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公开(公告)号：US20200294843A1
公开(公告)日：2020-09-17
申请号：US16889834
申请日：2020-06-02
发明人： Takashi OTA , Manabu OKUTANI , Hiroshi ABE
IPC分类号： H01L21/687 , H01L21/67
摘要： A substrate processing apparatus includes a substrate holding unit which holds and rotates a substrate in a horizontal orientation, a substrate heating unit which has a heating surface which faces the substrate, held by the substrate holding unit, from below and overlaps with an outermost periphery of the substrate in top view, and heats the substrate in a state of contacting a lower surface of the substrate, a transferring unit which transfers the substrate between the substrate holding unit and the substrate heating unit, and a processing fluid supplying unit which supplies a processing fluid toward the substrate held by the substrate holding unit.
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公开(公告)号：US20190091736A1
公开(公告)日：2019-03-28
申请号：US16136317
申请日：2018-09-20
发明人： Manabu OKUTANI , Hiroaki TAKAHASHI , Masayuki OTSUJI , Hiroshi ABE , Chikara MAEDA , Hitoshi NAKAI , Yuta SASAKI
摘要： A substrate processing method includes a processing liquid film forming step of supplying a processing liquid, containing a sublimable substance, to a pattern forming surface of a substrate, to form a processing liquid film on the pattern forming surface, a temperature maintaining step of maintaining a temperature of the processing liquid film, formed on the pattern forming surface, in a temperature range not lower than a melting point of the sublimable substance and lower than a boiling point of the sublimable substance, a film thinning step of thinning the processing liquid film while the temperature of the processing liquid film is in the temperature range, a freezing step of making the processing liquid film, thinned by the film thinning step, freeze on the pattern forming surface after the temperature maintaining step to form a frozen body of the sublimable substance, and a sublimating step of sublimating the frozen body to remove the frozen body from the pattern forming surface.
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公开(公告)号：US20180308715A1
公开(公告)日：2018-10-25
申请号：US16021640
申请日：2018-06-28
IPC分类号： H01L21/67 , H01L21/687 , B08B3/10
CPC分类号： H01L21/67028 , B08B3/10 , H01L21/67103 , H01L21/6715 , H01L21/67253 , H01L21/67288 , H01L21/68742
摘要： In parallel with a substrate heating step, a liquid surface sensor is used to monitor the raising of an IPA liquid film. An organic solvent removing step is started in response to the raising of the IPA liquid film over the upper surface of the substrate. At the end of the organic solvent removing step, a visual sensor is used to determine whether or not IPA droplets remain on the upper surface of the substrate.
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公开(公告)号：US20170338097A1
公开(公告)日：2017-11-23
申请号：US15674262
申请日：2017-08-10
发明人： Manabu OKUTANI
IPC分类号： H01L21/02 , H01L21/67 , B08B3/04 , H01L21/687
CPC分类号： H01L21/0206 , B08B3/04 , H01L21/02068 , H01L21/67051 , H01L21/6708 , H01L21/67109 , H01L21/67115 , H01L21/68792
摘要： The inventive substrate treatment method includes: an organic solvent supplying step of supplying an organic solvent having a smaller surface tension than a rinse liquid to the upper surface of a substrate so that rinse liquid adhering to the upper surface of the substrate is replaced with the organic solvent; a higher temperature maintaining step of maintaining the upper surface of the substrate at a predetermined temperature higher than the boiling point of the organic solvent to thereby form a gas film of the organic solvent on the entire upper surface of the substrate including the gap of the minute pattern and to form a liquid film of the organic solvent on the gas film, the higher temperature maintaining step being performed after the organic solvent supplying step is started; and an organic solvent removing step of removing the organic solvent liquid film from the upper surface of the substrate.
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公开(公告)号：US20200243350A1
公开(公告)日：2020-07-30
申请号：US16727993
申请日：2019-12-27
IPC分类号： H01L21/67
摘要： In substrate processing, by supplying a first processing liquid onto an upper surface 91 of a substrate 9 held in a horizontal state, a liquid film 81 of the first processing liquid which entirely covers the upper surface 91 is formed. Further, by heating the substrate 9, a vapor layer 82 of the first processing liquid is formed between the upper surface 91 and the liquid film 81 of the first processing liquid on the upper surface 91. Then, by supplying a second processing liquid onto the upper surface 91 of the substrate 9, the liquid film 81 of the first processing liquid is removed from the upper surface 91. It is thereby possible to appropriately remove extraneous matters 89 from the upper surface 91 of the substrate 9, which are taken in the liquid film 81 of the first processing liquid as the vapor layer 82 is formed.
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公开(公告)号：US20180087836A1
公开(公告)日：2018-03-29
申请号：US15697670
申请日：2017-09-07
发明人： Naohiko YOSHIHARA , Manabu OKUTANI , Takashi OTA , Hiroshi ABE
摘要： A substrate processing method includes a substrate holding step of horizontally holding a substrate, a substrate rotating step of rotating the substrate held horizontally around a rotational axis along a vertical direction, a liquid-film forming step of forming a liquid film of a first organic solvent that is used to process an upper surface of the substrate on the upper surface of the substrate by supplying the first organic solvent to the upper surface of the substrate held horizontally, a vapor supplying step of supplying a vapor of a second organic solvent to a space between a facing surface of a heater unit that has the facing surface facing a lower surface of the substrate held horizontally and the lower surface of the substrate, a substrate heating step of heating the substrate being in a rotational state by means of the vapor of the second organic solvent in parallel with the substrate rotating step and the liquid-film forming step, and a substrate drying step of, after the substrate heating step, excluding the liquid film of the first organic solvent from the substrate held horizontally and drying the upper surface of the substrate in a state in which the rotation of the substrate is stopped and the substrate is in contact with the heater unit.
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公开(公告)号：US20170287769A1
公开(公告)日：2017-10-05
申请号：US15460875
申请日：2017-03-16
发明人： Takashi OTA , Manabu OKUTANI , Hiroshi ABE
IPC分类号： H01L21/687 , B08B3/08 , H01L21/67 , B08B3/02
摘要： A substrate processing apparatus includes a substrate holding unit which holds and rotates a substrate in a horizontal orientation, a substrate heating unit which has a heating surface which faces the substrate, held by the substrate holding unit, from below and overlaps with an outermost periphery of the substrate in top view, and heats the substrate in a state of contacting a lower surface of the substrate, a transferring unit which transfers the substrate between the substrate holding unit and the substrate heating unit, and a processing fluid supplying unit which supplies a processing fluid toward the substrate held by the substrate holding unit.
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公开(公告)号：US20170282210A1
公开(公告)日：2017-10-05
申请号：US15471405
申请日：2017-03-28
发明人： Manabu OKUTANI , Takashi OTA , Hiroshi ABE , Naohiko YOSHIHARA
摘要： A processing liquid is supplied to an upper surface of a horizontally-held substrate to form a liquid film of the processing liquid that covers an entirety of the substrate upper surface. The substrate is heated to evaporate the processing liquid in contact with the upper surface of the substrate to form a gas phase layer between the upper surface of the substrate and the liquid film of the processing liquid. After the gas phase layer has been formed, a gas is blown onto the liquid film above the substrate to open a hole in the liquid film. The gas is blown onto a region inside the hole in the liquid film to move the liquid film on the gas phase layer. A direction of a gas stream at a substrate outer peripheral portion is changed to remove the liquid film at the substrate outer peripheral portion.
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公开(公告)号：US20150243542A1
公开(公告)日：2015-08-27
申请号：US14632500
申请日：2015-02-26
IPC分类号： H01L21/687 , H01L21/67
CPC分类号： H01L21/68764 , B05C11/08 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/68728 , H01L21/68742
摘要： A substrate processing apparatus includes a substrate heating unit arranged to heat the underside of a substrate while supporting the substrate thereon and an attitude changing unit arranged to cause the substrate heating unit to undergo an attitude change between a horizontal attitude and a tilted attitude. In an organic solvent removing step to be performed following a substrate heating step of heating the substrate, the substrate heating unit undergoes an attitude change to the tilted attitude so that the upper surface of the substrate becomes tilted with respect to the horizontal surface.
摘要翻译： 基板处理装置包括基板加热单元，其被布置成在支撑基板的同时加热基板的下侧，并且布置成使基板加热单元在水平姿态和倾斜姿态之间经历姿态变化的姿态改变单元。 在加热基板的基板加热工序后进行的有机溶剂除去工序中，基板加热单元对倾斜姿态进行姿态改变，使得基板的上表面相对于水平面倾斜。
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公开(公告)号：US20150179431A1
公开(公告)日：2015-06-25
申请号：US14639423
申请日：2015-03-05
CPC分类号： H01L21/02057 , B08B3/08 , F26B1/00 , H01L21/02068 , H01L21/306 , H01L21/3105 , H01L21/321 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H05K3/227
摘要： A hydrophobizing agent vapor is supplied to a substrate and a surface of the substrate including a pattern is hydrophobized. Thereafter, the substrate is dried by vaporizing the hydrophobizing agent. The substrate to be processed is maintained in a state of not contacting water until it is dried after being hydrophobized. Collapse of a pattern formed on the substrate surface is thereby suppressed or prevented.
摘要翻译： 将疏水化剂蒸气供给到基板，并且包括图案的基板的表面被疏水化。 此后，通过蒸发疏水化剂干燥基材。 待处理的基材保持在不接触水的状态，直到其被疏水化后干燥。 由此抑制或防止在基板表面上形成的图案的折叠。
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