Invention Grant
US4933299A Method of forming 3-D structures using MOVCD with in-situ photoetching
失效
使用具有原位光刻技术的MOVCD形成三维结构的方法
- Patent Title: Method of forming 3-D structures using MOVCD with in-situ photoetching
- Patent Title (中): 使用具有原位光刻技术的MOVCD形成三维结构的方法
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Application No.: US322124Application Date: 1989-03-13
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Publication No.: US4933299APublication Date: 1990-06-12
- Inventor: Kenneth Durose
- Applicant: Kenneth Durose
- Applicant Address: GB3
- Assignee: British Telecommunications public limited company
- Current Assignee: British Telecommunications public limited company
- Current Assignee Address: GB3
- Priority: GBX8806800 19880322
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/20 ; H01L21/205 ; H01L21/306 ; H01L21/308 ; H01L21/311 ; H01L21/316
Abstract:
MOVPE growth and photoetching are integrated into a unified sequence which is carried out without removing a workpiece from a MOVPE reactor. Growth may be carried out before, after or before and after the etching.To prevent pattern broadening by diffussion of the active species the substrate is preferably protected by a fugitive coating which is removed by the illumination. Native oxide coatings are particularly suitable for InGaAsP substrates. These are conveniently applied for exposing to substrate to 20.degree./o O.sub.2 +80.degree./oN.sub.2 for about 3 minutes at 450.degree. C.
Public/Granted literature
- US5594789A Transaction implementation in video dial tone network Public/Granted day:1997-01-14
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