公开(公告)号：US20240098871A1

公开(公告)日：2024-03-21

申请号：US17949862

申请日：2022-09-21

Applicant: Applied Materials, Inc.

Inventor： Wai-Ming Tam ,  Klaus Becker ,  William Herron Park, JR. ,  Frank Sinclair

IPC: H05H7/22 ,  H05H7/02

CPC classification number: H05H7/22 ,  H05H7/02 ,  H05H2007/025 ,  H05H2007/222

Abstract: An apparatus may include a drift tube assembly having a plurality of drift tubes to conduct an ion beam along a beam propagation direction. The plurality of drift tubes may define a multi-gap configuration corresponding to a plurality of acceleration gaps, wherein at least one powered drift tube of the drift tube assembly is coupled to receive an RF voltage signal. The apparatus may also include a DC electrode assembly that includes a conductor line, arranged within a resonator coil that is coupled to receive a DC voltage signal into the at least one powered drift tube. The DC electrode assembly may also include a DC electrode arrangement, connected to the conductor line and disposed within the at least one powered drift tube.

公开(公告)号：US20230287561A1

公开(公告)日：2023-09-14

申请号：US17694028

申请日：2022-03-14

Applicant: Applied Materials, Inc.

Inventor： Stanislav S. Todorov ,  Robert J. Mitchell ,  Joseph C. Olson ,  Frank Sinclair

IPC: C23C14/48 ,  C23C14/50

CPC classification number: C23C14/48 ,  C23C14/505

Abstract: A system comprising a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on the spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The spinning disk rotates about a central axis. The spinning disk is also translated linearly in a directional perpendicular to the central axis. The spot ion beam strikes the spinning disk at a distance from the central axis, referred to as the radius of impact. The rotation rate and the scan velocity may both vary inversely with the radius of impact.

公开(公告)号：US11631567B2

公开(公告)日：2023-04-18

申请号：US17407714

申请日：2021-08-20

Applicant: Applied Materials, Inc.

Inventor： Bon-Woong Koo ,  Frank Sinclair ,  Alexandre Likhanskii ,  Svetlana Radovanov ,  Alexander Perel ,  Graham Wright ,  Jay T. Scheuer ,  Daniel Tieger ,  You Chia Li ,  Jay Johnson ,  Tseh-Jen Hsieh ,  Ronald Johnson

IPC: H01J27/02 ,  H01J37/317

Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having an opening formed in a front half thereof nearest the extraction aperture, wherein a rear half of the tubular cathode furthest from the extraction aperture is closed.

公开(公告)号：US11587778B2

公开(公告)日：2023-02-21

申请号：US17088443

申请日：2020-11-03

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Joseph C. Olson ,  Frank Sinclair ,  Peter F. Kurunczi

IPC: H01J49/36 ,  H01J49/06 ,  H01J37/317 ,  H01J49/10

Abstract: Provided herein are approaches for performing electrodynamic mass analysis with a radio frequency (RF) biased ion source to reduce ion beam energy spread. In some embodiments, a system may include an ion source including a power supply, the ion source operable to generate a plasma within a chamber housing, and an extraction power assembly including a first power supply and a second power supply electrically coupled with the chamber housing of the ion source, wherein the first power supply and the second power supply are operable to bias the chamber housing of the ion source with a time modulated voltage to extract an ion beam from the ion source. The system may further include an electrodynamic mass analysis (EDMA) assembly operable to receive the ion beam and perform mass analysis on the ion beam.

公开(公告)号：US20230021619A1

公开(公告)日：2023-01-26

申请号：US17382041

申请日：2021-07-21

Applicant: Applied Materials, Inc.

Inventor： Jun Lu ,  Frank Sinclair ,  Shane W. Conley ,  Michael Honan

IPC: H01J37/30 ,  H01J37/317 ,  H01J37/02

Abstract: An aperture diaphragm capable of varying the size of an aperture in two dimensions is disclosed. The aperture diaphragm may be utilized in an ion implantation system, such as between the mass analyzer and the acceleration column. In this way, the aperture diaphragm may be used to control at least one parameter of the ion beam. These parameters may include angular spread in the height direction, angular spread in the width direction, beam current or cross-sectional area. Various embodiments of the aperture diaphragm are shown. In certain embodiments, the size of the aperture in the height and width directions may be independently controlled, while in other embodiments, the ratio between height and width is constant.

公开(公告)号：US20220248523A1

公开(公告)日：2022-08-04

申请号：US17163251

申请日：2021-01-29

Applicant: Applied Materials, Inc.

Inventor： Frank Sinclair ,  Wai-Ming Tam ,  Costel Biloiu ,  William Davis Lee

IPC: H05H9/04 ,  H01J37/317 ,  H05H7/22 ,  H05H7/02

Abstract: An apparatus may include a drift tube assembly, the drift tube assembly defining a triple gap configuration, and arranged to accelerate and transmit an ion beam along abeam path. The apparatus may include a resonator, to output an RF signal to the drift tube assembly, and an RF quadrupole triplet, connected to the drift tube assembly, and arranged circumferentially around the beam path.

公开(公告)号：US20220139691A1

公开(公告)日：2022-05-05

申请号：US17088443

申请日：2020-11-03

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Joseph C. Olson ,  Frank Sinclair ,  Peter F. Kurunczi

IPC: H01J49/36 ,  H01J49/10 ,  H01J49/06

Abstract: Provided herein are approaches for performing electrodynamic mass analysis with a radio frequency (RF) biased ion source to reduce ion beam energy spread. In some embodiments, a system may include an ion source including a power supply, the ion source operable to generate a plasma within a chamber housing, and an extraction power assembly including a first power supply and a second power supply electrically coupled with the chamber housing of the ion source, wherein the first power supply and the second power supply are operable to bias the chamber housing of the ion source with a time modulated voltage to extract an ion beam from the ion source. The system may further include an electrodynamic mass analysis (EDMA) assembly operable to receive the ion beam and perform mass analysis on the ion beam.

公开(公告)号：US20210305011A1

公开(公告)日：2021-09-30

申请号：US16828218

申请日：2020-03-24

Applicant: Applied Materials, Inc.

Inventor： Frank Sinclair ,  Jonathan Gerald England ,  Joseph C. Olson

IPC: H01J37/244 ,  H01J37/20 ,  H01J37/317 ,  H01J37/141

Abstract: A system and method that is capable of measuring the incident angle of an ion beam, especially an ion beam comprising heavier ions, is disclosed. In one embodiment, X-rays, rather than ions, are used to determine the channeling direction. In another embodiment, the workpiece is constructed, at least in part, of a material having a high molecular weight such that heaver ion beams can be measured. Further, in another embodiment, the parameters of the ion beam are measured across an entirety of the beam, allowing components of the ion implantation system to be further tuned to create a more uniform beam.

公开(公告)号：US20210183609A1

公开(公告)日：2021-06-17

申请号：US16714097

申请日：2019-12-13

Applicant: APPLIED Materials, Inc.

Inventor： Alexandre Likhanskii ,  Antonella Cucchetti ,  Eric D. Hermanson ,  Frank Sinclair ,  Jay T. Scheuer ,  Robert C. Lindberg

IPC: H01J37/12 ,  H01J37/24 ,  H01J37/32 ,  H01J37/30 ,  H01L21/425

Abstract: Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.

公开(公告)号：US20210159043A1

公开(公告)日：2021-05-27

申请号：US17167791

申请日：2021-02-04

Applicant: Applied Materials, Inc.

Inventor： Alexandre Likhanskii ,  Frank Sinclair ,  Shengwu Chang

IPC: H01J37/08 ,  H01J37/12 ,  H01J37/147 ,  H01J37/317

Abstract: An apparatus is provided. The apparatus may include a main chamber, an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber; an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween, and an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit tunnel. The electrode assembly may include an upper electrode, disposed on a first side of the beam path, and a plurality of lower electrodes, disposed on a second side of the beam path, the plurality of lower electrodes comprising at least three electrodes.