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71.发明申请公开(公告)号：US20170294318A1
公开(公告)日：2017-10-12
申请号：US15513027
申请日：2014-09-30
IPC分类号： H01L21/31 , H01L21/67 , C23C16/34 , C23C16/455 , H01L21/02
摘要： A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.
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公开(公告)号：US20170292188A1
公开(公告)日：2017-10-12
申请号：US15632678
申请日：2017-06-26
IPC分类号： C23C16/455 , H01L21/205 , H01L21/677 , C23C16/44
CPC分类号： C23C16/45502 , C23C16/4401 , C23C16/4412 , C23C16/54 , H01L21/205 , H01L21/67109 , H01L21/67739
摘要： A substrate processing apparatus includes: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region, wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.
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73.发明授权公开(公告)号：US09786493B2
公开(公告)日：2017-10-10
申请号：US14778170
申请日：2014-03-19
发明人： Tatsushi Ueda , Junichi Tanabe , Katsuhiko Yamamoto , Yuki Taira , Naofumi Ohashi , Hideharu Itatani
IPC分类号： H01L21/02 , C23C16/455 , C23C16/458 , C23C16/52 , C23C16/40 , C23C16/44 , C23C16/509 , H01L21/687 , H01J37/32 , C23C16/56 , G03F7/20 , G03F7/32
CPC分类号： H01L21/0228 , C23C16/401 , C23C16/4412 , C23C16/45538 , C23C16/45542 , C23C16/45551 , C23C16/45557 , C23C16/45559 , C23C16/4584 , C23C16/509 , C23C16/52 , C23C16/56 , G03F7/20 , G03F7/32 , H01J37/32091 , H01J37/32449 , H01J37/32541 , H01J37/32568 , H01J37/32752 , H01J37/32779 , H01J37/32834 , H01J37/32899 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： A semiconductor device manufacturing method, including: mounting substrates on a mounting table within a processing chamber along a rotation direction of the table; starting to supply a first-element-containing gas to a first region in the chamber along the rotation direction, while rotating the table and exhausting the processing chamber; starting to supply a second-element-containing gas to a second region in the chamber; starting to generate, by a plasma generating unit in the second region, plasma of the second-element-containing gas in the second region to have a first activity; and forming a thin film containing first and second elements on the substrates by rotating the table to cause the substrates to sequentially pass through the first and second regions in turn so that a first-element-containing layer is formed in the first region and is modified in the second region by generating plasma having a second activity higher than the first activity.
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74.发明申请公开(公告)号：US20170289912A1
公开(公告)日：2017-10-05
申请号：US15510757
申请日：2015-09-29
发明人： Takahito ISHII , Takekazu YOSHINAGA
CPC分类号： H04W52/0235 , H04B1/40 , H04L1/00 , H04L1/20 , H04L1/22 , H04M1/73 , H04W24/08 , H04W52/0274 , H04W88/06 , Y02D70/00 , Y02D70/40
摘要： In a communication control method for a communication terminal device including a plurality of communication units corresponding to different communication schemes or communication systems to perform communication in parallel, when a first communication unit performs transmission, transmission/reception of another communication unit is stopped. Then, a transmission/reception stop duration of the another communication unit is set to be equal to or less than a predetermined number of synchronization protection stages.
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公开(公告)号：US09761456B2
公开(公告)日：2017-09-12
申请号：US14947523
申请日：2015-11-20
IPC分类号： H01L21/44 , H01L21/28 , C23C16/30 , C23C16/455
CPC分类号： H01L21/28088 , C23C16/30 , C23C16/45529
摘要： A method of manufacturing a semiconductor device includes (a) providing a substrate and (b) forming a film including a first element, a second element and a third element in a same group as the second element on the substrate by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a halogen-based source gas including the first element to the substrate; (b-2) supplying a first reactive gas including the second element and reactive with the halogen-based source gas; and (b-3) supplying a second reactive gas including the third element without mixing the second reactive gas with the first reactive gas, wherein the second reactive gas is reactive with the halogen-based source gas and unreactive with the first reactive gas.
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公开(公告)号：US09742595B2
公开(公告)日：2017-08-22
申请号：US15463615
申请日：2017-03-20
发明人： Kei Ito
CPC分类号： H04L25/03019 , H03M13/39 , H03M13/3905 , H03M13/4146 , H04L1/005 , H04L1/0071 , H04L5/0007 , H04L25/0232 , H04L25/03171 , H04L2025/03414
摘要： When a channel between a transmission apparatus and a reception apparatus is distorted by multipath fading or other reasons, linear interpolation between pilot subcarriers produces a large estimation error, resulting in an increase in an equalization error and a decrease in reception performance. The present invention allows feedback of a signal that undergoes error correction, reduction in the channel estimation error through repeated channel estimation, and improvement in the reception performance.
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77.发明授权公开(公告)号：US09735006B2
公开(公告)日：2017-08-15
申请号：US14791990
申请日：2015-07-06
发明人： Atsushi Sano , Yoshiro Hirose
IPC分类号： H01L21/469 , H01L21/02 , C23C16/30 , C23C16/455 , C23C16/56 , C23C16/52 , H01J37/32
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/45527 , C23C16/45529 , C23C16/45531 , C23C16/45544 , C23C16/45546 , C23C16/52 , C23C16/56 , H01J37/32449 , H01L21/02167 , H01L21/02274
摘要： A method of manufacturing a semiconductor device is disclosed. The method includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate; and forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer.
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78.发明授权公开(公告)号：US09732426B2
公开(公告)日：2017-08-15
申请号：US14452857
申请日：2014-08-06
发明人： Satoshi Shimamoto , Yoshiro Hirose , Atsushi Sano
CPC分类号： C23C16/45553 , C23C16/36 , C23C16/401 , C23C16/45542 , C23C16/45546 , C23C16/52 , H01J37/32449 , H01J37/32779 , H01L21/02126 , H01L21/02167 , H01L21/02211 , H01L21/02274 , H01L21/0228
摘要： According to the present disclosure, a film containing carbon added at a high concentration is formed with high controllability. A method of manufacturing a semiconductor device includes forming a film containing silicon, carbon and a predetermined element on a substrate by performing a cycle a predetermined number of times. The predetermined element is one of nitrogen and oxygen. The cycle includes supplying a precursor gas containing at least two silicon atoms per one molecule, carbon and a halogen element and having an Si—C bonding to the substrate, and supplying a modifying gas containing the predetermined element to the substrate.
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公开(公告)号：US09716568B2
公开(公告)日：2017-07-25
申请号：US15022524
申请日：2013-09-26
CPC分类号： H04L1/0618 , H04B1/00 , H04B1/04 , H04B1/06 , H04B3/00 , H04B7/02 , H04L1/0625 , H04L1/0631
摘要： The present invention relates to a radio communication system that provides a transmission technique capable of suppressing degradation of communication quality even in an area other than an interference area of two base station radio waves. Further, the transmission technique and the communication system include implementation of a Differential Space-Time Block Coding (DSTBC) method relating to transmission diversity in radio communication utilizing, for example, base stations with transmission antennas that transmit respective sequence signals of the DSTBC.
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公开(公告)号：US09713171B2
公开(公告)日：2017-07-18
申请号：US15021383
申请日：2014-09-05
摘要： Provided is a wireless communication system that is capable of preventing interference between secondary use systems that do not use a database. The wireless communication system uses a white space for opposing communication between a base station and a terminal station.At startup, the base station transmits a preamble over a cycle that is n-times a frame length (where n is an integer 2 or greater), changes a set frequency channel if ranging is not detected from a terminal station within a fixed time interval, and begins normal operation using the set frequency channel if ranging is detected.At startup, the terminal station detects a preamble within a received signal, changes a set frequency channel if a peak is detected at each frame length, and transmits a ranging signal if peaks are detected for cycles that are n-times the frame length and peaks are not detected for other cycles.
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