公开(公告)号：US20110263073A1

公开(公告)日：2011-10-27

申请号：US12994849

申请日：2009-05-25

Applicant: Kenneth Durose ,  Jon Major

Inventor： Kenneth Durose ,  Jon Major

IPC: H01L31/18 ,  C23C16/455 ,  C23C16/44

CPC classification number: C23C14/0629 ,  C23C14/22

Abstract: A method of depositing a film of a first material, such as Cadmium Telluride on to a second material, such as Cadmium Sulphide by a physical vapour deposition process wherein said deposition is performed in an atmosphere having a relatively high ambient pressure, in one embodiment between 50 and 200 Torr.

Abstract translation: 通过物理气相沉积工艺将诸如碲化镉的第一材料的膜沉积到第二材料例如硫化镉的方法，其中所述沉积在具有较高环境压力的气氛中进行，在一个实施方案中在 50和200乇。

公开(公告)号：US4933299A

公开(公告)日：1990-06-12

申请号：US322124

申请日：1989-03-13

Applicant: Kenneth Durose

Inventor： Kenneth Durose

IPC: H01L21/302 ,  H01L21/20 ,  H01L21/205 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L21/316

CPC classification number: H01L21/30621 ,  H01L21/3086 ,  H01L21/31105 ,  H01L21/31654 ,  Y10S148/006 ,  Y10S148/051 ,  Y10S148/071 ,  Y10S148/094 ,  Y10S148/11 ,  Y10S438/913

Abstract: MOVPE growth and photoetching are integrated into a unified sequence which is carried out without removing a workpiece from a MOVPE reactor. Growth may be carried out before, after or before and after the etching.To prevent pattern broadening by diffussion of the active species the substrate is preferably protected by a fugitive coating which is removed by the illumination. Native oxide coatings are particularly suitable for InGaAsP substrates. These are conveniently applied for exposing to substrate to 20.degree./o O.sub.2 +80.degree./oN.sub.2 for about 3 minutes at 450.degree. C.