知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

223 records (took 0.036 seconds)

    Variable capacitor and switch structures in single crystal piezoelectric MEMS devices using bimorphs
    82.
    发明授权
    Variable capacitor and switch structures in single crystal piezoelectric MEMS devices using bimorphs 有权
    使用双压电晶片的单晶压电MEMS器件中的可变电容器和开关结构

    公开(公告)号：US09466430B2

    公开(公告)日：2016-10-11

    申请号：US14071025

    申请日：2013-11-04

    Applicant: RF Micro Devices, Inc.

    Inventor： Kushal Bhattacharjee

    IPC: H01L41/09 ,  H03H9/125 ,  H03H9/15 ,  H01G5/18 ,  H03H9/02 ,  H03H9/46 ,  H03H9/24 ,  B81B3/00

    CPC classification number: H01G5/18 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2201/0271 ,  B81B2201/032 ,  H03H9/02275 ,  H03H9/02409 ,  H03H9/2405 ,  H03H9/2463 ,  H03H9/462 ,  H03H9/467 ,  H03H2009/241

    Abstract: A micro-electrical-mechanical systems (MEMS) device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with a first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the first surface, such that the second electrode is in contact with a second bimorph layer of the piezoelectric layer.

    Abstract translation: 微电气机械系统（MEMS）装置包括衬底，形成在衬底的第一表面上的一个或多个锚固体和通过一个或多个锚固件悬挂在衬底的第一表面上的压电层。 第一电极可以设置在面向基板的第一表面的压电层的第一表面上，使得第一电极与压电层的第一双压电晶片层接触。 第二电极可以设置在与第一表面相对的压电层的第二表面上，使得第二电极与压电层的第二双晶片层接触。

    MIRROR DRIVE DEVICE AND DRIVING METHOD THEREOF
    84.
    发明申请
    MIRROR DRIVE DEVICE AND DRIVING METHOD THEREOF 有权
    镜子驱动装置及其驱动方法

    公开(公告)号：US20150309307A1

    公开(公告)日：2015-10-29

    申请号：US14330452

    申请日：2014-07-14

    Applicant: FUJIFILM CORPORATION

    Inventor： Takayuki NAONO

    IPC: G02B26/08 ,  H01L41/187 ,  B81B7/00 ,  G02B26/10 ,  B81B7/02

    CPC classification number: G02B26/0858 ,  B81B3/0043 ,  B81B7/008 ,  B81B7/02 ,  B81B2201/032 ,  B81B2201/042 ,  B81B2201/045 ,  B81B2203/04 ,  G02B26/105 ,  H01L41/0933 ,  H01L41/1876

    Abstract: In a mirror drive device, a first and second actuator sections are arranged on both sides of a mirror supporting section that supports a mirror section so as to sandwich the mirror supporting section. Division of an upper and lower electrodes of each of the first and second actuator sections is performed correspondingly to stress distribution of principal stresses in a piezoelectric body in resonant mode vibration, and a piezoelectric body portion corresponding to positions of a first and third upper electrode sections, and a piezoelectric body portion corresponding to positions of a second and fourth upper electrode sections have stresses in opposite directions to each other. Division of the lower electrodes is performed similar to the upper electrodes, and drive voltages having the same phase can be respectively applied to the upper and lower electrode sections of the piezoelectric body portions that are different due to a division arrangement.

    Abstract translation: 在反射镜驱动装置中，第一和第二致动器部分布置在支撑镜部分的镜支撑部分的两侧，以夹持反射镜支撑部分。 对应于谐振模式振动中的压电体的主应力的应力分布进行第一致动器部和第二致动器部中的每一个的上下电极的分割，以及对应于第一和第三上电极部的位置的压电体部 并且对应于第二和第四上部电极部分的位置的压电体部分具有彼此相反方向的应力。 下部电极的分割与上部电极类似地进行，并且可以将相同相位的驱动电压分别施加到由于分割布置而不同的压电体部分的上部和下部电极部分。

    OPTICAL AND INFRARED IMAGING SYSTEM
    85.
    发明申请
    OPTICAL AND INFRARED IMAGING SYSTEM 有权
    光学和红外成像系统

    公开(公告)号：US20150187828A1

    公开(公告)日：2015-07-02

    申请号：US13854834

    申请日：2013-04-01

    Applicant: Semiconductor Components Industries, LLC

    Inventor： Kenneth Edward Salsman

    IPC: H01L27/146 ,  H04N5/33 ,  B81B3/00 ,  G02B13/00

    CPC classification number: B81B3/0029 ,  B81B2201/032 ,  G01J3/0229 ,  G01J3/2823 ,  G06F3/0304 ,  H01L27/14629 ,  H04N5/2258 ,  H04N5/332 ,  H04N9/045

    Abstract: Imaging systems may include an image sensor and a microelectromechanical systems array. The microelectromechanical systems array may be mounted over the image sensor. The system may include an infrared lens that focuses infrared light onto a first surface of the microelectromechanical systems array and a visible light source that illuminates an opposing second surface of the microelectromechanical systems array. The image sensor may capture images of the opposing second surface of the microelectromechanical systems array. The system may include processing circuitry that generates infrared images of a scene using the captured images of the microelectromechanical systems array. Microelectromechanical systems elements in the microelectromechanical systems array may change position or shape in response to infrared light that is absorbed by the microelectromechanical systems elements. Each microelectromechanical systems element may include infrared absorbing material on a metal layer. The system may include optical elements that focus visible light onto the image sensor.

    Abstract translation: 成像系统可以包括图像传感器和微机电系统阵列。 微机电系统阵列可以安装在图像传感器上。 该系统可以包括将红外光聚焦到微机电系统阵列的第一表面上的红外透镜和照亮微机电系统阵列的相对的第二表面的可见光源。 图像传感器可以捕获微机电系统阵列的相对的第二表面的图像。 该系统可以包括利用微机电系统阵列的捕获图像产生场景的红外图像的处理电路。 微机电系统阵列中的微电子机械系统元件可以响应于被微机电系统元件吸收的红外光而改变位置或形状。 每个微机电系统元件可以包括在金属层上的红外吸收材料。 该系统可以包括将可见光聚焦到图像传感器上的光学元件。

    Corrugated membrane MEMS actuator fabrication method
    87.
    发明授权
    Corrugated membrane MEMS actuator fabrication method 有权
    波纹膜MEMS致动器制造方法

    公开(公告)号：US08835195B2

    公开(公告)日：2014-09-16

    申请号：US13552721

    申请日：2012-07-19

    Applicant: Yonglin Xie ,  Weibin Zhang

    Inventor： Yonglin Xie ,  Weibin Zhang

    IPC: H01L21/00

    CPC classification number: B41J2/1601 ,  B41J2/1607 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1645 ,  B81B2201/032 ,  B81B2201/052 ,  B81C1/00158

    Abstract: A MEMS device fabrication method includes providing a substrate and a chamber wall material layer on a first surface of the substrate, the chamber wall material layer including a chamber cavity having a sacrificial material located therein. A mask material is deposited on the chamber wall material layer and the sacrificial material and patterned to form a mask pattern including a plurality of discrete portions. The mask material and some of the sacrificial material are removed to transfer the mask pattern including the plurality of discrete portions to the sacrificial material. A membrane material layer is deposited on the chamber wall material layer and the sacrificial material that includes the transferred mask pattern including the plurality of discrete portions. Some of the substrate and the sacrificial material are removed to release the membrane material layer using at least one process initiated from a second surface of the substrate.

    Abstract translation: MEMS器件制造方法包括在衬底的第一表面上提供衬底和室壁材料层，室壁材料层包括具有位于其中的牺牲材料的腔室腔。 掩模材料沉积在室壁材料层和牺牲材料上并被图案化以形成包括多个离散部分的掩模图案。 去除掩模材料和一些牺牲材料以将包括多个离散部分的掩模图案转移到牺牲材料。 膜材料层沉积在室壁材料层和牺牲材料上，该牺牲材料包括包含多个离散部分的转印掩模图案。 使用从衬底的第二表面引发的至少一种工艺，去除一些衬底和牺牲材料以释放膜材料层。

    Electromechanical transducer device and method of forming a electromechanical transducer device
    88.
    发明授权
    Electromechanical transducer device and method of forming a electromechanical transducer device 有权
    机电换能器装置及形成机电换能装置的方法

    公开(公告)号：US08445978B2

    公开(公告)日：2013-05-21

    申请号：US13128035

    申请日：2009-11-25

    Applicant: Francois Perruchot ,  Emmanuel Defay ,  Patrice Rey ,  Lianjun Liu ,  Sergio Pacheco

    Inventor： Francois Perruchot ,  Emmanuel Defay ,  Patrice Rey ,  Lianjun Liu ,  Sergio Pacheco

    IPC: G01P15/08

    CPC classification number: B81B3/0072 ,  B81B2201/032 ,  H01L41/0933 ,  H01L41/094

    Abstract: A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic. The first and second compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer of the actuating structure such that movement of the movable structure is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device is in an inactive state.

    Abstract translation: 形成在半导体衬底上的微型或纳米机电换能器装置包括可移动结构，其被布置成响应于致动结构的致动而是可移动的。 可移动结构包括机械结构，其包括具有第一热响应特性和第一机械应力响应特性的至少一个机械层，所述致动结构的至少一层，所述至少一层具有与 第一热响应特性和与第一机械应力响应特性不同的第二机械应力响应特性，具有第三热响应特性和第三机械应力特性的第一补偿层，以及具有第四热响应特性的第二补偿层和 第四机械应力响应特性。 第一和第二补偿层布置成补偿由机械结构和致动结构的至少一个层的不同的第一和第二热响应特性产生的热效应，使得可移动结构的移动基本上与 并且调节由所述机械结构和所述致动结构的所述至少一个层的不同的第一和第二应力响应特性产生的应力效应，使得当所述机电换能器装置 处于非活动状态。

    FABRICATION OF ROBUST ELECTROTHERMAL MEMS WITH FAST THERMAL RESPONSE
    89.
    发明申请
    FABRICATION OF ROBUST ELECTROTHERMAL MEMS WITH FAST THERMAL RESPONSE 有权
    制造具有快速热响应的稳定电热MEMS

    公开(公告)号：US20120319226A1

    公开(公告)日：2012-12-20

    申请号：US13311693

    申请日：2011-12-06

    Applicant: Sagnik Pal ,  Huikai Xie

    Inventor： Sagnik Pal ,  Huikai Xie

    IPC: H01L29/66 ,  H01L21/02

    CPC classification number: F03G7/08 ,  B81B3/0024 ,  B81B2201/032 ,  B81B2201/042 ,  H02N10/00

    Abstract: Embodiments of the invention provide robust electrothermal MEMS with fast thermal response. In one embodiment, an electrothermal bimorph actuator is fabricated using aluminum as one bimorph layer and tungsten as the second bimorph layer. The heating element can be the aluminum or the tungsten, or a combination of aluminum and tungsten, thereby providing a resistive heater and reducing deposition steps. Polyimide can be used for thermal isolation of the bimorph actuator and the substrate. For MEMS micromirror designs, the polyimide can also be used for thermal isolation between the bimorph actuator and the micromirror.

    Abstract translation: 本发明的实施例提供了具有快速热响应的稳健的电热MEMS。 在一个实施例中，使用铝作为一个双晶片层和钨作为第二双晶片层制造电热双压电晶片致动器。 加热元件可以是铝或钨，或铝和钨的组合，从而提供电阻加热器并减少沉积步骤。 聚酰亚胺可用于双压电晶片致动器和基板的热隔离。 对于MEMS微镜设计，聚酰亚胺也可用于双压电晶片致动器和微镜之间的热隔离。

Patent Agency Ranking