公开(公告)号：US08148733B2

公开(公告)日：2012-04-03

申请号：US13161254

申请日：2011-06-15

Applicant: Wen-Huang Liu ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

Inventor： Wen-Huang Liu ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

IPC: H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L29/22 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/109 ,  H01L33/00 ,  H01L31/072

CPC classification number: H01L33/38 ,  H01L27/15 ,  H01L33/385 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Abstract translation: 提供了用于控制诸如LED的半导体器件中的电流的技术。 对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。 对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。 对于一些实施例，可以提供电流引导结构和第二电流路径。

公开(公告)号：US20120073638A1

公开(公告)日：2012-03-29

申请号：US13238847

申请日：2011-09-21

Applicant: Yong-Hang Zhang ,  Ding Ding

Inventor： Yong-Hang Zhang ,  Ding Ding

IPC: H01L29/267 ,  H01L31/0328

CPC classification number: H01L31/0687 ,  H01L31/02966 ,  H01L31/03046 ,  Y02B10/10 ,  Y02E10/544

Abstract: Lattice-matched II-VI (ZnCdHg)(SeTe) and III-V (InGaAsP) semiconductors grown on InP substrates can be used for preparing multi junction solar cells that can potentially reach efficiencies greater than 40% under one sun. For example, a semiconductor structure can be prepared comprising, an InP substrate; an optional InGaAsP building block formed over the InP substrate; an InP building block formed over either the InGaAsP building block, when present, or the InP substrate and at least one (ZnCdHg)(SeTe) building block formed over the InP building block.

Abstract translation: 在InP衬底上生长的晶格匹配的II-VI（ZnCdHg）（SeTe）和III-V（InGaAsP））半导体可用于制备在一个太阳下潜在地达到40％以上的效率的多结太阳能电池。 例如，可以制备半导体结构，其包括：InP衬底; 形成在InP衬底上的可选InGaAsP结构单元; 形成在InGaAsP结构单元上，当存在时，或InP衬底和至少一个（ZnCdHg）（SeTe）构件块形成在InP构件上的InP构件块。

公开(公告)号：US08134168B2

公开(公告)日：2012-03-13

申请号：US10575625

申请日：2004-10-13

Applicant: Hiromitsu Sakai ,  Mineo Okuyama

Inventor： Hiromitsu Sakai ,  Mineo Okuyama

IPC: H01L33/00 ,  H01L31/0328 ,  H01L31/072

CPC classification number: H01L33/32 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L31/184 ,  H01L33/007 ,  H01L33/12 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04

Abstract: An object of the present invention is to provide a Group III nitride semiconductor element which comprises a thick AlGaN layer exhibiting high crystallinity and containing no cracks, and which does not include a thick GaN layer (which generally serves as a light-absorbing layer in an ultraviolet LED).The inventive Group III nitride semiconductor element comprises a substrate; a first nitride semiconductor layer composed of AlN which is provided on the substrate; a second nitride semiconductor layer composed of Alx1Ga1-x1N (0≦x1≦0.1) which is provided on the first nitride semiconductor layer; and a third nitride semiconductor layer composed of Alx2Ga1-x2N (0

Abstract translation: 本发明的目的是提供一种III族氮化物半导体元件，其包括具有高结晶度且不含裂纹的厚AlGaN层，并且不包括厚的GaN层（其通常用作光吸收层 紫外线LED）。 本发明的III族氮化物半导体元件包括基底; 由AlN构成的第一氮化物半导体层，其设置在基板上; 由设置在所述第一氮化物半导体层上的Al x Ga 1-x1 N（0＆amp; nlE; x1＆nlE; 0.1）构成的第二氮化物半导体层; 以及设置在第二氮化物半导体层上的由Al x Al 1-x 2 N（0

公开(公告)号：US08120081B2

公开(公告)日：2012-02-21

申请号：US12557014

申请日：2009-09-10

Applicant: Atsushi Murakoshi

Inventor： Atsushi Murakoshi

IPC: H01L31/0328

CPC classification number: H01L27/14689 ,  H01L21/76898 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

Abstract: In a back-illuminated solid-state imaging device, a multilayer interconnect layer, a semiconductor substrate, a plurality of color filters, and a plurality of microlenses are provided in this order. A p-type region is formed so as to partition a lower portion of the semiconductor substrate into a plurality of regions, and an insulating member illustratively made of BSG is buried immediately above the p-type region. PD regions are isolated from each other by the p-type region and the insulating member. Moreover, a high-concentration region is formed in a lower portion of the PD region, and an upper portion is served as a low-concentration region.

Abstract translation: 在背照式固态成像装置中，按顺序设置多层互连层，半导体基板，多个滤色器和多个微透镜。 形成p型区域，以便将半导体衬底的下部分隔成多个区域，并且示例性地由BSG制成的绝缘构件被埋在p型区域的正上方。 PD区域通过p型区域和绝缘构件彼此隔离。 此外，在PD区域的下部形成高浓度区域，将上部作为低浓度区域。

公开(公告)号：US08076676B2

公开(公告)日：2011-12-13

申请号：US12686612

申请日：2010-01-13

Applicant: Nobuharu Ohsawa

Inventor： Nobuharu Ohsawa

IPC: H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/22 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/109 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC classification number: H01L51/5056 ,  H01L51/5012 ,  H01L51/5048 ,  H01L51/5072

Abstract: The present invention provides a light-emitting element including an electron-transporting layer and a hole-transporting layer between a first electrode and a second electrode; and a first layer and a second layer between the electron-transporting layer and the hole-transporting layer, wherein the first layer includes a first organic compound and an organic compound having a hole-transporting property, the second layer includes a second organic compound and an organic compound having an electron-transporting property, the first layer is formed in contact with the first electrode side of the second layer, the first organic compound and the second organic compound are the same compound, and a voltage is applied to the first electrode and the second electrode, so that both of the first organic compound and the second organic compound emit light.

Abstract translation: 本发明提供一种在第一电极和第二电极之间包括电子传输层和空穴传输层的发光元件; 以及电子传输层和空穴传输层之间的第一层和第二层，其中第一层包括第一有机化合物和具有空穴传输性质的有机化合物，第二层包括第二有机化合物和 具有电子传输性的有机化合物，第一层形成为与第二层的第一电极侧接触，第一有机化合物和第二有机化合物是相同的化合物，并且向第一电极施加电压 和第二电极，使得第一有机化合物和第二有机化合物两者都发光。

公开(公告)号：US08071973B2

公开(公告)日：2011-12-06

申请号：US13016217

申请日：2011-01-28

Applicant: Sun Kyung Kim

Inventor： Sun Kyung Kim

IPC: H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/22

CPC classification number: H01L33/44 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a passivation layer protecting a surface of the light emitting structure. The passivation layer includes a first passivation layer on a top surface of the light emitting structure and a second passivation layer having a refractive index different from that of the first passivation layer, the second passivation layer being disposed on a side surface of the light emitting structure. The second passivation layer has a refractive index greater than that of the first passivation layer.

Abstract translation: 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括发光结构，其包括第一导电类型半导体层，第二导电类型半导体层和在第一导电类型半导体层和第二导电类型半导体层之间的有源层，以及保护表面的钝化层 的发光结构。 钝化层包括在发光结构的顶表面上的第一钝化层和具有不同于第一钝化层的折射率的第二钝化层，第二钝化层设置在发光结构的侧表面上 。 第二钝化层的折射率大于第一钝化层的折射率。

公开(公告)号：US08053806B2

公开(公告)日：2011-11-08

申请号：US12940879

申请日：2010-11-05

Applicant: Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

Inventor： Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

IPC: H01L29/24 ,  H01L33/00 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L29/22

CPC classification number: H01L21/02389 ,  B82Y20/00 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

Abstract: A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base 13, a GaN based semiconductor region 15, an active layer active layer 17, and a GaN semiconductor region 19. The primary surface 13a of the group III nitride semiconductor supporting base 13 is not any polar plane, and forms a finite angle with a reference plane Sc that is orthogonal to a reference axis Cx extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region 15 is grown on the semipolar primary surface 13a. A GaN based semiconductor layer 21 of the GaN based semiconductor region 15 is, for example, an n-type GaN based semiconductor, and the n-type GaN based semiconductor is doped with silicon. A GaN based semiconductor layer 23 of an oxygen concentration of 5×1016 cm−3 or more provides an active layer 17 with an excellent crystal quality, and the active layer 17 is grown on the primary surface of the GaN based semiconductor layer 23.

Abstract translation: 提供具有优异表面形态的具有氮化镓基半导体膜的III族氮化物半导体器件。 III族氮化物光半导体器件11a包括III族氮化物半导体支撑基底13，GaN基半导体区域15，有源层有源层17和GaN半导体区域19.第III族氮化物半导体支撑基底13的主表面13a 基座13不是任何极性平面，并且与参考平面Sc形成有限的角度，该参考平面Sc与在III族氮化物半导体的c轴方向上延伸的基准轴Cx正交。 在半极性主表面13a上生长GaN基半导体区域15。 GaN系半导体区域15的GaN系半导体层21例如为n型GaN系半导体，n型GaN系半导体掺杂有硅。 氧浓度为5×1016cm-3以上的GaN系半导体层23提供具有优异晶体质量的有源层17，并且在GaN基半导体层23的主表面上生长有源层17。

公开(公告)号：US08026540B2

公开(公告)日：2011-09-27

申请号：US12953417

申请日：2010-11-23

Applicant: Hong Zhu ,  Jim Yang

Inventor： Hong Zhu ,  Jim Yang

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/15 ,  H01L29/16 ,  H01L31/12 ,  H01L33/00 ,  H01L31/153 ,  H01L29/735 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L31/06

CPC classification number: H01L27/14647 ,  H01L27/14689

Abstract: A system is provided for determining a color using a CMOS image sensor. The system includes an input port for receiving a user command. The system further includes an image sensor, an optical device that forms an image on the image sensor, and a processor. The image sensor includes an n-type substrate and a p-type epitaxy layer overlying the n-type substrate. The image sensor includes a control circuit that applies a first voltage on the n-type substrate to obtain a first output. The control circuit applies a second voltage on the n-type substrate to obtain a second output. The control circuit also applies a third voltage on the n-type substrate to obtain a third output. The p-type epitaxy layer includes a silicon germanium material. The image sensor additionally includes an epitaxy layer interposed between the n-type substrate and the p-type epitaxy layer.

Abstract translation: 提供了一种使用CMOS图像传感器来确定颜色的系统。 该系统包括用于接收用户命令的输入端口。 该系统还包括图像传感器，在图像传感器上形成图像的光学装置和处理器。 图像传感器包括n型衬底和覆盖在n型衬底上的p型外延层。 图像传感器包括在n型衬底上施加第一电压以获得第一输出的控制电路。 控制电路在n型衬底上施加第二电压以获得第二输出。 控制电路还在n型衬底上施加第三电压以获得第三输出。 p型外延层包括硅锗材料。 图像传感器还包括插入在n型衬底和p型外延层之间的外延层。

公开(公告)号：US08017976B2

公开(公告)日：2011-09-13

申请号：US12801384

申请日：2010-06-07

Applicant: Daniel R. Juliano ,  Deborah Mathias ,  Neil M. Mackie

Inventor： Daniel R. Juliano ,  Deborah Mathias ,  Neil M. Mackie

IPC: H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: C23C14/3414 ,  C23C14/0623 ,  C23C14/562 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/206 ,  Y02E10/541 ,  Y02P70/521

Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.

Abstract translation: 溅射靶，包括溅射层和支撑结构。 溅射层包括含碱的过渡金属。 支撑结构包括不会对太阳能电池的基于铜铟硒（CIS）的半导体吸收层的性能产生负面影响的第二材料。 溅射层直接接触第二材料。

公开(公告)号：US08003994B2

公开(公告)日：2011-08-23

申请号：US12823866

申请日：2010-06-25

Applicant: Wen-Huang Liu ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

Inventor： Wen-Huang Liu ,  Chen-Fu Chu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Yuan-Hsiao Chang

IPC: H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/22

CPC classification number: H01L33/38 ,  H01L27/15 ,  H01L33/385 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Abstract translation: 提供了用于控制诸如LED的半导体器件中的电流的技术。 对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。 对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。 对于一些实施例，可以提供电流引导结构和第二电流路径。