Solvent for reducing resist consumption and method using solvent for reducing resist consumption
    7.
    发明授权
    Solvent for reducing resist consumption and method using solvent for reducing resist consumption 有权
    降低抗蚀剂消耗的溶剂和使用溶剂降低抗蚀剂消耗的方法

    公开(公告)号:US09482957B1

    公开(公告)日:2016-11-01

    申请号:US14738946

    申请日:2015-06-15

    Applicant: I-Shan Ke

    Inventor: Yu-Hsun Lin

    Abstract: The present disclosure provides a solvent for reducing resist consumption, which includes a first solvent selected from the group consisting of alkylene glycol alkyl ether acetate, alkylene glycol alkyl ether and a combination thereof, and a second solvent having a hydrogen bonding Hansen parameter lower than 5.34 and an evaporation rate (n-BuAc=1) lower than 0.6. A volume ratio of the first solvent to the second solvent is in a range of 0/100 to 90/10. A resist dispense volume for a 300 mm wafer is less than 0.6 cc, or a resist dispense volume for a 450 mm wafer is less than 1.1 cc.

    Abstract translation: 本公开内容提供了用于降低抗蚀剂消耗的溶剂,其包括选自亚烷基二醇烷基醚乙酸酯,亚烷基二醇烷基醚及其组合的第一溶剂和具有低于5.34的氢键Hansen参数的第二溶剂 和蒸发速率(n-BuAc = 1)低于0.6。 第一溶剂与第二溶剂的体积比在0/100〜90/10的范围内。 用于300mm晶片的抗蚀剂分配体积小于0.6cc,或者450mm晶片的抗蚀剂分配体积小于1.1cc。

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