公开(公告)号：US06878593B2

公开(公告)日：2005-04-12

申请号：US10647714

申请日：2003-08-25

Applicant: Muhammad Asif Khan ,  Remigijus Gaska ,  Michael Shur ,  Jinwei Yang

Inventor： Muhammad Asif Khan ,  Remigijus Gaska ,  Michael Shur ,  Jinwei Yang

IPC: H01L29/20 ,  H01L29/778 ,  H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/78

Abstract: A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.

Abstract translation: 一种用于生产氮化物基异质结构器件的方法和结构，其具有与其它常规器件相当的具有相当低的反向漏电流和性能特性 该方法和结构包括在衬底上放置一层或多层基于氮化物的化合物。 另外，包含二氧化硅的电介质层置于氮化物基层之上。

公开(公告)号：US07348606B2

公开(公告)日：2008-03-25

申请号：US10768944

申请日：2004-01-30

Applicant: Muhammad Asif Khan ,  Remigijus Gaska ,  Michael Shur ,  Jinwei Yang

Inventor： Muhammad Asif Khan ,  Remigijus Gaska ,  Michael Shur ,  Jinwei Yang

IPC: H01L21/00

CPC classification number: H01L41/314 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/32 ,  H01L41/18 ,  Y10S438/93

Abstract: A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.

Abstract translation: 一种通过使用由AlInGaN构成的四元层来生产氮化物基异质结构器件的方法。 四元层可以与不同厚度和组成的三元层结合使用，其通过使用应变补偿分布来独立地调整极化电荷和带偏移以用于器件结构优化。 可以通过改变In和Al的摩尔分数的轮廓来调节轮廓。

公开(公告)号：US06764888B2

公开(公告)日：2004-07-20

申请号：US09966563

申请日：2001-09-27

Applicant: Muhammad Asif Khan ,  Remigijus Gaska ,  Michael Shur ,  Jinwei Yang

Inventor： Muhammad Asif Khan ,  Remigijus Gaska ,  Michael Shur ,  Jinwei Yang

IPC: H01L21338

CPC classification number: H01L41/314 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/32 ,  H01L41/18 ,  Y10S438/93

Abstract: A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.

Abstract translation: 一种通过使用由AlInGaN构成的四元层来生产氮化物基异质结构器件的方法。 四元层可以与不同厚度和组成的三元层结合使用，其通过使用应变补偿分布来独立地调整极化电荷和带偏移以用于器件结构优化。 可以通过改变In和Al的摩尔分数的轮廓来调节轮廓。

公开(公告)号：US06690042B2

公开(公告)日：2004-02-10

申请号：US09966559

申请日：2001-09-27

Applicant: Muhammad Asif Khan ,  Remigilus Gaska ,  Michael Shur ,  Jinwci Yang

Inventor： Muhammad Asif Khan ,  Remigilus Gaska ,  Michael Shur ,  Jinwci Yang

IPC: H01L31072

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/78

Abstract: A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.