公开(公告)号：US20020055061A1

公开(公告)日：2002-05-09

申请号：US09948525

申请日：2001-09-08

Applicant: Shipley Company, L.L.C.

Inventor： Gary N. Taylor ,  Robert L. Brainard ,  Shintaro Yamada

IPC: G03F007/004 ,  G03F007/26

CPC classification number: G03F7/0392 ,  G03F7/0046

Abstract: This invention relates to resins and photoresist compositions that comprise such resins. This invention includes new resins that comprise photoacid-labile deblocking groups, wherein the acid-labile moiety is substituted with one or more electron-withdrawing groups. Polymers of the invention are particularly useful as a resin binder component of chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-300 nm and sub-200 nm and preferably about 157 nm. In such short-wavelength imaging applications resins of the invention exhibit decreased absorbance of short wavelength exposure radiation, such as sub-170 nm radiation e.g. 157 nm.

Abstract translation: 本发明涉及包含这种树脂的树脂和光致抗蚀剂组合物。 本发明包括包含光酸不稳定解封闭基团的新树脂，其中酸不稳定部分被一个或多个吸电子基团取代。 本发明的聚合物特别可用作化学放大的正性作用抗蚀剂的树脂粘合剂组分，其可以在短波长例如亚300nm和亚-200nm，优选约157nm下有效成像。 在这种短波长成像应用中，本发明的树脂表现出短波长曝光辐射的吸光度降低，例如亚170nm辐射。 157nm。

公开(公告)号：US20020051932A1

公开(公告)日：2002-05-02

申请号：US09870243

申请日：2001-05-30

Applicant: Shipley Company, L.L.C.

Inventor： Robert L. Brainard ,  Charles R. Szmanda

IPC: G03F007/038 ,  G03F007/20 ,  G03F007/26

CPC classification number: G03F7/0045 ,  G03F7/0392 ,  G03F7/2004 ,  G03F7/2065

Abstract: Photoresists are provided that are useful for imaging with high energy radiation sources, such as EUV, electron beam, ion beam and x-ray radiation. Resists of the invention can exhibit enhanced sensitivity and resolution upon such high energy imaging. In a first aspect, preferred resists of the invention can be characterized in part as having a high concentration of photoacid generator compound(s)relative to other resist components. In a further aspect, chemically-amplified positive-acting photoresists are provided that exhibit enhanced photoacid generation efficiency upon high energy exposures.

Abstract translation: 提供了可用于使用高能量辐射源（例如EUV，电子束，离子束和x射线辐射）进行成像的光刻胶。 本发明的抗体可以在这种高能量成像时显示增强的灵敏度和分辨率。 在第一方面，本发明的优选的抗蚀剂可以部分地表征为相对于其它抗蚀剂组分具有高浓度的光致酸发生剂化合物。 在另一方面，提供了化学放大的正性光致抗蚀剂，其在高能量曝光时表现出增强的光酸产生效率。