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公开(公告)号：US12066758B2
公开(公告)日：2024-08-20
申请号：US17728608
申请日：2022-04-25
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： David Ferdinand Vles , Erik Achilles Abegg , Aage Bendiksen , Derk Servatius Gertruda Brouns , Pradeep K. Govil , Paul Janssen , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , James Norman Wiley
CPC classification number: G03F1/64 , G03F1/22 , G03F1/62 , G03F7/7085 , G03F7/70916 , G03F7/70983
Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.
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公开(公告)号：US10466585B2
公开(公告)日：2019-11-05
申请号：US16062017
申请日：2016-12-02
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： David Ferdinand Vles , Erik Achilles Abegg , Aage Bendiksen , Derk Servatius Gertruda Brouns , Pradeep K. Govil , Paul Janssen , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , James Norman Wiley
Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle includes at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle.
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公开(公告)号：US11347142B2
公开(公告)日：2022-05-31
申请号：US17206649
申请日：2021-03-19
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： David Ferdinand Vles , Erik Achilles Abegg , Aage Bendiksen , Derk Servatius Gertruda Brouns , Pradeep K. Govil , Paul Janssen , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , James Norman Wiley
Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.
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Patent Agency Ranking
公开(公告)号：US10983431B2
公开(公告)日：2021-04-20
申请号：US16667956
申请日：2019-10-30
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor： David Ferdinand Vles , Erik Achilles Abegg , Aage Bendiksen , Derk Servatius Gertruda Brouns , Pradeep K. Govil , Paul Janssen , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , James Norman Wiley
Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.
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公开(公告)号：US20210109438A1
公开(公告)日：2021-04-15
申请号：US17130537
申请日：2020-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US10908496B2
公开(公告)日：2021-02-02
申请号：US16093537
申请日：2017-04-12
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US12298663B2
公开(公告)日：2025-05-13
申请号：US15770175
申请日：2016-10-11
Applicant: ASML NETHERLANDS B.V.
Inventor： Mária Péter , Erik Achilles Abegg , Adrianus Johannes Maria Giesbers , Johan Hendrik Klootwijk , Maxim Aleksandrovich Nasalevich , Wilhelmus Theodorus Anthonius Johannes Van Den Einden , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen
Abstract: Methods of manufacturing a pellicle for a lithographic apparatus including a method involving depositing at least one graphene layer on a planar surface of a substrate. The substrate has a first substrate portion and a second substrate portion. The method further includes removing the first substrate portion to form a freestanding membrane from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.
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公开(公告)号：US11762281B2
公开(公告)日：2023-09-19
申请号：US17130537
申请日：2020-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
CPC classification number: G03F1/62 , G02B5/208 , G02B5/283 , G03F1/82 , G03F7/70191 , G03F7/70575 , G03F7/70916 , G03F7/70958 , G03F7/70983
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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