Numerical control system and motor drive controller

    公开(公告)号:US11630437B2

    公开(公告)日:2023-04-18

    申请号:US16638751

    申请日:2017-08-30

    Abstract: A numerical control system according to the present invention controls machine drive systems included in a machine tool that performs machining using a tool, according to a numerical control program, and includes a coordinate transformation unit that acquires a disturbance force or a disturbance torque applied to each machine drive system, and coordinate-transforms the disturbance force or the disturbance torque into a tool reference coordinate system for output, and an identification unit that calculates cutting process parameters that determine characteristics of a cutting process model and dynamic characteristic parameters that determine characteristics of a dynamics model of the machine tool, using the disturbance force or the disturbance torque output from the coordinate transformation unit, states of the machine drive systems, predetermined equation models, and cutting conditions. The equation models define relationships between the cutting process parameters, the dynamic characteristic parameters, and the disturbance force or the disturbance torque.

    Vapor phase epitaxial growth device

    公开(公告)号:US11591717B2

    公开(公告)日:2023-02-28

    申请号:US16649371

    申请日:2018-09-07

    Abstract: A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.

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