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公开(公告)号：US20220390851A1
公开(公告)日：2022-12-08
申请号：US17818174
申请日：2022-08-08
Applicant: Gigaphoton Inc.
Inventor： Koichi FUJII , Osamu WAKABAYASHI , Toshihiro OGA
IPC: G03F7/20
Abstract: An exposure method includes reading data representing a relationship between a first parameter relating to an energy ratio between energy of first pulsed laser light having a first wavelength and energy of second pulsed laser light having a second wavelength longer than the first wavelength and a second parameter relating to a sidewall angle of a resist film that is the angle of a sidewall produced when the resist film is exposed to the first pulsed laser light and the second pulsed laser light, and determining a target value of the first parameter based on the data and a target value of the second parameter; and exposing the resist film to the first pulsed laser light and the second pulsed laser light by controlling a narrowed-line gas laser apparatus to output the first pulsed laser light and the second pulsed laser light based on the target value of the first parameter.
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公开(公告)号：US20230352900A1
公开(公告)日：2023-11-02
申请号：US18348518
申请日：2023-07-07
Applicant: Gigaphoton Inc.
Inventor： Koichi FUJII , Osamu WAKABAYASHI
IPC: H01S3/1055 , G03F7/20 , H01S3/139
CPC classification number: H01S3/1055 , G03F7/20 , H01S3/139
Abstract: A laser apparatus includes a grating system; an actuator system configured to adjust a first incident angle on the grating system and a second incident angle on the grating system, the first incident angle being an angle of a first part of an optical beam incident on the grating system, the second incident angle being an angle of a second part of the optical beam incident on the grating system; and a processor configured to control the actuator system to periodically vary the first and second incident angles so that the first and second incident angles are different from each other in at least one of phase and variation range.
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公开(公告)号：US20220371121A1
公开(公告)日：2022-11-24
申请号：US17817197
申请日：2022-08-03
Applicant: Gigaphoton Inc.
Inventor： Koichi FUJII , Osamu WAKABAYASHI
IPC: B23K26/046 , B23K26/082 , B23K26/0622 , B23K26/03 , B23K26/359
Abstract: An exposure system that performs scanning exposure of a semiconductor substrate by irradiating a reticle with a pulse laser beam includes a laser apparatus configured to emit a pulse laser beam, an illumination optical system through which the pulse laser beam is guided to the reticle, a reticle stage, and a processor configured to control emission of the pulse laser beam from the laser apparatus and movement of the reticle by the reticle stage. The reticle includes a region in which multiple kinds of patterns are arranged in a mixed manner in a scanning width direction orthogonal to a scanning direction of the scanning exposure. The processor instructs the laser apparatus about a target wavelength such that the laser apparatus emits the pulse laser beam of a wavelength with which dispersion of best focus positions corresponding to respective patterns of the multiple kinds of patterns is minimum.
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公开(公告)号：US20250149847A1
公开(公告)日：2025-05-08
申请号：US19020350
申请日：2025-01-14
Applicant: Gigaphoton Inc.
Inventor： Koichi FUJII , Osamu WAKABAYASHI
IPC: H01S3/1055 , G03F7/20 , H01S3/08 , H01S3/106
Abstract: A line narrowing device includes a first prism; first and second gratings arranged on the optical path of the light beam having passed through the first prism at positions different in a direction of grooves of either the first grating or the second grating; a beam adjustment optical system arranged on the optical path of the light beam between the first prism and at least one grating of the first and second gratings, and causing a first portion of the light beam to be incident on the first grating and causing a second portion of the light beam to be incident on the second grating; a first actuator adjusting an incident angle of the first portion on the first grating; second actuator adjusting an incident angle of the second portion on the second grating; and a third actuator adjusting an energy ratio of the first and second portions.
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5.发明公开公开(公告)号：US20240329518A1
公开(公告)日：2024-10-03
申请号：US18743805
申请日：2024-06-14
Applicant: Gigaphoton Inc.
Inventor： Koichi FUJII
Abstract: Provided is an optical proximity correction method in consideration of off-axis chromatic aberration produced when a photosensitive substrate is exposed to pulse laser light having center wavelengths. A method for creating a photomask includes scanning a test wafer in a first direction with the pulse laser light via a test mask to pattern the test wafer, measuring a wafer pattern of the patterned test wafer to acquire a measured wafer pattern indicating the result of the measurement in each of divided regions arranged on a surface of the test wafer in a second direction that intersects with the first direction, creating a corrected mask pattern for creating the photomask based on a test mask pattern formed at the test mask, the measured wafer pattern, and a target pattern that is a target wafer pattern at a photosensitive substrate, and creating the photomask based on the corrected mask pattern.
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Patent Agency Ranking
公开(公告)号：US20240219846A1
公开(公告)日：2024-07-04
申请号：US18606012
申请日：2024-03-15
Applicant: Gigaphoton Inc.
Inventor： Koichi FUJII
CPC classification number: G03F7/70633 , G03F7/70358 , H01S3/08009 , H01S3/225
Abstract: An electronic device manufacturing method includes performing scanning exposure in which plural scan fields of a first photosensitive substrate are exposed to pulse laser light having a reference wavelength, measuring overlay errors at plural positions in each of the plural scan fields, calculating the average of the overlay errors at each of the plural positions in scan fields scanned in the same scan direction out of the plural scan fields, calculating the amount of wavelength adjustment with respect to the reference wavelength in such a way that a first overlay error parameter calculated from the averages and distortions produced when the wavelength of the pulse laser light is changed from the reference wavelength is smaller than a second overlay error parameter calculated from the averages, causing a laser apparatus to generate the pulse laser light having a wavelength controlled by using the amount of wavelength adjustment, outputting the pulse laser light to an exposure apparatus, and exposing a second photosensitive substrate to the pulse laser light in the exposure apparatus to manufacture electronic devices.
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公开(公告)号：US20230187286A1
公开(公告)日：2023-06-15
申请号：US18165288
申请日：2023-02-06
Applicant: Gigaphoton Inc.
Inventor： Toshihiro OGA , Koichi FUJII , Osamu WAKABAYASHI
IPC: H01L21/66 , H01L21/268
CPC classification number: H01L22/12 , H01L21/268
Abstract: An electronic device manufacturing method according to an aspect of the present disclosure includes determining magnification in a scanning width direction based on a pattern formed in a scanning field of a wafer; measuring a wafer height at points in the scanning field and determining an average value of the wafer height in the scanning width direction; determining a wavelength range of a pulse laser beam in which an allowable CD value is obtained in a case of a focus position based on the average value of the wafer height; determining a first wavelength of the pulse laser beam at which the determined magnification is obtained and determining a target wavelength based on the wavelength range and the first wavelength; outputting a pulse laser beam controlled to have the target wavelength for each pulse; and performing exposure of the scanning field of the wafer to the pulse laser beam.
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公开(公告)号：US20230098685A1
公开(公告)日：2023-03-30
申请号：US18061857
申请日：2022-12-05
Applicant: Gigaphoton Inc.
Inventor： Koichi FUJII , Osamu WAKABAYASHI
Abstract: An exposure method includes reading data indicating a relation between parameters and a wavelength difference between a first pulse laser beam and a second pulse laser beam, the parameters being related to exposure conditions under which a semiconductor wafer is exposed to a plurality of pulse laser beams including the first and second pulse laser beams, determining a target value of the wavelength difference based on the data and command values of the parameters; determining a first wavelength of the first pulse laser beam and a second wavelength of the second pulse laser beam based on the target value; outputting a wavelength setting signal to a laser apparatus to cause emission of the pulse laser beams including the first pulse laser beam having the first wavelength and the second pulse laser beam having the second wavelength; and exposing the semiconductor wafer to the pulse laser beams.
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公开(公告)号：US20220373893A1
公开(公告)日：2022-11-24
申请号：US17817182
申请日：2022-08-03
Applicant: Gigaphoton Inc.
Inventor： Koichi FUJII , Osamu WAKABAYASHI
Abstract: An exposure system according to an aspect of the present disclosure includes a laser apparatus emitting a pulse laser beam, an illumination optical system guiding the pulse laser beam to a reticle, a reticle stage moving the reticle, and a processor controlling emission of the pulse laser beam and movement of the reticle. The exposure system performs scanning exposure of a semiconductor substrate by irradiating the reticle with the pulse laser beam. The reticle has first and second regions. The processor instructs the laser apparatus about, based on proximity effect characteristics corresponding to the first and second regions, a value of a control parameter of the pulse laser beam corresponding to each region so that the laser apparatus emits the pulse laser beam with which a difference of the proximity effect characteristic of each region from a reference proximity effect characteristic is in an allowable range.
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公开(公告)号：US20250060683A1
公开(公告)日：2025-02-20
申请号：US18940386
申请日：2024-11-07
Applicant: Gigaphoton Inc.
Inventor： Koichi FUJII
Abstract: A photosensitive substrate developing method includes heating a photosensitive substrate exposed by scanning each of a plurality of scan fields included in the photosensitive substrate in a first direction with a pulse laser beam including a plurality of center wavelengths via a photomask so as to have a temperature distribution having a temperature gradient in a second direction intersecting the first direction on a surface of the photosensitive substrate in each of the scan fields, and supplying a developer to the surface of the photosensitive substrate to perform development after heating the photosensitive substrate.
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