公开(公告)号：US20160209748A1

公开(公告)日：2016-07-21

申请号：US14963831

申请日：2015-12-09

Applicant: Tokyo Electron Limited

Inventor： Takafumi HASIMOTO ,  Shinichi HATAKEYAMA ,  Naoki SHIBATA

IPC: G03F7/16

CPC classification number: G03F7/16

Abstract: There are provided a liquid processing method, a liquid processing apparatus and a recording medium for liquid processing which can enhance the uniformity of the coating state of a processing liquid on a substrate. A coating unit U1 includes a rotary holder 20 for rotating a wafer W, a nozzle 32 for supplying a processing liquid R onto a surface Wa of the wafer W, and a controller 60 for controlling the position of the nozzle 32 with respect to the wafer W. A liquid processing method includes: starting the supply of the processing liquid R to the surface Wa of the wafer W at an eccentric position at a distance from the center CL1 of rotation of the wafer W, and moving the position on the wafer W to which the processing liquid R is supplied toward the center CL1 of rotation of the wafer W while rotating the wafer W at a first rotational speed ω1; and, after the processing liquid supply position has reached the center CL1 of rotation of the wafer W, rotating the wafer W at a second rotational speed ω2 which is higher than the first rotational speed ω1, thereby allowing the processing liquid R to spread toward the periphery of the wafer W.

Abstract translation: 提供液体处理方法，液体处理装置和用于液体处理的记录介质，其可以增强基板上的处理液体的涂布状态的均匀性。 涂布单元U1包括用于旋转晶片W的旋转保持器20，用于将处理液体R提供到晶片W的表面Wa上的喷嘴32和用于控制喷嘴32相对于晶片的位置的控制器60 液体处理方法包括：在与晶片W的旋转中心CL1相距一定距离的偏心位置处开始向晶片W的表面Wa供应处理液体R，并且移动晶片W上的位置 在以第一转速ω1旋转晶片W的同时，向晶片W的旋转中心CL1供给处理液R; 在处理液供给位置到达晶片W的旋转中心CL1之后，以比第一转速ω1高的第二转速ω2转动晶片W，从而使处理液R朝向 晶圆W.

公开(公告)号：US20180211832A1

公开(公告)日：2018-07-26

申请号：US15876283

申请日：2018-01-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takafumi HASIMOTO ,  Masahide TADOKORO ,  Taku NAGAKANE ,  Koji TAKAYANAGI

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  B08B3/08 ,  B08B3/04 ,  G03F7/40

CPC classification number: H01L21/02087 ,  B08B3/041 ,  B08B3/08 ,  G03F7/168 ,  G03F7/40 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68764

Abstract: There is provided a coated film removing apparatus for removing, with a removal liquid, a peripheral portion of a coated film formed by supplying a coating liquid to a surface of a circular substrate, including: a rotary holding part configured to hold the substrate and rotate together with the substrate; a removal liquid nozzle configured to discharge the removal liquid on a peripheral portion of the surface of the substrate held by the rotary holding part so that the removal liquid is oriented toward a downstream side in a rotational direction of the substrate; and a control part configured to output a control signal so as to rotate the substrate at a rotation speed of 2,300 rpm or more when discharging the removal liquid.

公开(公告)号：US20160167079A1

公开(公告)日：2016-06-16

申请号：US14963802

申请日：2015-12-09

Applicant: Tokyo Electron Limited

Inventor： Takafumi HASIMOTO ,  Shinichi HATAKEYAMA ,  Naoki SHIBATA ,  Kousuke YOSHIHARA ,  Minoru KUBOTA ,  Hiroyuki IDE

IPC: B05C5/00 ,  G05B15/02 ,  H01L21/02 ,  B05C13/02 ,  B05B1/00

CPC classification number: G05B15/02 ,  B05D1/005 ,  B05D3/042 ,  B05D3/0466 ,  B05D3/104 ,  G03F7/162 ,  H01L21/6715

Abstract: There is provided a coating method which can apply a coating solution uniformly onto a substrate surface while reducing the amount of the coating solution supplied. The coating method for applying a coating solution onto a wafer includes the steps of: supplying a solvent for the coating solution onto the wafer to form an annular liquid film of the solvent in a peripheral area of the wafer; supplying the coating solution to the center of the wafer while rotating the wafer at a first rotational speed (time t1-t2); and allowing the coating solution to spread on the wafer by rotating the wafer at a second rotational speed which is higher than the first rotational speed (time t4-t5). The supply of the solvent is continued until just before the coating solution comes into contact with the liquid film of the solvent (time t0-t3).

Abstract translation: 提供了一种涂布方法，其可以在减少涂布溶液的量的同时将涂布溶液均匀地涂布在基材表面上。 将涂布溶液涂布在晶片上的涂布方法包括以下步骤：向晶片供给涂布溶液的溶剂，以在晶片的周边区域形成溶剂的环状液膜; 在第一旋转速度（时间t1-t2）旋转晶片的同时将涂布溶液供应到晶片的中心; 并且通过以高于第一转速（时刻t4-t5）的第二转速旋转晶片，使涂布液在晶片上扩散。 溶剂的供给继续进行，直到涂布液与溶剂的液膜接触（时刻t0-t3）为止。