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61.发明授权公开(公告)号：US12025506B2
公开(公告)日：2024-07-02
申请号：US17219433
申请日：2021-03-31
Applicant: STMicroelectronics S.r.l.
Inventor： Massimiliano Pesaturo , Marco Omar Ghidoni
CPC classification number: G01K7/015 , H05K1/181 , H05K2201/10151 , H05K2201/10378 , H05K2201/10515 , H05K2201/1053
Abstract: An ambient temperature sensor is provided that may be coupled to a PCB. The ambient temperature sensor includes a package including a first cap and an insulating structure. The insulating structure is formed of thermally insulating material, and the first cap and the insulating structure delimit a first cavity. A semiconductor device is included and generates an electrical signal indicative of a temperature. The semiconductor device is fixed on top of the insulating structure and arranged within the first cavity. The package may be coupled to the PCB so that the insulating structure is interposed between the semiconductor device and the PCB. The insulating structure delimits a second cavity, which extends below the semiconductor device and is open laterally.
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62.发明公开公开(公告)号：US20240167890A1
公开(公告)日：2024-05-23
申请号：US18387114
申请日：2023-11-06
Applicant: Joy Express Investment Limited
Inventor： TSAI-CHUNG YU , NAN-HUEI LEE
IPC: G01K7/01
CPC classification number: G01K7/015
Abstract: Provided is a measurement system including: a first chip including at least one first PN junction element adapted to sense a temperature of the first chip; and a second chip electrically connected to the first chip to form a first loop including the first PN junction element. The second chip includes a second loop. The second loop includes at least one second PN junction element adapted to sense a temperature of the second chip. The second chip provides multiple currents in the first loop and the second loop to generate voltage signals associated with the temperature of the first chip and the temperature of the second chip according to the first PN junction element and the second PN junction element and thus calculate the temperature difference between the first chip and the second chip. A measurement method applicable to the measurement system is further provided.
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公开(公告)号：US11867571B2
公开(公告)日：2024-01-09
申请号：US17491744
申请日：2021-10-01
Applicant: NXP B.V.
Inventor： Ricardo Pureza Coimbra , Mateus Ribeiro Vanzella
IPC: G01K7/01 , G01K15/00 , H03K17/687
CPC classification number: G01K7/015 , G01K15/005 , H03K17/6872 , G01K7/01
Abstract: A low power temperature detection method, system, and apparatus sense when a temperature threshold is reached by connecting a current conveyor (111) with a startup bias circuit (112) having a first FET (P1) (connected to level shift a reference voltage to provide an input voltage VS1), a first diode-connected BJT (Q0) (connected to generate a base-emitter voltage based on the junction temperature), and a second FET (P2) (connected to level shift the base-emitter voltage), where the startup bias circuit (112) selectively connects the current conveyor (111) to ground to form a closed loop that is activated only when an emitter current at the first diode-connected BJT (Q0) enters a self-turned-on operation region, thereby activating the current conveyor to detect a temperature threshold being reached by the device junction temperature.
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公开(公告)号：US11867570B2
公开(公告)日：2024-01-09
申请号：US17192438
申请日：2021-03-04
Applicant: STMicroelectronics SA
Inventor： Philippe Galy , Renan Lethiecq
IPC: G01K7/01 , G01K7/22 , G01K7/25 , H01L27/12 , H01C7/04 , G05F3/24 , H01C7/00 , H01L29/10 , H01L29/78
CPC classification number: G01K7/01 , G01K7/015 , G01K7/22 , G01K7/226 , G01K7/25 , G05F3/245 , H01C7/008 , H01C7/04 , H01L27/1203 , H01L29/1095 , H01L29/7831
Abstract: An electronic device includes a module that delivers a positive temperature coefficient output voltage at an output terminal. A thermistor includes a first MOS transistor operating in weak inversion mode and having a negative temperature coefficient drain-source resistance and whose source is coupled to the output terminal. A current source coupled to the output terminal imposes the drain-source current of the first transistor.
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公开(公告)号：US20180209854A1
公开(公告)日：2018-07-26
申请号：US15926418
申请日：2018-03-20
Inventor： Emanuel Feldman , Goran N. Marnfeldt
CPC classification number: G01K7/16 , A61N1/36125 , A61N1/3706 , A61N2001/37294 , G01K7/015 , G01K13/002 , H01M10/486
Abstract: Temperature sensing circuitry for an Implantable Medical Device (IMD) is disclosed that can be integrated into integrated circuitry in the IMD and draws very little power, thus enabling continuous temperature monitoring without undue battery depletion. Temperature sensor and threshold setting circuitry produces analog voltage signals indicative of a sensed temperature and at least one temperature threshold. Such circuitry employs a Ptat current reference stage and additional stages, which stages contains resistances that are set based on the desired temperature threshold(s) and to set the voltage range of the sensed temperature. These analog voltages are received at temperature threshold detection circuitry, which produces digital signal(s) indicating whether the sensed temperature has passed the temperature threshold(s). The digital signal(s) are then provided to digital circuitry in the IMD, where they can be stored as a function of time for later review, or used to immediately to control IMD operation.
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Patent Agency Ranking
公开(公告)号：US09958339B2
公开(公告)日：2018-05-01
申请号：US14599745
申请日：2015-01-19
Inventor： Emanuel Feldman , Goran N. Marnfeldt
CPC classification number: G01K7/16 , A61N1/36125 , A61N1/3706 , A61N2001/37294 , G01K7/015 , G01K13/002 , H01M10/486
Abstract: Temperature sensing circuitry for an Implantable Medical Device (IMD) is disclosed that can be integrated into integrated circuitry in the IMD and draws very little power, thus enabling continuous temperature monitoring without undue battery depletion. Temperature sensor and threshold setting circuitry produces analog voltage signals indicative of a sensed temperature and at least one temperature threshold. Such circuitry employs a Ptat current reference stage and additional stages, which stages contains resistances that are set based on the desired temperature threshold(s) and to set the voltage range of the sensed temperature. These analog voltages are received at temperature threshold detection circuitry, which produces digital signal(s) indicating whether the sensed temperature has passed the temperature threshold(s). The digital signal(s) are then provided to digital circuitry in the IMD, where they can be stored as a function of time for later review, or used to immediately to control IMD operation.
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公开(公告)号：US20180038740A1
公开(公告)日：2018-02-08
申请号：US15553195
申请日：2016-02-24
Applicant: OMRON Corporation
Inventor： Shinya NAKAGAWA , Masao SHIMIZU
IPC: G01K7/02
CPC classification number: G01K7/028 , G01J5/12 , G01K7/015 , G01K7/02 , H01L2924/1461
Abstract: Provided is a sensor package that measures an internal temperature of a measurement object. A sensor package includes: a package including a bottomed tubular casing and plural leads substantially parallel to each other, each of the leads piercing the bottomed tubular casing; and a MEMS chip including at least one thermopile that measures a temperature difference in an identical direction. The MEMS chip is disposed in an inner bottom surface of the bottomed tubular casing of the package in a posture in which a measurement direction of the temperature difference measured with the thermopile is substantially orthogonal to a longitudinal direction of each lead.
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公开(公告)号：US20170205366A1
公开(公告)日：2017-07-20
申请号：US15312655
申请日：2015-05-19
Inventor： YAEL NEMIROVSKY
CPC classification number: G01N25/20 , G01K7/01 , G01K7/015 , G01N25/30 , G01N27/16 , G01N33/0031 , H01L21/764
Abstract: A method and a gas sensing device are provided. The gas sensing device may include a bulk and an array of gas sensing elements that are thermally isolated from the bulk, wherein each gas sensing element of a plurality of gas sensing elements of the array comprises (i) a gas reactive element that has a gas dependent temperature parameter; and (ii) a semiconductor temperature sensing element that is thermally coupled to the gas reactive element and is configured to generate detection signals that are responsive to a temperature of the gas reactive element.
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公开(公告)号：US09689750B2
公开(公告)日：2017-06-27
申请号：US14299660
申请日：2014-06-09
Applicant: SK hynix Inc.
Inventor： Sang Ah Hyun , Hee Joon Lim
Abstract: The temperature sensor includes a voltage generator and a temperature code generator. The voltage generator includes a first temperature element having a first resistance value and a second temperature element having a second resistance value and utilizes the first and second temperature elements to generate a temperature voltage signal having a voltage level that varies according to a variation in temperature. The voltage generator generates a reference voltage signal having a substantially constant voltage level regardless of the variation in temperature. The temperature code generator compares a voltage level of the temperature voltage signal with a voltage level of the reference voltage signal to generate a plurality of temperature code signals including information on the variation in temperature based on the comparison.
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公开(公告)号：US20160349118A1
公开(公告)日：2016-12-01
申请号：US15117676
申请日：2015-02-05
Applicant: MICRO CONTROL COMPANY
Inventor： Donald Robert Olson , Daniel Aaron Haapala
CPC classification number: G01K7/01 , G01K7/015 , G01R31/2874
Abstract: A remote diode temperature sensing circuit for use in a burn-in system to sense a temperature of a semiconductor device under test includes a temperature sense circuit and an adapter circuit. The temperature sense circuit is configured to output temperature sense currents (Is) during a temperature sense routine. The adapter circuit is configured to drive mirrored sense currents (Ims), which mirror the temperature sense currents, through a diode of the semiconductor device that is connected to an input/output package pin, and present voltage differences across the diode responsive to the mirrored sense currents to the temperature sense circuit. The temperature sense circuit is configured to discharge a temperature output signal that is indicative of the temperature of the diode based on the voltage differences.
Abstract translation: 用于在老化系统中检测被测半导体器件的温度的远程二极管温度检测电路包括温度检测电路和适配器电路。 温度检测电路被配置为在温度检测程序期间输出温度感测电流（Is）。 适配器电路被配置为通过连接到输入/输出封装引脚的半导体器件的二极管来驱动镜像温度感测电流的镜像检测电流（Ims），并响应于镜像来产生跨二极管的电压差 检测电流到温度检测电路。 温度检测电路被配置为基于电压差来放出指示二极管的温度的温度输出信号。
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