System and Method for Making Micro LED Display

    公开(公告)号:US20210013367A1

    公开(公告)日:2021-01-14

    申请号:US17036504

    申请日:2020-09-29

    Abstract: By using chip-by-chip, mainly separation technology, micro LED display can be made very accurately and efficiently. Firstly, after epitaxial process, the LED epi-wafer is processed into micro LEDs. Secondly, bonding substrates with driving circuits are provided for the LED epi-wafer. Then, each LED chip can be fastened to the substrate chip-by-chip simultaneously or sequentially, and each LED chip may be transferred by using separation technology simultaneously or sequentially. The LED epi-wafer per se can also be provided as LED display substrate. A light conversion layer and color defining layer can be patterned and sequentially formed on each LED chip individually to provide a LED display.

    Planar LED Lighting Apparatus
    3.
    发明申请
    Planar LED Lighting Apparatus 审中-公开
    平面LED照明器具

    公开(公告)号:US20130182430A1

    公开(公告)日:2013-07-18

    申请号:US13462925

    申请日:2012-05-03

    Applicant: Bor-Jen WU

    Inventor: Bor-Jen WU

    Abstract: A planar LED lighting apparatus includes a housing and multiple LEDs. The housing includes a reflective body and a light output surface opposing the reflective body. The multiple LEDs are mounted on sidewalls of the housing, and light from the multiple LEDs is reflected by the reflective body to travel toward the light output surface.

    Abstract translation: 平面LED照明装置包括壳体和多个LED。 壳体包括反射体和与反射体相对的光输出表面。 多个LED安装在壳体的侧壁上,并且来自多个LED的光被反射体反射以朝向光输出表面行进。

    Method for activating P-type semiconductor layer
    4.
    发明授权
    Method for activating P-type semiconductor layer 有权
    激活P型半导体层的方法

    公开(公告)号:US07368369B2

    公开(公告)日:2008-05-06

    申请号:US11049981

    申请日:2005-02-04

    CPC classification number: H01L21/3228 H01L21/0237 H01L21/0254 H01L21/02579

    Abstract: A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprises a gas source including a VI Group compound element. The performance of the semiconductor device activated by plasma according to this invention is similar to the performance of the semiconductor device activated by heat in the prior art. Therefore, this invention can provide a method, other then heat, for activating the P-type semiconductor layer of a semiconductor device. Moreover, in this invention, during the activating process by plasma, the layers other than P-type semiconductor layer will not be affected by plasma. That is, the activating process according to this invention will not cause any side-reactions in the layers other than the P-type semiconductor layer of a semiconductor device. Thus, this invention discloses an efficient method for activating a P-type semiconductor layer of a semiconductor structure by plasma instead of heat.

    Abstract translation: 在本发明中公开了一种用于激活半导体器件的P型半导体层的方法。 上述方法可以通过等离子体激活半导体器件的P型半导体层中的杂质。 等离子体包括包含VI族化合物元素的气体源。 根据本发明的由等离子体激活的半导体器件的性能类似于现有技术中由热激活的半导体器件的性能。 因此,本发明可以提供用于激活半导体器件的P型半导体层的方法,然后再加热。 此外,在本发明中,在通过等离子体的激活处理中,P型半导体层以外的层不受等离子体的影响。 也就是说,根据本发明的活化方法不会在半导体器件的P型半导体层以外的层中引起任何副反应。 因此,本发明公开了一种通过等离子体代替热来激活半导体结构的P型半导体层的有效方法。

    Electrode structure for a light-emitting element
    5.
    发明授权
    Electrode structure for a light-emitting element 失效
    用于发光元件的电极结构

    公开(公告)号:US06963167B2

    公开(公告)日:2005-11-08

    申请号:US10733408

    申请日:2003-12-12

    CPC classification number: H01L33/38 H01L33/20

    Abstract: An electrode structure for a light-emitting element includes a first electrode and a second electrode. The first electrode has a plurality of first fingers paralleling with each other, a first connective part, and at least a first contact part. Each first finger has a first end and a second end. Pluralities of first ends connect to the first connective part. The first contact part interposes between any first end and the first connective part. The second electrode has a plurality of second fingers paralleling with each other, a second connective part, and at least a second contact part. Each second finger has a third end and a fourth end, and any second finger is between and parallels to any two first fingers. Pluralities of third ends connect to the second connective part. The second contact part interposes between any third end and the second connective part. The second electrode defines a plurality of hexagonal units among a plurality of second ends. Each hexagonal unit shares its four sides to its adjacent hexagonal units, and the four sides include two of the second fingers and the second connective part. Each second end extends to the center of each hexagonal unit.

    Abstract translation: 用于发光元件的电极结构包括第一电极和第二电极。 第一电极具有彼此并联的多个第一指状物,第一连接部分和至少第一接触部分。 每个第一手指具有第一端和第二端。 多个第一端连接到第一连接部分。 第一接触部分插入在任何第一端和第一连接部分之间。 第二电极具有彼此并联的多个第二指状物,第二连接部分和至少第二接触部分。 每个第二手指具有第三端和第四端,并且任何第二手指位于并平行于任何两个第一手指之间。 多个第三端连接到第二连接部分。 第二接触部分插入任何第三端和第二连接部分之间。 第二电极在多个第二端中限定多个六边形单元。 每个六边形单元将其四个侧面共享到其相邻的六边形单元,并且四边包括两个第二指状物和第二结合部分。 每个第二端延伸到每个六边形单元的中心。

    Electrode structure for a light-emitting element

    公开(公告)号:US20050127817A1

    公开(公告)日:2005-06-16

    申请号:US10733408

    申请日:2003-12-12

    CPC classification number: H01L33/38 H01L33/20

    Abstract: An electrode structure for a light-emitting element includes a first electrode and a second electrode. The first electrode has a plurality of first fingers paralleling with each other, a first connective part, and at least a first contact part. Each first finger has a first end and a second end. Pluralities of first ends connect to the first connective part. The first contact part interposes between any first end and the first connective part. The second electrode has a plurality of second fingers paralleling with each other, a second connective part, and at least a second contact part. Each second finger has a third end and a fourth end, and any second finger is between and parallels to any two first fingers. Pluralities of third ends connect to the second connective part. The second contact part interposes between any third end and the second connective part. The second electrode defines a plurality of hexagonal units among a plurality of second ends. Each hexagonal unit shares its four sides to its adjacent hexagonal units, and the four sides include two of the second fingers and the second connective part. Each second end extends to the center of each hexagonal unit.

    Light-emitting device and forming method thereof
    7.
    发明申请
    Light-emitting device and forming method thereof 审中-公开
    发光元件及其形成方法

    公开(公告)号:US20050127374A1

    公开(公告)日:2005-06-16

    申请号:US10735701

    申请日:2003-12-16

    CPC classification number: H01L33/20 H01L33/44

    Abstract: A light-emitting device and forming method thereof are disclosed. The light-emitting device has a rhombus shape and electrode pads on the longer diagonal of the rhombus shape so that the distance between the electrode pads are larger without decreasing the light-emitting area. Furthermore, since the rhombus shape of the LED is formed aligned with the easy crack direction of the substrate, the yield ratio of production is higher. The light-emitting device can be packaged by a flip chip package process.

    Abstract translation: 公开了一种发光器件及其形成方法。 发光装置在菱形的较长对角线上具有菱形和电极焊盘,使得电极焊盘之间的距离更大,而不减少发光面积。 此外,由于LED的菱形形状与基板的易裂纹方向一致,所以生产的成品率更高。 可以通过倒装芯片封装工艺来封装发光器件。

    System and Method for Making Micro LED Display

    公开(公告)号:US20210134878A1

    公开(公告)日:2021-05-06

    申请号:US17120757

    申请日:2020-12-14

    Abstract: By using chip-by-chip, mainly separation technology, micro LED can be made very accurately and efficiently. First, after epitaxial process, the LED epi-wafer is processed into micro LEDs. Second, bonding substrates with driving circuits are provided for the LED epi-wafer. Then, each LED chip is fastened to the substrate chip-by-chip simultaneously or sequentially, and each LED chip may be transferred by using separation technology simultaneously or sequentially. The LED epi-wafer per se can be also provided as LED display substrate.

    Solid State Lighting Device
    9.
    发明申请
    Solid State Lighting Device 审中-公开
    固态照明装置

    公开(公告)号:US20130181243A1

    公开(公告)日:2013-07-18

    申请号:US13462537

    申请日:2012-05-02

    Applicant: Bor-Jen WU

    Inventor: Bor-Jen WU

    Abstract: A solid state lighting device, including: a housing, which has a reflective cup inside; a solid state light source, placed inside the housing; a transparent adhesive material, used to seal the solid state light source in the housing; and a multi-layer fluorescent structure, placed on the transparent adhesive material and having a fluorescent layer or a phosphor layer sandwiched by two transparent adhesive layers, so as to absorb light beams from the solid state light source and then emit light of longer wavelengths.

    Abstract translation: 一种固态照明装置,包括:壳体,其内部具有反射杯; 固态光源,放置在壳体内; 用于密封壳体中固态光源的透明粘合剂材料; 和多层荧光结构,放置在透明粘合剂材料上并具有由两个透明粘合剂层夹持的荧光层或荧光体层,以吸收来自固态光源的光束,然后发射较长波长的光。

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