公开(公告)号：US11728140B1

公开(公告)日：2023-08-15

申请号：US17588999

申请日：2022-01-31

Applicant: Axcelis Technologies, Inc.

Inventor： Neil J. Bassom ,  Joshua Abeshaus ,  David Sporleder ,  Neil Colvin ,  Joseph Valinski ,  Michael Cristoforo ,  Vladimir Romanov ,  Pradeepa Kowrikan Subrahmnya

IPC: H01J37/26 ,  H01J37/32 ,  H01J37/08

CPC classification number: H01J37/32412 ,  H01J37/08

Abstract: An ion source has an arc chamber defining an arc chamber volume. A reservoir is coupled to the arc chamber, defining a reservoir volume. The reservoir receives a source species to define a liquid within the reservoir volume. A conduit fluidly couples the reservoir volume to the arc chamber volume. First and second openings of the conduit are open to the respective reservoir and arc chamber volume. A heat source selectively heats the reservoir to melt the source species at a predetermined temperature. A liquid control apparatus controls a first volume of the liquid within the reservoir volume to define a predetermined supply of the liquid to the arc chamber volume. The liquid control apparatus is a pressurized gas source fluidly coupled to the reservoir to supply a gas to the reservoir and provide a predetermined amount of liquid to the arc chamber.

公开(公告)号：US11646175B2

公开(公告)日：2023-05-09

申请号：US16791308

申请日：2020-02-14

Applicant: Axcelis Technologies, Inc.

Inventor： James DeLuca ,  Andy Ray ,  Neil Demario ,  Rosario Mollica

IPC: H01J37/317 ,  H01J37/05 ,  H01J37/304 ,  H01J37/244 ,  H01J37/24 ,  H01J37/32

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/243 ,  H01J37/244 ,  H01J37/304 ,  H01J37/32357 ,  H01J2237/24535 ,  H01J2237/31701

Abstract: An ion implantation has an ion source and a mass analyzer configured to form and mass analyze an ion beam. A bending element is positioned downstream of the mass analyzer, and respective first and second measurement apparatuses are positioned downstream and upstream of the bending element and configured to determine a respective first and second ion beam current of the ion beam. A workpiece scanning apparatus scans the workpiece through the ion beam. A controller is configured to determine an implant current of the ion beam at the workpiece and to control the workpiece scanning apparatus to control a scan velocity of the workpiece based on the implant current. The determination of the implant current of the ion beam is based, at least in part, on the first ion beam current and second ion beam current.

公开(公告)号：US20230135525A1

公开(公告)日：2023-05-04

申请号：US17976055

申请日：2022-10-28

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Neil Bassom ,  Joshua Abeshaus

IPC: H01J37/32

Abstract: An ion source has arc chamber having one or more radiation generating features, an arc chamber body enclosing an internal volume, and at least one gas inlet aperture defined therein. A gas source provides a gas such as a source species gas or a halide through the gas inlet aperture. The source species gas can be an aluminum-based ion source material such as dimethylaluminum chloride (DMAC). One or more shields positioned proximate to the gas inlet aperture provide a fluid communication between the gas inlet aperture and the internal volume, minimize a line-of-sight from the one or more radiation generating features to the gas inlet aperture, and substantially prevent thermal radiation from reaching the gas inlet aperture from the one or more radiation generating features.

公开(公告)号：US20230100805A1

公开(公告)日：2023-03-30

申请号：US17491084

申请日：2021-09-30

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom ,  Jonathan David

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/075

Abstract: An ion source has an arc chamber with a first end and a second end. A first cathode at the first end of the arc chamber has a first cathode body and a first filament disposed within the first cathode body. A second cathode at the second end of the arc chamber has a second cathode body and a second filament disposed within the second cathode body. A filament switch selectively electrically couples a filament power supply to each of the first filament and the second filament, respectively, based on a position of the filament switch. A controller controls the position of the filament switch to alternate the electrical coupling of the filament power supply between the first filament and the second filament for a plurality of switching cycles based on predetermined criteria. The predetermined criteria can be a duration of operation of the first filament and second filament.

公开(公告)号：US20230038565A1

公开(公告)日：2023-02-09

申请号：US17881833

申请日：2022-08-05

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Jen ,  James S. DeLuca ,  William Bintz

IPC: H01J37/317 ,  H01J37/08 ,  H01J37/20

Abstract: An ion implantation system and method that selectively varies an ion beam energy to a workpiece in sequential passes thereof in front of the beam. The implantation system has an ion source for generating the ion beam and an acceleration/deceleration stage for varying the energy of the ion beam based on an electrical bias supplied to the acceleration deceleration stage. A workpiece support is provided immediately downstream of the acceleration/deceleration stage to support a workpiece through the selectively varied energy ion beam, and can be thermally controlled to control a temperature of the workpiece during the variation of energy of the beam. The energy can be varied while the workpiece is positioned in front of the beam, and a controller can control the electrical bias to control the variation in energy of the ion beam, where a plurality of process recipes can be attained during a single positioning of the workpiece on the workpiece support.

公开(公告)号：US11545330B2

公开(公告)日：2023-01-03

申请号：US17318325

申请日：2021-05-12

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Paul Silverstein ,  Neil Bassom ,  Marvin Farley ,  David Sporleder

IPC: H01J27/02 ,  H01J27/08

Abstract: An ion source has an arc chamber having first and second ends and an aperture plate to enclose a chamber volume. An extraction aperture is disposed between the first and second ends. A cathode is near the first end of the arc chamber, and a repeller is near the second end. A generally U-shaped first bias electrode is on a first side of the extraction aperture within the chamber volume. A generally U-shaped second bias electrode is on a second side of the extraction aperture within the chamber volume, where the first and second bias electrodes are separated by a first distance proximate to the extraction aperture and a second distance distal from the extraction aperture. An electrode power supply provides a first and second positive voltage to the first and second bias electrodes, where the first and second positive voltages differ by a predetermined bias differential.

公开(公告)号：US20220367138A1

公开(公告)日：2022-11-17

申请号：US17318325

申请日：2021-05-12

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Paul Silverstein ,  Neil Bassom ,  Marvin Farley ,  David Sporleder

IPC: H01J27/02 ,  H01J27/08

Abstract: An ion source has an arc chamber having first and second ends and an aperture plate to enclose a chamber volume. An extraction aperture is disposed between the first and second ends. A cathode is near the first end of the arc chamber, and a repeller is near the second end. A generally U-shaped first bias electrode is on a first side of the extraction aperture within the chamber volume. A generally U-shaped second bias electrode is on a second side of the extraction aperture within the chamber volume, where the first and second bias electrodes are separated by a first distance proximate to the extraction aperture and a second distance distal from the extraction aperture. An electrode power supply provides a first and second positive voltage to the first and second bias electrodes, where the first and second positive voltages differ by a predetermined bias differential.

公开(公告)号：US20220319796A1

公开(公告)日：2022-10-06

申请号：US17223360

申请日：2021-04-06

Applicant: Axcelis Technologies, Inc.

Inventor： Steven T. Drummond ,  Neil Colvin ,  Paul Silverstein

IPC: H01J37/08 ,  H01L21/225 ,  H01J27/14 ,  H01J37/317

Abstract: An ion source has an arc chamber having one or more arc chamber walls defining and interior region of the arc chamber. A cathode electrode is disposed along an axis. A repeller has a repeller shaft and a ceramic target member separated by a gap. The repeller shaft is not in electrical or mechanical contact with the target member, and the repeller shaft is configured to indirectly heat the target member. The target member, can be a cylinder encircling the repeller shaft, where the gap separates the cylinder from the repeller shaft. A top cap can enclose the cylinder can be separated from a top repeller surface of the repeller shaft by the gap. A target hole can be in the top cap. The target member can be supported by a bottom liner of the arc chamber or a support member mechanically and electrically coupled to the repeller shaft.

公开(公告)号：US20220139662A1

公开(公告)日：2022-05-05

申请号：US17339085

申请日：2021-06-04

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Neil Bassom ,  Xiao Xu

IPC: H01J27/22 ,  H01J37/08

Abstract: An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.

公开(公告)号：US11276543B2

公开(公告)日：2022-03-15

申请号：US16953509

申请日：2020-11-20

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K Colvin ,  Tseh-Jen Hsieh ,  Richard Rzeszut ,  Wendy Colby

IPC: H01J37/08 ,  H01J37/317 ,  H01L21/265

Abstract: A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source.