公开(公告)号：US08382901B2

公开(公告)日：2013-02-26

申请号：US13153183

申请日：2011-06-03

申请人： Ricky Charles Powell ,  Andrew Kelly Gray ,  Todd Alden Coleman

发明人： Ricky Charles Powell ,  Andrew Kelly Gray ,  Todd Alden Coleman

IPC分类号： C23C16/448 ,  C23C16/455

CPC分类号： H01L21/02636 ,  C23C14/0629 ,  C23C14/228 ,  H01L21/02422 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/0262 ,  Y10T137/0318

摘要： A method and apparatus for depositing a film on a substrate includes introducing a material and a carrier gas into a heated chamber. The material may be a semiconductor material, such as a cadmium chalcogenide. A resulting mixture of vapor and carrier gas containing no unvaporized material is provided. The mixture of vapor and carrier gas are remixed to achieve a uniform vapor/carrier gas composition, which is directed toward a surface of a substrate, such as a glass substrate, where the vapor is deposited as a uniform film.

公开(公告)号：US08343797B2

公开(公告)日：2013-01-01

申请号：US12681532

申请日：2008-09-17

申请人： Carlo Taliani ,  Petr Nozar

发明人： Carlo Taliani ,  Petr Nozar

IPC分类号： H01L21/00

CPC分类号： H01L31/1828 ,  C23C14/0629 ,  C23C14/30 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02557 ,  H01L21/02562 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  Y02E10/543

摘要： A process for preparing a solar cell comprising a support, a layer of cadmium sulfide (CdS), a layer of cadmium telluride (CdTe), a layer of a transparent conductive oxide (TCO), a conductive metallic layer and optionally a layer of buffer material, the CdS layer and the CdTe layer being deposited by means of a pulsed plasma deposition (PPD) method, a solar cell obtainable by means of the described process being also provided.

摘要翻译： 一种制备太阳能电池的方法，包括载体，硫化镉层（CdS），碲化镉层（CdTe），透明导电氧化物层（TCO），导电金属层和任选的缓冲层 材料，通过脉冲等离子体沉积（PPD）方法沉积的CdS层和CdTe层，还提供了可通过所述方法获得的太阳能电池。

公开(公告)号：US20120286219A1

公开(公告)日：2012-11-15

申请号：US13519208

申请日：2010-12-03

申请人： Masakatsu Ikisawa ,  Hideo Takami ,  Tomoya Tamura

发明人： Masakatsu Ikisawa ,  Hideo Takami ,  Tomoya Tamura

IPC分类号： C23C14/34 ,  H01B1/22

CPC分类号： C23C14/0623 ,  C23C14/0629 ,  C23C14/3414 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： The present invention provides a sputtering target which comprises an alkali metal, a Ib group element, a IIIb group element, and a VIb group element, and has a chalcopyrite crystal structure. Provided is a sputtering target comprising Ib-IIIb-VIb group elements and having a chalcopyrite crystal structure, which is suitable for producing, via a single sputtering process, a light-absorbing layer comprising the Ib-IIIb-VIb group elements and having the chalcopyrite crystal structure.

摘要翻译： 本发明提供一种溅射靶，其包含碱金属，Ib族元素，IIIb族元素和VIb族元素，并且具有黄铜矿晶体结构。 提供了包含Ib-IIIb-VIb族元素并且具有黄铜矿晶体结构的溅射靶，其适于通过单次溅射工艺制造包含Ib-IIIb-VIb族元素并具有黄铜矿的光吸收层 晶体结构。

公开(公告)号：US20120100281A1

公开(公告)日：2012-04-26

申请号：US13265840

申请日：2011-02-15

申请人： Marco Amiotti ,  Giorgio Longoni ,  Antonio Bonucci ,  Alessio Corazza

发明人： Marco Amiotti ,  Giorgio Longoni ,  Antonio Bonucci ,  Alessio Corazza

IPC分类号： B05D5/12 ,  H01L21/20 ,  H01L21/00

CPC分类号： C23C14/0629 ,  C23C14/243

摘要： A method for a controlled dispensing of mercury by mercury sources that release mercury at a temperature Te, the sources being kept at a conditioning temperature Tc Te by means of displacement of the mercury sources.

摘要翻译： 用于通过汞源控制分配汞的方法，其以温度Te释放汞，所述源保持在调节温度Tc Te。

公开(公告)号：US20120064658A1

公开(公告)日：2012-03-15

申请号：US12977543

申请日：2010-12-23

申请人： Christopher Rathweg

发明人： Christopher Rathweg

IPC分类号： H01L31/18 ,  C23C16/458 ,  C23C16/455

CPC分类号： C23C14/24 ,  C23C14/0629 ,  C23C14/568 ,  H01L21/67126 ,  H01L21/67173 ,  H01L21/67706 ,  H01L21/6776 ,  H01L31/1828 ,  H01L31/1876 ,  Y02E10/543 ,  Y02P70/521

摘要： An apparatus is provided for vapor deposition of a sublimated source material as a thin film on discrete photovoltaic (PV) module substrates conveyed in a continuous non-stop manner through said apparatus. The apparatus includes a vapor deposition head configured for receipt and sublimation of a source material, and for distributing the sublimated source material onto an upper surface of substrates conveyed through a deposition area. A roll seal configuration is provided at each of an entry slot and an exit slot for the substrates conveyed through the apparatus. The roll seal configuration further includes a cylinder rotatably supported at a defined gap height above a conveyance plane of the substrates such that the cylinder is not in continuous rolling contact with the substrates within the window of finished active semiconductor material. The cylinder is floatable in a vertical direction relative to the conveyance plane of the substrates such that the cylinder rolls up and over surface variations in the substrates that exceed the gap height as the substrates are conveyed under the cylinder.

摘要翻译： 提供了一种装置，用于将升华的源材料作为薄膜蒸发沉积在以连续不间断方式通过所述装置输送的离散光伏（PV）模块基板上。 该装置包括构造成用于接收和升华源材料并用于将升华的源材料分配到通过沉积区域输送的衬底的上表面上的蒸镀头。 在用于通过设备输送的基板的入口槽和出口槽中的每一个处设置有辊密封构造。 辊密封结构还包括可旋转地支撑在衬底的输送平面上方的限定的间隙高度的圆筒，使得圆筒不与最终活性半导体材料的窗内的基底连续滚动接触。 圆柱体可相对于基板的输送平面在垂直方向上浮动，使得当基板在圆筒下传送时，圆筒滚动超过间隙高度的基板的上表面变化。

公开(公告)号：US20110277840A1

公开(公告)日：2011-11-17

申请号：US13096316

申请日：2011-04-28

申请人： Todd R. Bryden ,  Jeffrey L. Fenton, JR. ,  Gary E. Mitchell ,  Kirk R. Thompson ,  Michael E. Mills ,  David J. Parrillo

发明人： Todd R. Bryden ,  Jeffrey L. Fenton, JR. ,  Gary E. Mitchell ,  Kirk R. Thompson ,  Michael E. Mills ,  David J. Parrillo

IPC分类号： H01L31/0264 ,  H01L31/18 ,  B82Y40/00

CPC分类号： H01L31/18 ,  C23C14/0629 ,  C23C14/3414 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/02557 ,  H01L21/02631 ,  H01L31/022466 ,  H01L31/0322 ,  H01L31/03928 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

摘要： The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.

摘要翻译： 本发明是一种在制造光伏电池的同时在铜硫属元素化物系吸收体上形成硫化镉基缓冲剂的方法。 缓冲液在相对高的压力下溅射。 所得到的电池具有良好的效率，并且根据一个实施例的特征在于吸收体和缓冲层之间的窄界面。 根据第二实施方案，缓冲剂通过相对高的氧含量被进一步表征。

公开(公告)号：US20110263073A1

公开(公告)日：2011-10-27

申请号：US12994849

申请日：2009-05-25

申请人： Kenneth Durose ,  Jon Major

发明人： Kenneth Durose ,  Jon Major

IPC分类号： H01L31/18 ,  C23C16/455 ,  C23C16/44

CPC分类号： C23C14/0629 ,  C23C14/22

摘要： A method of depositing a film of a first material, such as Cadmium Telluride on to a second material, such as Cadmium Sulphide by a physical vapour deposition process wherein said deposition is performed in an atmosphere having a relatively high ambient pressure, in one embodiment between 50 and 200 Torr.

摘要翻译： 通过物理气相沉积工艺将诸如碲化镉的第一材料的膜沉积到第二材料例如硫化镉的方法，其中所述沉积在具有较高环境压力的气氛中进行，在一个实施方案中在 50和200乇。

公开(公告)号：US20110232762A1

公开(公告)日：2011-09-29

申请号：US13053957

申请日：2011-03-22

申请人： Naoki MURAKAMI

发明人： Naoki MURAKAMI

IPC分类号： H01L31/0264 ,  H01L31/0272

CPC分类号： H01L31/0322 ,  C23C14/0629 ,  C23C14/24 ,  C23C14/548 ,  Y02E10/541 ,  Y02P70/521

摘要： A method for manufacturing a photoelectric conversion element including a step of preparing a substrate and a step of forming a photoelectric conversion layer made of a CIGS-based semiconductor compound on the substrate. The step of forming the photoelectric conversion layer includes exposing the substrate to vapors of (In, Ga) and Se, or a vapor of (In, Ga)ySez, and is achieved in less than 40 minutes, and the step of exposing the substrate to vapors of (In, Ga) and Se, or vapor of (In, Ga)ySez includes varying the Ga/(In+Ga) ratio over time.

摘要翻译： 一种制造光电转换元件的方法，包括准备衬底的步骤以及在衬底上形成由CIGS基半导体化合物制成的光电转换层的步骤。 形成光电转换层的步骤包括将衬底暴露于（In，Ga）和Se的蒸气或（In，Ga）ySez的蒸气中，并在少于40分钟内实现，并且将衬底 （In，Ga）和Se的蒸气或（In，Ga）ySez的蒸气包括随时间改变Ga /（In + Ga）比率。

公开(公告)号：US20100285206A1

公开(公告)日：2010-11-11

申请号：US12749048

申请日：2010-03-29

申请人： Egbert Woelk ,  Ronald L. DiCarlo, JR.

发明人： Egbert Woelk ,  Ronald L. DiCarlo, JR.

IPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/448

CPC分类号： C23C16/455 ,  C23C14/0617 ,  C23C14/0629 ,  C23C14/243 ,  C23C14/54 ,  C23C16/301 ,  C23C16/306 ,  C23C16/4482 ,  C30B23/00 ,  C30B25/14

摘要： Disclosed is a method of providing a constant concentration of a metal-containing precursor compound in the vapor phase in a carrier gas. Such method is particularly useful in supplying a constant concentration of a gaseous metal-containing compound to a plurality of vapor deposition reactors.

摘要翻译： 公开了一种在载气中在气相中提供恒定浓度的含金属的前体化合物的方法。 这种方法特别可用于将恒定浓度的含气态金属的化合物供应给多个气相沉积反应器。

公开(公告)号：US20100221901A1

公开(公告)日：2010-09-02

申请号：US12712881

申请日：2010-02-25

申请人： Zhiju Cai ,  Wenyu Cao ,  Yong Zhou

发明人： Zhiju Cai ,  Wenyu Cao ,  Yong Zhou

IPC分类号： H01L21/20

CPC分类号： H01L21/02631 ,  C23C14/0629 ,  C23C14/24 ,  C23C14/5806 ,  H01L21/02557 ,  H01L31/1828 ,  Y02E10/543

摘要： A method for preparing a cadmium sulfide film comprises: providing a slurry; coating a first substrate with the slurry; heating the first substrate to produce a vapor; and depositing the vapor on a second substrate to form a cadmium sulfide film. The slurry comprises a dispersant, cadmium particles and sulfur particles.

摘要翻译： 制备硫化镉膜的方法包括：提供浆料; 用浆料涂覆第一基材; 加热第一衬底以产生蒸气; 并将蒸气沉积在第二衬底上以形成硫化镉膜。 浆料包括分散剂，镉颗粒和硫颗粒。