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    Multiport photonic device with asymmetric waveguides
    61.
    发明授权
    Multiport photonic device with asymmetric waveguides 有权
    具有不对称波导的多端口光子器件

    公开(公告)号：US09310561B1

    公开(公告)日：2016-04-12

    申请号：US14522415

    申请日：2014-10-23

    Applicant: Aurrion, Inc.

    Inventor： Jonathan Edgar Roth

    IPC: G02B6/26 ,  G02B6/42 ,  G02B6/00 ,  G02B6/27 ,  G02B6/293 ,  G02F1/313 ,  G02B6/12 ,  G02F1/01

    CPC classification number: G02B6/2773 ,  G02B6/126 ,  G02B6/2766 ,  G02B6/2793 ,  G02B6/2932 ,  G02B6/34 ,  G02B6/4213 ,  G02B2006/12061 ,  G02B2006/12078 ,  G02B2006/12147 ,  G02F1/0136 ,  G02F1/3132 ,  G02F1/3133 ,  H01S5/5009

    Abstract: Embodiments describe optical devices including a first waveguide, comprising a first cross-sectional area, to receive a light comprising a first optical mode, and a second waveguide, adjacent to the first waveguide, to receive a light comprising a second optical mode orthogonal to the first optical mode. The second waveguide comprises a second cross-sectional area different than the first waveguide such that an absorption/gain coefficient of the second waveguide for light comprising the second optical mode is equal to an absorption/gain coefficient of the first waveguide for light comprising the first optical mode. The optical devices may comprise modulators, photodetectors, or semiconductor optical amplifiers (SOAs).

    Abstract translation: 实施例描述了包括第一波导的光学器件，其包括第一横截面区域，以接收包括第一光学模式的光和与第一波导相邻的第二波导，以接收包括与第一波导正交的第二光学模式的光 第一光模式。 第二波导包括与第一波导不同的第二横截面积，使得包括第二光学模式的光的第二波导的吸收/增益系数等于第一波导对于包括第一波导的第一波导的吸收/增益系数 光学模式。 光学器件可以包括调制器，光电检测器或半导体光放大器（SOA）。

    System and method for compensating for polarization dependent loss
    62.
    发明授权
    System and method for compensating for polarization dependent loss 有权
    用于补偿偏振相关损耗的系统和方法

    公开(公告)号：US08705167B2

    公开(公告)日：2014-04-22

    申请号：US12868205

    申请日：2010-08-25

    Applicant: Youichi Akasaka

    Inventor： Youichi Akasaka

    IPC: H01S3/13 ,  H04B10/293 ,  H01S3/10

    CPC classification number: H01S3/1308 ,  H01S3/10015 ,  H01S3/1301 ,  H01S3/1305 ,  H01S5/06821 ,  H01S5/5009 ,  H04B10/2507 ,  H04B10/293

    Abstract: In accordance with one embodiment of the present disclosure a system for compensating for polarization dependent loss experienced by an optical signal comprises an optical amplifier configured to amplify an optical signal and having a polarization dependent gain (PDG). The system also comprises a polarization rotator coupled to the amplifier and configured to rotate the polarization of the optical signal before the signal enters the amplifier. The system also comprises a polarization dependent loss (PDL) controller coupled to the amplifier and the rotator. The PDL controller may be configured to determine a post-amplifier PDL of the optical signal as the signal leaves the optical amplifier. The PDL controller may also be configured to control the rotator to rotate the polarization of the optical signal based on the post-amplifier PDL, such that the PDG of the amplifier compensates for the PDL experienced by the optical signal.

    Abstract translation: 根据本公开的一个实施例，用于补偿由光信号经历的偏振相关损耗的系统包括配置成放大光信号并具有偏振相关增益（PDG）的光放大器。 该系统还包括耦合到放大器并被配置为在信号进入放大器之前旋转光信号的偏振的偏振旋转器。 该系统还包括耦合到放大器和旋转器的偏振相关损耗（PDL）控制器。 PDL控制器可以被配置为当信号离开光放大器时确定光信号的后置放大器PDL。 PDL控制器还可以被配置为控制旋转器以基于后置放大器PDL旋转光信号的偏振，使得放大器的PDG补偿由光信号经历的PDL。

    Opto-electronic device
    63.
    发明授权
    Opto-electronic device 有权
    光电器件

    公开(公告)号：US08687269B2

    公开(公告)日：2014-04-01

    申请号：US13572587

    申请日：2012-08-10

    Applicant: Michael Robertson ,  Xin Chen ,  Paul Cannard

    Inventor： Michael Robertson ,  Xin Chen ,  Paul Cannard

    IPC: H01S5/30

    CPC classification number: H01S5/5009 ,  B82Y20/00 ,  H01S5/34366

    Abstract: An optical amplifier has a low polarization dependent gain. The amplifier includes a gain medium including a plurality of adjoining semiconductor layers to provide optical gain wherein the adjoining semiconductor layers define one or more quantum wells for electrons and are operative to provide both direct and indirect electron-hole transitions in the gain medium. A first quantized electron energy level in the conduction band and a first quantized hole energy level in the valence band is located in a first layer. A further first quantized hole energy level in the valence band is located in an adjacent second layer.

    Abstract translation: 光放大器具有低偏振相关增益。 放大器包括增益介质，其包括多个相邻的半导体层以提供光学增益，其中相邻的半导体层限定用于电子的一个或多个量子阱，并且可操作地在增益介质中提供直接和间接的电子 - 空穴跃迁。 导带中的第一量子化电子能级和价带中的第一量子化空穴能级位于第一层中。 价带中另外的第一量子化空穴能级位于相邻的第二层中。

    Quantum dot semiconductor device
    66.
    发明授权
    Quantum dot semiconductor device 有权
    量子点半导体器件

    公开(公告)号：US07829880B2

    公开(公告)日：2010-11-09

    申请号：US12047806

    申请日：2008-03-13

    Applicant: Hiroji Ebe ,  Kenichi Kawaguchi ,  Ken Morito ,  Yasuhiko Arakawa

    Inventor： Hiroji Ebe ,  Kenichi Kawaguchi ,  Ken Morito ,  Yasuhiko Arakawa

    IPC: H01L29/06 ,  H01L31/00

    CPC classification number: H01S5/341 ,  B82Y20/00 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3412 ,  H01S5/5009 ,  H01S2301/04 ,  Y10S438/962

    Abstract: A quantum dot semiconductor device includes an active layer having a plurality of quantum dot layers each including a composite quantum dot formed by stacking a plurality of quantum dots and a side barrier layer formed in contact with a side face of the composite quantum dot. The stack number of the quantum dots and the magnitude of strain of the side barrier layer from which each of the quantum dot layers is formed are set so that a gain spectrum of the active layer has a flat gain bandwidth corresponding to a shift amount of the gain spectrum within a desired operation temperature range.

    Abstract translation: 量子点半导体器件包括具有多个量子点层的有源层，每个量子点层包括通过堆叠多个量子点形成的复合量子点和与复合量子点的侧面接触形成的侧面阻挡层。 每个量子点层形成的量子点的堆叠数量和侧面阻挡层的应变幅度被设定为使得有源层的增益谱具有对应于 增益谱在所需的工作温度范围内。

    SEMICONDUCTOR OPTICAL AMPLIFIER, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR OPTICAL INTEGRATED DEVICE
    67.
    发明申请
    SEMICONDUCTOR OPTICAL AMPLIFIER, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR OPTICAL INTEGRATED DEVICE 有权
    半导体光学放大器，其制造方法和半导体光学集成器件

    公开(公告)号：US20090237780A1

    公开(公告)日：2009-09-24

    申请号：US12403732

    申请日：2009-03-13

    Applicant: Shinsuke TANAKA

    Inventor： Shinsuke TANAKA

    IPC: H01S3/00 ,  H01L21/20

    CPC classification number: H01S5/5009 ,  B82Y20/00 ,  H01S5/3404 ,  H01S5/3434 ,  H01S5/34373

    Abstract: A semiconductor optical amplifier is provided having polarization independent optical amplification characteristics and a flat gain spectrum over a wide wavelength region. In the semiconductor optical amplifier including a multi-quantum well active layer formed of well layers and barrier layers alternately laminated to each other on an InP substrate, the well layers and the barrier layers each have a tensile strain, and the tensile strain of each of the barrier layers is larger than the tensile strain of each of the well layers.

    Abstract translation: 提供了一种半导体光放大器，其具有偏振独立的光放大特性和在宽波长区域上的平坦增益光谱。 在包括在InP衬底上彼此交替层叠的阱层和势垒层的多量子阱有源层的半导体光放大器中，阱层和势垒层各自具有拉伸应变，并且每个的拉伸应变 阻挡层比每个阱层的拉伸应变大。

    Optical semiconductor device and fabrication method therefor
    70.
    发明申请
    Optical semiconductor device and fabrication method therefor 失效

    公开(公告)号：US20060145276A1

    公开(公告)日：2006-07-06

    申请号：US11111995

    申请日：2005-04-22

    Applicant: Shuichi Tomabechi ,  Tsuyoshi Yamamoto

    Inventor： Shuichi Tomabechi ,  Tsuyoshi Yamamoto

    IPC: H01L31/00 ,  H01L21/00

    CPC classification number: H01S5/5009 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/2237 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/3412

    Abstract: An optical semiconductor device such as, for example, a quantum dot SOA and a fabrication method therefor are disclosed wherein an active layer and a current constriction structure can be formed leftwardly and rightwardly symmetrically to minimize the polarization dependency. The fabrication method for an optical semiconductor device includes the steps of forming a semiconductor layer on a semiconductor substrate, forming a groove by removing the semiconductor layer at an opening of a mask, forming a first clad layer in the form of a projection having two symmetrical inclined faces in the groove by selective growth by using the mask as a selective growth mask, forming an active layer on the two inclined faces of the first clad layer, and removing the mask and burying the active layer with a second clad layer.

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