公开(公告)号：US07192849B2

公开(公告)日：2007-03-20

申请号：US10713326

申请日：2003-11-14

Applicant: Qhalid Fareed ,  Remigijus Gaska ,  Michael Shur

Inventor： Qhalid Fareed ,  Remigijus Gaska ,  Michael Shur

IPC: H01L21/00

CPC classification number: C23C16/45523 ,  C23C16/303 ,  C30B25/02 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639

Abstract: Nitride-based film is grown using multiple precursor fluxes. Each precursor flux is pulsed one or more times to add a desired element to the nitride-based film at a desired time. The quantity, duration, timing, and/or shape of the pulses is customized for each element to assist in generating a high quality nitride-based film.

Abstract translation: 使用多种前体助熔剂生长氮化物基膜。 每个前体通量被脉冲一次或多次，以在期望的时间向氮化物基膜添加所需的元素。 针对每个元件定制脉冲的数量，持续时间，定时和/或形状，以帮助产生高质量的基于氮化物的膜。

公开(公告)号：US07095056B2

公开(公告)日：2006-08-22

申请号：US11001304

申请日：2004-12-01

Applicant: Pranci{hacek over (s)}kus Vitta ,  Arturas Zukauskas ,  Remigijus Gaska ,  Michael Shur

Inventor： Pranci{hacek over (s)}kus Vitta ,  Arturas Zukauskas ,  Remigijus Gaska ,  Michael Shur

IPC: H01L29/20

CPC classification number: H05B33/0863 ,  F21K9/00 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2924/0002 ,  H05B33/0869 ,  H01L2924/00

Abstract: A white light emitting device and method that generate light by combining light produced by a white light source with light produced by at least one supplemental light emitting diode (LED). The supplemental light can be used to adjust one or more properties of the generated light. Adjustments can be made to the generated light based on feedback.

Abstract translation: 一种白光发射装置和方法，其通过将由白光源产生的光与由至少一个补充发光二极管（LED）产生的光组合而产生光。 补充光可用于调节所产生的光的一个或多个特性。 基于反馈可以对生成的光进行调整。

公开(公告)号：US06943377B2

公开(公告)日：2005-09-13

申请号：US10690760

申请日：2003-10-22

Applicant: Remigijus Gaska ,  Michael S. Shur

Inventor： Remigijus Gaska ,  Michael S. Shur

IPC: H01L33/10 ,  H01L33/38 ,  H01S5/10 ,  H01S5/125 ,  H01S5/187 ,  H01S5/323 ,  H01L27/15

CPC classification number: H01L33/10 ,  H01L33/06 ,  H01L33/387 ,  H01L33/405 ,  H01L2933/0083 ,  H01S5/105 ,  H01S5/125 ,  H01S5/187 ,  H01S5/32341

Abstract: An improved light emitting heterostructure. In particular, a nitride-based light emitting heterostructure is provided that includes a light generating structure and a distributed semiconductor heterostructure Bragg reflector structure formed above the light generating structure. In operation, the light generating structure generates light, a portion of which is reflected by the distributed semiconductor heterostructure Bragg reflector structure, thereby increasing the total amount of light that can be emitted from the heterostructure.

Abstract translation: 改进的发光异质结构。 特别地，提供了一种氮化物基发光异质结构，其包括形成在发光结构上方的发光结构和分布式半导体异质结构布拉格反射器结构。 在操作中，发光结构产生光，其一部分由分布式半导体异质结构布拉格反射器结构反射，从而增加可从异质结构发射的光的总量。

公开(公告)号：US06764888B2

公开(公告)日：2004-07-20

申请号：US09966563

申请日：2001-09-27

Applicant: Muhammad Asif Khan ,  Remigijus Gaska ,  Michael Shur ,  Jinwei Yang

Inventor： Muhammad Asif Khan ,  Remigijus Gaska ,  Michael Shur ,  Jinwei Yang

IPC: H01L21338

CPC classification number: H01L41/314 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/32 ,  H01L41/18 ,  Y10S438/93

Abstract: A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.

Abstract translation: 一种通过使用由AlInGaN构成的四元层来生产氮化物基异质结构器件的方法。 四元层可以与不同厚度和组成的三元层结合使用，其通过使用应变补偿分布来独立地调整极化电荷和带偏移以用于器件结构优化。 可以通过改变In和Al的摩尔分数的轮廓来调节轮廓。

公开(公告)号：US09368580B2

公开(公告)日：2016-06-14

申请号：US13162908

申请日：2011-06-17

Applicant: Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

Inventor： Maxim S. Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur

IPC: H01L29/06 ,  H01L29/12 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/20 ,  H01L29/201 ,  H01L33/04 ,  H01L33/32 ,  H01S5/20 ,  H01S5/32 ,  H01S5/343

CPC classification number: H01L29/122 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/04 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3216 ,  H01S5/34333

Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

公开(公告)号：US09142741B2

公开(公告)日：2015-09-22

申请号：US13517711

申请日：2012-06-14

Applicant: Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/00 ,  H01L33/60 ,  H01L33/20 ,  H01L33/22 ,  F21V5/00

CPC classification number: H01L33/60 ,  F21V5/002 ,  H01L33/0045 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L2933/0083 ,  Y10T29/49

Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.

Abstract translation: 提供了用于改善辐射通过界面的传播的异型表面。 成形表面包括一组大的粗糙度部件，其提供成型表面的第一变化，其特征标度比辐射的目标波长大大大大约一个数量级。 成形表面还包括一​​组小的粗糙度部件，叠加在该组粗糙度较大的部件上，并提供具有辐射目标波长级的特征刻度的成型表面的第二变型。

公开(公告)号：US08981403B2

公开(公告)日：2015-03-17

申请号：US13605007

申请日：2012-09-06

Applicant: Maxim S Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

Inventor： Maxim S Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/00 ,  H01L21/02 ,  H01L33/22

CPC classification number: H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/22 ,  H01L2224/16225 ,  Y02W10/37

Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns.

Abstract translation: 提供了用于改善半导体层的生长的图案化表面，例如III族氮化物基半导体层。 图案化表面可以包括一组基本平坦的顶表面和多个开口。 每个基本上平坦的顶表面可以具有小于约0.5纳米的均方根粗糙度，并且开口可以具有在约0.1微米和5微米之间的特征尺寸。

公开(公告)号：US08980178B2

公开(公告)日：2015-03-17

申请号：US12783720

申请日：2010-05-20

Applicant: Remigijus Gaska ,  Michael Shur

Inventor： Remigijus Gaska ,  Michael Shur

IPC: G01N21/00 ,  G01N31/00 ,  G01N33/00 ,  C02F1/32 ,  A61L2/10 ,  B01D46/00 ,  B01D46/10 ,  A61L2/00 ,  C02F1/30 ,  A61L9/20 ,  C02F1/50 ,  C02F1/72

CPC classification number: C02F1/325 ,  A61L2/10 ,  A61L9/20 ,  B01D46/0043 ,  B01D46/10 ,  B01D2259/804 ,  B01D2273/30 ,  C02F1/30 ,  C02F1/32 ,  C02F1/50 ,  C02F1/722 ,  C02F2201/003 ,  C02F2201/009 ,  C02F2201/322 ,  C02F2201/3222 ,  C02F2201/3226 ,  C02F2201/326 ,  C02F2209/006 ,  C02F2209/40 ,  C02F2301/08 ,  C02F2303/04 ,  Y02A20/212

Abstract: A system for treating a medium, such as water, with ultraviolet light is provided. The system can include an ultraviolet treatment chamber that is shaped to reduce reflections of the ultraviolet light within the ultraviolet treatment chamber and/or improve absorption of the ultraviolet light by the medium. Furthermore, the system can add an agent to the medium within the treatment chamber to further treat one or more contaminants that may be present within the medium. Still further, additional treatment, such as filtering the medium with a permeable material can be implemented within the treatment system.

Abstract translation: 提供了一种用紫外光处理介质如水的系统。 该系统可以包括紫外线处理室，其被成形为减少紫外线处理室内的紫外线的反射和/或改善介质对紫外线的吸收。 此外，该系统可以将一种试剂添加到处理室内的介质中以进一步处理可能存在于介质中的一种或多种污染物。 此外，可以在处理系统内实施额外的处理，例如用可渗透材料过滤介质。

公开(公告)号：US08525226B2

公开(公告)日：2013-09-03

申请号：US12474553

申请日：2009-05-29

Applicant: Grigory Simin ,  Michael Shur ,  Remigijus Gaska

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/802 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/517 ,  H01L29/7787

Abstract: A field effect transistor having a channel, a gate, and a structure for decreasing a gate-to-channel capacitance of the transistor as an operating frequency of the transistor increases. The structure can comprise, for example, a barrier disposed between the gate and the channel, which has a dielectric permittivity and/or a conductivity that varies with an operating frequency of the transistor. In an embodiment, the barrier comprises a layer of conducting material, such as conducting polymer, conducting semiconductor, conducting semi-metal, amorphous silicon, polycrystalline silicon, and/or the like.

Abstract translation: 具有沟道，栅极和用于降低晶体管的栅极至沟道电容的结构的场效应晶体管作为晶体管的工作频率增加。 该结构可以包括例如设置在栅极和沟道之间的屏障，其具有随着晶体管的工作频率而变化的介电常数和/或电导率。 在一个实施例中，阻挡层包括导电材料层，例如导电聚合物，导电半导体，导电半金属，非晶硅，多晶硅和/或类似物质。

公开(公告)号：US20130056770A1

公开(公告)日：2013-03-07

申请号：US13605007

申请日：2012-09-06

Applicant: Maxim S. Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

Inventor： Maxim S. Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/22 ,  H01L21/205 ,  G06F17/50

CPC classification number: H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/22 ,  H01L2224/16225 ,  Y02W10/37

Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns.

Abstract translation: 提供了用于改善半导体层的生长的图案化表面，例如III族氮化物基半导体层。 图案化表面可以包括一组基本平坦的顶表面和多个开口。 每个基本上平坦的顶表面可以具有小于约0.5纳米的均方根粗糙度，并且开口可以具有在约0.1微米和5微米之间的特征尺寸。