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公开(公告)号：US20180308715A1
公开(公告)日：2018-10-25
申请号：US16021640
申请日：2018-06-28
IPC分类号： H01L21/67 , H01L21/687 , B08B3/10
CPC分类号： H01L21/67028 , B08B3/10 , H01L21/67103 , H01L21/6715 , H01L21/67253 , H01L21/67288 , H01L21/68742
摘要： In parallel with a substrate heating step, a liquid surface sensor is used to monitor the raising of an IPA liquid film. An organic solvent removing step is started in response to the raising of the IPA liquid film over the upper surface of the substrate. At the end of the organic solvent removing step, a visual sensor is used to determine whether or not IPA droplets remain on the upper surface of the substrate.
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公开(公告)号：US20180272376A1
公开(公告)日：2018-09-27
申请号：US15896137
申请日：2018-02-14
发明人： Hiroshi ABE , Manabu OKUTANI , Takashi OTA , Naohiko YOSHIHARA
CPC分类号： B05C9/14 , B05C5/02 , B05C11/1039 , B08B3/10 , H01L21/67023 , H01L21/67028 , H01L21/67051 , H01L21/68728 , H01L21/68742
摘要： A substrate treatment apparatus includes: a substrate holding unit; a rotator for rotating the substrate holding unit; a first liquid nozzle for supplying a rinsing liquid; a second liquid nozzle for supplying a low surface tension liquid; a heater ; a lifting mechanism for relatively moving up and down the heater between a contact position allowing the heater to be brought into contact with the lower surface of the substrate and a separation position allowing the heater to be separated from the substrate; a gas nozzle provided in an upper surface of the heater to suck the substrate; a suction pump for sucking an atmosphere above the heater through the gas nozzle; a gas supply source for supplying an inert gas toward above the heater through the gas nozzle; and a controller for selectively performing suction of the atmosphere or supply of the inert gas, through the gas nozzle.
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公开(公告)号：US20170301580A1
公开(公告)日：2017-10-19
申请号：US15642928
申请日：2017-07-06
IPC分类号： H01L21/687 , H01L21/67 , B05C11/08
摘要： A substrate processing apparatus includes a substrate heating unit arranged to heat the underside of a substrate while supporting the substrate thereon and an attitude changing unit arranged to cause the substrate heating unit to undergo an attitude change between a horizontal attitude and a tilted attitude. In an organic solvent removing step to be performed following a substrate heating step of heating the substrate, the substrate heating unit undergoes an attitude change to the tilted attitude so that the upper surface of the substrate becomes tilted with respect to the horizontal surface.
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公开(公告)号：US20200381246A1
公开(公告)日：2020-12-03
申请号：US16886839
申请日：2020-05-29
发明人： Hitoshi NAKAI , Tsutomu OSUKA , Naohiko YOSHIHARA , Yasunori KANEMATSU , Manabu OKUTANI , Kenji AMAHISA , Masayuki HAYASHI
IPC分类号： H01L21/02 , B08B3/08 , H01L21/67 , H01L21/687
摘要： A substrate processing method includes an intermediate processing step of processing the pattern forming surface by the intermediate processing liquid after a chemical liquid processing step, a filler discharging step of discharging a filler after the intermediate processing step, a filler spreading step of spreading the filler, a solidified film forming step of solidifying the filler, a lower position disposing step of making a blocking member be disposed at a lower position prior to start of the chemical liquid processing step, and a blocking member elevating step of starting elevation of the blocking member toward an upper position in a state where the pattern forming surface is covered with the intermediate processing liquid. The chemical liquid is discharged from a central nozzle. Spreading of the filler is started in a state where the blocking member is positioned at the upper position.
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公开(公告)号：US20200035514A1
公开(公告)日：2020-01-30
申请号：US16592146
申请日：2019-10-03
IPC分类号： H01L21/67 , B08B3/10 , H01L21/687
摘要： In parallel with a substrate heating step, a liquid surface sensor is used to monitor the raising of an IPA liquid film. An organic solvent removing step is started in response to the raising of the IPA liquid film over the upper surface of the substrate. At the end of the organic solvent removing step, a visual sensor is used to determine whether or not IPA droplets remain on the upper surface of the substrate.
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公开(公告)号：US20160214148A1
公开(公告)日：2016-07-28
申请号：US15004361
申请日：2016-01-22
CPC分类号： H01L21/02057 , H01L21/67017 , H01L21/67051 , H01L21/6708 , H01L21/68721 , H01L21/68742 , H01L21/6875
摘要： A substrate processing method includes a substrate holding step of holding a substrate in a horizontal orientation by means of a substrate holding unit, a liquid film forming step of supplying a processing liquid to an upper surface of the substrate held by the substrate holding unit to form a liquid film, an upper surface covering step of discharging, above the substrate held by the substrate holding unit, an inert gas radially and parallel to the upper surface of the substrate from a center toward a peripheral edge of the substrate to form an inert gas stream flowing parallel to the upper surface of the substrate and covering the upper surface of the substrate, and a liquid film removing step of discharging an inert gas toward the upper surface of the substrate to remove the liquid film, formed by the liquid film forming step, from the upper surface of the substrate.
摘要翻译： 基板处理方法包括：通过基板保持单元将基板保持在水平取向的基板保持步骤;将所述基板保持单元保持的基板的上表面供给处理液的液膜形成工序，形成 液体膜，上表面覆盖步骤，从基板保持单元保持的基板上方，从基板的中心朝向基板的周缘径向平行于基板的上表面排出惰性气体，以形成惰性气体 流体平行于衬底的上表面并覆盖衬底的上表面;以及液膜去除步骤，将惰性气体朝向衬底的上表面排出以除去由液膜形成步骤形成的液膜 ，从基板的上表面。
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公开(公告)号：US20150270146A1
公开(公告)日：2015-09-24
申请号：US14662294
申请日：2015-03-19
CPC分类号： H01L21/67028 , B08B3/10 , H01L21/67103 , H01L21/6715 , H01L21/67253 , H01L21/67288 , H01L21/68742
摘要： In parallel with a substrate heating step, a liquid surface sensor is used to monitor the raising of an IPA liquid film. An organic solvent removing step is started in response to the raising of the IPA liquid film over the upper surface of the substrate. At the end of the organic solvent removing step, a visual sensor is used to determine whether or not IPA droplets remain on the upper surface of the substrate.
摘要翻译： 与基板加热步骤平行地，使用液面传感器来监测IPA液膜的升高。 响应于IPA液膜在衬底的上表面上的升高而开始有机溶剂去除步骤。 在有机溶剂去除步骤结束时，使用视觉传感器来确定IPA液滴是否保留在基板的上表面上。
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公开(公告)号：US20230307258A1
公开(公告)日：2023-09-28
申请号：US18186643
申请日：2023-03-20
IPC分类号： H01L21/67
CPC分类号： H01L21/67023
摘要： A substrate processing apparatus includes a first tank, a path including a first path, a first heater, a hydrogen peroxide supply path, and a controller. The first path allows sulfuric acid to be supplied therethrough from the first tank to a nozzle. The first heater heats a heating region of the first path. The controller controls ejecting sulfuric acid heated by the first heater and a hydrogen peroxide solution from the nozzle onto a substrate, the sulfuric acid and the hydrogen peroxide solution on the substrate having been mixed, and then ejecting sulfuric acid having a temperature lower than a temperature of the sulfuric acid heated by the first heater and the hydrogen peroxide solution from the nozzle onto the substrate, the sulfuric acid and the hydrogen peroxide solution on the substrate having been mixed.
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公开(公告)号：US20190172703A1
公开(公告)日：2019-06-06
申请号：US16273400
申请日：2019-02-12
IPC分类号： H01L21/02 , H01L21/687 , H01L21/67
摘要： A substrate processing method includes forming a liquid film of a processing liquid covering an entire upper surface of a horizontally-held substrate; heating the substrate to make the processing liquid of the substrate evaporate to form a gas phase layer between the upper surface of the substrate and the processing liquid and maintain the liquid film on the gas phase layer; blowing a gas at a first flow rate onto the liquid film on the substrate to partially remove the processing liquid to open a hole in the liquid film; heating the substrate to spread the hole to an outer periphery of the substrate and move the liquid film on the gas phase layer to remove the processing liquid, constituting the liquid film, off the substrate; and blowing a gas at a second flow rate greater than the first flow rate onto a region of the upper surface of the substrate within the hole after the hole opening step to spread the hole to the outer periphery of the substrate and move the liquid film on the gas phase layer to remove the processing liquid, constituting the liquid film, off the substrate.
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公开(公告)号：US20190063834A1
公开(公告)日：2019-02-28
申请号：US16047633
申请日：2018-07-27
摘要： A substrate drying method for drying a front surface of a substrate having a pattern includes a sublimation-agent-liquid-film placing step of placing a liquid film of a liquid sublimation-agent on the front surface of the substrate, a high vapor-pressure liquid placing step of placing a liquid film of a high vapor-pressure liquid that has vapor pressure higher than the sublimation agent and that does not include water on the liquid film of the sublimation-agent placed on the front surface of the substrate, a vaporizing/cooling step of losing vaporization heat in response to vaporization of the high vapor-pressure liquid, and, cooling the sublimation-agent, and, as a result, solidifying the liquid film of the sublimation-agent, and, forming a sublimation-agent film on the front surface of the substrate, and a sublimating step of sublimating the sublimation-agent film.
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