公开(公告)号：US5729639A

公开(公告)日：1998-03-17

申请号：US442291

申请日：1995-05-16

申请人： E. E. Russell

发明人： E. E. Russell

IPC分类号： B64G1/24 ,  G01S3/28 ,  G01S7/40 ,  G01S7/48 ,  H04N5/33 ,  H04N5/365 ,  G06K9/00

CPC分类号： H04N5/365 ,  H04N5/2259 ,  H04N5/33

摘要： A responsivity calibration system for use with an array of detectors. The system includes a first mechanism for changing the orientation of the detector array from the first orientation, during an operational mode, to a second orientation, during a calibration mode, in which each detector sequentially samples the same portion of the same scene. The system adjusts the output generated by each of the detectors in the first orientation in response to an associated signal generated by that respective detector in the second orientation. In a specific implementation, a normalization factor is generated based on the output of each detector during the calibration mode. The normalization factor is stored and multiplied by the outputs of the detectors during the operational mode. Hence responsivity correction is implemented without the need for a wide area scene of extreme uniformity or an on-board target.

摘要翻译： 用于检测器阵列的响应校准系统。 该系统包括第一机构，用于在校准模式期间将检测器阵列的方向从操作模式期间的第一取向改变到第二取向，其中每个检测器顺序地采样同一场景的相同部分。 该系统响应于由该相应检测器在第二取向中产生的相关联信号，调整由第一取向中的每个检测器产生的输出。 在具体实现中，在校准模式期间基于每个检测器的输出生成归一化因子。 归一化因子在操作模式期间被存储并乘以检测器的输出。 因此，不需要广泛的场均的极度均匀性或车载目标的情况下执行响度校正。

公开(公告)号：US5646437A

公开(公告)日：1997-07-08

申请号：US252986

申请日：1994-06-02

申请人： Ichiro Kasai ,  John R. Toman

发明人： Ichiro Kasai ,  John R. Toman

IPC分类号： H01L31/0216 ,  H01L27/14

CPC分类号： H01L31/02161

摘要： The light receiving or back-side surface (22) of an indium antimonide (InSb) photodetector device (10) substrate (12) is cleaned to remove all native oxides of indium and antimony therefrom. A passivation layer (26) is then formed on the surface (22) of a material such as silicon dioxide, silicon suboxide and/or silicon nitride which does not react with InSb to form a structure which would have carrier traps therein and cause flashing. The device (10) is capable of detecting radiation over a continuous spectral range including the infrared, visible and ultraviolet regions.

摘要翻译： 锑化锑（InSb）光电检测器件（10）衬底（12）的光接收或背面表面（22）被清洁以从其中除去铟和锑的所有天然氧化物。 然后在诸如二氧化硅，低氧化硅和/或氮化硅的材料的表面（22）上形成钝化层（26），其不与InSb反应以形成其中具有载流子阱并引起闪烁的结构。 装置（10）能够在包括红外线，可见光和紫外线区域的连续光谱范围内检测辐射。

公开(公告)号：US5646426A

公开(公告)日：1997-07-08

申请号：US570740

申请日：1995-12-12

申请人： Charles A. Cockrum ,  Eric F. Schulte

发明人： Charles A. Cockrum ,  Eric F. Schulte

IPC分类号： H01L21/60 ,  H01L27/146 ,  H01L31/103 ,  H01L31/0328 ,  H01L27/10 ,  H01L31/00

CPC分类号： H01L24/11 ,  H01L27/1465 ,  H01L31/1032 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/01052 ,  H01L2924/01067 ,  H01L2924/01072 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/10329 ,  H01L2924/14

摘要： A photoresponsive device (10) includes a body comprised of semiconductor material comprised of elements selected from Group IIB-VIA; and at least one electrically conductive contact pad (20) formed over a surface of the semiconductor material. The at least one electrically conductive contact pad is comprised of metal nitride, such as MoN, and serves as a diffusion barrier between an Indium bump (22a, 22b) and the underlying semiconductor material. A passivation layer (18), such as a layer of wider bandgap CdTe, can be formed to overlie the surface of said semiconductor material. A p-n junction is contained within a mesa structure (10a) that comprises a portion of an n-type base layer (14) and a p-type cap layer (16). A first contact pad is disposed over the cap layer and a second contact pad is disposed over the base layer. The device further includes a first layer (24a) comprised of Au that is disposed between a bottom surface of the first contact pad and the cap layer; a second layer (24b) comprised of Cr that is disposed between a bottom surface of the second contact pad and the base layer; and a third layer (26) comprised of nickel that is disposed upon a top surface of the first and second contact pads. A first In bump (22a) is disposed upon the third layer over the first contact pad and a second indium bump (22b) disposed upon the third layer over the second contact pad. The metal nitride is applied, preferably, by a reactive sputtering technique.

摘要翻译： 光响应装置（10）包括由半导体材料构成的主体，所述半导体材料由选自组IIB-VIA的元素组成; 以及形成在所述半导体材料的表面上的至少一个导电接触焊盘（20）。 所述至少一个导电接触焊盘由诸如MoN的金属氮化物组成，并且用作铟凸块（22a，22b）和下面的半导体材料之间的扩散阻挡层。 可以形成诸如更宽带隙CdTe的层的钝化层（18）以覆盖在所述半导体材料的表面上。 p-n结包含在包括n型基底层（14）和p型覆盖层（16）的一部分的台面结构（10a）内。 第一接触垫设置在盖层上方，第二接触垫设置在基层上。 该装置还包括由Au构成的第一层（24a），其设置在第一接触焊盘的底表面和盖层之间; 由Cr构成的第二层（24b），其设置在第二接触焊盘的底表面和基层之间; 以及由镍构成的第三层（26），其设置在第一和第二接触焊盘的顶表面上。 第一凹凸（22a）设置在第一接触焊盘上的第三层上，并且在第二接触焊盘上设置在第三层上的第二铟凸块（22b）。 优选地，通过反应溅射技术施加金属氮化物。

公开(公告)号：US5602511A

公开(公告)日：1997-02-11

申请号：US486492

申请日：1995-06-07

申请人： James T. Woolaway

发明人： James T. Woolaway

IPC分类号： H03F3/08 ,  H03G1/00

CPC分类号： H03F3/082 ,  H03G1/0094

摘要： A Compressing Capacitively Coupled Transimpedance Amplifier (CCTIA) circuit (10) has an amplifier (AMP) with a variable capacitance feedback network (C1, C2, C3, Q1, Q2) coupled between a current receiving amplifier input node and an amplifier output node. The output node outputs a voltage in response to a received current. The variable capacitance feedback network is responsive to the output voltage for establishing one of a plurality of different transimpedance values for the circuit such that the circuit exhibits a greatest transimpedance value for an input current having a magnitude below a threshold magnitude, and a lesser transimpedance value for an input current having a magnitude equal to or above the threshold magnitude.

摘要翻译： 压缩电容耦合阻抗放大器（CCTIA）电路（10）具有耦合在电流接收放大器输入节点和放大器输出节点之间的可变电容反馈网络（C1，C2，C3，Q1，Q2）的放大器（AMP）。 输出节点输出响应于接收电流的电压。 可变电容反馈网络响应于输出电压以建立电路的多个不同跨阻值之一，使得该电路对具有低于阈值幅度的幅度的输入电流呈现出最大的跨阻抗值，并且较小的跨阻值 用于具有等于或大于阈值大小的幅度的输入电流。

公开(公告)号：US5581084A

公开(公告)日：1996-12-03

申请号：US486491

申请日：1995-06-07

申请人： George R. Chapman ,  Bonnie A. Baumgratz ,  Michael Ray

发明人： George R. Chapman ,  Bonnie A. Baumgratz ,  Michael Ray

IPC分类号： H01L31/10 ,  H01L27/146 ,  H01L31/103 ,  G01J1/00

CPC分类号： H01L31/0352 ,  H01L27/14649 ,  H01L31/1032

摘要： An array of dual-band HgCdTe radiation detectors (10) wherein individual detectors include a first layer (14) having a first type of electrical conductivity and a bandgap selected for absorbing radiation within a first spectral band. The radiation detectors also each include a second layer (16) overlying the first layer. The second layer has a second type of electrical conductivity that is opposite the first type of electrical conductivity. Each radiation detector further includes a third layer (18) overlying the second layer, the third layer having the first type of electrical conductivity and a bandgap selected for absorbing radiation within a second spectral band. The first and second spectral bands are selected from SWIR, MWIR, LWIR, and VLWIR. The first, second and third layers are contained within at least one mesa structure (10a, 10b) that supports on a top surface thereof a first electrical contact (24) to the first layer and a second electrical contact (28) to the third layer. The at least one mesa structure further supports on a sidewall region (10b') thereof an electrical contact (30) to the second layer. The sidewall electrical contact is coupled to an electrically conductive bus that is conductively coupled in common to mesa structure sidewall electrical contacts of the plurality of radiation detectors. As a result, each radiation detector site is simplified in construction, and may be reduced in area over a site wherein a separate (third) contact, such as an indium bump, is required to contact the second layer.

摘要翻译： 一种双波段HgCdTe辐射检测器（10）阵列，其中各检测器包括具有第一类型导电性的第一层（14）和被选择用于吸收第一光谱带内的辐射的带隙。 辐射检测器还各自包括覆盖第一层的第二层（16）。 第二层具有与第一类导电性相反的第二类导电性。 每个辐射检测器还包括覆盖第二层的第三层（18），具有第一类型导电性的第三层和被选择用于吸收第二光谱带内的辐射的带隙。 第一和第二光谱带选自SWIR，MWIR，LWIR和VLWIR。 所述第一层，第二层和第三层包含在至少一个台面结构（10a，10b）中，所述台面结构（10a，10b）在其顶表面上支撑到所述第一层的第一电接触（24）和到所述第三层的第二电接触 。 至少一个台面结构还在其侧壁区域（10b'）上支撑到第二层的电触头（30）。 侧壁电触点耦合到导电总线，该导电总线与多个辐射探测器的台面结构侧壁电触头共同导电耦合。 结果，每个辐射检测器位置被简化为结构，并且可以在需要接触第二层的单独（第三）接触（例如铟凸块）的位置上减小面积。

公开(公告)号：US5559336A

公开(公告)日：1996-09-24

申请号：US270965

申请日：1994-07-05

申请人： Kenneth Kosai ,  Jerry A. Wilson ,  Bonnie A. Baumgratz

发明人： Kenneth Kosai ,  Jerry A. Wilson ,  Bonnie A. Baumgratz

IPC分类号： H01L27/146 ,  H01L31/0296

CPC分类号： H01L27/1465 ,  H01L27/14627

摘要： A radiation detector (1) unit cell (10) includes an n-p+ LWIR photodiode that is vertically integrated with a p+-n MWIR photodiode in a n-p+-n structure. Electrical contact is made separately to each of these layers in order to simultaneously detect both the LWIR and MWIR bands. The electrical contact is made via indium bump interconnections (23, 25, 27) enabling the unit cell to be subsequently hybridized with a topside mounted electronic readout integrated circuit (30). The n-p+-n structure in a given pixel of an array of radiation detector pixels is electrically isolated from all neighboring pixels by a trench (28) that is etched into an underlying substrate (12). To compensate for a reduction in the optically sensitive area due to the placement of the electrical contacts and the presence of the pixel isolation trench, a microlens (34) may be provided within, upon, or adjacent to the backside, radiation receiving surface of the substrate in registration with the unit cell.

摘要翻译： 辐射检测器（1）单位电池（10）包括n-p + LWIR光电二极管，其以n-p + -n结构中的p + -n MWIR光电二极管垂直集成。 为了同时检测LWIR和MWIR波段，电接触分别与这些层中的每一层分开。 通过铟凸块互连（23,25,27）制造电接触，使得单位电池随后可以与顶侧安装的电子读出集成电路（30）杂交。 放射线检测器像素阵列的给定像素中的n-p + -n结构通过被蚀刻到下面的衬底（12）中的沟槽（28）与所有相邻像素电隔离。 为了补偿由于电触点的放置和像素隔离沟槽的存在引起的光敏区域的减小，微透镜（34）可以设置在背面的内侧，之后或邻近的背面的辐射接收表面 衬底与单元电池配准。

公开(公告)号：US5450352A

公开(公告)日：1995-09-12

申请号：US13898

申请日：1993-02-05

申请人： Christ Ftaclas ,  Robert R. Crout

发明人： Christ Ftaclas ,  Robert R. Crout

IPC分类号： G02B27/58 ,  G01M11/00

CPC分类号： G02B27/58

摘要： The invention relates to a method for reducing a sidelobe impact of low order aberrations using a coronagraph (2) having an apodized occulting mask (10), comprising the steps of: (a) providing in the coronagraph (2) the apodized occulting disk (10) having a transmission profile which graduates from opaque to transparent along its radius and the negative of whose amplitude transmission is a Gaussian profile; (b) determining a predicted sidelobe impact of the aberrations from a particular mix of low order aberration measured in a system as described by the Zernike polynomials; (c) applying the coronagraph to a system point spread function using a given rms width for the Gaussian profile describing the apodized occulting mask (10) and determining an attenuation level of the aberration sidelobes; (d) scaling the Gaussian occulting mask (10) profile to a wider rms width if the sidelobe attenuation level is too low; and (e) repeating the steps (b) through (d) until the attenuation level is acceptable.

摘要翻译： 本发明涉及一种使用具有变迹掩蔽掩模（10）的冠状物（2）减少低阶像差的旁瓣影响的方法，包括以下步骤：（a）在冠状段（2）中提供变迹的掩蔽盘 10）具有沿其半径从不透明到透明的渐变的透射轮廓，并且其幅度传播的负是高斯分布; （b）确定由Zernike多项式描述的在系统中测量的低阶像差的特定混合的像差的预测旁瓣影响; （c）使用描述所述变迹掩蔽掩模（10）的高斯分布的给定均方根宽度将所述冠状节应用于系统点扩展函数，并确定像差旁瓣的衰减水平; （d）如果旁瓣衰减水平太低，则将高斯掩蔽掩模（10）轮廓缩放到更宽的均方根宽度; 和（e）重复步骤（b）至（d），直到衰减水平是可接受的。

公开(公告)号：US5414294A

公开(公告)日：1995-05-09

申请号：US40710

申请日：1993-03-31

申请人： Russell D. Granneman ,  William O. McKeag

发明人： Russell D. Granneman ,  William O. McKeag

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H01L27/14 ,  H01L31/00 ,  H01L31/02

CPC分类号： H01L31/035281 ,  H01L27/14643 ,  H01L27/14649 ,  Y02E10/50

摘要： A radiation detector includes a photovoltaic diode mesa structure (16) having of a plurality of sub-mesa structures (16a, 16b). Each of said sub-mesa structures includes a first layer (14a) of semiconductor material having a first type of electrical conductivity and a second layer (14b) having a second type of electrical conductivity such that a p-n junction is formed between the first and the second layers. Metalization (24) is disposed within a trench (30a) that runs between the sub-mesas and includes a tab portion (24a) that extends upwardly over a sidewall of each of said sub-mesa structures so as to electrically contact the second layer contained within each. As a result, each of said sub-mesa structures are electrically connected in parallel. The trench is disposed parallel to a radiation scan axis of the radiation detector and orthogonal to a radiation cross-scan axis of the radiation detector for reducing a width of surface features across the scan axis, thereby reducing a light signature of the detector.

摘要翻译： 辐射检测器包括具有多个子台面结构（16a，16b）的光伏二极管台面结构（16）。 每个所述子台面结构包括具有第一类型导电性的第一半导体材料层（14a）和具有第二类导电性的第二层（14b），使得在第一和第二层之间形成pn结 第二层。 金属化（24）设置在在子台面之间延伸的沟槽（30a）内，并且包括在每个所述子台面结构的侧壁上向上延伸的突出部分（24a），以便电接触所包含的第二层 在每一个。 结果，每个所述子台面结构并联电连接。 沟槽平行于辐射检测器的辐射扫描轴设置并且垂直于辐射检测器的辐射横向扫描轴线，用于减小穿过扫描轴线的表面特征的宽度，由此减小检测器的光签名。

公开(公告)号：US5401986A

公开(公告)日：1995-03-28

申请号：US270527

申请日：1994-07-05

申请人： Charles A. Cockrum ,  Francis I. Gesswein ,  Eric F. Schulte

发明人： Charles A. Cockrum ,  Francis I. Gesswein ,  Eric F. Schulte

IPC分类号： H01L21/443 ,  H01L21/471 ,  H01L27/146 ,  H01L31/103 ,  H01L27/14

CPC分类号： H01L21/471 ,  H01L21/443 ,  H01L27/1465 ,  H01L31/1032 ,  H01L2224/13109

摘要： A photoresponsive device wherein the device includes semiconductor material, such as a cap region (14a), comprised of elements selected from Group IIB-VIA. A molybdenum contact pad (16) is formed upon a surface of the cap region, and a molybdenum ground contact pad is formed on a surface of a base region (12). A wide bandgap semiconductor passivation layer (20) overlies the surface of the cap region and also partially overlies the molybdenum contact pad. A dielectric layer (22) overlies the passivation layer, and an indium bump (24) is formed upon the molybdenum contact pad. The dielectric layer is in intimate contact with side surfaces of the indium bump such that no portion of the molybdenum contact pad can be physically contacted from a top surface of the dielectric layer. This method eliminates the possibility of unwanted chemical reactions occurring between the In and the underlying contact pad metal. The method also deposits the contact metal before the deposition of the passivation and before a high temperature anneal, with windows to the contact being opened after the anneal so as to reduce localized stresses at the edges of the windows.

摘要翻译： 一种光响应装置，其中所述装置包括半导体材料，例如由选自组IIB-VIA的元件组成的帽区（14a）。 在盖区域的表面上形成钼接触焊盘（16），并且在基部区域（12）的表面上形成钼接地焊盘。 宽带隙半导体钝化层（20）覆盖在盖区域的表面上，并且还部分覆盖在钼接触焊盘上。 介电层（22）覆盖在钝化层上，并且在钼接触焊盘上形成铟凸块（24）。 电介质层与铟凸块的侧表面紧密接触，使得钼接触焊盘的任何部分不能从电介质层的顶表面物理接触。 该方法消除了In和底层接触垫金属之间发生不希望的化学反应的可能性。 该方法还在沉积钝化之前和在高温退火之前沉积接触金属，在退火之后窗口将触点断开，以减少窗口边缘的局部应力。

公开(公告)号：US5386920A

公开(公告)日：1995-02-07

申请号：US108413

申请日：1993-08-18

申请人： Timothy S. Romano ,  Robert E. Zahuta ,  Karl H. Neumann ,  Leonard E. Peck, Jr.

发明人： Timothy S. Romano ,  Robert E. Zahuta ,  Karl H. Neumann ,  Leonard E. Peck, Jr.

IPC分类号： B23K20/00 ,  B23K20/02

CPC分类号： B23K20/002 ,  B23K20/02

摘要： A vacuum package assembly (20) is prepared by self-welding the flanges (32 and 43) of two housings (28 and 36) together under an applied pressure, while the housings (28 and 36) and any enclosed structure or device are contained within an evacuated enclosure. The flanges (32 and 43) are preferably made of copper, with their respective self-welding members (34 and 46) specially prepared to enhance self-welding performance. The preferred treatment for the self-welding members (34 and 46) is to deposit a thin layer of nickel onto the self-welding members (34 and 46 ), deposit a thin layer of gold over the nickel, and heat the bonding member to elevated temperature to interdiffuse the gold into the self-welding member (34 and 46 ).

摘要翻译： 通过在施加的压力下将两个壳体（28和36）的凸缘（32和43）自动焊接在一起，同时壳体（28和36）以及任何封闭的结构或装置被包含在一起来制备真空包装组件（20） 在一个抽真空的外壳内。 凸缘（32和43）优选地由铜制成，其各自的自身焊接部件（34和46）被专门准备以提高自焊性能。 自焊构件（34和46）的优选处理是将镍薄层沉积到自焊构件（34和46）上，在镍上沉积一层薄金层，并将粘结构件加热至 升高温度以将黄金相互扩散到自焊构件（34和46）中。