公开(公告)号：US20080073529A1

公开(公告)日：2008-03-27

申请号：US11895817

申请日：2007-08-28

Applicant: David Adler

Inventor： David Adler

IPC: G01N23/225

CPC classification number: G01N23/225 ,  H01J37/256 ,  H01J37/28 ,  H01J2237/2803

Abstract: One embodiment relates to an apparatus using electrons for inspection or metrology of a semiconductor substrate. The apparatus includes an electron source, electron lenses, scan deflectors, an objective electron lens, a collection electron lens, a pin-hole filter, de-scan deflectors, and a detector. The collection electron lens is configured to focus the secondary electrons so as to form a secondary electron beam which is focused at a conjugate focal plane, and the pin-hole filter is positioned at the conjugate focal plane. The de-scan deflectors are configured to controllably deflect the secondary electrons so as to counteract an influence of the scan deflectors such that a center portion of the secondary electron beam passes through the filter and a remainder portion of the secondary electron beam is filtered out by the filter. Other embodiments and features are also disclosed.

Abstract translation: 一个实施例涉及一种使用电子进行半导体衬底检查或计量的设备。 该装置包括电子源，电子透镜，扫描偏转器，物镜电子透镜，收集电子透镜，针孔滤光器，去扫描偏转器和检测器。 收集电子透镜被配置为聚焦二次电子，以形成聚焦在共轭焦平面上的二次电子束，并且针孔滤光器位于共轭焦平面。 去扫描偏转器被配置为可控地偏转二次电子，以抵消扫描偏转器的影响，使得二次电子束的中心部分通过滤光器，并且二次电子束的剩余部分被 过滤器。 还公开了其它实施例和特征。

公开(公告)号：US07205554B2

公开(公告)日：2007-04-17

申请号：US11127213

申请日：2005-05-12

Applicant: Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

Inventor： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC: H01J37/256 ,  G21N23/225

CPC classification number: H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

公开(公告)号：US20060202119A1

公开(公告)日：2006-09-14

申请号：US11198780

申请日：2005-08-05

Applicant: Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

Inventor： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

IPC: G01N23/00

CPC classification number: H01J37/256 ,  G01R31/307 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/24564

Abstract: A system and method is disclosed for obtaining information regarding one or more contact and/or via holes on a semiconductor wafer. In one embodiment, the method obtains information regarding one or more holes (for example, via or contact) that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer. The method of this embodiment comprises irradiating the one or more holes with an electron beam; and determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam.

Abstract translation: 公开了一种用于获得关于半导体晶片上的一个或多个接触和/或通孔的信息的系统和方法。 在一个实施例中，该方法获得关于设置在半导体晶片中或设置在设置在半导体晶片上或上方的层中的一个或多个孔（例如，通孔或接触）的信息。 该实施例的方法包括用电子束照射一个或多个孔; 以及使用表示响应于用电子束照射所述一个或多个孔而产生的衬底电流的量的数据来确定与所述一个或多个孔的底部直径或底部圆周有关的信息。

公开(公告)号：US20060186337A1

公开(公告)日：2006-08-24

申请号：US11230642

申请日：2005-09-21

Applicant: Michio Hatano ,  Sukehiro Ito ,  Shinichi Tomita ,  Junichi Katane

Inventor： Michio Hatano ,  Sukehiro Ito ,  Shinichi Tomita ,  Junichi Katane

IPC: H01J37/28

CPC classification number: H01J37/256 ,  H01J37/244 ,  H01J2237/2444 ,  H01J2237/2448 ,  H01J2237/2605 ,  H01J2237/2806

Abstract: A scanning electron microscope includes an irradiation optical system for irradiating an electron beam to a sample; a sample holder for supporting the sample, arranged inside a sample chamber; at least one electric field supply electrode arranged around the sample holder; and an ion current detection electrode.

公开(公告)号：US20050211898A1

公开(公告)日：2005-09-29

申请号：US10508834

申请日：2003-03-28

Applicant: Emmanuel De Chambost ,  Chrystel Hombourger ,  Juan Montero ,  Pierre Monsallut ,  Pierre-Francois Staub

Inventor： Emmanuel De Chambost ,  Chrystel Hombourger ,  Juan Montero ,  Pierre Monsallut ,  Pierre-Francois Staub

IPC: H01J37/252 ,  H01J37/256 ,  G21K7/00

CPC classification number: H01J37/256 ,  H01J2237/047 ,  H01J2237/2561

Abstract: The present invention relates to a device for measuring the X-ray emission produced by an object, or specimen, exposed to an electron beam. The device includes at least one subassembly or electron column, which is used to produce and control the electron beam, and a support for positioning the object measured. It also includes spectral analysis means for analyzing the X-rays emitted by the specimen to be analyzed and optical means for controlling the position of the specimen relative to the beam. The energy of the beam created and the intensity of the electron current obtained are used to meet the sensitivity, resolution and precision requirements demanded by semiconductor manufacturers. The invention applies especially to checking the fabrication of an integrated-circuit wafer.

Abstract translation: 本发明涉及一种用于测量被暴露于电子束的物体或样本产生的X射线发射的装置。 该装置包括用于产生和控制电子束的至少一个子组件或电子柱，以及用于定位被测物体的支撑件。 它还包括用于分析待分析样品发射的X射线的光谱分析装置和用于控制样品相对于光束的位置的光学装置。 所产生的光束的能量和所获得的电子电流的强度用于满足半导体制造商要求的灵敏度，分辨率和精度要求。 本发明特别适用于检查集成电路晶片的制造。

公开(公告)号：US06936817B2

公开(公告)日：2005-08-30

申请号：US10297864

申请日：2001-01-29

Applicant: Hans-Peter Feuerbaum

Inventor： Hans-Peter Feuerbaum

IPC: H01J37/18 ,  H01J37/256 ,  H01J37/28 ,  H01J27/00 ,  H01J37/244 ,  H01J37/317

CPC classification number: H01J37/256 ,  H01J37/18 ,  H01J37/28 ,  H01J2237/2449

Abstract: The invention provides a miniaturized optical column for a charged particle beam apparatus for examining a specimen (14). The column is constituted by, among other things, a charged particle source (2) for providing a beam of charged particles (10); a lens system for guiding the beam of charged particles (10) from the source (2) onto the specimen (14); and a housing (40) which, during operation, is set on beam boost potential.

Abstract translation: 本发明提供了一种用于检查样本（14）的带电粒子束装置的小型化光学柱。 除了别的以外，该柱由用于提供带电粒子束（10）的带电粒子源（2）构成; 用于将来自所述源（2）的带电粒子束（10）引导到所述样本（14）上的透镜系统; 以及在操作期间被设置为光束增强电位的壳体（40）。

公开(公告)号：US06927391B2

公开(公告)日：2005-08-09

申请号：US10878528

申请日：2004-06-29

Applicant: Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

Inventor： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC: G01N1/32 ,  G01N1/28 ,  G01N23/225 ,  G01Q10/00 ,  G01Q30/02 ,  G01Q30/04 ,  G01Q30/16 ,  G01Q30/20 ,  H01J37/20 ,  H01J37/256 ,  H01J37/28 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/66 ,  H04L29/06 ,  H04L29/08

CPC classification number: H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

Abstract translation: 本发明的目的是实现一种用于处理和观察微分样品的方法和装置，其能够以高分辨率，高精度和高产量在水平和垂直方向观察晶片的截面而不分裂任何作为样品的晶片 。 在本发明的装置中，在一个真空容器中包括聚焦离子束光学系统和电子光学系统，并且通过用带电粒子束的成形处理分离包含样品的所需区域的微小样品，并且在那里 被包括用于提取分离的微小样本的操纵器和用于独立于晶片样品台驱动操纵器的操纵器控制器。

公开(公告)号：US06833550B2

公开(公告)日：2004-12-21

申请号：US10643954

申请日：2003-08-20

Applicant: Mitsuo Hayashibara ,  Kishio Hidaka ,  Toshiaki Horiuchi ,  Tadashi Fujieda ,  Yoshimichi Numata ,  Shuuichi Suzuki

Inventor： Mitsuo Hayashibara ,  Kishio Hidaka ,  Toshiaki Horiuchi ,  Tadashi Fujieda ,  Yoshimichi Numata ,  Shuuichi Suzuki

IPC: H01J3700

CPC classification number: H01J37/256 ,  H01J37/02 ,  H01J37/28

Abstract: The disclosure is concerned with an electron microscope comprising a casing for encasing an assembly and a display disposed to the casing. The assembly comprises a vacuum container, a vacuum pump for evacuating the vacuum container, an electron emitter disposed at the upper position of the vacuum vessel, a sample chamber disposed at the lower position of the vacuum container and capable of projecting from the casing and a detector for detecting an electron beam emitted from a sample placed in the sample chamber.

公开(公告)号：US20040183016A1

公开(公告)日：2004-09-23

申请号：US10815817

申请日：2004-04-02

Applicant: HITACHI, LTD.

Inventor： Tetsuya Sawahata ,  Mitsugu Sato

IPC: H01J037/256

CPC classification number: H01J37/256 ,  G01N23/2252 ,  H01J37/141 ,  H01J2237/2561

Abstract: According to the present invention, there are newly provided in a scanning electron microscope with an in-lens system a first low-magnification mode that sets the current of the object lens to be zero or in a weak excitation state, and a second low-magnification mode that sets the current of the object lens to be a value that changes in proportion to the square root of the accelerating voltage. The scanning electron microscope has a configuration wherein normal sample image (secondary electron image) observation is performed in the first low-magnification mode, and it switches the first low-magnification mode to the second low-magnification mode when X-ray analysis is performed. As a result, both sample image (secondary electron image) observation and X-ray analysis can be performed in low-magnification mode.

Abstract translation: 根据本发明，在具有透镜系统的扫描电子显微镜中，新提供将物镜的电流设定为零或弱激励状态的第一低倍率模式， 将物镜的电流设定为与加速电压的平方根成比例地变化的值的倍率模式。 扫描电子显微镜具有在第一低倍率模式下进行正常的样本图像（二次电子图像）观察的结构，并且当执行X射线分析时，将第一低倍率模式切换到第二低倍率模式 。 结果，可以以低倍率模式进行样本图像（二次电子图像）观察和X射线分析。

公开(公告)号：US06794648B2

公开(公告)日：2004-09-21

申请号：US10196577

申请日：2002-07-17

Applicant: Kazutoshi Kaji ,  Takashi Aoyama ,  Shunroku Taya ,  Hiroyuki Tanaka ,  Shigeto Isakozawa

Inventor： Kazutoshi Kaji ,  Takashi Aoyama ,  Shunroku Taya ,  Hiroyuki Tanaka ,  Shigeto Isakozawa

IPC: H01J3726

CPC classification number: G01N23/04 ,  G01N23/20 ,  H01J37/05 ,  H01J37/244 ,  H01J37/256 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/057 ,  H01J2237/24475 ,  H01J2237/24485 ,  H01J2237/24495 ,  H01J2237/2522 ,  H01J2237/2802 ,  H01J2237/2804 ,  H01J2237/2809

Abstract: An object of the present invention is to provide an ultimate analyzer which can display an element distribution image of an object to be analyzed with high contrast to determine the positions of the element distribution with high accuracy, and a scanning transmission electron microscope and a method of analyzing elements using the ultimate analyzer. The present invention exists in an ultimate analyzer comprising a scattered electron beam detector for detecting an electron beam scattered by an object to be analyzed; an electron spectrometer for energy dispersing an electron beam transmitted through the object to be analyzed; an electron beam detector for detecting said dispersed electron beam; and a control unit for analyzing elements of the object to be analyzed based on an output signal of the electron beam detected by the electron beam detector and an output signal of the electron beam detected by the scattered electron beam detector. Further, the present invention exists in a scanning transmission electron microscope comprising the above ultimate analyzer; an electron beam source; an electron beam scanning coil; a scattered electron beam detector; objective lenses; a focusing lens; a magnifying magnetic field lens; and a focus adjusting electromagnetic lens. Furthermore, the ultimate analyzer or the scanning transmission electron microscope may comprises a control unit which makes it possible that both of an image of element distribution and an STEM image detected and formed by the scatted electron beam detector are observed at a time in real time, and the image of element distribution is corrected by the STEM image detected and formed by the scattered electron beam detector.

Abstract translation: 本发明的目的是提供一种能够以高对比度显示待分析物体的元素分布图像，以高精度地确定元件分布的位置的最终分析器，以及扫描透射电子显微镜和 使用最终分析仪分析元素。 本发明存在于包含用于检测由待分析物体散射的电子束的散射电子束检测器的终极分析仪中; 用于能量分散通过待分析物体的电子束的电子光谱仪; 用于检测所述分散的电子束的电子束检测器; 以及控制单元，用于基于由电子束检测器检测的电子束的输出信号和由散射电子束检测器检测的电子束的输出信号来分析待分析物体的元件。 此外，本发明存在于包含上述极限分析仪的扫描透射电子显微镜中; 电子束源; 电子束扫描线圈; 散射电子束检测器; 物镜; 聚焦镜头; 放大磁场透镜; 和聚焦调整电磁透镜。 此外，最终分析器或扫描透射电子显微镜可以包括控制单元，其使得可以实时地观察由散射电子束检测器检测和形成的元件分布的图像和STEM图像两者， 并且通过由散射电子束检测器检测和形成的STEM图像校正元件分布的图像。