公开(公告)号：US4591896A

公开(公告)日：1986-05-27

申请号：US472237

申请日：1983-03-04

申请人： Seiki Kikuchi

发明人： Seiki Kikuchi

IPC分类号： H01L21/52 ,  H01L23/04 ,  H01L23/32 ,  H01L23/48 ,  H01L23/42 ,  H01L23/44 ,  H01L23/46

CPC分类号： H01L24/72 ,  H01L23/32 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/1301

摘要： An assembled semiconductor device comprising a base constituting one electrode, a semiconductor pellet mounted on the base, an insulation ring located to surround the semiconductor pellet and having a height larger than the thickness of the semiconductor pellet, an electrode member mounted on the insulation ring and in electrical contact with the upper surface of the semiconductor pellet, a lead electrode disposed on the electrode member, a pressure plate mounted on the lead electrode through an insulation member or being formed of an insulation material and disposed on the lead electrode, a bolt screwed into the base, and a pressing device which presses the semiconductor pellet through the pressure plate. The inventive device simplifies the assembling process, makes the maintenance easy, and improves the air-tightness for the semiconductor pellet.

摘要翻译： 一种组装的半导体器件，包括构成一个电极的基座，安装在基座上的半导体芯片，围绕半导体芯片的绝缘环，其高度大于半导体芯片的厚度;安装在绝缘环上的电极部件， 与半导体芯片的上表面电接触，设置在电极构件上的引线电极，通过绝缘构件安装在引线电极上或由绝缘材料形成并设置在引线电极上的压板，螺栓拧紧 并且通过压板挤压半导体颗粒的按压装置。 本发明的装置简化了组装过程，使得维护变得容易，并提高了半导体颗粒的气密性。

公开(公告)号：US4573067A

公开(公告)日：1986-02-25

申请号：US587018

申请日：1984-03-07

申请人： David B. Tuckerman ,  Roger F. W. Pease

发明人： David B. Tuckerman ,  Roger F. W. Pease

IPC分类号： F28D15/04 ,  H01L23/473 ,  H01L23/34 ,  H01L23/36 ,  H01L23/46

CPC分类号： F28F3/12 ,  F28D15/046 ,  H01L23/473 ,  H01L24/32 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/10158 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14

摘要： A semiconductor chip having improved heat dissipation capability. The back surface of a semiconductor chip is provided with microscopic channels defined by fins in intimate contact with the chip. A cover is affixed to the fins to enclose the channels for the laminar flow of coolant fluid. The chip can be mounted in a recessed portion of a dual in-line package (DIP) with conductive tubes integral with the package providing the flow of coolant. Advantageously, the tubes can function as power busses to the integrated circuit.

摘要翻译： 具有改善散热能力的半导体芯片。 半导体芯片的背面设置有与芯片紧密接触的翅片限定的微细通道。 盖板固定在翅片上以封闭冷却剂流体层流的通道。 芯片可以安装在双列直插式封装（DIP）的凹陷部分，导电管与封装集成，提供冷却剂流。 有利地，管可以用作集成电路的功率总线。

公开(公告)号：US4520384A

公开(公告)日：1985-05-28

申请号：US419398

申请日：1982-09-17

申请人： Erwin Klein

发明人： Erwin Klein

IPC分类号： H01L23/44 ,  H01L23/427 ,  H01L23/473 ,  H01L25/16 ,  H01L23/34 ,  H01L23/46

CPC分类号： H01L23/427 ,  H01L23/473 ,  H01L25/16 ,  H01L2924/0002

摘要： A power semiconductor component for boiling cooling or liquid cooling includes a semiconductor crystal disc having two main electrodes and, optionally, one or more control electrodes. The disc is built into a liquid and gas-tight housing through which an electrically insulating coolant can flow. The housing is formed substantially of a ceramic sleeve with metallic covers which are disposed on both sides and the metallic covers are directly acted upon by the coolant. Electric circuitry, especially resistors and diodes, are integrated in a circuitry module which is in force-locking thermal contact with the metallic cover of the power semiconductor component.

摘要翻译： 用于沸腾冷却或液体冷却的功率半导体部件包括具有两个主电极和可选地一个或多个控制电极的半导体晶体盘。 盘被内置在液体和气密的壳体中，电绝缘的冷却剂可以通过该壳体流动。 壳体基本上由具有设置在两侧的金属盖的陶瓷套筒形成，并且金属盖被冷却剂直接作用。 电路，特别是电阻器和二极管集成在电路模块中，该电路模块与功率半导体部件的金属盖有效地锁定热接触。

公开(公告)号：US4519447A

公开(公告)日：1985-05-28

申请号：US584309

申请日：1984-03-05

申请人： Raymond E. Wiech, Jr.

发明人： Raymond E. Wiech, Jr.

IPC分类号： H01L23/13 ,  H01L23/36 ,  H01L29/06 ,  H02K44/04 ,  H05K1/09 ,  H05K3/10 ,  F28D15/00 ,  H01L23/46

CPC分类号： H05K3/101 ,  H01L23/13 ,  H01L23/36 ,  H02K44/04 ,  H02K99/00 ,  H01L29/0657 ,  H01L2924/0002 ,  H05K1/092 ,  H05K2201/09036 ,  H05K2201/09118 ,  H05K3/107

摘要： A system for cooling a substrate via a continuous enclosed path within the substrate that passes closely adjacent heat producing components on or adjacent the substrate. According to a first embodiment, heat, where located on the substrate, is transmitted to a heat sink in the vapor phase by a change in phase of a liquid in the path to a vapor, thereby creating little change in temperature from heat source to heat sink and maintaining the substrate and components at substantially the same substantially constant temperature. According to a second embodiment, heat is removed by a circulating conductive liquid in the continuous enclosed path which takes up heat at the sources and removes the heat at a sink in the path. The conductive liquid is part of a magnetohydrodynamic (MHD) cooling system wherein, at one location in the path, a current is applied to the liquid orthogonal to the path and a magnetic field is applied orthogonal to the path and the current flow to create a force on the conductive liquid along the path.

摘要翻译： 一种用于通过衬底内的连续封闭路径冷却衬底的系统，该衬底通过邻近衬底上邻近的发热部件。 根据第一实施例，位于基板上的热量通过在蒸汽路径中的液体的相位变化而被传递到气相的散热器，从而从热源到热量几乎没有变化 吸收并保持基板和部件基本相同的基本上恒定的温度。 根据第二实施例，通过连续封闭路径中的循环导电液体除去热量，其在源处占据热量并去除路径中的水槽处的热量。 导电液体是磁流体动力学（MHD）冷却系统的一部分，其中，在路径的一个位置处，将电流施加到与路径正交的液体，并且磁场垂直于路径和电流施加，以产生 沿着路径对导电液体施力。

公开(公告)号：US4327370A

公开(公告)日：1982-04-27

申请号：US53510

申请日：1979-06-28

申请人： Sebastian W. Kessler, Jr.

发明人： Sebastian W. Kessler, Jr.

IPC分类号： H05K7/20 ,  H01L23/14 ,  H01L23/427 ,  H01L23/48 ,  H01L23/482 ,  H01L23/64 ,  H01L29/417 ,  H01L23/42 ,  H01L23/44 ,  H01L23/46

CPC分类号： H01L23/4824 ,  H01L23/147 ,  H01L23/427 ,  H01L23/647 ,  H01L24/72 ,  H01L29/41708 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1301 ,  H01L2924/19043 ,  H01L2924/3011

摘要： A semiconductor device comprises a body of semiconductor material having a base-emitter structure on a first surface of the body. The base emitter structure includes a plurality of discrete emitter regions interdigitated with a base region having a base contact on the base region. A base contact ring is attached coaxially to the base contact. An improved base terminal structure comprises a conductive base feed-through ring having a base terminal integral with the feed-through ring. The base feed-through ring is spaced from and concentric with the base contact ring. The base terminal structure further includes a resilient contact ring attached to the base contact ring and the base feed-through ring to provide a low impedance interconnection between the base contact ring and the base feed-through ring.

摘要翻译： 半导体器件包括在本体的第一表面上具有基极 - 发射极结构的半导体材料体。 基极发射极结构包括多个离散的发射极区域，其与在基极区域上具有基极接触的基极区域交错。 底座接触环与基座接触件同轴连接。 改进的基本端子结构包括具有与馈通环一体的基极端子的导电基底馈通环。 基座穿通环与基部接触环间隔开并与基座接触环同心。 基座端子结构还包括附接到基部接触环和基部馈通环的弹性接触环，以在基部接触环和基部馈通环之间提供低阻抗互连。

公开(公告)号：US4240099A

公开(公告)日：1980-12-16

申请号：US019607

申请日：1979-03-12

申请人： Jurgen Brandt ,  Ludwig Herold ,  Wolfgang Pikorz ,  Alois Sonntag

发明人： Jurgen Brandt ,  Ludwig Herold ,  Wolfgang Pikorz ,  Alois Sonntag

IPC分类号： H01L23/04 ,  H01L23/051 ,  H01L23/42 ,  H01L23/44 ,  H01L23/46

CPC分类号： H01L23/051 ,  H01L24/01 ,  H01L2924/1301 ,  H01L2924/351

摘要： A high performance, wafer-shaped semiconductor device of the type including a wafer-shaped semiconductor element, a pair of electrodes located on the surfaces of the element, a pair of cylindrical metal bodies contacting the electrodes, an insulating ring enclosing and centering the metal bodies and the semiconductor element and a plastic jacket surrounding the insulating ring for tightly encasing the semiconductor device. In addition, there is provided a pair of annular sheet metal strips each of which has an inner edge region fastened to one of the cylindrical metal bodies and a corrugated chemically roughened outer edge region which is embedded in the plastic jacket. A powder coating is applied to the chemically roughened outer edge region for the purpose of providing a pressure and oil-tight housing for the semiconductor device.

摘要翻译： 一种高性能晶片形半导体器件，其类型包括晶片状半导体元件，位于元件表面上的一对电极，与电极接触的一对圆柱形金属体，围绕金属的绝缘环 主体和半导体元件以及围绕绝缘环的塑料护套，用于紧密地封装半导体器件。 另外，还提供了一对环状的金属板条，每一个都具有固定在其中一个圆柱形金属体上的内边缘区域和嵌入塑料外壳中的瓦楞化学粗糙化的外边缘区域。 为了提供用于半导体器件的压力和油密封的外壳，将粉末涂层施加到化学粗糙化的外边缘区域。

公开(公告)号：US4218695A

公开(公告)日：1980-08-19

申请号：US916197

申请日：1978-06-16

申请人： Werner Egerbacher ,  Heinz Martin ,  Werner Mitzkus ,  Dieter Wunderlich

发明人： Werner Egerbacher ,  Heinz Martin ,  Werner Mitzkus ,  Dieter Wunderlich

IPC分类号： H01L23/40 ,  H01L23/48 ,  H01L25/07 ,  H01L25/18 ,  H01L23/42 ,  H01L23/44 ,  H01L23/46

CPC分类号： H01L23/4006 ,  H01L24/72 ,  H01L25/072 ,  H01L2023/4025 ,  H01L2023/4081 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/1301

摘要： Semiconductor component includes a closed housing having a base and a cover and being formed with a plurality of recesses therewithin, a plurality of semiconductor elements received in the recesses, respectively, and having at least two poles, a plurality of contact strips heat-conductively connected to and electrically insulated from the housing base, one of the poles of each of the semiconductor elements being in contact with a respective one of the contact strips and therethrough being in heat-conductive contact with the housing base, a plurality of supply electrodes, respectively, connected to another of the poles of the respective semiconductor elements, the respective contact strip in contact with a respective pole of one of the semiconductor elements and the respective supply electrode connected to a respective pole of another of the semiconductor elements being electrically connected to one another, a cross-piece disposed in the housing between the recesses wherein the semiconductor elements are received, and means secured to the crosspiece for yieldably biasing the supply electrodes against the semiconductor elements, the contact strips and the contact electrodes extending out of the housing and forming terminals for the respective semiconductor elements.

摘要翻译： 半导体部件包括具有基部和盖并且在其中形成有多个凹部的封闭壳体，分别容纳在凹部中并具有至少两个极的多个半导体元件，多个接触带热传导连接 与壳体基座电绝缘，每个半导体元件的极中的一个与相应的一个接触条和其中的一个接触，分别与壳体基座，多个供电电极导热接触 连接到各个半导体元件的另一个极，与半导体元件之一的相应极接触的相应接触条和连接到另一个半导体元件的相应极的相应电极电连接到一个 另一个，设置在壳体之间的半圆形的凹部之间的横向件 接收元件，并且固定到横档上的装置，用于将供电电极屈服偏置抵靠半导体元件，接触片和接触电极延伸出壳体并形成用于各个半导体元件的端子。

公开(公告)号：US4141030A

公开(公告)日：1979-02-20

申请号：US751480

申请日：1976-12-16

申请人： Dieter Eisele ,  Klaus Weimann

发明人： Dieter Eisele ,  Klaus Weimann

IPC分类号： H01L23/34 ,  H01L21/52 ,  H01L23/051 ,  H01L23/36 ,  H01L23/48 ,  H01L23/42 ,  H01L23/44 ,  H01L23/46

CPC分类号： H01L23/051 ,  H01L23/36 ,  H01L24/72 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/1301

摘要： A high-power semiconductor assembly of the disk-cell construction has an insulating housing and exhibits electrical and thermal pressure-contacting of the semiconductor chip. At least two zones of different conduction types are provided within the chip and the same is clamped, in an essentially doubly symmetrical arrangement with respect to the mid-plane of the chip and the central axis perpendicular thereto, with the interposition of pressure plates, heat-conducting paste, and electrodes, particularly cup-shaped electrodes with their open sides disposed away from the main surfaces of the semiconductor chip, and between two terminal electrodes serving as heat sinks.

摘要翻译： 盘式电池结构的大功率半导体组件具有绝缘壳体并且表现出半导体芯片的电压和热压接触。 至少两个不同导电类型的区域设置在芯片内，并且相对于芯片的中间平面和与其垂直的中心轴线以相当于双重对称的方式被夹紧，并且插入压力板，加热 导电膏和电极，特别是其开口侧远离半导体芯片的主表面以及用作散热器的两个端子电极之间的杯形电极。

公开(公告)号：US3989099A

公开(公告)日：1976-11-02

申请号：US559392

申请日：1975-03-17

申请人： Isamu Hosono ,  Yoshiro Shikano

发明人： Isamu Hosono ,  Yoshiro Shikano

IPC分类号： F25D9/00 ,  G12B15/02 ,  H01L23/40 ,  H01L23/427 ,  H02M7/04 ,  H01L23/46

CPC分类号： H01L23/427 ,  H01L23/4006 ,  H01L2023/4025 ,  H01L2924/0002

摘要： A plurality of semiconductor elements alternating in compressive contact relationship hollow heat dissipation blocks are disposed below a coolant reservoir filled with a condensible coolant in its liquid phase having a liquid surface. The hollow blocks are connected to the reservoir through respective connection tubes to be filled with the liquid coolant. A condenser is disposed above the reservoir. One auxiliary tube is disposed within each connection tube and has an upper open end located below the liquid surface and short of a point where a condensed coolant from the condenser flows into the reservoir and a lower end opening within the associated block.

摘要翻译： 以压缩接触关系交替的多个半导体元件空心散热块布置在填充有具有液体表面的液相中的可冷凝冷却剂的冷却剂储存器的下方。 中空块通过相应的连接管连接到储存器，以填充液体冷却剂。 冷凝器设置在储存器的上方。 一个辅助管设置在每个连接管内，并且具有位于液体表面下方的上部开口端，并且不到冷凝器的冷凝的冷却剂流入储存器的点和相关联的块内的下部开口。

公开(公告)号：US20240355705A1

公开(公告)日：2024-10-24

申请号：US18389496

申请日：2023-11-14

申请人： Hyundai Motor Company ,  Kia Corporation

发明人： Tae Hwa KIM

IPC分类号： H01L23/46

CPC分类号： H01L23/46 ,  H01L24/32 ,  H01L2224/32225

摘要： A power module includes a first board including an insulation layer, a first metal layer disposed on a first side of the insulation layer, and a second metal layer disposed on a second side of the insulation layer opposed to the first side of the insulation layer, a semiconductor chip disposed on the first metal layer, a heat dissipation plate connected to the second metal layer in a first direction, a housing connected to the heat dissipation plate to form an integral cooling channel therein, and a connecting body made of a clad metal in which a first material, which is connected to the heat dissipation plate and is disposed to face an inside of the cooling channel, and a second material, which is connected to the housing and is different from the first material, overlap each other in the first direction.