公开(公告)号：US09296088B2

公开(公告)日：2016-03-29

申请号：US13825111

申请日：2010-12-16

申请人： Leonard John Borucki ,  Yasa Adi Sampurno ,  Ara Philipossian

发明人： Leonard John Borucki ,  Yasa Adi Sampurno ,  Ara Philipossian

IPC分类号： B24B57/04 ,  B24B57/02 ,  B24B37/10 ,  B24B37/04

CPC分类号： B24B57/02 ,  B24B37/04 ,  B24B37/10

摘要： In a certain embodiment, the invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising an injector the leading edge of which possess bays, depressions or notches that capture spent slurry and hold it long enough for it to transfer heat from the polishing reaction to the pad or through the injector to the new slurry before the said spent slurry is thrown from the polishing pad. The effect is to considerably improve the removal rate, reduce slurry consumption and reduce operating time.

摘要翻译： 在某一实施例中，本发明包括一种用于在半导体晶片的化学机械抛光中在晶片和衬垫之间注入浆料的装置，该装置包括一个注射器，其前端具有捕获废浆料并保持足够长的孔，凹陷或凹口， 它在从抛光垫抛出所述废浆料之前将热量从抛光反应转移到衬垫或通过喷射器传递到新的浆料。 其效果是大大提高了去除率，降低了浆料消耗，缩短了操作时间。

公开(公告)号：US20100112911A1

公开(公告)日：2010-05-06

申请号：US12262579

申请日：2008-10-31

申请人： Leonard Borucki ,  Ara Philipossian ,  Yasa Sampurno ,  Sian Theng

发明人： Leonard Borucki ,  Ara Philipossian ,  Yasa Sampurno ,  Sian Theng

IPC分类号： B24B57/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： The present invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising a solid crescent shaped injector the concave trailing edge of which is fitted to the size and shape of the leading edge of the polishing head with a gap of up to 1 inch, the bottom surface of which faces the pad and rests on it with a light load, and through which CMP slurry or components thereof are introduced through one or more openings in the top of the injector and travel through a channel or reservoir the length of the device to the bottom where it or they exit multiple openings in the bottom of the injector, are spread into a thin film, and are introduced between the surface of the polishing pad and the wafer along the leading edge of the wafer in quantities such that all or most of the slurry is introduced between the wafer and the polishing pad and a method of use therefor.

摘要翻译： 本发明包括一种用于在半导体晶片的化学机械抛光中在晶片和衬垫之间注入浆料的设备，其包括固体月牙形喷射器，其凹后缘与抛光头的前缘的尺寸和形状相配合， 高达1英寸的间隙，其底表面面向垫并以轻负载放置在其上，并且通过其中CMP浆料或其组分通过喷射器顶部中的一个或多个开口引入并穿过一个 通道或储存器，其中它或它们离开喷射器底部的多个开口的底部的长度被扩散成薄膜，并且沿着前述边缘的引导边缘被引入到抛光垫的表面和晶片之间 晶片的量使得所有或大部分浆料被引入晶片和抛光垫之间，并且其使用方法。

公开(公告)号：US20100099333A1

公开(公告)日：2010-04-22

申请号：US12254291

申请日：2008-10-20

申请人： Fransisca Maria Astrid Sudargho ,  Ara Philipossian ,  Leonard Borucki ,  Masanori Furukawa ,  Koichiro Ichikawa

发明人： Fransisca Maria Astrid Sudargho ,  Ara Philipossian ,  Leonard Borucki ,  Masanori Furukawa ,  Koichiro Ichikawa

IPC分类号： B24B49/00 ,  B24B7/20 ,  B24B1/00

CPC分类号： B24B37/042 ,  B24B49/16

摘要： A method for (a) determining the shear force between a wafer head and a polishing pad in a polishing tool using a CMP polishing tool with a plate above the wafer head which hangs or rests on the plate. The plate is connected to the CMP polishing tool by (b) low friction motion means (c). A load cell sensor is fixed to the framework of the polishing tool or another immovable structure. (d) The load cell determines the force from the leading edge of the plate when the wafer head is in contact with the polishing pad. (e) Signals from the load cell sensor reporting the shear force. A CMP polishing tool which includes elements corresponding to each of points (a)-(e) in the above method.

摘要翻译： 一种用于（a）使用CMP抛光工具在抛光工具中确定晶片头和抛光垫之间的剪切力的方法，该抛光工具具有悬挂或搁置在板上的晶片头上方的板。 通过（b）低摩擦力运动装置（c）将板连接到CMP抛光工具。 称重传感器固定在抛光工具的框架或其他不可移动的结构上。 （d）当晶片头与抛光垫接触时，称重传感器确定来自板的前缘的力。 （e）报告剪切力的称重传感器传感器的信号。 CMP抛光工具，其包括与上述方法中的点（a） - （e）中的每一个相对应的元件。

公开(公告)号：US20080200032A1

公开(公告)日：2008-08-21

申请号：US12033381

申请日：2008-02-19

申请人： Toranosuke ASHIZAWA ,  Masaya NISHIYAMA ,  Ara PHILIPOSSIAN ,  Yun ZHUANG ,  Yasa Adi SAMPURNO ,  Fransisca SUDARGHO

发明人： Toranosuke ASHIZAWA ,  Masaya NISHIYAMA ,  Ara PHILIPOSSIAN ,  Yun ZHUANG ,  Yasa Adi SAMPURNO ,  Fransisca SUDARGHO

IPC分类号： H01L21/302

CPC分类号： H01L21/31053 ,  B24B37/013 ,  B24B37/042 ,  B24B49/16 ,  H01L22/26

摘要： The present invention relates to a method of polishing a semiconductor substrate, comprising pressing a semiconductor substrate having a film to be polished that is held by a carrier onto a polishing cloth fixed on a revolving polishing table and supplying a polishing slurry to the space between the polishing cloth and the semiconductor substrate, wherein the end point of polishing is determined according to the change in the friction coefficient while the friction coefficient between the semiconductor substrate and the polishing cloth is measured. According to the present invention it is possible to measure friction coefficient accurately in polishing a semiconductor substrate and use the change thereof to determine the end point of polishing.

摘要翻译： 本发明涉及一种抛光半导体衬底的方法，包括将具有由载体保持的待抛光膜的半导体衬底压在固定在旋转抛光台上的抛光布上，并将抛光浆料供应到 抛光布和半导体基板，其中在测量半导体基板和抛光布之间的摩擦系数的同时，根据摩擦系数的变化来确定抛光的终点。 根据本发明，可以在研磨半导体衬底时精确地测量摩擦系数，并使用其变化来确定抛光的终点。

公开(公告)号：US20050164613A1

公开(公告)日：2005-07-28

申请号：US10979212

申请日：2004-11-03

申请人： Yoshiyuki Seike ,  Keiji Miyachi ,  Masahiko Amari ,  Ara Philipossian ,  Toshiro Doi

发明人： Yoshiyuki Seike ,  Keiji Miyachi ,  Masahiko Amari ,  Ara Philipossian ,  Toshiro Doi

IPC分类号： B24B53/007 ,  B24B53/017 ,  H01L21/304 ,  B24B1/00

CPC分类号： B24B53/017

摘要： Dressing is performed by spraying a cleaning liquid onto a polishing pad and after that abrasive slurry injected from a nozzle is supplied to the polishing pad. Provided is a method of conditioning a polishing pad for semiconductor wafer which is suitable for keeping the polishing performance of a polishing pad, provided with a polishing device for semiconductor wafer, in a stable condition for a long time.

摘要翻译： 通过将清洁液喷射到抛光垫上，之后将从喷嘴注入的研磨浆料供应到抛光垫来进行敷料。 本发明提供一种调节用于半导体晶片的抛光垫的方法，该方法适用于将设置有半导体晶片抛光装置的抛光垫的抛光性能长时间保持在稳定状态。

公开(公告)号：US5330920A

公开(公告)日：1994-07-19

申请号：US77570

申请日：1993-06-15

申请人： Hamid R. Soleimani ,  Brian S. Doyle ,  Ara Philipossian

发明人： Hamid R. Soleimani ,  Brian S. Doyle ,  Ara Philipossian

IPC分类号： H01L21/28 ,  H01L21/32 ,  H01L21/8234 ,  H01L29/51 ,  H01L21/265

CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L21/2822 ,  H01L21/32 ,  H01L21/823462 ,  H01L29/518 ,  Y10S148/118 ,  Y10S148/163 ,  Y10S438/981

摘要： A method of controlling gate oxide thickness in the fabrication of semiconductor devices wherein a sacrificial gate oxide layer is formed on a semiconductor substrate surface. Nitrogens ions are implanted into select locations of the substrate through the sacrificial gate oxide layer, and the substrate and the gate oxide layer are then thermally annealed. The sacrificial gate oxide layer is then removed and a gate oxide layer is then formed on the substrate layer wherein the portion of the gate oxide layer formed on the nitrogen ion implanted portion of the substrate is thinner than the portion of the gate oxide layer formed on the non-nitrogen ion implanted portion.

摘要翻译： 在半导体器件的制造中控制栅极氧化物厚度的方法，其中在半导体衬底表面上形成牺牲栅极氧化物层。 硝基离子通过牺牲栅极氧化物层注入到衬底的选择位置中，然后将衬底和栅极氧化物层热退火。 然后去除牺牲栅极氧化物层，然后在衬底层上形成栅极氧化物层，其中形成在衬底的氮离子注入部分上的栅极氧化物层的部分比形成在栅极氧化物层上的部分更薄 非氮离子注入部分。

公开(公告)号：US20100216373A1

公开(公告)日：2010-08-26

申请号：US12392676

申请日：2009-02-25

申请人： Leonard Borucki ,  Yasa Sampurno ,  Sian Theng ,  Ara Philipossian

发明人： Leonard Borucki ,  Yasa Sampurno ,  Sian Theng ,  Ara Philipossian

IPC分类号： B24B49/12 ,  B24B57/02 ,  B24B49/14

CPC分类号： B24B57/02 ,  B24B37/015 ,  B24B49/12

摘要： A method for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising a solid crescent shaped injector the concave trailing edge of which is fitted to the size and shape of leading edge of the polishing head with a gap of between 0 and 3 inches, the bottom surface facing the pad, which rests on the pad with a light load, and through which CMP slurry or components thereof are introduced through one or more openings in the top of the injector and travel through a channel or reservoir the length of the device to the bottom where it or they exit multiple openings in the bottom of the injector, are spread into a thin film, and are introduced at the junction of the surface of the polishing pad and the wafer along the leading edge of the wafer in quantities small enough that all or most of the slurry is introduced between the wafer and the polishing pad, wherein multiple inlets for the introduction of fluids to different points in the channel or directly to the bottom surface of the injector are utilized and some or all of which inlets are fitted with means for controlling the flow of fluid and adjustment is made to the said flow control means during or after polishing to adjust slurry delivery to the wafer surface to improve uniformity of removal rate at the wafer surface.

摘要翻译： 一种用于在半导体晶片的化学机械抛光中在晶片和衬垫之间注入浆料的方法，其包括固体新月形喷射器，其凹形后缘与抛光头的前缘的尺寸和形状相配合，间隙为0 并且3英寸，底表面面向垫，其以轻负载放置在垫上，并且通过该CMP浆料或其组分通过喷射器的顶部中的一个或多个开口引入CMP浆料或其组分，并且穿过通道或容器 设备到底部的距离，其中它们或它们离开喷射器底部的多个开口，被扩散成薄膜，并且在沿着抛光垫的前缘的抛光垫的表面和晶片的接合处被引入 晶片的数量足够小，使得所有或大部分浆料被引入晶片和抛光垫之间，其中多个入口用于将流体引入到 通道或直接到喷射器的底表面，并且其中的一些或所有入口装配有用于控制流体流动的装置，并且在抛光期间或之后对所述流量控制装置进行调整以调节浆料向晶片的输送 表面以提高晶片表面的去除速率的均匀性。

公开(公告)号：US20100186479A1

公开(公告)日：2010-07-29

申请号：US12359772

申请日：2009-01-26

申请人： Leonard Borucki ,  Yun Zhuang ,  Yasa Sampurno ,  Ara Philipossian

发明人： Leonard Borucki ,  Yun Zhuang ,  Yasa Sampurno ,  Ara Philipossian

IPC分类号： G01N3/56

CPC分类号： G01N3/56

摘要： The present invention is a method for determining the location of and distinguishing aggressive diamonds from active diamonds on a diamond conditioner disc, comprising: (a) contacting a diamond conditioner disc with a hard surface, wherein the diamond-containing side of the diamond conditioning disc is facing the hard surface, (b) pushing the conditioner disc a sufficient distance that all diamonds could possibly be scratching the surface at the same time and at least a distance corresponding to the length of the said diamond conditioner disc (c) observing number and position of the scratches left by diamonds on the hard surface to determine the number and position of active diamonds on the diamond conditioner disc, and (d) selecting the diamonds, the marks for which are the most pronounced and which comprise 50% or more of the total furrow area observed for all of the active diamonds in descending order of furrow are plus any diamonds in excess of the number needed to achieve said 50% or more whose individual furrow area is 2% or more, which diamonds are determined to be aggressive diamonds, or impressing the diamond conditioner disc under a load onto a hard surface and the impression of the most aggressive diamonds in the hard surface being confirmed by microscopic examination to in turn confirm the position and aggressiveness of the aggressive diamonds observed or (e) contacting a diamond conditioner disc with a hard surface, wherein the diamond-containing side of the diamond conditioning disc is facing the hard surface, (f) pushing the conditioner disc a sufficient distance that all diamonds could possibly be scratching the surface at the same time and at least a distance corresponding to the length of the said diamond conditioner disc (g) observing number and position of the scratches left by diamonds on the hard surface to determine the number and position of active diamonds on the diamond conditioner disc, (h) the hard surface further comprises a layer of contrasting material such that when the diamond conditioner disc moves across the hard surface, the said diamond conditioner disc crosses the limits of the layer entirely from one end to the other and scratches the layer of contrasting material on the hard surface thereby leaving a visible mark, (i) the said layer is between 8 and 15 microns thick and (j) selecting the diamonds which cut entirely through the said layer allowing backlighting to be easily viewed.

公开(公告)号：US20060217039A1

公开(公告)日：2006-09-28

申请号：US11443390

申请日：2006-05-30

申请人： Toshiro Doi ,  Ara Philipossian ,  Darren DeNardis

发明人： Toshiro Doi ,  Ara Philipossian ,  Darren DeNardis

IPC分类号： B24B49/00

CPC分类号： H01L21/3212 ,  B24B37/0056 ,  B24B37/04 ,  B24B57/02 ,  H01L21/31053

摘要： The polishing apparatus is capable of changing a pH value of slurry to adjust polishing rate and polishing a work piece with high flatness. The polishing apparatus comprises: a pressure vessel; a polishing plate provided in the pressure vessel; a pressing plate pressing a work piece onto the polishing plate; a driving unit relatively moving the polishing plate with respect to the pressing plate so as to polish the work piece; a gas supplying source supplying an alkaline gas or an acid gas into the pressure vessel; a gas discharging section discharging the supplied gas from the pressure vessel; and a slurry supplying unit supplying slurry onto the polishing plate. A pH value of the slurry is adjusted by dissolving the alkaline gas or the acid gas in the slurry.

摘要翻译： 抛光装置能够改变浆料的pH值以调节抛光速率并且以高平坦度抛光工件。 抛光装置包括：压力容器; 设置在压力容器中的抛光板; 将工件压在抛光板上的按压板; 驱动单元，相对于所述加压板相对地移动所述抛光板以抛光所述工件; 向压力容器供给碱性气体或酸性气体的气体供给源; 气体排出部，从所述压力容器排出供给气体; 以及将浆料供给到研磨板上的浆料供给单元。 通过将碱性气体或酸性气体溶解在浆料中来调节浆料的pH值。

公开(公告)号：US5407850A

公开(公告)日：1995-04-18

申请号：US85321

申请日：1993-06-29

申请人： Brian S. Doyle ,  Ara Philipossian

发明人： Brian S. Doyle ,  Ara Philipossian

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/51 ,  H01L21/265 ,  H01L21/335

CPC分类号： H01L21/28185 ,  H01L29/51 ,  H01L29/513 ,  H01L29/66772 ,  H01L21/28194 ,  H01L21/28211 ,  Y10S438/91

摘要： Threshold optimization for SOI transistors is achieved through the formation of a layer of positive charge within the gate to correspond to the positive polarity formed in the substrate by ion implantation for threshold voltage control. A positive charge layer is formed by furnishing sulfur ions on the substrate before growth of an oxide to form a portion of the gate oxide. The sulfur will form a charge layer on the surface of the oxide, and an additional oxide is then deposited on the same to form the gate oxide as a sandwich with the positive charge layer in the same.

摘要翻译： SOI晶体管的阈值优化通过在栅极内形成正电荷层来实现，以对应于通过用于阈值电压控制的离子注入在衬底中形成的正极性。 通过在生长氧化物之前在衬底上提供硫离子以形成栅极氧化物的一部分来形成正电荷层。 硫将在氧化物的表面上形成电荷层，然后在其上沉积另外的氧化物以形成作为三明治的栅极氧化物，其中正电荷层在其中。