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    AN ILLUMINATION SOURCE AND ASSOCIATED METHOD APPARATUS
    82.
    发明公开
    AN ILLUMINATION SOURCE AND ASSOCIATED METHOD APPARATUS 审中-公开

    公开(公告)号：US20240272516A1

    公开(公告)日：2024-08-15

    申请号：US18570289

    申请日：2022-05-20

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Sjoerd Nicolaas Lambertus DONDERS ,  Petrus Wilhelmus SMORENBURG

    IPC: G02F1/383

    CPC classification number: G02F1/383

    Abstract: An assembly for receiving a pump radiation to interact with a gas medium at an interaction space to generate an emitted radiation. The assembly comprising: an object with a hollow core, wherein the hollow core has an elongated volume through the object, wherein the interaction space is located inside the hollow core, and a heat conductive structure that connects at multiple locations of an outside wall of the object for transferring heat generated at the interaction space away from the object.

    Method and system for determining information about a target structure
    83.
    发明授权
    Method and system for determining information about a target structure 有权

    公开(公告)号：US12061421B2

    公开(公告)日：2024-08-13

    申请号：US17629053

    申请日：2020-07-17

    Applicant: ASML Netherlands B.V.

    Inventor： Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya ,  Keng-Fu Chang ,  Simon Gijsbert Josephus Mathijssen

    IPC: G03F7/00

    CPC classification number: G03F7/70633

    Abstract: Methods and systems for determining information about a target structure are disclosed. In one arrangement, a value of an asymmetry indicator for the target structure is obtained. The value of the asymmetry indicator represents an amount of an overlay independent asymmetry in the target structure. An error in an initial overlay measurement performed on the target structure at a previous time is estimated. The estimation is performed using the obtained value of the asymmetry indicator and a relationship between values of the asymmetry indicator and overlay measurement errors caused at least partially by overlay independent asymmetries. An overlay in the target structure is determined using the initial overlay measurement and the estimated error.

    METHOD FOR GENERATING ASSIST FEATURES USING MACHINE LEARNING MODEL
    87.
    发明公开
    METHOD FOR GENERATING ASSIST FEATURES USING MACHINE LEARNING MODEL 审中-公开

    公开(公告)号：US20240256976A1

    公开(公告)日：2024-08-01

    申请号：US18565759

    申请日：2022-06-10

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jun TAO ,  Yu CAO ,  Christopher Alan SPENCE

    IPC: G06N20/00 ,  G03F1/36

    CPC classification number: G06N20/00 ,  G03F1/36

    Abstract: Described herein is a method of determining assist features for a mask pattern. The method includes obtaining (i) a target pattern comprising a plurality of target features, wherein each of the plurality of target features comprises a plurality of target edges, and (ii) a trained sequence-to-sequence machine leaning (ML) model (e.g., long short term memory, Gated Recurrent Units, etc.) configured to determine sub-resolution assist features (SRAFs) for the target pattern. For a target edge of the plurality of target edges, geometric information (e.g., length, width, distances between features, etc.) of a subset of target features surrounding the target edge is determined. Using the geometric information as input, the ML model generates SRAFs to be placed around the target edge.

    Method, apparatus, and system for wafer grounding
    89.
    发明授权
    Method, apparatus, and system for wafer grounding 有权

    公开(公告)号：US12051562B2

    公开(公告)日：2024-07-30

    申请号：US17753298

    申请日：2020-08-25

    Applicant: ASML Netherlands B.V.

    Inventor： Yixiang Wang ,  Shibing Liu ,  Shanhui Cao ,  Kangsheng Qiu ,  Juying Dou ,  Ying Luo ,  Yinglong Li ,  Qiang Li ,  Ronald Van Der Wilk ,  Jan-Gerard Cornelis Van Der Toorn

    IPC: H01J37/20 ,  H01L21/683

    CPC classification number: H01J37/20 ,  H01L21/6833 ,  H01J2237/0044

    Abstract: Systems and methods for wafer grounding and wafer grounding location adjustment are disclosed. A first method may include receiving a first value of an electric characteristic associated with the wafer being grounded by an electric signal; determining a first control parameter using at least the first value; and controlling a characteristic of the electric signal using the first control parameter and the first value. A second method for adjusting a grounding location for a wafer may include terminating an electric connection between the wafer and at least one grounding pin in contact the wafer; adjusting a relative position between the wafer and the grounding pin; and restoring the electric connection between the grounding pin and the wafer. A third method may include causing a grounding pin to penetrate through a coating on the wafer by impact; and establishing an electrical connection between the grounding pin and the wafer.

    Waveguides and manufacturing methods thereof
    90.
    发明授权
    Waveguides and manufacturing methods thereof 有权

    公开(公告)号：US12050392B2

    公开(公告)日：2024-07-30

    申请号：US18072196

    申请日：2022-11-30

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Gerrit Jacobus Hendrik Brussaard ,  Johannes Richard Karl Kohler

    IPC: G02F1/365 ,  G02F1/35

    CPC classification number: G02F1/365 ,  G02F1/3528

    Abstract: A waveguide including: a first section, the first section configured to generate, by a non-linear optical process, a broadened wavelength spectrum of pulsed radiation provided to an input end of the waveguide; a second section, the second section including an output end of the waveguide, the second section configured to exhibit a larger absolute value of group velocity dispersion than the first section; wherein a length of the second section is configured to reduce a peak intensity of one or more peaks in the broadened wavelength spectrum by at least 20%.

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