Semiconductor device burn-in temperature sensing

    公开(公告)号:US10126177B2

    公开(公告)日:2018-11-13

    申请号:US15117676

    申请日:2015-02-05

    Abstract: A remote diode temperature sensing circuit for use in a burn-in system to sense a temperature of a semiconductor device under test includes a temperature sense circuit and an adapter circuit. The temperature sense circuit is configured to output temperature sense currents (Is) during a temperature sense routine. The adapter circuit is configured to drive mirrored sense currents (Ims), which mirror the temperature sense currents, through a diode of the semiconductor device that is connected to an input/output package pin, and present voltage differences across the diode responsive to the mirrored sense currents to the temperature sense circuit. The temperature sense circuit is configured to discharge a temperature output signal that is indicative of the temperature of the diode based on the voltage differences.

    SEMICONDUCTOR DEVICE BURN-IN TEMPERATURE SENSING
    2.
    发明申请
    SEMICONDUCTOR DEVICE BURN-IN TEMPERATURE SENSING 审中-公开
    半导体器件温度传感器

    公开(公告)号:US20160349118A1

    公开(公告)日:2016-12-01

    申请号:US15117676

    申请日:2015-02-05

    CPC classification number: G01K7/01 G01K7/015 G01R31/2874

    Abstract: A remote diode temperature sensing circuit for use in a burn-in system to sense a temperature of a semiconductor device under test includes a temperature sense circuit and an adapter circuit. The temperature sense circuit is configured to output temperature sense currents (Is) during a temperature sense routine. The adapter circuit is configured to drive mirrored sense currents (Ims), which mirror the temperature sense currents, through a diode of the semiconductor device that is connected to an input/output package pin, and present voltage differences across the diode responsive to the mirrored sense currents to the temperature sense circuit. The temperature sense circuit is configured to discharge a temperature output signal that is indicative of the temperature of the diode based on the voltage differences.

    Abstract translation: 用于在老化系统中检测被测半导体器件的温度的远程二极管温度检测电路包括温度检测电路和适配器电路。 温度检测电路被配置为在温度检测程序期间输出温度感测电流(Is)。 适配器电路被配置为通过连接到输入/输出封装引脚的半导体器件的二极管来驱动镜像温度感测电流的镜像检测电流(Ims),并响应于镜像来产生跨二极管的电压差 检测电流到温度检测电路。 温度检测电路被配置为基于电压差来放出指示二极管的温度的温度输出信号。

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