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    Specimen holder and specimen holder movement device
    81.
    发明授权
    Specimen holder and specimen holder movement device 有权
    试样架和试样架移动装置

    公开(公告)号：US08653476B2

    公开(公告)日：2014-02-18

    申请号：US13047018

    申请日：2011-03-14

    Applicant: Hiroya Miyazaki

    Inventor： Hiroya Miyazaki

    IPC: G21K5/08

    CPC classification number: H01J37/20 ,  H01J2237/026 ,  H01J2237/2001 ,  H01J2237/202 ,  H01J2237/204 ,  H01J2237/26 ,  H01J2237/2802

    Abstract: The present disclosure significantly reduces the waiting time from inserting a specimen holder into an electron microscope until high quality data acquisition is possible. Characterizing the present disclosure, it is a specimen holder partly made of low thermal expansion material. The low thermal expansion material can be any of group 4, 5 or 6 in the periodic table of the elements.

    Abstract translation: 本公开显着地减少了将样品架插入电子显微镜直到高质量数据采集成为可能的等待时间。 表征本公开，它是部分由低热膨胀材料制成的试样保持器。 低热膨胀材料可以是元素周期表中的4,5,6族中的任何一种。

    Systems and methods for scanning a beam of charged particles
    82.
    发明授权
    Systems and methods for scanning a beam of charged particles 有权
    用于扫描带电粒子束的系统和方法

    公开(公告)号：US08399851B2

    公开(公告)日：2013-03-19

    申请号：US13028190

    申请日：2011-02-15

    Applicant: John Ruffell

    Inventor： John Ruffell

    IPC: H01J3/18 ,  H01J3/26 ,  H01J3/14 ,  H01J37/256

    CPC classification number: H01L21/68764 ,  H01J37/1474 ,  H01J37/3171 ,  H01J2237/026 ,  H01J2237/049 ,  H01J2237/057 ,  H01J2237/1503 ,  H01J2237/20207 ,  H01J2237/30472 ,  H01L21/68771

    Abstract: Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.

    Abstract translation: 离子注入装置的系统和方法包括用于沿入射束轴产生离子束的离子源。 离子注入装置包括耦合到旋转机构的光束偏转组件，其使射束偏转组件围绕入射光束轴线旋转并偏转离子束。 至少一个晶片保持器保持目标晶片，并且旋转机构操作以将离子束引导至至少一个晶片保持器中的一个，其也旋转以保持恒定的注入角度。

    Particulate prevention in ion implantation
    85.
    发明授权
    Particulate prevention in ion implantation 有权
    离子注入中的颗粒预防

    公开(公告)号：US07547898B2

    公开(公告)日：2009-06-16

    申请号：US11445667

    申请日：2006-06-02

    Applicant: Donald W. Berrian ,  John W. Vanderpot

    Inventor： Donald W. Berrian ,  John W. Vanderpot

    IPC: G21K5/10 ,  H01J37/08

    CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

    Abstract: A system and method for mitigating contamination in an ion implantation system is provided. The system comprises an ion source, a power supply operable to supply power to a filament and mirror electrode of the ion source, a workpiece handling system, and a controller, wherein the ion source is selectively tunable via the controller to provide rapid control of a formation of an ion beam. The controller is operable to selectively rapidly control power to the ion source, therein modulating a power of the ion beam between an implantation power and a minimal power in less than approximately 20 microseconds based, at least in part, to a signal associated with a workpiece position. Control of the ion source therefore mitigates particle contamination in the ion implantation system by minimizing an amount of time at which the ion beam is at the implantation current.

    Abstract translation: 提供了一种减轻离子注入系统污染的系统和方法。 该系统包括离子源，可操作以向离子源的细丝和反射镜电极供电的电源，工件处理系统和控制器，其中离子源可经由控制器选择性地调节以提供快速控制 形成离子束。 控制器可操作以选择性地快速地控制离子源的功率，其中至少部分地基于与工件相关联的信号，在小于约20微秒内在注入功率和最小功率之间调制离子束的功率 位置。 因此，离子源的控制因此通过使离子束处于注入电流的时间量最小化来减轻离子注入系统中的颗粒污染。

    MOVING INTERLEAVED SPUTTER CHAMBER SHIELDS
    86.
    发明申请
    MOVING INTERLEAVED SPUTTER CHAMBER SHIELDS 审中-公开
    移动交互式飞溅室

    公开(公告)号：US20080264340A1

    公开(公告)日：2008-10-30

    申请号：US12169238

    申请日：2008-07-08

    Applicant: Robert Martinson ,  Norman Bourdon ,  Kwok Fai Lai ,  Dhairya Shrivastava ,  Paul Shufflebothan

    Inventor： Robert Martinson ,  Norman Bourdon ,  Kwok Fai Lai ,  Dhairya Shrivastava ,  Paul Shufflebothan

    IPC: C23C16/00

    CPC classification number: C23C14/564 ,  H01J37/32504 ,  H01J37/34 ,  H01J2237/026

    Abstract: A shielding system for a physical vapor deposition chamber having a sputter target above the pedestal. The shielding system comprises a pedestal shield attachable to the pedestal and movable therewith. The pedestal shield surrounds and extends outward from the pedestal toward the chamber side or lower walls. The system also comprises a sidewall shield adapted to extend substantially around and within the chamber sidewalls, and downward from an upper portion thereof. The sidewall shield has a lower end extending inward and disposed adjacent the pedestal shield upper portion when the pedestal is in the raised position. The pedestal shield and sidewall shield cooperate, when the pedestal is in the raised position, to prevent line-of-sight deposition transmission from the sputter target to the side and lower walls of the deposition chamber.

    Abstract translation: 一种用于物理气相沉积室的屏蔽系统，其具有在基座上方的溅射靶。 屏蔽系统包括可附接到基座并与其移动的基座屏蔽。 基座护罩围绕并从基座朝向室侧或下壁向外延伸。 该系统还包括侧壁屏蔽件，其适于在腔室侧壁内部和内部延伸，并且从其上部向下延伸。 侧壁屏蔽件具有向内延伸的下端，并且当基座处于升高位置时邻近基座屏蔽件上部设置。 当基座处于升高位置时，基座屏蔽和侧壁屏蔽配合以防止从溅射靶到沉积室的侧壁和下壁的视线沉积传输。

    OBJECT-PROCESSING APPARATUS CONTROLLING PRODUCTION OF PARTICLES IN ELECTRIC FIELD OR MAGNETIC FIELD
    87.
    发明申请
    OBJECT-PROCESSING APPARATUS CONTROLLING PRODUCTION OF PARTICLES IN ELECTRIC FIELD OR MAGNETIC FIELD 有权
    控制电场或磁场中颗粒生产的对象处理装置

    公开(公告)号：US20080041306A1

    公开(公告)日：2008-02-21

    申请号：US11769919

    申请日：2007-06-28

    Applicant: Yousuke ITAGAKI ,  Natsuko Ito ,  Fumihiko Uesugi

    Inventor： Yousuke ITAGAKI ,  Natsuko Ito ,  Fumihiko Uesugi

    IPC: B05C11/00

    CPC classification number: C23C16/4404 ,  H01J37/09 ,  H01J37/16 ,  H01J37/32467 ,  H01J37/32477 ,  H01J2237/022 ,  H01J2237/026

    Abstract: An apparatus includes a housing defining a chamber in which an electric field is generated, and an internal member provided in the chamber. At least one part of the internal member is formed of a dielectric material. A process is executed in the chamber so that a dielectric deposit is formed on the at least one part of the internal member. An m1(d∈1/dm1) value of the dielectric material and ∈n m2(d∈2/dm2) value of the dielectric deposit are set so that production of particles from the deposit is properly controlled. The term m1 is a mass density of the dielectric material, ∈1 is a permittivity of the dielectric material, m2 is a mass density of the dielectric deposit, and ∈2 is a permittivity of the dielectric deposit.

    Abstract translation: 一种装置包括限定其中产生电场的室的壳体和设置在室中的内部构件。 内部构件的至少一部分由电介质材料形成。 在室中执行处理，使得在内部构件的至少一个部分上形成介电沉积物。 电介质材料的m 1（d∈1 / dm 1）值和∈nm2（d 设置介电沉积物的∈2 2/2 2 N值，以便适当地控制来自沉积物的颗粒的产生。 术语m 1是电介质材料的质量密度，ε1是电介质材料的介电常数，m 2是质量密度 的介电沉积物，ε2是介电沉积物的介电常数。

    Insulator system for a terminal structure of an ion implantation system
    88.
    发明申请
    Insulator system for a terminal structure of an ion implantation system 有权
    用于离子注入系统的端子结构的绝缘体系统

    公开(公告)号：US20070235663A1

    公开(公告)日：2007-10-11

    申请号：US11394824

    申请日：2006-03-31

    Applicant: Russell Low ,  Piortr Lubicki ,  D. Lischer ,  Steve Krause ,  Eric Hermanson ,  Joseph Olson

    Inventor： Russell Low ,  Piortr Lubicki ,  D. Lischer ,  Steve Krause ,  Eric Hermanson ,  Joseph Olson

    IPC: G21G5/00

    CPC classification number: H01J37/16 ,  H01J37/3171 ,  H01J2237/026 ,  H01J2237/038

    Abstract: An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.

    Abstract translation: 离子注入系统包括被配置为提供离子束的离子源，限定空腔的端子结构，至少部分地设置在空腔内的离子源和绝缘体系统。 绝缘体系统被配置为使端子结构电绝缘并且被配置为在靠近端子结构的至少一个外表面的区域中提供大于约72千伏（kV）/英寸的有效介电强度。 还提供了一种用于对离子注入系统的气体箱进行电绝缘的气体箱绝缘体系统。

    Specimen holding device and charged particle beam device
    89.
    发明申请
    Specimen holding device and charged particle beam device 有权
    标本夹持装置和带电粒子束装置

    公开(公告)号：US20070210261A1

    公开(公告)日：2007-09-13

    申请号：US11699066

    申请日：2007-01-29

    Applicant: Susumu Kato

    Inventor： Susumu Kato

    IPC: G21K7/00 ,  G01N21/00 ,  G01N23/00

    CPC classification number: G01N23/04 ,  H01J37/09 ,  H01J37/185 ,  H01J37/20 ,  H01J2237/026 ,  H01J2237/204 ,  H01L21/68742 ,  H01L21/6875

    Abstract: A specimen holding device has a plurality of electrodes, and a moving mechanism for moving upward and downward a part of the plurality of electrodes. Further, the moving mechanism moves the part of the plurality of electrodes downward to evacuate from a path through which a specimen is introduced. Further, the specimen holding device has a positioning member for the specimen so that the specimen is positioned after being mounted.

    Abstract translation: 试样保持装置具有多个电极和用于使多个电极的一部分上下移动的移动机构。 此外，移动机构将多个电极的一部分向下移动，以从被引入样本的路径排出。 此外，试样保持装置具有用于试样的定位构件，使得试样在安装之后定位。

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