combustion noise sensor that detects a combustion noise in a combustion chamber of the internal combustion engine according to the combustion mode, and detecting a combustion noise.
Abstract translation: 虽然提出了根据运行条件改变在内燃机中发生的燃烧方法的方法，但是可以认为燃烧噪声发生的条件自然地因不同的方法而不同。 现有技术的检测方法与不同的燃烧方法不兼容，燃烧噪声检测的精度低。 通过识别在内燃机中发生的燃烧模式来实现准确的燃烧噪声检测，根据燃烧模式选择检测内燃机的燃烧室中的燃烧噪声的燃烧噪声传感器的感测频率或频带 ，并且检测燃烧噪声。
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公开(公告)号：US09461240B2
公开(公告)日：2016-10-04
申请号：US14814158
申请日：2015-07-30
Applicant: Kazuya Sawada , Toshihiko Nagase , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Makoto Nagamine
Inventor： Kazuya Sawada , Toshihiko Nagase , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Makoto Nagamine
CPC classification number: H01L43/08 , H01L27/228 , H01L43/10
Abstract: According to one embodiment, a magnetoresistive memory device includes a first magnetic layer, a second magnetic layer, a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and a third magnetic layer provided on a side of the first or second magnetic layer opposite to the nonmagnetic layer. The third magnetic layer has a multilayer film having an artificial lattice structure, and the third magnetic layer is partly microcrystalline or amorphous.
Abstract translation: 根据一个实施例，磁阻存储器件包括第一磁性层，第二磁性层，设置在第一磁性层和第二磁性层之间的非磁性层，以及设置在第一或第二磁性层的一侧的第三磁性层 层与非磁性层相对。 第三磁性层具有具有人造晶格结构的多层膜，第三磁性层是部分微晶或无定形的。
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公开(公告)号：US20160163968A1
公开(公告)日：2016-06-09
申请号：US15041722
申请日：2016-02-11
Applicant: Koji UEDA , Toshihiko NAGASE , Kazuya SAWADA , Youngmin EEH , Daisuke WATANABE , Hiroaki YODA
Inventor： Koji UEDA , Toshihiko NAGASE , Kazuya SAWADA , Youngmin EEH , Daisuke WATANABE , Hiroaki YODA
CPC classification number: H01L43/10 , H01L27/228 , H01L43/02 , H01L43/08
Abstract: According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.
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公开(公告)号：US09293695B2
公开(公告)日：2016-03-22
申请号：US14160166
申请日：2014-01-21
Applicant: Koji Ueda , Toshihiko Nagase , Kazuya Sawada , Youngmin Eeh , Daisuke Watanabe , Hiroaki Yoda
Inventor： Koji Ueda , Toshihiko Nagase , Kazuya Sawada , Youngmin Eeh , Daisuke Watanabe , Hiroaki Yoda
CPC classification number: H01L43/10 , H01L27/228 , H01L43/02 , H01L43/08
Abstract: According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.
Abstract translation: 根据一个实施例，磁阻元件包括第一磁性层，第二磁性层，第一非磁性层，第二非磁性层和第三磁性层。 第一磁性层具有可变的磁化方向。 第二磁性层具有不变的磁化方向，并且包括非磁性材料膜和磁性材料膜。 第一非磁性层布置在第一磁性层和第二磁性层之间。 第二非磁性层布置在第二磁性层的表面上。 第三磁性层布置在第二非磁性层的表面上。 第二非磁性层与包含在第二磁性层中的非磁性材料膜接触。
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Patent Agency Ranking
公开(公告)号：US09184374B2
公开(公告)日：2015-11-10
申请号：US13963762
申请日：2013-08-09
Applicant: Kazuya Sawada , Toshihiko Nagase , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Masahiko Nakayama , Tadashi Kai , Hiroaki Yoda
Inventor： Kazuya Sawada , Toshihiko Nagase , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Masahiko Nakayama , Tadashi Kai , Hiroaki Yoda
Abstract: According to one embodiment, a magnetoresistive element includes first, second and third magnetic layers, and first and second nonmagnetic layers. The third magnetic layer has stack layers including a first stack layer close to the second magnetic layer, and a second stack layer far from the second magnetic layer. Each of the first and second stack layers includes a first layer made of a ferromagnetic material and a second layer made of a nonmagnetic material, and a first ratio of a film thickness of the first layer to that of the second layer in the first stack layer is higher than a second ratio of a film thickness of the first layer to that of the second layer in the second stack layer.
Abstract translation: 根据一个实施例，磁阻元件包括第一，第二和第三磁性层以及第一和第二非磁性层。 第三磁性层具有包括靠近第二磁性层的第一堆叠层和远离第二磁性层的第二堆叠层的堆叠层。 第一和第二堆叠层中的每一个包括由铁磁材料制成的第一层和由非磁性材料制成的第二层，并且第一层的第一层的膜厚度与第二层的膜厚度的第一比率 高于第二层的第一层的膜厚度与第二层的膜厚度的第二比率。
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公开(公告)号：US20150069542A1
公开(公告)日：2015-03-12
申请号：US14157356
申请日：2014-01-16
Applicant: Makoto NAGAMINE , Youngmin EEH , Koji UEDA , Daisuke WATANABE , Kazuya SAWADA , Toshihiko NAGASE
Inventor： Makoto NAGAMINE , Youngmin EEH , Koji UEDA , Daisuke WATANABE , Kazuya SAWADA , Toshihiko NAGASE
CPC classification number: H01L43/08 , G11B5/3909 , H01L43/10 , H01L43/12
Abstract: According to one embodiment, a method of manufacturing a magneto-resistive element, includes forming a first ferromagnetic layer on a substrate, forming a tunnel barrier layer on the first ferromagnetic layer, forming a second ferromagnetic layer containing B on the tunnel barrier layer, exposing a laminate of the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer under a pressurized atmosphere, and annealing the laminate while being exposed to the pressurized atmosphere, thereby promoting the orientation of the second magnetic layer.
Abstract translation: 根据一个实施例，制造磁阻元件的方法包括在衬底上形成第一铁磁层，在第一铁磁层上形成隧道势垒层，在隧道势垒层上形成含有B的第二铁磁层， 在加压气氛下的第一铁磁层，隧道势垒层和第二铁磁层的层叠体，并且在暴露于加压气氛的同时退火层叠体，从而促进第二磁性层的取向。
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公开(公告)号：US20140284742A1
公开(公告)日：2014-09-25
申请号：US13963762
申请日：2013-08-09
Applicant: Kazuya SAWADA , Toshihiko NAGASE , Youngmin EEH , Koji UEDA , Daisuke WATANABE , Masahiko NAKAYAMA , Tadashi KAI , Hiroaki YODA
Inventor： Kazuya SAWADA , Toshihiko NAGASE , Youngmin EEH , Koji UEDA , Daisuke WATANABE , Masahiko NAKAYAMA , Tadashi KAI , Hiroaki YODA
Abstract: According to one embodiment, a magnetoresistive element includes first, second and third magnetic layers, and first and second nonmagnetic layers. The third magnetic layer has stack layers including a first stack layer close to the second magnetic layer, and a second stack layer far from the second magnetic layer. Each of the first and second stack layers includes a first layer made of a ferromagnetic material and a second layer made of a nonmagnetic material, and a first ratio of a film thickness of the first layer to that of the second layer in the first stack layer is higher than a second ratio of a film thickness of the first layer to that of the second layer in the second stack layer.
Abstract translation: 根据一个实施例，磁阻元件包括第一，第二和第三磁性层以及第一和第二非磁性层。 第三磁性层具有包括靠近第二磁性层的第一堆叠层和远离第二磁性层的第二堆叠层的堆叠层。 第一和第二堆叠层中的每一个包括由铁磁材料制成的第一层和由非磁性材料制成的第二层，并且第一层的第一层的膜厚度与第二层的膜厚度的第一比率 高于第二层的第一层的膜厚度与第二层的膜厚度的第二比率。
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公开(公告)号：US20140284534A1
公开(公告)日：2014-09-25
申请号：US14024114
申请日：2013-09-11
Applicant: Toshihiko NAGASE , Tadashi KAI , Youngmin EEH , Koji UEDA , Daisuke WATANABE , Kazuya SAWADA , Hiroaki YODA
Inventor： Toshihiko NAGASE , Tadashi KAI , Youngmin EEH , Koji UEDA , Daisuke WATANABE , Kazuya SAWADA , Hiroaki YODA
Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a first magnetic layer having a variable magnetization direction. A first nonmagnetic layer is provided on the first magnetic layer. A second magnetic layer having a fixed magnetization direction is provided on the first nonmagnetic layer. The first magnetic layer, the first nonmagnetic layer and the second magnetic layer are preferredly oriented in a cubical crystal (111) plane.
Abstract translation: 根据一个实施例，公开了一种磁阻元件。 磁阻元件包括具有可变磁化方向的第一磁性层。 第一非磁性层设置在第一磁性层上。 具有固定磁化方向的第二磁性层设置在第一非磁性层上。 第一磁性层，第一非磁性层和第二磁性层优选地取向为立方晶体（111）平面。
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10.发明授权公开(公告)号：US08792044B2
公开(公告)日：2014-07-29
申请号：US13503826
申请日：2010-10-26
Applicant: Toshiyuki Imai , Tougo Teramoto , Yasushi Iijima , Shigeru Hosoe , Akira Sato , Yuiti Fujii , Daisuke Watanabe
Inventor： Toshiyuki Imai , Tougo Teramoto , Yasushi Iijima , Shigeru Hosoe , Akira Sato , Yuiti Fujii , Daisuke Watanabe
IPC: H04N5/225
CPC classification number: G02B13/001 , G02B13/0085 , H04N5/2254 , H04N5/2257
Abstract: Disclosed is an image pickup device, by which cut resistance at the time of cutting a wafer lens is reduced, high production efficiency is maintained, and excellent optical characteristics are obtained. The image pickup device has a first lens block, a second lens block, a spacer, and a sensor unit. The side surface section of the first lens block, the side surface section of the second lens block, and the side surface section of the spacer are formed on the same plane. A lens cover that covers the first and the second lens blocks is provided in a step formed by respective side surface sections of the first lens block, the second lens block and the spacer, and the side surface section of the sensor unit.
Abstract translation: 公开了一种图像拾取装置，通过该方式，切割晶片透镜时的切割电阻降低，生产效率高，并且获得了优异的光学特性。 图像拾取装置具有第一透镜块，第二透镜块，间隔件和传感器单元。 第一透镜块的侧表面部分，第二透镜块的侧表面部分和间隔件的侧表面部分形成在同一平面上。 覆盖第一透镜块和第二透镜块的透镜盖设置在由第一透镜块，第二透镜块和间隔件的相应侧表面部分以及传感器单元的侧表面部分形成的台阶中。
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