公开(公告)号：US20230038565A1

公开(公告)日：2023-02-09

申请号：US17881833

申请日：2022-08-05

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Jen ,  James S. DeLuca ,  William Bintz

IPC: H01J37/317 ,  H01J37/08 ,  H01J37/20

Abstract: An ion implantation system and method that selectively varies an ion beam energy to a workpiece in sequential passes thereof in front of the beam. The implantation system has an ion source for generating the ion beam and an acceleration/deceleration stage for varying the energy of the ion beam based on an electrical bias supplied to the acceleration deceleration stage. A workpiece support is provided immediately downstream of the acceleration/deceleration stage to support a workpiece through the selectively varied energy ion beam, and can be thermally controlled to control a temperature of the workpiece during the variation of energy of the beam. The energy can be varied while the workpiece is positioned in front of the beam, and a controller can control the electrical bias to control the variation in energy of the ion beam, where a plurality of process recipes can be attained during a single positioning of the workpiece on the workpiece support.