公开(公告)号：US20250162082A1

公开(公告)日：2025-05-22

申请号：US19007977

申请日：2025-01-02

Applicant: Gigaphoton Inc.

Inventor： Yasufumi KAWASUJI ,  Osamu WAKABAYASHI

IPC: B23K26/38 ,  B23K26/06 ,  B23K26/14 ,  B23K101/42 ,  B23K103/00

Abstract: A laser processing method according to one aspect of the present disclosure includes depositing a product generated from a first glass substrate at a processing position of a second glass substrate by irradiating the first glass substrate with a first ultraviolet pulse laser beam under a first irradiation condition, and forming a hole by irradiating the processing position where the product is deposited with a second ultraviolet pulse laser beam under a second irradiation condition different from the first irradiation condition.

公开(公告)号：US20240429679A1

公开(公告)日：2024-12-26

申请号：US18827321

申请日：2024-09-06

Applicant: Gigaphoton Inc.

Inventor： Seiji NOGIWA ,  Osamu WAKABAYASHI

IPC: H01S5/0625 ,  H01S5/00 ,  H01S5/06 ,  H01S5/125

Abstract: A laser apparatus includes a first wavelength variable semiconductor laser that outputs first continuous-wave laser light; a first amplifier that pulses and amplifies the first laser light and outputs first pulse laser light; a wavelength conversion system that converts a wavelength of the first pulse laser light and outputs second pulse laser light; an excimer amplifier that amplifies the second pulse laser light and outputs third pulse laser light; a monitor module that measures a wavelength of the third pulse laser light; and a processor that periodically changes a target wavelength of the third pulse laser light and controls a current for changing the wavelength of the laser light from the first semiconductor laser such that the wavelength of the third pulse laser light becomes the target wavelength based on a measured value of the wavelength of the third pulse laser light output at the same target wavelength.

公开(公告)号：US20230187286A1

公开(公告)日：2023-06-15

申请号：US18165288

申请日：2023-02-06

Applicant: Gigaphoton Inc.

Inventor： Toshihiro OGA ,  Koichi FUJII ,  Osamu WAKABAYASHI

IPC: H01L21/66 ,  H01L21/268

CPC classification number: H01L22/12 ,  H01L21/268

Abstract: An electronic device manufacturing method according to an aspect of the present disclosure includes determining magnification in a scanning width direction based on a pattern formed in a scanning field of a wafer; measuring a wafer height at points in the scanning field and determining an average value of the wafer height in the scanning width direction; determining a wavelength range of a pulse laser beam in which an allowable CD value is obtained in a case of a focus position based on the average value of the wafer height; determining a first wavelength of the pulse laser beam at which the determined magnification is obtained and determining a target wavelength based on the wavelength range and the first wavelength; outputting a pulse laser beam controlled to have the target wavelength for each pulse; and performing exposure of the scanning field of the wafer to the pulse laser beam.

公开(公告)号：US20230098685A1

公开(公告)日：2023-03-30

申请号：US18061857

申请日：2022-12-05

Applicant: Gigaphoton Inc.

Inventor： Koichi FUJII ,  Osamu WAKABAYASHI

IPC: H01S5/12 ,  H01S5/50 ,  G03F7/20 ,  H01S3/225

Abstract: An exposure method includes reading data indicating a relation between parameters and a wavelength difference between a first pulse laser beam and a second pulse laser beam, the parameters being related to exposure conditions under which a semiconductor wafer is exposed to a plurality of pulse laser beams including the first and second pulse laser beams, determining a target value of the wavelength difference based on the data and command values of the parameters; determining a first wavelength of the first pulse laser beam and a second wavelength of the second pulse laser beam based on the target value; outputting a wavelength setting signal to a laser apparatus to cause emission of the pulse laser beams including the first pulse laser beam having the first wavelength and the second pulse laser beam having the second wavelength; and exposing the semiconductor wafer to the pulse laser beams.

公开(公告)号：US20220373893A1

公开(公告)日：2022-11-24

申请号：US17817182

申请日：2022-08-03

Applicant: Gigaphoton Inc.

Inventor： Koichi FUJII ,  Osamu WAKABAYASHI

IPC: G03F7/20 ,  H01S3/11 ,  H01S3/13 ,  H01S3/225 ,  H01S3/0941 ,  H01S3/094 ,  H01S3/16

Abstract: An exposure system according to an aspect of the present disclosure includes a laser apparatus emitting a pulse laser beam, an illumination optical system guiding the pulse laser beam to a reticle, a reticle stage moving the reticle, and a processor controlling emission of the pulse laser beam and movement of the reticle. The exposure system performs scanning exposure of a semiconductor substrate by irradiating the reticle with the pulse laser beam. The reticle has first and second regions. The processor instructs the laser apparatus about, based on proximity effect characteristics corresponding to the first and second regions, a value of a control parameter of the pulse laser beam corresponding to each region so that the laser apparatus emits the pulse laser beam with which a difference of the proximity effect characteristic of each region from a reference proximity effect characteristic is in an allowable range.

公开(公告)号：US20210333788A1

公开(公告)日：2021-10-28

申请号：US17366586

申请日：2021-07-02

Applicant: Gigaphoton Inc.

Inventor： Kunihiko ABE ,  Yuji MINEGISHI ,  Satoru KIKUCHI ,  Osamu WAKABAYASHI

IPC: G05B23/02 ,  G06N20/00 ,  G06N3/02

Abstract: A machine learning method according to a viewpoint of the present disclosure is a machine learning method for creating a learning model configured to estimate the life of a consumable of a laser apparatus, the method including acquiring first life-related information containing data on a parameter relating to the life of the consumable, the data recorded in correspondence with different numbers of oscillation pulses during a period from the start of use of the consumable to replacement thereof, dividing the first life-related information into a plurality of levels each representing the degree of degradation of the consumable in accordance with the numbers of oscillation pulses to create training data, creating the learning model by performing machine learning using the created training data, and saving the created learning model.

公开(公告)号：US20210167568A1

公开(公告)日：2021-06-03

申请号：US17153513

申请日：2021-01-20

Applicant: Gigaphoton Inc.

Inventor： Hiroshi UMEDA ,  Osamu WAKABAYASHI

IPC: H01S3/097 ,  H01S3/0971 ,  H01S3/225 ,  H01S3/036 ,  H01S3/134 ,  H01S3/0975 ,  H01S3/104

Abstract: A discharge excitation gas laser device includes: first and second discharge electrodes disposed to face each other; a plurality of peaking capacitors connected to the first discharge electrode; a charger; a plurality of pulse power modules, each one of the pulse power modules including a charging capacitor to which a charged voltage is applied from the charger, a pulse compression circuit that pulse-compresses and outputs electrical energy stored in the charging capacitor as an output pulse to a corresponding peaking capacitor, and a switch disposed between the charging capacitor and the pulse compression circuit; a plurality of output pulse sensors, each one of the output pulse sensors detecting an output pulse output by a corresponding pulse power module; and a control unit configured to control, based on a detection result of each of the output pulse sensor, a timing of a switch signal to be input to a corresponding switch.

公开(公告)号：US20200290156A1

公开(公告)日：2020-09-17

申请号：US16889791

申请日：2020-06-01

Applicant: Gigaphoton Inc.

Inventor： Akira SUWA ,  Kouji KAKIZAKI ,  Masakazu KOBAYASHI ,  Osamu WAKABAYASHI

IPC: B23K26/382 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/06 ,  B23K26/04 ,  B23K26/03

Abstract: A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light includes: A. a positioning step of performing positioning so that a transfer position of a transfer image is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in an optical axis direction; B. an irradiation condition acquisition step; C. a determination step of determining whether a maximum fluence of a pulse laser beam at the surface of the transparent material is within a predetermined range based on irradiation conditions; and D. a control step of allowing irradiation with the pulse laser beam when the maximum fluence is determined to be in the predetermined range.

公开(公告)号：US20200209760A1

公开(公告)日：2020-07-02

申请号：US16812784

申请日：2020-03-09

Applicant: Gigaphoton Inc.

Inventor： Koji KAKIZAKI ,  Masakazu KOBAYASHI ,  Akira SUWA ,  Osamu WAKABAYASHI

IPC: G03F7/20 ,  H01S3/225 ,  H01S3/11

Abstract: A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.

公开(公告)号：US20200209444A1

公开(公告)日：2020-07-02

申请号：US16814384

申请日：2020-03-10

Applicant: Gigaphoton Inc.

Inventor： Osamu WAKABAYASHI ,  Yoshiyuki HONDA

IPC: G02B5/08 ,  G03F1/24 ,  G03F1/52 ,  G03F1/58

Abstract: A mirror for extreme ultraviolet light includes: a substrate (41); a multilayer film (42) provided on the substrate and configured to reflect extreme ultraviolet light; and a capping layer (53) provided on the multilayer film, and the capping layer includes a first layer (61) containing an oxide of a metal, and a second layer (62) arranged between the first layer and the multilayer film and containing at least one of a boride of the metal and a nitride of the metal.