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103 条记录 (耗时 0.026 秒)

    Low-Temperature Method for Forming Amorphous Semiconductor Layers
    81.
    发明申请
    Low-Temperature Method for Forming Amorphous Semiconductor Layers 审中-公开
    用于形成非晶半导体层的低温方法

    公开(公告)号：US20120258561A1

    公开(公告)日：2012-10-11

    申请号：US13083625

    申请日：2011-04-11

    申请人： Jian Li ,  Venkatesan Murali ,  Yonghua Liu ,  Dong Xu

    发明人： Jian Li ,  Venkatesan Murali ,  Yonghua Liu ,  Dong Xu

    IPC分类号： H01L31/02 ,  H01L31/0368 ,  H01L31/0376

    CPC分类号： H01L31/202 ,  H01L31/056 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    摘要： In embodiments of the present invention an undoped amorphous, nanocrystalline or microcrystalline semiconductor layer and a heavily doped amorphous, nanocrystalline, or microcrystalline semiconductor layer are formed on a monocrystalline silicon lamina. The lamina is the base region of a photovoltaic cell, while the amorphous, nanocrystalline or monocrystalline layers serve to passivate the surface of the lamina, reducing recombination at this surface. In embodiments, the heavily doped layer additionally serves as either the emitter of the cell or to provide electrical contact to the base layer. The undoped and heavily doped layers are deposited at low temperature, for example about 150 degrees C. or less with hydrogen dilution. This low temperature allows use of low-temperature materials and methods, while increased hydrogen dilution improves film quality and/or conductivity.

    摘要翻译： 在本发明的实施例中，在单晶硅层上形成未掺杂的非晶，纳米晶体或微晶半导体层和重掺杂的非晶，纳米晶体或微晶半导体层。 薄层是光伏电池的基极区域，而非晶态，纳米晶体或单晶层用于钝化层的表面，减少了该表面的复合。 在实施例中，重掺杂层另外用作电池的发射极或提供与基极层的电接触。 未掺杂的和重掺杂的层在低温下沉积，例如约150℃或更低的氢稀释。 这种低温允许使用低温材料和方法，而增加的氢稀释改善了膜质量和/或导电性。

    Method to Form a Device by Constructing a Support Element on a Thin Semiconductor Lamina
    83.
    发明申请
    Method to Form a Device by Constructing a Support Element on a Thin Semiconductor Lamina 失效
    通过在薄型半导体层上构造支撑元件来形成器件的方法

    公开(公告)号：US20120220068A1

    公开(公告)日：2012-08-30

    申请号：US13450414

    申请日：2012-04-18

    申请人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

    发明人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

    IPC分类号： H01L31/0376 ,  H01L31/18

    CPC分类号： H01L31/1892 ,  H01L31/0747 ,  H01L31/1864 ,  Y02E10/50

    摘要： A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved.Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal.

    摘要翻译： 描述了半导体组件，其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后，例如通过镀覆或通过施加前体和原位固化来形成支撑元件，得到支撑元件，其可以用于 例如，金属，陶瓷，聚合物等。这与预先形成的支撑元件形成对比，该预制形成的支撑元件在其形成之后固定到层板上，或者与施加器晶片相接触，该晶片随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上。 在一些实施例中，该工艺流程允许薄层在高温下退火，然后在该退火之后具有在层的每个表面上形成的非晶硅层。

    METHOD TO TEXTURE A LAMINA SURFACE WITHIN A PHOTOVOLTAIC CELL
    84.
    发明申请
    METHOD TO TEXTURE A LAMINA SURFACE WITHIN A PHOTOVOLTAIC CELL 有权
    在光伏电池中纹理表面的方法

    公开(公告)号：US20120205655A1

    公开(公告)日：2012-08-16

    申请号：US13446051

    申请日：2012-04-13

    申请人： S. Brad Herner

    发明人： S. Brad Herner

    IPC分类号： H01L31/0376

    CPC分类号： H01L31/0236 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/03921 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： It is advantageous to create texture at the surface of a photovoltaic cell to reduce reflection and increase travel length of light within the cell. A method is disclosed to create texture at the surface of a silicon body by reacting a silicide-forming metal at the surface, where the silicide-silicon interface is non-planar, then stripping the silicide, leaving behind a textured surface. Depending on the metal and the conditions of silicide formation, the resulting surface may be faceted. The peak-to-valley height of this texturing will generally be between about 300 and about 5000 angstroms, which is well-suited for use in photovoltaic cells comprising a thin silicon lamina.

    摘要翻译： 有利的是在光伏电池的表面处产生纹理以减少反射并增加电池内的光的行进长度。 公开了一种通过使表面处的硅化物形成金属（其中硅化物 - 硅界面是非平面的）反应然后剥离硅化物，留下纹理表面来在硅体的表面上产生纹理的方法。 取决于金属和硅化物形成的条件，所得到的表面可以是刻面的。 该纹理的峰谷高度通常在约300至约5000埃之间，这非常适用于包含薄硅层的光伏电池。

    Method to form a device by constructing a support element on a thin semiconductor lamina
    88.
    发明授权
    Method to form a device by constructing a support element on a thin semiconductor lamina 有权
    通过在薄半导体层上构造支撑元件来形成器件的方法

    公开(公告)号：US08173452B1

    公开(公告)日：2012-05-08

    申请号：US12980424

    申请日：2010-12-29

    申请人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

    发明人： Christopher J. Petti ,  Mohamed M. Hilali ,  Theodore Smick ,  Venkatesan Murali ,  Kathy J. Jackson ,  Zhiyong Li ,  Gopalakrishna Prabhu

    IPC分类号： H01L21/00

    CPC分类号： H01L31/1892 ,  H01L31/0747 ,  H01L31/1864 ,  Y02E10/50

    摘要： A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to a rigid or semi-rigid pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element; such adhesives may be unable to tolerate processing temperatures and conditions required to complete the device. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal. A device may be formed which comprises the lamina, such as a photovoltaic cell.

    摘要翻译： 描述了半导体组件，其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后，例如通过镀覆或通过施加前体和原位固化来形成支撑元件，得到支撑元件，其可以用于 例如，金属，陶瓷，聚合物等。这与刚性或半刚性的预成形支撑元件形成对比，该刚性或半刚性的预成型支撑元件在其形成之后固定到层板上，或者与施加器晶片相接触，其中层板随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上; 这种粘合剂可能不能容忍完成装置所需的加工温度和条件。 在一些实施例中，该工艺流程允许薄层在高温下退火，然后在该退火之后具有在层的每个表面上形成的非晶硅层。 可以形成包括层的器件，例如光伏电池。

    Ion Source and a Method of Generating an Ion Beam Using an Ion Source
    89.
    发明申请
    Ion Source and a Method of Generating an Ion Beam Using an Ion Source 有权
    离子源和使用离子源产生离子束的方法

    公开(公告)号：US20120104273A1

    公开(公告)日：2012-05-03

    申请号：US12917510

    申请日：2010-11-02

    申请人： Geoffrey Ryding ,  Drew Arnold ,  William H. Park ,  Ronald Horner

    发明人： Geoffrey Ryding ,  Drew Arnold ,  William H. Park ,  Ronald Horner

    IPC分类号： H01J27/00

    CPC分类号： H01J27/04 ,  H01J37/08 ,  H01J2237/082

    摘要： Multiple control electrodes are provided asymmetrically within the plasma chamber of an ion source at respective positions along the length of the plasma chamber. Biasing the control electrodes selectively can selectively enhance the ion extraction current at adjacent positions along the length of the extraction slit. A method of generating an ion beam is disclosed in which the strengths of the transverse electric fields at different locations along the length of the plasma chamber are controlled to modify the ion beam linear current density profile along the length of the slit. The method is used for controlling the uniformity of a ribbon beam.

    摘要翻译： 多个控制电极在离子源的等离子体室内沿着等离子体室的长度的各个位置处非对称地设置。 选择性地偏压控制电极可以选择性地提高沿着提取狭缝的长度的相邻位置处的离子提取电流。 公开了一种产生离子束的方法，其中控制沿着等离子体室的长度的不同位置处的横向电场的强度，以沿着狭缝的长度修改离子束线性电流密度分布。 该方法用于控制带束束的均匀性。