公开(公告)号：US06555439B1

公开(公告)日：2003-04-29

申请号：US10021551

申请日：2001-12-18

Applicant: Qi Xiang ,  Robert B. Ogle ,  Eric N. Paton ,  Cyrus E. Tabery ,  Bin Yu

Inventor： Qi Xiang ,  Robert B. Ogle ,  Eric N. Paton ,  Cyrus E. Tabery ,  Bin Yu

IPC: H01L2100

CPC classification number: H01L21/324 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/28176 ,  H01L21/28211 ,  H01L29/6659

Abstract: A method of manufacturing a MOSFET semiconductor device includes forming a gate electrode over a substrate and a gate oxide between the gate electrode and the substrate, forming source/drain extensions in the substrate, and forming first and second sidewall spacers. Dopants are then implanted within the substrate to form amorphitized source/drain regions in the substrate adjacent to the sidewalls spacers. The amorphitized source/drain regions are partially recrystallized, and laser thermal annealing activates the source/drain regions. The source/drain extensions and sidewall spacers are adjacent to the gate electrode. The source/drain extensions can have a depth of about 50 to 300 angstroms, and the source/drain regions can have a depth of about 400 to 1000 angstroms. Also, the recrystallization reduces the amorphitized source/drain regions by a depth of about 20 to 100 angstroms. A semiconductor device is also disclosed.

Abstract translation: 一种制造MOSFET半导体器件的方法包括在衬底上形成栅电极和在栅电极和衬底之间形成栅极氧化物，在衬底中形成源极/漏极延伸部分，以及形成第一和第二侧壁间隔物。 然后将掺杂剂注入到衬底内以在邻近侧壁间隔物的衬底中形成非晶化的源极/漏极区。 非晶化的源极/漏极区域被部分再结晶，并且激光热退火激活源极/漏极区域。 源极/漏极延伸部和侧壁间隔物与栅电极相邻。 源极/漏极延伸部可以具有约50至300埃的深度，并且源极/漏极区域可以具有约400至1000埃的深度。 此外，重结晶将非晶化的源/漏区减少约20至100埃的深度。 还公开了一种半导体器件。

公开(公告)号：US06551888B1

公开(公告)日：2003-04-22

申请号：US10020496

申请日：2001-12-18

Applicant: Cyrus E. Tabery ,  Eric N. Paton ,  Bin Yu ,  Qi Xiang ,  Robert B. Ogle

Inventor： Cyrus E. Tabery ,  Eric N. Paton ,  Bin Yu ,  Qi Xiang ,  Robert B. Ogle

IPC: H01L21336

CPC classification number: H01L21/268 ,  H01L21/2026 ,  H01L29/6659

Abstract: A method of manufacturing a semiconductor device includes forming a gate electrode over a substrate, introducing dopants into the substrate, forming a tuning layer over at least a portion of the substrate, and activating the dopants using laser thermal annealing. The tuning layer causes an increase or a decrease in the amount of fluence absorbed by the portion of substrate below the tuning layer in comparison to an amount of fluence absorbed by a portion of substrate not covered by the tuning layer. Additional tuning layers can also be formed over the substrate.

Abstract translation: 一种制造半导体器件的方法包括在衬底上形成栅电极，将掺杂剂引入衬底中，在衬底的至少一部分上形成调谐层，并使用激光热退火激活掺杂剂。 与由调谐层未被覆盖的基板的一部分吸收的注量相比，调谐层引起由调谐层下方的基板部分吸收的注量的增加或减少。 也可以在衬底上形成附加的调谐层。

公开(公告)号：US06551886B1

公开(公告)日：2003-04-22

申请号：US09844637

申请日：2001-04-27

Applicant: Bin Yu

Inventor： Bin Yu

IPC: H01L21336

CPC classification number: H01L29/66772 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66545

Abstract: An ultra-thin body SOI MOSFET transistor and fabrication method are described which provide extended silicide depth in a gate-last process. The method utilizes the fabrication of a dummy gate, comprising insulation, which is replaced with an insulated gate after implantation, annealing, and the formation of silicide so that diffusion effects are reduced. By way of example, dummy gate stacks are created having insulating upper segments. Silicon is deposited on the wafer and planarized to expose the insulating segment. The junction is formed by implantation followed by annealing to recrystallize the silicon and to activate the junction. Silicide is then formed, to a depth which can exceed the thickness of the silicon within the SOI wafer, on the upper portion of the silicon layer. The segment of insulation is then removed and a gate is formed with a gate electrode insulated by high-k dielectric.

Abstract translation: 描述了一种超薄体SOI MOSFET晶体管和制造方法，其在栅极最后工艺中提供延长的硅化物深度。 该方法利用伪栅的制造，包括绝缘，其在植入，退火和硅化物的形成之后被绝缘栅取代，使得扩散效应降低。 作为示例，制造具有绝缘上段的虚拟栅极堆叠。 硅沉积在晶片上并平坦化以暴露绝缘段。 通过注入形成结，然后进行退火以使硅重结晶并激活连接。 然后，在硅层的上部形成硅化物，其深度可以超过SOI晶片内的硅的厚度。 然后去除绝缘区段，并且形成具有由高k电介质绝缘的栅电极的栅极。

公开(公告)号：US06531710B1

公开(公告)日：2003-03-11

申请号：US09853342

申请日：2001-05-10

Applicant: Bin Yu

Inventor： Bin Yu

IPC: H01L2904

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2026 ,  H01L21/76264 ,  H01L21/76283

Abstract: An ULSI MOSFET formed using silicon on insulator (SOI) principles includes masking regions of an amorphous silicon film on a substrate and exposing intended active regions. Laser energy is directed against the intended active regions to anneal these regions without annealing the masked regions, thereby increasing production throughput and decreasing defect density.

Abstract translation: 使用绝缘体上硅（SOI）原理形成的ULSI MOSFET包括在衬底上的非晶硅膜的掩蔽区域并暴露预期的有源区域。 激光能量针对预期的有源区域进行退火以退火这些区域而不对掩蔽区域进行退火，由此增加生产量并降低缺陷密度。

公开(公告)号：US06528851B1

公开(公告)日：2003-03-04

申请号：US09871191

申请日：2001-05-31

Applicant: Bin Yu

Inventor： Bin Yu

IPC: H01L2701

CPC classification number: H01L29/66772 ,  H01L29/458 ,  H01L29/78612 ,  H01L29/78621

Abstract: A semiconductor-on-insulator (SOI) transistor is disclosed. The SOI transistor includes a source region, a drain region and a body region disposed therebetween, the body region including a gate disposed thereon, the source and drain regions including respective silicide regions. The body region includes a region of recombination centers formed by atom implantation, wherein atoms forming the region of recombination centers are implanted at an angle from opposite sides of the gate in a direction towards the body region, with the gate and source and drain silicide regions acting as an implant blocking mask, such that the region of recombination centers is disposed between a source/body junction and a drain/body junction. Also disclosed is a method of fabricating the SOI transistor.

Abstract translation: 公开了一种绝缘体上半导体（SOI）晶体管。 SOI晶体管包括源极区域，漏极区域和设置在其间的体区域，所述体区域包括设置在其上的栅极，源区域和漏极区域包括各自的硅化物区域。 身体区域包括通过原子注入形成的复合中心区域，其中形成复合中心区域的原子沿着朝向身体区域的方向从栅极的相对侧以一定角度注入，栅极和源极和漏极硅化物区域 充当植入物阻挡掩模，使得复合中心区域设置在源极/主体结与漏极/主体结之间。 还公开了制造SOI晶体管的方法。

公开(公告)号：US06521501B1

公开(公告)日：2003-02-18

申请号：US09310170

申请日：1999-05-11

Applicant: Jeff Erhardt ,  Bin Yu ,  G. Jonathan Kluth

Inventor： Jeff Erhardt ,  Bin Yu ,  G. Jonathan Kluth

IPC: H01L21336

CPC classification number: H01L29/6653 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324 ,  H01L29/6659

Abstract: A method of forming a CMOS structure, the method including the acts of: forming a gate structure over a substrate layer; forming a silicide layer over the substrate layer; forming shallow source/drain areas in the substrate layer; forming an oxide diffusion barrier layer over the structure; forming a metal absorption layer over the oxide diffusion barrier layer; and melting portions of the substrate layer directly overlying the shallow source/drain areas, thereby transforming the shallow source/drain areas into shallow source/drain regions. The act of melting includes the act of exposing the metal absorption layer to pulsed laser beams.

Abstract translation: 一种形成CMOS结构的方法，所述方法包括以下动作：在衬底层上形成栅极结构; 在衬底层上形成硅化物层; 在衬底层中形成浅的源极/漏极区域; 在所述结构上形成氧化物扩散阻挡层; 在所述氧化物扩散阻挡层上形成金属吸收层; 并且将衬底层的部分直接覆盖在浅源极/漏极区域上，从而将浅的源极/漏极区域变换成浅的源极/漏极区域。 熔化的行为包括将金属吸收层暴露于脉冲激光束的行为。

公开(公告)号：US06518631B1

公开(公告)日：2003-02-11

申请号：US09824418

申请日：2001-04-02

Applicant: William G. En ,  Srinath Krishnan ,  Dong-Hyuk Ju ,  Bin Yu

Inventor： William G. En ,  Srinath Krishnan ,  Dong-Hyuk Ju ,  Bin Yu

IPC: H01L31113

CPC classification number: H01L29/6653 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78621

Abstract: A transistor device formed on a semiconductor-on-insulator (SOI) substrate with a buried oxide (BOX) layer disposed thereon and an active layer disposed on the BOX layer having active regions defined by isolation trenches. The device includes a gate defining a channel interposed between a source and a drain formed within the active region of the SOI substrate. Further, the device includes a plurality of thin silicide layers formed on the source and the drain. Additionally, at least an upper silicide layer of the plurality of thin silicide layers extends beyond a lower silicide layer. Further still, the device includes a plurality of spacers used in the formation of the device. The device further includes a second plurality of thin silicide layers formed on a polysilicon electrode of the gate.

Abstract translation: 一种在绝缘体上半导体（SOI）衬底上形成的埋置氧化物（BOX）层的晶体管器件，以及设置在具有由隔离沟槽限定的有源区域的BOX层上的有源层。 该器件包括限定插入在SOI衬底的有源区域内形成的源极和漏极之间的沟道的栅极。 此外，该器件包括形成在源极和漏极上的多个薄硅化物层。 另外，多个薄硅化物层中的至少一个上硅化物层延伸超过下硅化物层。 此外，该装置还包括用于形成装置的多个间隔物。 该器件还包括形成在栅极的多晶硅电极上的第二多个薄硅化物层。

公开(公告)号：US06504214B1

公开(公告)日：2003-01-07

申请号：US10044246

申请日：2002-01-11

Applicant: Bin Yu ,  Qi Xiang

Inventor： Bin Yu ,  Qi Xiang

IPC: H01L2978

CPC classification number: H01L21/28194 ,  H01L21/2807 ,  H01L29/41783 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66575 ,  H01L29/66628

Abstract: A MOSFET device and method of fabrication. The MOSFET includes a gate having a gate electrode and a gate dielectric formed from a high-K material, the gate dielectric separating the gate electrode and a layer of semiconductor material. A source and a drain each formed by selective in-situ doped epitaxy and located adjacent opposite sides of the gate so as to define a body region from the layer of semiconductor material between the source and the drain and under the gate.

Abstract translation: 一种MOSFET器件及其制造方法。 MOSFET包括具有栅极电极和由高K材料形成的栅极电介质的栅极，栅极电介质分离栅电极和半导体材料层。 源极和漏极各自由选择性原位掺杂外延形成并且位于栅极的相邻相对侧，以便在源极和漏极之间以及在栅极之下限定半导体材料层的主体区域。

公开(公告)号：US06479868B1

公开(公告)日：2002-11-12

申请号：US09845659

申请日：2001-04-30

Applicant: Xilin Judy An ,  Bin Yu ,  Concetta E. Riccobene

Inventor： Xilin Judy An ,  Bin Yu ,  Concetta E. Riccobene

IPC: H01L2701

CPC classification number: H01L29/66772 ,  H01L29/78612 ,  H01L29/78624 ,  H01L29/78684

Abstract: A silicon-on-insulator (SOI) transistor. The SOI transistor includes a germanium implanted source and drain having a body disposed therebetween, and a gate disposed on the body, the germanium being implanted at an angle such that the source has a concentration of germanium at a source/body junction and the gate shields germanium implantation in the drain adjacent a drain/body junction resulting in a graduated drain/body junction. Also disclosed is a method of fabricating the SOI transistor.

Abstract translation: 绝缘体上硅（SOI）晶体管。 SOI晶体管包括锗注入源和漏极，其中设置有一个主体，以及设置在主体上的栅极，以一定角度注入锗，使得源在源极/主体结处具有锗的浓度，栅极屏蔽 在排水管/主体连接处的漏极中进行锗注入，导致刻度的漏极/体结。 还公开了制造SOI晶体管的方法。

公开(公告)号：US06472282B1

公开(公告)日：2002-10-29

申请号：US09639380

申请日：2000-08-15

Applicant: Bin Yu

Inventor： Bin Yu

IPC: H01L21336

CPC classification number: H01L29/6659 ,  H01L21/26513 ,  H01L29/7833

Abstract: A method of manufacturing an integrated circuit may include the steps of forming a deep amorphous region and doping the deep amorphous region. The doping of the deep amorphous region can form source and drain regions with extensions. After doping, the substrate is annealed. The annealing can occur at a low temperature. The deep amorphous region can be formed with a self-amorphizing implant.

Abstract translation: 制造集成电路的方法可以包括形成深非晶区域并掺杂深非晶区域的步骤。 深非晶区域的掺杂可以形成具有延伸的源极和漏极区域。 掺杂后，将基板退火。 退火可以在低温下进行。 深非晶区域可以用自身非晶化植入物形成。