公开(公告)号：US09455418B2

公开(公告)日：2016-09-27

申请号：US14468808

申请日：2014-08-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu Ohno ,  Kohei Yokoyama ,  Satoru Idojiri ,  Hisao Ikeda ,  Yasuhiro Jinbo ,  Hiroki Adachi ,  Yoshiharu Hirakata ,  Shingo Eguchi

IPC: B29C63/00 ,  H01L51/52 ,  B32B17/06 ,  H01L51/56 ,  B65G49/06

CPC classification number: B65G49/068 ,  B32B17/06 ,  B32B37/025 ,  B32B38/10 ,  B32B43/006 ,  B32B2457/00 ,  B32B2457/14 ,  B32B2457/20 ,  B65G49/069 ,  B65G2249/04 ,  B65H3/0816 ,  B65H3/48 ,  B65H16/00 ,  B65H35/0006 ,  H01L21/673 ,  H01L21/67333 ,  H01L21/67715 ,  H01L21/68 ,  H01L27/3244 ,  H01L51/5237 ,  H01L51/56 ,  H01L2221/68318 ,  H01L2227/323 ,  Y10T29/53091 ,  Y10T29/5317 ,  Y10T156/1121 ,  Y10T156/1137 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1917 ,  Y10T156/1922 ,  Y10T156/1939 ,  Y10T156/1967

Abstract: An apparatus for supplying a support having a clean surface is provided. Alternatively, an apparatus for manufacturing a stack including a support and a remaining portion of a processed member whose one surface layer is separated is provided. A positioning portion, a slit formation portion, and a peeling portion are included. The positioning portion is provided with a first transfer mechanism of a stacked film including a support and a separator and a table for fixing the stacked film. The slit formation portion is provided with a cutter that can form a slit which does not pass through the separator. The peeling portion is provided with a second transfer mechanism and a peeling mechanism extending the separator and then peeling the separator. In addition, a pretreatment portion activating a support surface is included.

Abstract translation: 提供了一种用于提供具有干净表面的支撑件的装置。 或者，提供一种用于制造包括支撑体的堆叠的装置和其一个表面层被分离的被处理构件的剩余部分。 包括定位部分，狭缝形成部分和剥离部分。 定位部设置有包括支撑体和隔板的层叠膜的第一传送机构和用于固定层叠膜的台。 狭缝形成部设置有能够形成不通过隔板的狭缝的切割器。 剥离部设置有第二传送机构和剥离机构，其使隔板延伸，然后剥离隔膜。 此外，包括激活支撑表面的预处理部分。

公开(公告)号：US09436036B2

公开(公告)日：2016-09-06

申请号：US14749962

申请日：2015-06-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro Jinbo ,  Masafumi Morisue ,  Hajime Kimura ,  Shunpei Yamazaki

IPC: H01L29/18 ,  H01L33/00 ,  G02F1/1335 ,  H01L27/12 ,  H01L27/15 ,  H01L33/62 ,  G02F1/1333

CPC classification number: H01L27/1266 ,  G02F1/133305 ,  G02F1/133603 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/62 ,  H01L51/003 ,  H01L2221/68318 ,  H01L2221/68386

Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

公开(公告)号：US09082679B2

公开(公告)日：2015-07-14

申请号：US14450967

申请日：2014-08-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuhiro Jinbo ,  Masafumi Morisue ,  Hajime Kimura ,  Shunpei Yamazaki

IPC: H01L29/18 ,  H01L33/00 ,  H01L27/15 ,  H01L27/12 ,  H01L33/62

CPC classification number: H01L27/1266 ,  G02F1/133305 ,  G02F1/133603 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/62 ,  H01L51/003 ,  H01L2221/68318 ,  H01L2221/68386

Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

Abstract translation: 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。 根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射，并且元件层从第一衬底剥离。

公开(公告)号：US08945962B2

公开(公告)日：2015-02-03

申请号：US13845443

申请日：2013-03-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshiyuki Kurokawa ,  Yasuhiro Jinbo ,  Satoshi Kobayashi ,  Daisuke Kawae

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/04 ,  H01L29/786 ,  H01L49/02 ,  H01L29/417 ,  H01L29/49

CPC classification number: H01L29/66765 ,  H01L28/40 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/78696

Abstract: In a method for manufacturing a semiconductor device including a transistor and a conductive film over a substrate, a first insulating film and a second insulating film are formed over the transistor and the conductive film sequentially. Then, an opening and a recessed portion are formed in the second insulating film using one multi-tone photomask, wherein the opening is deeper than the recessed portion in the second insulating film. By using the opening, a first contact hole exposing one of the electrodes of the transistor is formed through the first and second insulating films and, by using the recessed portion, a second contact hole exposing the first insulating film is formed through the second insulating film. Moreover, an electrode is formed on and in contact with the one of the electrodes in the first contact hole and the first insulating film in the second contact hole.

Abstract translation: 在衬底上制造包括晶体管和导电膜的半导体器件的方法中，依次在晶体管和导电膜上形成第一绝缘膜和第二绝缘膜。 然后，使用一个多色光掩模在第二绝缘膜中形成开口和凹部，其中开口比第二绝缘膜中的凹部更深。 通过使用开口，通过第一和第二绝缘膜形成暴露晶体管的一个电极的第一接触孔，并且通过使用凹部，暴露第一绝缘膜的第二接触孔通过第二绝缘膜形成 。 此外，在第一接触孔中的一个电极和第二接触孔中的第一绝缘膜上形成电极并与其接触。

公开(公告)号：US20130302937A1

公开(公告)日：2013-11-14

申请号：US13888858

申请日：2013-05-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuhiro Jinbo ,  Shingo Eguchi ,  Shunpei Yamazaki

IPC: H01L51/50 ,  H01L21/67

CPC classification number: C23C14/24 ,  C23C14/042 ,  C23C14/12 ,  C23C14/562 ,  C23C14/568 ,  C23C14/5873 ,  H01J37/32568 ,  H01J37/32834 ,  H01J2237/332 ,  H01J2237/335 ,  H01L21/67 ,  H01L27/1266 ,  H01L51/001 ,  H01L51/0058 ,  H01L51/0072 ,  H01L51/50 ,  H01L51/56

Abstract: The inventors have reached the idea of a film formation apparatus including a film formation chamber, a removal chamber, two sluice valves provided apart from each other between the film formation chamber and the removal chamber, and a shadow mask transfer mechanism. The film formation chamber includes an evaporation source, and the removal chamber includes a parallel plate plasma source and a shadow mask stage. The film formation apparatus has a film formation mode in which a shadow mask overlapped with an object is transferred by the shadow mask transfer mechanism and a film is formed on the object; and a cleaning mode in which the shadow mask is irradiated with plasma by the plasma source, the shadow mask being held between an upper electrode and a lower electrode by the shadow mask stage.

Abstract translation: 本发明人已经达到了一种成膜装置，其包括成膜室，去除室，在成膜室和去除室之间彼此分开设置的两个闸阀，以及荫罩传送机构。 成膜室包括蒸发源，去除室包括平行板等离子体源和荫罩台。 成膜装置具有成膜模式，其中与物体重叠的荫罩通过荫罩转印机构转印并且在物体上形成膜; 以及通过等离子体源等离子体照射荫罩的清洁模式，荫罩通过荫罩平台保持在上电极和下电极之间。