公开(公告)号：US20240047238A1

公开(公告)日：2024-02-08

申请号：US18381261

申请日：2023-10-18

Applicant: Applied Materials, Inc.

Inventor： Wei LU ,  Jimin ZHANG ,  Jianshe TANG ,  Brian J. BROWN

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/67051 ,  H01L21/02087 ,  H01L21/68721 ,  H01L21/67248

Abstract: The present disclosure relates to load cups that include an annular substrate station configured to receive a substrate. The annular substrate station surrounds a nebulizer located within the load cup. The nebulizer includes a set of energized fluid nozzles disposed on an upper surface of the nebulizer adjacent to an interface between the annular substrate station and the nebulizer. The set of energized fluid nozzles are configured to release energized fluid at an upward angle relative to the upper surface.

公开(公告)号：US11817310B2

公开(公告)日：2023-11-14

申请号：US17295739

申请日：2019-10-21

Applicant: CENTRAL GLASS COMPANY, LIMITED

Inventor： Yuki Fukui ,  Yuzo Okumura ,  Yoshiharu Terui ,  Soichi Kumon

IPC: H01L21/02 ,  C07F7/18 ,  C07F7/08 ,  C11D7/08 ,  C11D7/26

CPC classification number: H01L21/02057 ,  C07F7/0812 ,  C07F7/188 ,  C11D7/08 ,  C11D7/261 ,  H01L21/02087 ,  H01L21/02334

Abstract: A bevel portion treatment agent composition of the present invention is a bevel portion treatment agent composition containing a silylating agent, which is used for treating a bevel portion of a wafer, in which a surface modification index Y and a surface modification index Z measured by a predetermined procedure have a characteristic of satisfying 0.5≤Y/Z≤1.0.

公开(公告)号：US20190237322A1

公开(公告)日：2019-08-01

申请号：US16257174

申请日：2019-01-25

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Manabu OKUTANI ,  Hiroshi ABE

IPC: H01L21/02 ,  H01L21/67 ,  B08B3/10 ,  H01L21/687

CPC classification number: H01L21/02057 ,  B08B3/10 ,  H01L21/02054 ,  H01L21/02087 ,  H01L21/67051 ,  H01L21/6875

Abstract: A substrate processing method includes a liquid film forming step of forming a liquid film of the processing liquid on the upper surface of the substrate; a liquid filling heating step of supplying a heating medium to a space between a heater unit and the substrate to thereby fill the space with the heating medium, and heating the heating medium by the heater unit, an opening defining step of defining an opening in the central region of the liquid film in a state where the substrate is heated in the liquid filling heating step such that the temperature of the substrate is the boiling point of the processing liquid or higher, and an opening enlarging step of enlarging the opening while rotating the base to thereby rotate the substrate. The liquid filling heating step is executed in parallel with the opening enlarging step at least during part of a period of the opening enlarging step.

公开(公告)号：US20180226268A1

公开(公告)日：2018-08-09

申请号：US15697615

申请日：2017-09-07

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takashi Izumi ,  Fumitoshi Ikegaya

IPC: H01L21/3213 ,  H01L21/67 ,  C25D17/00

CPC classification number: H01L21/32134 ,  C25D5/48 ,  C25D17/001 ,  H01L21/02087 ,  H01L21/67023 ,  H01L21/67051

Abstract: A semiconductor manufacturing apparatus according to the present embodiment has a mount unit capable of mounting a substrate. A first supplier supplies a chemical solution onto the substrate. A first protection plate is provided along an outer circumference of the substrate, to receive the chemical solution splashing from the substrate. A second supplier is provided above the first protection plate, to supply a cleaning solution to an inner surface of the first protection plate.

公开(公告)号：US20180226244A1

公开(公告)日：2018-08-09

申请号：US15744947

申请日：2016-04-21

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Kazuki NAKAMURA

IPC: H01L21/02 ,  H01L21/67 ,  B08B1/04 ,  H01L21/687

CPC classification number: H01L21/02087 ,  B08B1/04 ,  H01L21/02096 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/6715 ,  H01L21/68728 ,  H01L21/68764

Abstract: A brush is moved from a central position to an outer periphery position while the brush is contacted with an upper surface of a substrate being rotated at a first rotational speed. In this way, a flat region of the substrate is scrub-cleansed. Thereafter, the brush is contacted with a bevel region of the substrate being rotated at a second rotational speed lower than the first rotational speed. In this way, the bevel region of the substrate is scrub-cleansed. Thereafter, while the substrate is rotated at a third rotational speed higher than the second rotational speed, the brush is disposed at an overlapping region cleaning position. In this way, an overlapping region of the flat region and the bevel region are scrub-cleansed.

公开(公告)号：US20180211832A1

公开(公告)日：2018-07-26

申请号：US15876283

申请日：2018-01-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takafumi HASIMOTO ,  Masahide TADOKORO ,  Taku NAGAKANE ,  Koji TAKAYANAGI

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  B08B3/08 ,  B08B3/04 ,  G03F7/40

CPC classification number: H01L21/02087 ,  B08B3/041 ,  B08B3/08 ,  G03F7/168 ,  G03F7/40 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68764

Abstract: There is provided a coated film removing apparatus for removing, with a removal liquid, a peripheral portion of a coated film formed by supplying a coating liquid to a surface of a circular substrate, including: a rotary holding part configured to hold the substrate and rotate together with the substrate; a removal liquid nozzle configured to discharge the removal liquid on a peripheral portion of the surface of the substrate held by the rotary holding part so that the removal liquid is oriented toward a downstream side in a rotational direction of the substrate; and a control part configured to output a control signal so as to rotate the substrate at a rotation speed of 2,300 rpm or more when discharging the removal liquid.

公开(公告)号：US09859136B2

公开(公告)日：2018-01-02

申请号：US14447029

申请日：2014-07-30

Applicant: Tokyo Electron Limited

Inventor： Hiromitsu Namba ,  . Fitrianto ,  Yoichi Tokunaga ,  Yoshifumi Amano

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3213

CPC classification number: H01L21/6708 ,  H01L21/02087 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67109 ,  H01L21/6838

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

公开(公告)号：US09786527B2

公开(公告)日：2017-10-10

申请号：US15442833

申请日：2017-02-27

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Nobuyuki Shibayama

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02

CPC classification number: H01L21/6708 ,  H01L21/02035 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/30604 ,  H01L21/32134 ,  H01L21/67028 ,  H01L21/67109 ,  H01L21/68792

Abstract: It is an object to reduce a chemical treating width in a peripheral edge part of a substrate while suppressing deterioration in each of uniformity of the chemical treating width and processing efficiency. In order to achieve the object, a substrate processing device for carrying out a chemical treatment for a substrate using a processing liquid having a reaction rate increased with a rise in temperature includes a substrate holding portion, a rotating portion for rotating the substrate held in the substrate holding portion in a substantially horizontal plane, a heating portion for injecting heating steam to a central part of a lower surface of the substrate to entirely heat the substrate, and a peripheral edge processing portion for supplying the processing liquid from above to a peripheral edge part of the substrate heated by the heating portion, thereby carrying out a chemical treatment for the peripheral edge part.

公开(公告)号：US09721782B2

公开(公告)日：2017-08-01

申请号：US13157122

申请日：2011-06-09

Applicant: Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

Inventor： Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

IPC: B05C11/00 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/67 ,  C23C16/455

CPC classification number: H01L21/02087 ,  C23C16/455 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708

Abstract: A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

公开(公告)号：US20170207080A1

公开(公告)日：2017-07-20

申请号：US15102329

申请日：2014-02-13

Applicant: Mitsubishi Electric Corporation

Inventor： Shoichi KUGA

IPC: H01L21/027 ,  G03F7/16 ,  H01L21/02 ,  H01L21/67 ,  H01L23/544 ,  H01L21/3105

CPC classification number: G03F7/168 ,  G03F7/162 ,  H01L21/0206 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/31133 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67103 ,  H01L21/6715 ,  H01L2223/54493

Abstract: A semiconductor device manufacturing method of the present invention includes a coating step of coating a front surface of a wafer with a material containing a solvent, a volatilization step of volatilizing the solvent by heating the material, and a rinse step of jetting an edge rinse solution for removing the material from a first nozzle to a peripheral portion of the front surface of the wafer while rotating the wafer.