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    Amorphous film of composite oxide, crystalline film of composite oxide, method of producing said films and sintered compact of composite oxide
    3.
    发明授权
    Amorphous film of composite oxide, crystalline film of composite oxide, method of producing said films and sintered compact of composite oxide 有权
    复合氧化物的无定形膜，复合氧化物的结晶膜，所述膜的制造方法和复合氧化物的烧结体

    公开(公告)号：US08252206B2

    公开(公告)日：2012-08-28

    申请号：US12666306

    申请日：2008-06-13

    申请人： Masakatsu Ikisawa ,  Masataka Yahagi ,  Kozo Osada ,  Takashi Kakeno

    发明人： Masakatsu Ikisawa ,  Masataka Yahagi ,  Kozo Osada ,  Takashi Kakeno

    IPC分类号： H01B1/08

    CPC分类号： C23C14/086 ,  C04B35/457 ,  C04B35/6262 ,  C04B35/62695 ,  C04B35/63416 ,  C04B2235/3206 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/77 ,  C23C14/3414 ,  C23C14/5806

    摘要： Provided is an amorphous film comprised substantially of indium, tin, magnesium and oxygen, and containing tin at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Mg) and magnesium at a ratio of 0.1 to 2.0% based on an atomicity ratio of Mg/(In+Sn+Mg) with remnant being indium and oxygen, and having a film resistivity of 0.4 mΩcm or less as a result of crystallizing the film by annealing the film at a temperature of 260° C. or lower. An amorphous ITO thin film for use as a display electrode and the like in flat panel displays is obtained by way of sputter deposition without heating the substrate and without the need of adding water during the deposition. This amorphous ITO film has the property of being crystallized by annealing at 260° C. or lower, which is not such a high temperature, and having low resistivity after crystallization. Also provided are a method of producing the film and a sintered compact for producing the film.

    摘要翻译： 本发明提供一种非晶膜，其基本上由铟，锡，镁和氧组成，并且以Sn /（In + Sn + Mg）和镁的原子比为5〜15％，比例为0.1〜 基于与残留物为铟和氧的Mg /（In + Sn + Mg）的原子数比为2.0％，并且由于通过在温度下退火该膜而使膜结晶而导致膜电阻率为0.4mΩ/ 为260℃以下。 在平板显示器中用作显示电极等的非晶ITO薄膜通过溅射沉积而不加热基板而不需要在沉积期间加入水来获得。 该非晶ITO膜具有通过在260℃以下的退火而结晶化的特性，该温度不是这样高的温度，结晶后的电阻率低。 还提供了制造该膜的方法和用于制造该膜的烧结体。

    OXIDE SINTERED COMPACT FOR PRODUCING TRANSPARENT CONDUCTIVE FILM
    9.
    发明申请
    OXIDE SINTERED COMPACT FOR PRODUCING TRANSPARENT CONDUCTIVE FILM 有权
    用于生产透明导电膜的氧化物烧结紧密

    公开(公告)号：US20110163279A1

    公开(公告)日：2011-07-07

    申请号：US13063141

    申请日：2009-09-18

    申请人： Masakatsu Ikisawa ,  Masataka Yahagi

    发明人： Masakatsu Ikisawa ,  Masataka Yahagi

    IPC分类号： H01B1/02 ,  C23C14/35 ,  C23C14/08

    CPC分类号： C23C14/3414 ,  C04B35/01 ,  C04B35/457 ,  C04B35/6263 ,  C04B35/62635 ,  C04B35/62695 ,  C04B2235/3217 ,  C04B2235/3262 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/6562 ,  C23C14/086

    摘要： The present invention provides a sputtering target suitable for producing an amorphous transparent conductive film which can be formed without heating a substrate and without feeding water during the sputtering; which is easily crystallized by low-temperature annealing; and which has low resistivity after the crystallization. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, and one or more elements selected from germanium, nickel, manganese, and aluminum as a second additive element, with the content of tin which is the first additive element being 2-15 atom % relative to the total content of indium and tin, and the total content of the second additive element being 0.1-2 atom % relative to the total content of indium, tin and the second additive element.

    摘要翻译： 本发明提供一种溅射靶，适用于制造无需加热基板而不在溅射期间供水的非晶透明导电膜; 其通过低温退火容易结晶; 并且在结晶后具有低电阻率。 含有氧化铟作为主要成分的氧化物烧结体，同时含有锡作为第一添加元素，以及一种或多种选自锗，镍，锰和铝的元素作为第二添加元素，锡的含量为 第一添加元素相对于铟和锡的总含量为2-15原子％，第二添加元素的总含量相对于铟，锡和第二添加元素的总含量为0.1-2原子％。

    Zinc Oxide Based Transparent Electric Conductor, Sputtering Target for Forming of the Conductor and Process for Producing the Target
    10.
    发明申请
    Zinc Oxide Based Transparent Electric Conductor, Sputtering Target for Forming of the Conductor and Process for Producing the Target 有权
    基于氧化锌的透明电导体，用于形成导体的溅射靶和用于生产靶的方法

    公开(公告)号：US20090200525A1

    公开(公告)日：2009-08-13

    申请号：US12307380

    申请日：2007-05-23

    申请人： Masakatsu Ikisawa ,  Masataka Yahagi

    发明人： Masakatsu Ikisawa ,  Masataka Yahagi

    IPC分类号： H01B1/08 ,  C23C14/34 ,  B29C67/04

    CPC分类号： C23C14/086 ,  C04B35/453 ,  C04B35/645 ,  C04B2235/3217 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3291 ,  C04B2235/6562 ,  C04B2235/658 ,  C23C14/3414 ,  H01B1/08

    摘要： Provided is a zinc oxide transparent electric conductor having zinc oxide (ZnO) as its principal component, containing an element to become an n-type dopant to zinc oxide, containing metal M in which P(P=(G+H mix)/RT, wherein G is the Gibbs free energy at temperature T of the metal, H mix is the mixing enthalpy at temperature T of zinc oxide and the metal, R is the gas constant, and T is the temperature) as a parameter showing the wettability with zinc oxide is 6 or less and in which its resistivity is smaller than the resistivity of zinc oxide added with the n-type dopant, and wherein concentration of metal M in relation to the total atomicity of zinc and the n-type dopant and metal M, which are all metal atoms configuring the zinc oxide transparent electric conductor, is 0.05 to 2.0 at %. In the development of a transparent electric conductor that does not contain raw material In which is expensive and with concern of resource depletion, provided is a low resistivity transparent electric conductor by exceeding the limits of the conventional development technique of the single dopant method, presenting guidelines for selecting a secondary additive material effective in achieving low resistivity, and indicating types of specific materials and the appropriate concentration range.

    摘要翻译： 提供了以氧化锌（ZnO）为主要成分的氧化锌透明导电体，含有成为与氧化锌成为n型掺杂剂的元素，含有金属M，其中P（P =（G + H mix）/ RT ，其中G是金属温度T下的吉布斯自由能，H混合物是氧化锌和金属的温度T的混合焓，R是气体常数，T是温度）作为参数，表示润湿性 氧化锌为6以下，其电阻率小于添加有n型掺杂剂的氧化锌的电阻率，金属M的相对于锌的总原子数和n型掺杂剂和金属M的浓度 构成氧化锌透明导电体的全部金属原子为0.05〜2.0原子％。 在不含原材料的透明电导体的开发中，其中昂贵并且关心资源耗尽，提供了超过单一掺杂剂方法的常规开发技术的限制的低电阻率透明导电体，提供指导 用于选择有效实现低电阻率的次要添加剂材料，并指示特定材料的类型和适当的浓度范围。