公开(公告)号：US20170236705A1

公开(公告)日：2017-08-17

申请号：US15518642

申请日：2016-01-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dong LI ,  Xiaoyong LU ,  Xiaolong LI ,  Zheng LIU ,  Shuai ZHANG ,  Yucheng CHAN ,  Chienhung LIU ,  Chunping LONG

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L21/0268 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L27/1222 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

Abstract: The present application provides a low temperature poly-silicon thin film, a low temperature poly-silicon thin film transistor and manufacturing methods thereof, and a display device. The manufacturing method of a low temperature poly-silicon thin film comprises steps of: forming an amorphous silicon thin film on a base; and performing a laser annealing process on the amorphous silicon thin film by using a mask plate to form a low temperature poly-silicon thin film, wherein the mask plate includes a transmissive region and a shielding region surrounding the transmissive region, and two sides of the shielding region adjacent to the transmissive region are in concave-convex shapes. Performance of the low temperature poly-silicon thin film formed by the manufacturing method of a low temperature poly-silicon thin film in the present application is enhanced.

公开(公告)号：US20160372702A1

公开(公告)日：2016-12-22

申请号：US14770365

申请日：2014-12-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaowei XU ,  Chunping LONG ,  Lei SHI ,  Wenqing XU

IPC: H01L51/52 ,  H01L27/32

CPC classification number: H01L51/5253 ,  H01L27/32 ,  H01L27/3246 ,  H01L51/50 ,  H01L51/52 ,  H01L51/5275

Abstract: An organic light emitting device and a display apparatus are disclosed. The organic light emitting device includes an array substrate and a package substrate (2); on a side of the package substrate (2) facing the array substrate, there is provided a protrusion (7) formed of a first transparent material, a surface of the protrusion (7) is also covered with a transparent layer (8) formed of a second transparent material, and the refractive index of the second transparent material is larger than the refractive index of the first transparent material. With the organic light emitting device, a part of light that is emitted from an organic light-emitting layer (5) and irradiated to a surface of the protrusion (7) is totally reflected and changed in optical paths to decrease incident light totally reflected at a boundary between the package substrate (2) and the outside air, and light that has been changed in optical paths is irradiated out through the package substrate (2) more easily, thereby improving the output efficiency of light.

Abstract translation: 公开了一种有机发光器件和显示装置。 有机发光器件包括阵列衬底和封装衬底（2）; 在封装基板（2）的面向阵列基板的一侧上设置有由第一透明材料形成的突起（7），突起（7）的表面也被透明层（8）覆盖，透明层（8）由 第二透明材料，并且第二透明材料的折射率大于第一透明材料的折射率。 利用有机发光器件，从有机发光层（5）发射并照射到突起（7）的表面的光的一部分在光路中被全反射和变化，以减少全反射的入射光 封装基板（2）和外部空气之间的边界以及光路中已经改变的光被更容易地通过封装基板（2）照射出去，从而提高了光的输出效率。

公开(公告)号：US20160365360A1

公开(公告)日：2016-12-15

申请号：US15095649

申请日：2016-04-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolong LI ,  Huijuan ZHANG ,  Xiaoyong LU ,  Zheng LIU ,  Yucheng CHAN ,  Chunping LONG

IPC: H01L27/12 ,  H01J37/32 ,  H01L21/67 ,  H01L29/786 ,  H01L21/3065

Abstract: The present disclosure discloses a smoothing device, a smoothing method, a thin film transistor, a display substrate and a display device. The smoothing device comprises a cavity, a plasma generating component, a magnetic field generating component, an electric field generating component and a carrier located within the cavity. The plasmas generated by the plasma generating component are subjected to the Lorentz force parallel to the surface of the object to be smoothed under the effect of the magnetic field generated by the magnetic field generating component, and subjected to an electric field force in the direction perpendicular to the surface of the object to be smoothed and pointing to the object to be smoothed under the effect of the electric field generated by the electric field generating component.

Abstract translation: 本公开公开了一种平滑装置，平滑方法，薄膜晶体管，显示基板和显示装置。 平滑装置包括空腔，等离子体产生部件，磁场产生部件，电场产生部件和位于腔内的载体。 由等离子体产生部件产生的等离子体在由磁场产生部件产生的磁场的作用下经受平行于被平衡物体的表面的洛伦兹力，并且在垂直方向上受到电场力 到要平滑的物体的表面，并且在由电场产生部件产生的电场的作用下指向待平滑的物体。

公开(公告)号：US20160300858A1

公开(公告)日：2016-10-13

申请号：US15083646

申请日：2016-03-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaoyong LU ,  Dong LI ,  Zheng LIU ,  Shuai ZHANG ,  Liang SUN ,  Chunping LONG

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/26586 ,  H01L29/66492 ,  H01L29/66537 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

Abstract: The embodiments of the present disclosure provide a polysilicon thin film transistor and manufacturing method thereof, an array substrate, and a display panel. The method for manufacturing a polysilicon thin film transistor comprises: forming, on a substrate, a gate, a source and a drain, and an active layer. Forming the active layer comprises: forming a polysilicon layer on the substrate, which comprises a channel region and extension regions; performing ion injection process in the extension regions to form lightly-doped regions close to the channel region and a source region and a drain region; prior to or following the formation of the lightly-doped regions, employing halo ion injection process to form halo regions at the positions of the channel region which are close to the lightly-doped regions.

Abstract translation: 本公开的实施例提供一种多晶硅薄膜晶体管及其制造方法，阵列基板和显示面板。 制造多晶硅薄膜晶体管的方法包括：在衬底上形成栅极，源极和漏极以及有源层。 形成有源层包括：在衬底上形成多晶硅层，其包括沟道区域和延伸区域; 在所述延伸区域中进行离子注入处理，以形成靠近所述沟道区域和源极区域和漏极区域的轻掺杂区域; 在形成轻掺杂区之前或之后，采用光晕离子注入工艺在靠近轻掺杂区的沟道区的位置形成卤素区。

公开(公告)号：US20140141579A1

公开(公告)日：2014-05-22

申请号：US14086207

申请日：2013-11-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xueyan TIAN ,  Chunping LONG

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02686 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/0734 ,  B23K26/0738 ,  B23K26/083 ,  B23K26/352 ,  B23K2101/42 ,  B23K2103/56 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L29/66757

Abstract: A method of manufacturing a low temperature polysilicon film comprises: providing a substrate on a platform; forming a buffer layer on said substrate; forming an amorphous silicon layer on said buffer layer; and heating and annealing said amorphous silicon layer to allow said amorphous silicon layer to form a polycrystalline silicon layer; wherein a thermal insulating layer is formed on a bottom surface of said substrate or a top surface of the platform, before said buffer layer is formed on said substrate.

Abstract translation: 制造低温多晶硅膜的方法包括：在平台上提供衬底; 在所述衬底上形成缓冲层; 在所述缓冲层上形成非晶硅层; 并且对所述非晶硅层进行加热和退火以允许所述非晶硅层形成多晶硅层; 其中在所述衬底的底表面或所述平台的顶表面之前，在所述衬底上形成所述缓冲层之前，形成绝热层。