TOWED ARRAY BALLASTING UNIT
    81.
    发明公开

    公开(公告)号:US20230234680A1

    公开(公告)日:2023-07-27

    申请号:US17582247

    申请日:2022-01-24

    摘要: A towed array ballasting unit includes a canister, an internal bladder, an external bladder, a motor valve, fluid, a shroud, and printed circuit boards. The canister includes a head endcap and an aft endcap with the internal bladder located within and attached to an internal end of a fluid channel. An external bladder is located outside the canister and attached to an external end of the fluid channel. The motor valve is attached to the aft endcap of the canister and the internal end of fluid channel. The fluid moves between the internal bladder and external bladder via the fluid channel. The shroud forms a shell around the canister, external bladder, and a connector that connects the towed array ballasting system to an array tail. The printed circuit boards execute instructions provided by a computer.

    WBG and UWBG Semiconductor with P- and N-type Conductivity and Process For Making the Same

    公开(公告)号:US20230197454A1

    公开(公告)日:2023-06-22

    申请号:US17714204

    申请日:2022-04-06

    摘要: Methods for efficient doping of wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductors by implantation, and WBG and UWBG semiconductors made using the disclosed methods. A p-type semiconductor region is formed by implanting specified acceptor and donor co-dopant atoms in a predetermined ratio, e.g., two acceptors to one donor (ADA), into the semiconductor lattice. An n-type type semiconductor region is by implanting specified donor and acceptor co-dopant atoms in a predetermined ratio, e.g., two donors to one acceptor (DAD), into the semiconductor lattice. Compensator atoms are also implanted into the lattice to complete formula units in the crystal lattice structure and preserve the stoichiometry of the semiconductor material. The doped material is then annealed to activate the dopants and repair any damage to the lattice that might have occurred during implantation.