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    System and method for configuring equipment
    83.
    发明申请
    System and method for configuring equipment 审中-公开
    用于配置设备的系统和方法

    公开(公告)号：US20020059513A1

    公开(公告)日：2002-05-16

    申请号：US10035996

    申请日：2001-11-09

    Applicant: Shipley Company, L.L.C.

    Inventor： Peter Trefonas III

    IPC: G06F009/00

    CPC classification number: H01L22/20 ,  G05B19/41885 ,  Y02P90/26

    Abstract: A system and method is provided for configuring equipment to achieve a desired result and includes a simulation engine for receiving the desired result and outputting at least one parameter setting for operating the equipment to achieve the desired result. Also included is a consumable knowledge base for receiving the at least one parameter setting and outputting a consumable selection for use in the equipment to achieve the desired result.

    Abstract translation: 提供了一种用于配置设备以实现期望结果的系统和方法，并且包括用于接收所需结果并输出用于操作设备以实现期望结果的至少一个参数设置的模拟引擎。 还包括用于接收至少一个参数设置并输出用于设备中的消耗品选择以实现期望结果的消耗品知识库。

    Novel polymers and photoresist compositions comprising electronegative groups
    84.
    发明申请
    Novel polymers and photoresist compositions comprising electronegative groups 审中-公开
    包含电负性基团的新型聚合物和光致抗蚀剂组合物

    公开(公告)号：US20020058199A1

    公开(公告)日：2002-05-16

    申请号：US09948903

    申请日：2001-09-08

    Applicant: Shipley Company, L.L.C.

    Inventor： Anthony Zampini ,  Charles R. Szmanda ,  Sungseo Cho ,  Gary N. Taylor

    IPC: G03F007/038 ,  G03F007/039 ,  G03F007/09 ,  G03F007/26

    CPC classification number: G03F7/0382 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397

    Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 157 nm. Particular polymers and photoresists of the invention include at least one electronegative group that reduces 157 nm absorbance of a wide spectrum of organic groups including aromatic groups such as phenolic moieties.

    Abstract translation: 本发明包括聚合物和光致抗蚀剂组合物，其包含作为树脂粘合剂组分的聚合物。 本发明的光致抗蚀剂包括可以在短波长例如亚200nm，特别是157nm下有效成像的化学放大的正性作用抗蚀剂。 本发明的特定的聚合物和光致抗蚀剂包括至少一个电负性基团，其减少宽范围的有机基团（包括芳香族基团如酚部分）的吸光度的157nm。

    Novel polymers and photoresist compositions for short short wavelength imaging
    86.
    发明申请
    Novel polymers and photoresist compositions for short short wavelength imaging 有权
    用于短短波长成像的新型聚合物和光致抗蚀剂组合物

    公开(公告)号：US20020055061A1

    公开(公告)日：2002-05-09

    申请号：US09948525

    申请日：2001-09-08

    Applicant: Shipley Company, L.L.C.

    Inventor： Gary N. Taylor ,  Robert L. Brainard ,  Shintaro Yamada

    IPC: G03F007/004 ,  G03F007/26

    CPC classification number: G03F7/0392 ,  G03F7/0046

    Abstract: This invention relates to resins and photoresist compositions that comprise such resins. This invention includes new resins that comprise photoacid-labile deblocking groups, wherein the acid-labile moiety is substituted with one or more electron-withdrawing groups. Polymers of the invention are particularly useful as a resin binder component of chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-300 nm and sub-200 nm and preferably about 157 nm. In such short-wavelength imaging applications resins of the invention exhibit decreased absorbance of short wavelength exposure radiation, such as sub-170 nm radiation e.g. 157 nm.

    Abstract translation: 本发明涉及包含这种树脂的树脂和光致抗蚀剂组合物。 本发明包括包含光酸不稳定解封闭基团的新树脂，其中酸不稳定部分被一个或多个吸电子基团取代。 本发明的聚合物特别可用作化学放大的正性作用抗蚀剂的树脂粘合剂组分，其可以在短波长例如亚300nm和亚-200nm，优选约157nm下有效成像。 在这种短波长成像应用中，本发明的树脂表现出短波长曝光辐射的吸光度降低，例如亚170nm辐射。 157nm。

    Novel polymers and photoresist compositions for short wavelength imaging
    87.
    发明申请
    Novel polymers and photoresist compositions for short wavelength imaging 有权
    用于短波长成像的新型聚合物和光致抗蚀剂组合物

    公开(公告)号：US20020051938A1

    公开(公告)日：2002-05-02

    申请号：US09948526

    申请日：2001-09-08

    Applicant: Shipley Company, L.L.C.

    Inventor： Peter Trefonas III ,  Gary N. Taylor ,  Charles R. Szmanda

    IPC: G03F007/038 ,  G03F007/039 ,  G03F007/30

    CPC classification number: G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111

    Abstract: This invention relates to resins and photoresist compositions that comprise such resins. Preferred polymers of the invention comprise adjacent saturated carbon atoms, either integral or pendant to the polymer backbone, that have a substantially gauche conformation. Polymers of the invention are particularly useful as a resin binder component of chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm and preferably about 157 nm. In such short-wavelength imaging applications, polymers of the invention that have a population of dihedral angles of adjacent saturated carbon atoms that are enriched in substantially gauche conformations can provide reduced undesired absorbance of the high energy exposure radiation.

    Abstract translation: 本发明涉及包含这种树脂的树脂和光致抗蚀剂组合物。 本发明优选的聚合物包含相对于聚合物主链的整体或垂饰的饱和碳原子，其具有基本上高的构象。 本发明的聚合物特别可用作化学放大的正性作用抗蚀剂的树脂粘合剂组分，其可以在短波长如200nm以下，优选约157nm下有效成像。 在这样的短波长成像应用中，具有富含基本上高分子构象的相邻饱和碳原子的二面角群体的本发明的聚合物可以提供高能量曝光辐射的不希望的吸光度。

    Photoacid generators and photoresists comprising same
    88.
    发明申请
    Photoacid generators and photoresists comprising same 有权
    含有它的光酸产生剂和光致抗蚀剂

    公开(公告)号：US20020009663A1

    公开(公告)日：2002-01-24

    申请号：US09795661

    申请日：2001-02-27

    Applicant: Shipley Company, L.L.C.

    Inventor： James F. Cameron ,  Gerhard Pohlers

    IPC: G03F007/016 ,  G03F007/038 ,  C07D207/00 ,  G03F007/20

    CPC classification number: G03F7/0392 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/111

    Abstract: New photoacid generator compounds (nullPAGsnull) are provided and photoresist compositions that comprise such compounds. In particular, non-ionic substituted disulfone compounds PAGS are provided, including disulfone PAGs that contain a diazo, substituted methylene or hydrazine moiety interposed between substituted sulfone groups. Also provided are positive- and negative-acting chemically amplified resists that contain such PAGs and that are preferably imaged with sub-300 nm or sub-200 nm radiation such as 248 nm, 193 nm, or 157 nm radiation.

    Abstract translation: 提供新的光致酸发生剂化合物（“PAG”）和包含这些化合物的光致抗蚀剂组合物。 特别地，提供了非离子取代的二砜化合物PAGS，包括在取代的砜基之间含有重氮，取代的亚甲基或肼部分的二砜PAG。 还提供了含有这种PAG的正性和负性化学放大抗蚀剂，并且优选用亚300nm或亚-200nm辐射如248nm，193nm或157nm辐射成像。

    Method of reducing defects
    89.
    发明申请
    Method of reducing defects 有权
    降低缺陷的方法

    公开(公告)号：US20020001780A1

    公开(公告)日：2002-01-03

    申请号：US09794643

    申请日：2001-02-26

    Applicant: Shipley Company, L.L.C.

    Inventor： Joseph F. Lachowski

    IPC: G03F007/42

    CPC classification number: G03F7/40 ,  G03F7/32 ,  G03F7/322 ,  G03F7/38 ,  G03F7/422

    Abstract: Disclosed are methods for the reduction of defects during the manufacture of electronic devices. Also disclosed are electronic devices having reduced numbers of defects.

    Abstract translation: 公开了在电子设备的制造期间减少缺陷的方法。 还公开了具有减少的缺陷数量的电子设备。

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