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    FLUORESCENT POWDER APPLYING DEVICE AND METHOD CAPABLE OF DETECTING INSTANTLY COLOR TEMPERATURE OF WHITE LIGHT IN A MANUFACTURING PROCESS
    2.
    发明申请
    FLUORESCENT POWDER APPLYING DEVICE AND METHOD CAPABLE OF DETECTING INSTANTLY COLOR TEMPERATURE OF WHITE LIGHT IN A MANUFACTURING PROCESS 审中-公开
    荧光粉应用装置和方法可以检测制造过程中白光的固有温度

    公开(公告)号：US20120264236A1

    公开(公告)日：2012-10-18

    申请号：US13446504

    申请日：2012-04-13

    Applicant: LIANN-BE CHANG ,  CHIA-YI YEN ,  YUAN-HSIAO CHANG

    Inventor： LIANN-BE CHANG ,  CHIA-YI YEN ,  YUAN-HSIAO CHANG

    IPC: H01L21/66 ,  H01L33/50 ,  B05C19/04 ,  H01L33/44

    CPC classification number: H01L33/0095 ,  G01J5/60 ,  G01J2001/4252 ,  H01L2933/0041

    Abstract: A fluorescence powder spraying device capable of detecting instantly color temperature of white light in a manufacturing process, comprising: a spraying region, provided with a movable nozzle and an LED component-to-be-sprayed; a measuring region, provided with a light source and a light detector; and a monitor plate, which can be moved in said spraying region and said measuring region. Said monitor plate undergoes at least a fluorescence powder spraying process with said LED components-to-be-sprayed in said spraying region, to form at least a fluorescence powder layer, and in said measuring region, use said light source to agitate said fluorescence powder layer on said monitor plate, and use said light detector to measure color temperature of white light, to detect speedily color temperature of said fluorescence powder layer, hereby raising. yield of LED component reaching the target color temperature.

    Abstract translation: 一种能够在制造过程中即时检测白光的色温的荧光粉末喷涂装置，其特征在于，包括：设置有可动喷嘴的喷射区域和待喷射的LED部件; 测量区域，设置有光源和光检测器; 以及可以在所述喷射区域和所述测量区域中移动的监视器板。 所述监测板经过至少一种荧光粉末喷涂方法，所述荧光粉末喷涂方法与所述喷涂区域中待喷射的所述LED组分形成至少荧光粉末层，并且在所述测量区域中，使用所述光源搅拌所述荧光粉末 并使用所述光检测器测量白光的色温，以检测所述荧光粉层的快速色温，因此提高。 LED组件的产量达到目标色温。

    Method for fabricating LED
    5.
    发明申请
    Method for fabricating LED 审中-公开
    制造LED的方法

    公开(公告)号：US20060286694A1

    公开(公告)日：2006-12-21

    申请号：US11455839

    申请日：2006-06-20

    Applicant: Bor-Jen Wu ,  Mei-Hui Wu ,  Ken Kai-fu Chang ,  Chien-An Chen ,  Yuan-Hsiao Chang ,  Li-Shei Yeh

    Inventor： Bor-Jen Wu ,  Mei-Hui Wu ,  Ken Kai-fu Chang ,  Chien-An Chen ,  Yuan-Hsiao Chang ,  Li-Shei Yeh

    IPC: H01L21/00

    CPC classification number: H01L33/0079

    Abstract: A high etching selective layer and a light emitting structure are formed subsequently on a semiconductor substrate. Then, a p-type Ohmic contact layer and a metal substrate are formed subsequently on the light emitting structure. The semiconductor substrate and the high etching selective layer are removed. Next, an n-type electrode and a transparent conductive layer are formed adjacent to surface of the light emitting structure opposite to the metal layer.

    Abstract translation: 随后在半导体衬底上形成高蚀刻选择层和发光结构。 然后，在发光结构上随后形成p型欧姆接触层和金属基板。 去除半导体衬底和高蚀刻选择层。 接下来，与发光结构的与金属层相反的表面相邻地形成n型电极和透明导电层。

    Light-emitting device with improved optical efficiency
    6.
    发明申请
    Light-emitting device with improved optical efficiency 审中-公开
    具有提高光学效率的发光装置

    公开(公告)号：US20050230699A1

    公开(公告)日：2005-10-20

    申请号：US11104463

    申请日：2005-04-13

    Applicant: Bor-Jen Wu ,  Chien-An Chen ,  Mei-Hui Wu ,  Yuan-Hsiao Chang

    Inventor： Bor-Jen Wu ,  Chien-An Chen ,  Mei-Hui Wu ,  Yuan-Hsiao Chang

    IPC: H01L27/15 ,  H01L33/22 ,  H01L33/46

    CPC classification number: H01L33/22 ,  H01L33/46

    Abstract: A light-emitting device with improved optical efficiency is disclosed. A semiconductor substrate underlies active p-n junction layers, and has an internal scattering/reflecting surface near the bottom surface of the semiconductor substrate. Accordingly, the light originated at the active p-n junction layers is internally reflected from the internally curved reflecting surface, and substantially passes though the top surface of the semiconductor substrate.

    Abstract translation: 公开了一种具有改善的光学效率的发光器件。 半导体衬底位于有源p-n结层的底部，并且在半导体衬底的底表面附近具有内部散射/反射表面。 因此，起始于活性p-n结层的光从内部弯曲的反射表面内部反射，并且基本上穿过半导体衬底的顶表面。

    Method for activating P-type semiconductor layer
    7.
    发明申请
    Method for activating P-type semiconductor layer 有权
    激活P型半导体层的方法

    公开(公告)号：US20050130396A1

    公开(公告)日：2005-06-16

    申请号：US11049981

    申请日：2005-02-04

    Applicant: Bor-Jen Wu ,  Nae-Guann Yih ,  Yuan-Hsiao Chang

    Inventor： Bor-Jen Wu ,  Nae-Guann Yih ,  Yuan-Hsiao Chang

    IPC: H01L33/00 ,  H01L21/205 ,  H01L21/265 ,  H01L21/322 ,  H01L21/324

    CPC classification number: H01L21/3228 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02579

    Abstract: A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprises a gas source including a VI Group compound element. The performance of the semiconductor device activated by plasma according to this invention is similar to the performance of the semiconductor device activated by heat in the prior art. Therefore, this invention can provide a method, other then heat, for activating the P-type semiconductor layer of a semiconductor device. Moreover, in this invention, during the activating process by plasma, the layers other than P-type semiconductor layer will not be affected by plasma. That is, the activating process according to this invention will not cause any side-reactions in the layers other than the P-type semiconductor layer of a semiconductor device. Thus, this invention discloses an efficient method for activating a P-type semiconductor layer of a semiconductor structure by plasma instead of heat.

    Abstract translation: 在本发明中公开了一种用于激活半导体器件的P型半导体层的方法。 上述方法可以通过等离子体激活半导体器件的P型半导体层中的杂质。 等离子体包括包含VI族化合物元素的气体源。 根据本发明的由等离子体激活的半导体器件的性能类似于现有技术中由热激活的半导体器件的性能。 因此，本发明可以提供用于激活半导体器件的P型半导体层的方法，然后再加热。 此外，在本发明中，在通过等离子体的激活处理中，P型半导体层以外的层不受等离子体的影响。 也就是说，根据本发明的活化方法不会在半导体器件的P型半导体层以外的层中引起任何副反应。 因此，本发明公开了一种通过等离子体代替热来激活半导体结构的P型半导体层的有效方法。

    STACKED LED DEVICE WITH DIAGONAL BONDING PADS
    8.
    发明申请
    STACKED LED DEVICE WITH DIAGONAL BONDING PADS 有权
    堆叠LED设备与对角接头垫

    公开(公告)号：US20130277692A1

    公开(公告)日：2013-10-24

    申请号：US13450682

    申请日：2012-04-19

    Applicant: Yuan-Hsiao Chang ,  Yi-An Lu

    Inventor： Yuan-Hsiao Chang ,  Yi-An Lu

    IPC: H01L33/08 ,  H01L27/15

    CPC classification number: H01L25/0756 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/00

    Abstract: A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. A first electrode is coupled to the first doped layer. A second electrode is coupled to the second doped layer facing the same direction as the first electrode. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. A third electrode is coupled to the third doped layer facing the same direction as the first electrode. A fourth electrode is coupled to the fourth doped layer facing the same direction as the first electrode. An adhesive layer is between the first epitaxial structure and the second epitaxial structure.

    Abstract translation: 半导体发光器件包括衬底和衬底上的第一外延结构。 第一外延结构包括第一掺杂层，第一发光层和第二掺杂层。 第一电极耦合到第一掺杂层。 第二电极被耦合到面向与第一电极相同的方向的第二掺杂层。 第二外延结构包括第三掺杂层，第二发光层和第四掺杂层。 第三电极耦合到面向与第一电极相同方向的第三掺杂层。 第四电极耦合到面向与第一电极相同方向的第四掺杂层。 粘合剂层位于第一外延结构和第二外延结构之间。

    CONNECTION-PIPE SEDIMENT PREVENTION DEVICE AND METHOD
    9.
    发明申请
    CONNECTION-PIPE SEDIMENT PREVENTION DEVICE AND METHOD 审中-公开
    连接管预防装置和方法

    公开(公告)号：US20120286064A1

    公开(公告)日：2012-11-15

    申请号：US13535471

    申请日：2012-06-28

    Applicant: LIANN-BE CHANG ,  CHIA-YI YEN ,  YUAN-HSIAO CHANG

    Inventor： LIANN-BE CHANG ,  CHIA-YI YEN ,  YUAN-HSIAO CHANG

    IPC: B05B9/00

    CPC classification number: B05B7/144 ,  B01F3/12 ,  B01F11/0071 ,  B05B7/1431 ,  B05B7/1481 ,  B05B15/20 ,  B05B15/25 ,  B05B15/58

    Abstract: A connection-pipe sediment prevention device and method. In said connection-pipe sediment prevention device, at least a pressuring element is disposed at an opening of a pipe body of said connection-pipe, and a controller controls reciprocal movements of said pressuring elements, to make suspension liquid to flow in said connection-pipe and not to produce sediment. A nozzle is provided at bottom of said connection-pipe, to spray out said suspension liquid. Said connection-pipe sediment prevention method utilizes same means to make powder distribute evenly in said suspension liquid, so that said suspension liquid is sprayed out evenly from said nozzle. A connection-pipe principle is used, such that said suspension liquid having insoluble powder will not produce sediment, in achieving uniform spray. In addition, it is not required to put in large amount of powder and liquid at one time, thus saving production cost.

    Abstract translation: 连接管沉积物防止装置及方法。 在所述连接管沉积物防止装置中，至少一个加压元件设置在所述连接管的管体的开口处，并且控制器控制所述加压元件的往复运动，以使悬浮液体在所述连接管道中流动， 管道不产生沉淀物。 在所述连接管的底部设有喷嘴，以喷出所述悬浮液。 所述连接管沉积物防止方法利用相同的方法使粉末均匀地分布在所述悬浮液中，使得所述悬浮液从所述喷嘴均匀喷出。 使用连接管原理，使得具有不溶性粉末的所述悬浮液体不会产生沉淀物，以实现均匀的喷雾。 此外，不需要一次投入大量的粉末和液体，从而节省生产成本。

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