Abstract:
A thermally conductive member is placed adjacent a microelectronic die with a thermal interface material between the microelectronic die and a wetting layer formed on a surface of the thermally conductive member. The thermal interface material is heated to cause reflow thereof. The first portion of the thermal interface material is directed by the wetting layer into a first cavity formed in the thermally conductive member. The thermal interface material is then allowed to cool and solidify.
Abstract:
A cold welded hermetic micro or nano package sealed in an inert atmosphere with optional force maintenence means for ensuring permanent closure. A package cap 410 coated with precursor weld material is sealed to a package base 405 containing integral device 445 then cold welded with an external force mechanism to compress and flow cold seal preform material 435 creating a hermetic peripheral seal in an inert or vacuum atmosphere. Arrays of devices can be sealed with individual caps or arrays of caps which are interconnected.
Abstract:
A method of fabricating an apparatus including a sealed cavity and an apparatus embodying the method is disclosed. To fabricate the apparatus, a device chip including a substrate and at least one circuit element on the substrate is fabricated. Also, a cap is fabricated. The cap is attached to the device chip using single phase metal alloy to achieve sealed cavity over the circuit element. The single phase metal alloy allows the cap to be diffusion bonded to the device chip at a higher diffusivity thus allowing diffusion at a lower temperature, lower pressure, shorter period, or a combination of these.
Abstract:
A wafer-level package comprises: a first substrate; an electric element provided on the first substrate; a second substrate; an internal electrode pad; a well; and an external electrode pad. The second substrate is opposed to the first substrate with a predetermined gap therebetween. The electric element is provided between the first and second substrates. The internal electrode pad extends onto a first surface of one of the first and the second substrates. The inner electrode pad is connected to the electric element. The well penetrates the one of the first and the second substrates to the internal electrode. The external electrode pad is provided on a second surface of the one of the first and the second substrates and extends onto an inner wall of the well and being connected with the internal electrode pad.
Abstract:
A semiconductor package includes a chip carrier to receive a semiconductor with a dimension generally greater than 22 mm. The chip carrier has a first coefficient of thermal expansion that is larger than the coefficient of thermal expansion of the semiconductor. A heat spreader having parallel channels on opposite sides is attached to the chip carrier along the channels. The heat spreader has a second coefficient of thermal expansion that is smaller than or equal to the coefficient of thermal expansion of the chip carrier. The interplay between the heat spreader and the chip carrier can effectively reduce package warpage and maintain coplanarity within the specification.
Abstract:
An integrated heat spreader is presented. The heat spreader is constructed and arranged to be adhesively affixed, with a sealant, to at least a portion of a component, such as a substrate. The heat spreader includes a body portion, a lip portion substantially vertically oriented and integrally formed with the body portion, and a step portion integrally formed with the lip portion. As such, adhesion of the heat spreader to the sealant is increased, and failure due to shear stresses at the heat spreader bonding surface is prevented.
Abstract:
In a method and a device for sealing a ceramic package of a SAW (Surface Acoustic Wave) filter, when making a ceramic package of an environmentally sensitive SAW filter such as a SAW duplexer filter or a SAW filter, a first sealing is carried out between a ceramic main body and a metal case so as to protect the chip component, and then, a second sealing is carried out also between the metal case and the ceramic main body again, so that the shielding effect against external electromagnetic fields would be superior, and so that costs are reduced and so that a workability improvement can be realized, and so that the sealing can be made more secure. The first sealing is carried out on a step that is formed on the top of the ceramic main body to bond the metal case thereupon. The second sealing is carried out on the top of the ceramic main body to bond the metal case on the ceramic main body.
Abstract:
An integrated heat spreader is presented. The heat spreader is constructed and arranged to be adhesively affixed, with a sealant, to at least a portion of a component, such as a substrate. The heat spreader includes a body portion, a lip portion substantially vertically oriented and integrally formed with the body portion, and a step portion integrally formed with the lip portion. As such, adhesion of the heat spreader to the sealant is increased, and failure due to shear stresses at the heat spreader bonding surface is prevented.
Abstract:
A method and a device for sealing a ceramic package of a SAW (Surface Acoustic Wave) filter are disclosed, in which when making a ceramic package of an environmentally sensitive SAW filter such as a SAW duplexer filter or a SAW filter, a first sealing is carried out between a ceramic main body and a metal case so as to protect the chip component, and then, a second sealing is carried out also between the metal case and the ceramic main body again, so that the shielding effect against external electromagnetic fields would be superior, that a cost curtail and a workability improvement can be realized, and that the sealing can be made sure. The first sealing is carried out on a step which is formed on the top of the ceramic main body to bond the metal case thereupon. The second sealing is carried out on the top of the ceramic main body to bond the metal case on the ceramic main body.
Abstract:
A semiconductor package structure that includes placing self-adjusting stand-offs between the substrate and sealband of the cap, such that the gap between the cap and the chip can be controlled, thereby improving the thermal and fatigue performance of the overall package. The height of the stand-off is varied by controlling the application (i.e., the temperature and the timing) of the heat that is used by the soldering process normally used in the generation of solder joints. The control of the soldering procedure is calibrated to optimize the amount of the stand-off which is dissolved, melted and spalled until the optimum height of the stand-off is reached.