Convertor for X-ray radiography and its manufacturing method and an X-ray detector
    3.
    发明授权
    Convertor for X-ray radiography and its manufacturing method and an X-ray detector 有权
    X射线摄影变换器及其制造方法和X射线检测器

    公开(公告)号:US08895937B2

    公开(公告)日:2014-11-25

    申请号:US13498693

    申请日:2010-09-16

    IPC分类号: G01T1/20 G01N23/06

    CPC分类号: G01T1/2002

    摘要: The present disclosure provides a convertor for X-ray radiography and its manufacturing method and an X-ray detector, wherein the surface of the scintillator facing the X-ray is covered with photonic crystals of a two-dimensional or three-dimensional spatial structure capable of reflecting the visible light facing the photonic crystals generated by the scintillator to increase the intensity of the output light of the scintillator by more than 100%, thus enhancing the image brightness and improving the image resolution, in addition to reducing to a certain extent the interference between pixels due to the ability of the photonic crystals to control the direction of the light being reflected, for example, by controlling the reflecting direction so as to be vertical to the surface of the scintillator, and the manufacturing method and material for the photonic crystals are low in cost without toxicity, enabling it to be used more widely.

    摘要翻译: 本公开提供了一种用于X射线照相及其制造方法和X射线检测器的转换器,其中面向X射线的闪烁体的表面被具有二维或三维空间结构的光子晶体覆盖, 反射由闪烁体产生的面向光子晶体的可见光,以将闪烁器的输出光的强度提高大于100%,从而提高图像亮度并提高图像分辨率,除了在一定程度上降低 由于光子晶体控制反射光的方向的像素之间的干涉,例如通过控制反射方向以垂直于闪烁体的表面,以及光子的制造方法和材料 晶体成本低,无毒性,使其可以更广泛地使用。

    Methods to Improve the Electrical Conductivity for Moulded Plastic Parts
    4.
    发明申请
    Methods to Improve the Electrical Conductivity for Moulded Plastic Parts 审中-公开
    改善模塑塑料件电导率的方法

    公开(公告)号:US20140001415A1

    公开(公告)日:2014-01-02

    申请号:US13977773

    申请日:2011-12-28

    IPC分类号: H01B1/04

    摘要: Disclosed herein are the methods to improve the electrical conductivity for micro-moulded plastic parts containing carbon nanotubes. The polymer/carbon nanotubes composites suitable for polymer micromoulding including 80˜99.95 wt % of a polymer pellet or powder, 0-2 wt % of antioxidant, 0-2 wt % of dispersant agent and 0.05-20 wt % of carbon nanotube with a diameter 0.5-200 nm and a length of 200 nm-20 μm are firstly prepared through melt extrusion. The plastic microparts are prepared by micromoulding of the polymer/carbon nanotubes composites including micro extrusion, micro injection and hot embossing at optimized processing conditions and then are subject to a post thermal treatment to enhance the electrical conductivity. The post thermal treatment methods include electric heating, microwave, infrared or plasma heating. The methods disclosed can be used to prepare electrical conductive biomedical implanted plastic micro devices for minimally invasive surgery, biomedical sensors, microelectrodes, drug delivery devices, automated pipetting systems, breathing tubes, EMI devices etc.

    摘要翻译: 本文公开了改善含有碳纳米管的微型塑料部件的导电性的方法。 聚合物/碳纳米管复合材料适用于聚合物微型成型,包括聚合物颗粒或粉末的80〜99.95重量%,抗氧化剂0-2重量%,分散剂0-2重量%和碳纳米管0.05-20重量% 首先通过熔融挤出制备直径为0.5-200nm,长度为200nm-20μm的树脂。 通过在优化的加工条件下微聚合聚合物/碳纳米管复合材料,包括微挤出,微注射和热压花,然后进行后热处理以增强导电性,制备塑料微孔。 后热处理方法包括电加热,微波,红外或等离子体加热。 所公开的方法可用于制备用于微创手术的导电生物医学植入塑料微型装置,生物医学传感器,微电极,药物递送装置,自动移液系统,呼吸管,EMI装置等。

    SECURITY CONFIGURATION VERFICIATION DEVICE AND METHOD AND NETWORK SYSTEM EMPLOYING THE SAME
    5.
    发明申请
    SECURITY CONFIGURATION VERFICIATION DEVICE AND METHOD AND NETWORK SYSTEM EMPLOYING THE SAME 有权
    安全配置验证设备及其使用的方法和网络系统

    公开(公告)号:US20130219496A1

    公开(公告)日:2013-08-22

    申请号:US13882579

    申请日:2011-11-18

    IPC分类号: H04L29/06

    CPC分类号: H04L63/1408 H04L63/1433

    摘要: The invention discloses a security configuration verification device for performing a security configuration verification on a network device, which comprises: one or more preconfigured scanning policies; a scanning policy generator, which selects a scanning policy from the one or more preconfigured scanning policies to generate a new scanning policy corresponding to the network device; and a scanner, which performs the security scanning on the network device with the generated new scanning policy and thereby performs the security configuration verification. The invention also discloses a corresponding security configuration verification method and a network system employing the verification device.

    摘要翻译: 本发明公开了一种用于在网络设备上执行安全配置验证的安全配置验证设备,包括:一个或多个预配置的扫描策略; 扫描策略生成器,其从所述一个或多个预配置的扫描策略中选择扫描策略,以生成与所述网络设备相对应的新的扫描策略; 以及扫描器,其利用所生成的新扫描策略在网络设备上执行安全扫描,从而执行安全配置验证。 本发明还公开了一种对应的安全配置验证方法和采用验证设备的网络系统。

    CONVERTOR FOR X-RAY RADIOGRAPHY AND ITS MANUFACTURING METHOD AND AN X-RAY DETECTOR
    6.
    发明申请
    CONVERTOR FOR X-RAY RADIOGRAPHY AND ITS MANUFACTURING METHOD AND AN X-RAY DETECTOR 有权
    X射线辐射转换器及其制造方法和X射线探测器

    公开(公告)号:US20120201346A1

    公开(公告)日:2012-08-09

    申请号:US13498693

    申请日:2010-09-16

    IPC分类号: G01N23/06

    CPC分类号: G01T1/2002

    摘要: The present disclosure provides a convertor for X-ray radiography and its manufacturing method and an X-ray detector, wherein the surface of the scintillator facing the X-ray is covered with photonic crystals of a two-dimensional or three-dimensional spatial structure capable of reflecting the visible light facing the photonic crystals generated by the scintillator to increase the intensity of the output light of the scintillator by more than 100%, thus enhancing the image brightness and improving the image resolution, in addition to reducing to a certain extent the interference between pixels due to the ability of the photonic crystals to control the direction of the light being reflected, for example, by controlling the reflecting direction so as to be vertical to the surface of the scintillator, and the manufacturing method and material for the photonic crystals are low in cost without toxicity, enabling it to be used more widely.

    摘要翻译: 本公开提供了一种用于X射线照相及其制造方法和X射线检测器的转换器,其中面向X射线的闪烁体的表面被具有二维或三维空间结构的光子晶体覆盖, 反射由闪烁体产生的面向光子晶体的可见光,以将闪烁器的输出光的强度提高大于100%,从而提高图像亮度并提高图像分辨率,除了在一定程度上降低 由于光子晶体控制反射光的方向的像素之间的干涉,例如通过控制反射方向以垂直于闪烁体的表面,以及光子的制造方法和材料 晶体成本低,无毒性,使其可以更广泛地使用。

    SOYBEAN TRANSCRIPTION FACTORS AND OTHER GENES AND METHODS OF THEIR USE
    7.
    发明申请
    SOYBEAN TRANSCRIPTION FACTORS AND OTHER GENES AND METHODS OF THEIR USE 审中-公开
    大豆转录因子及其使用的基因及方法

    公开(公告)号:US20120198587A1

    公开(公告)日:2012-08-02

    申请号:US13381448

    申请日:2010-06-30

    IPC分类号: C12N15/82 A01H5/00

    CPC分类号: C07K14/415

    摘要: Gene expression is controlled at the transcriptional level by very diverse group of proteins called transcription factors (TFs). 5671 soybean (Glycine max) genes have been identified and disclosed as putative transcription factors through mining of soybean genome sequences. Distinct classes of the TFs are also disclosed which may be expressed and or function in a manner that is tissue specific, developmental stage specific, biotic and/or abiotic stress specific. Manipulation and/or genetic engineering of specific transcription factors may improve the agronomic performance or nutritional quality of plants. Transgenic plants expressing a select number of these TFs are disclosed. These transgenic plants show some promising traits, such as improving the capability of the plant to grow and reproduce under drought conditions.

    摘要翻译: 基因表达通过称为转录因子(TF)的非常多样化的蛋白质组在转录水平下控制。 已经通过大豆基因组序列的开采,鉴定了5671个大豆(Glycine max)基因并将其公开为推定的转录因子。 还公开了TF的不同类别,其可以以组织特异性,发育阶段特异性,生物和/或非生物胁迫特异性的方式表达和/或起作用。 特定转录因子的操作和/或遗传工程可以改善植物的农艺性能或营养品质。 公开了表达选择数目的这些TF的转基因植物。 这些转基因植物显示出一些有希望的性状,例如提高植物在干旱条件下生长和繁殖的能力。

    Reproducible, high yield method for fabricating ultra-short T-gates on HFETs
    10.
    发明授权
    Reproducible, high yield method for fabricating ultra-short T-gates on HFETs 有权
    用于在HFET上制造超短T型栅极的可再现的高产率方法

    公开(公告)号:US07943286B2

    公开(公告)日:2011-05-17

    申请号:US12079529

    申请日:2008-03-27

    IPC分类号: G03F7/26

    CPC分类号: H01L21/28581 H01L21/0272

    摘要: A method for fabricating ultra-short T-gates on heterojunction field effect transistors (HFETs) comprising the steps of (a) providing a coating of three layers of resists, with polymethylmethacrylate (PMMA) with high molecular weight on the bottom, polydimethylglutarimide (PMGI) in the middle, and PMMA with low molecular weight on the top; (b) in a first exposure, exposing and developing the layers with a dose of a developer that is high enough to allow the developer to break the top PMMA but low to avoid contributing significantly to the overall dose received in the bottom PMMA layer; and (c) in a second exposure, using an exposure and developing process to define 0.03-0.05 um openings in the bottom PMMA layer.

    摘要翻译: 一种用于在异质结场效应晶体管(HFET)上制造超短T栅极的方法,包括以下步骤:(a)提供三层抗蚀剂的涂层与底部具有高分子量的聚甲基丙烯酸甲酯(PMMA),聚二甲基戊二酰亚胺(PMGI ),顶部分子量低的PMMA; (b)在第一次曝光中,用一定剂量的显影剂曝光和显影层,以使得显影剂能够破坏顶部PMMA但是低,以避免对底部PMMA层中所接收的总剂量产生显着影响; 和(c)在第二次曝光中,使用曝光和显影过程在底部PMMA层中限定0.03-0.05μm的开口。